Download or read book Silicon Carbide and Related Materials 2013 written by Hajime Okumura and published by . This book was released on 2014 with total page 1246 pages. Available in PDF, EPUB and Kindle. Book excerpt: The papers cover most of the current research efforts on the wide bandgap semiconductor silicon carbide (SiC) and related materials, and a wide range of topics from crystal growth to their power electronics applications. In these proceedings, the written version of 270 contributed papers and 13 invited papers are included. The major chapters of the proceedings collect papers in the area of bulk growth of SiC, epitaxial growth of SiC, physical properties and characterization, processing, devices and application. There are three shorter chapters on graphene, III-nitrides and related materials. The 283 papers are grouped as follows: Chapter 1: SiC Bulk Growth; Chapter 2: SiC Epitaxial Growth; Chapter 3: Physical Properties and Characterization of SiC; Chapter 4: Processing of SiC; Chapter 5: Devices and Circuits; Chapter 6: Related Materials. Keyword: bulk growth of SiC, epitaxial growth of SiC, physical properties and characterization, processing, devices and application, graphene, III-nitrides and related materials The 270 contributed and 13 invited papers report recent research on the wide bandgap semiconductor silicon carbide (SiC) in terms of bulk growth, epitaxial growth, physical properties and characterization, processing, devices and circuits, and related materials. Among individual topics are the crystal growth of highly oriented SiC by chemical vapor deposition with alternating gas supply, correlation between microwave reflectivity and excess carrier concentrations in 4H-SiC, the microstructural analysis of a damaged layer introduced during chemo-mechanical polishing, experimental studies of water vapor plasma oxidation and thermal oxidation of 4H-SiC (0001) for clarifying the atomic-flattening mechanisms in plasma-assisted polishing, a low-cost implantation process with high heat resistant photoresist in fabricating silicon carbide devices, the cryogenic testing and characterization of SiC diodes, modeling high-performance 4H-SiC emitter coupled logic circuits, and high-efficiency power conversion using silicon carbide power electronics. The two volumes are paged and indexed together. -- Materials science-- Materials science -- Carbon-- Materials science -- Ceramics-- Materials science -- Composite materials-- Solid state materials and hard matter.

Download or read book Silicon Carbide and Related Materials 2013 written by Hajime Okumura and published by Trans Tech Publications Ltd. This book was released on 2014-02-26 with total page 1246 pages. Available in PDF, EPUB and Kindle. Book excerpt: The papers cover most of the current research efforts on the wide bandgap semiconductor silicon carbide (SiC) and related materials, and a wide range of topics from crystal growth to their power electronics applications. In these proceedings, the written version of 270 contributed papers and 13 invited papers are included. The major chapters of the proceedings collect papers in the area of bulk growth of SiC, epitaxial growth of SiC, physical properties and characterization, processing, devices and application. There are three shorter chapters on graphene, III-nitrides and related materials. Volume is indexed by Thomson Reuters CPCI-S (WoS). The 283 papers are grouped as follows: Chapter 1: SiC Bulk Growth; Chapter 2: SiC Epitaxial Growth; Chapter 3: Physical Properties and Characterization of SiC; Chapter 4: Processing of SiC; Chapter 5: Devices and Circuits; Chapter 6: Related Materials.

Download or read book The International Conference on Silicon Carbide and Related Materials written by 応用物理学会 and published by . This book was released on 2013 with total page 380 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Silicon Carbide and Related Materials 2019 written by Hiroshi Yano and published by Trans Tech Publications Ltd. This book was released on 2020-07-28 with total page 1196 pages. Available in PDF, EPUB and Kindle. Book excerpt: Selected peer-reviewed papers from International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM 2019) Selected, peer-reviewed papers from the 18th International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM 2019), September 29 - October 4, 2019, Kyoto, Japan

Download or read book Handbook of Silicon Carbide Materials and Devices written by Zhe Chuan Feng and published by CRC Press. This book was released on 2023-07-10 with total page 465 pages. Available in PDF, EPUB and Kindle. Book excerpt: This handbook presents the key properties of silicon carbide (SiC), the power semiconductor for the 21st century. It describes related technologies, reports the rapid developments and achievements in recent years, and discusses the remaining challenging issues in the field. The book consists of 15 chapters, beginning with a chapter by Professor W. J. Choyke, the leading authority in the field, and is divided into four sections. The topics include presolar SiC history, vapor-liquid-solid growth, spectroscopic investigations of 3C-SiC/Si, developments and challenges in the 21st century; CVD principles and techniques, homoepitaxy of 4H-SiC, cubic SiC grown on 4H-SiC, SiC thermal oxidation processes and MOS interface, Raman scattering, NIR luminescent studies, Mueller matrix ellipsometry, Raman microscopy and imaging, 4H-SiC UV photodiodes, radiation detectors, and short wavelength and synchrotron X-ray diffraction. This comprehensive work provides a strong contribution to the engineering, materials, and basic science knowledge of the 21st century, and will be of interest to material growers, designers, engineers, scientists, postgraduate students, and entrepreneurs.

Download or read book Silicon Carbide and Related Materials 2018 written by Peter M. Gammon and published by Trans Tech Publications Ltd. This book was released on 2019-07-19 with total page 916 pages. Available in PDF, EPUB and Kindle. Book excerpt: 12th European Conference on Silicon Carbide and Related Materials (ECSCRM 2018) Selected, peer reviewed papers from the European Conference on Silicon Carbide and Related Materials (ECSCRM 2018), September 2-6, 2018,Birmingham, UK

Download or read book Silicon Carbide and Related Materials 2003 written by Roland Madar and published by Trans Tech Publications Ltd. This book was released on 2004-06-15 with total page 1548 pages. Available in PDF, EPUB and Kindle. Book excerpt: Because of their many superior properties, including a wide band-gap and high breakdown field, which are different to those of conventional semiconductors such as Si and GaAs, compounds such as SiC, III-Nitrides and related materials are currently attracting increasing attention and are being targeted as possible solutions in a variety of problematic fields of electronic application: including high temperature, high power, radiation-resistant and microwave use. Volume is indexed by Thomson Reuters CPCI-S (WoS).

Download or read book Silicon Carbide and Related Materials 2015 written by Fabrizio Roccaforte and published by Trans Tech Publications Ltd. This book was released on 2016-05-24 with total page 1264 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume collects the papers from the 16th International Conference on Silicon Carbide and Related Materials (ICSCRM 2015), held in Giardini Naxos, Italy, in October 2015. During the conference, the researchers discussed issues in the field of wide bandgap semiconductors, focusing on silicon carbide, but also III-nitrides, and related materials like graphene. The major sections of the book collect papers in the area of material growth, characterization, processing, devices and related materials and technologies. The papers are grouped as follows: Chapter 1: SiC Growth Chapter 2: SiC Theory and Characterization Chapter 3: SiC Processing Chapter 4: SiC Devices

Download or read book Silicon Carbide and Related Materials 2014 written by Didier Chaussende and published by Trans Tech Publications Ltd. This book was released on 2015-06-30 with total page 1078 pages. Available in PDF, EPUB and Kindle. Book excerpt: Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France

Download or read book Silicon Carbide and Related Materials 2005 written by Robert P. Devaty and published by Trans Tech Publications Ltd. This book was released on 2006-10-15 with total page 1670 pages. Available in PDF, EPUB and Kindle. Book excerpt: Volume is indexed by Thomson Reuters CPCI-S (WoS). Silicon Carbide (SiC), Gallium Nitride (GaN) and Diamond are examples of wide-bandgap semiconductors having chemical, electrical and optical properties which make them very attractive for the fabrication of high-power and high-frequency electronic devices, as well as light-emitters and sensors which have to operate under harsh conditions.

Download or read book Silicon Carbide and Related Materials Proceedings of the Fifth Conference 1 3 November 1993 Washington DC USA written by Michael G. Spencer and published by CRC Press. This book was released on 1994-06-29 with total page 768 pages. Available in PDF, EPUB and Kindle. Book excerpt: USA companies working in this area include Westinghouse. This material is being investigated primarily in the USA, Japan and Russia alongside that into wide-gap compounds which feature similar characteristics. Applications include high temperature ultra-violet lasers, photodiodes, photodetectors, blue LEDs, high power microwave applications in radar and transmitter devices Special sale to delegates 200 @ 35 Previous volumes in series published by Springer Leading workers in field include Pavlidis (MIT) and Choyke (Pittsburgh, Dept Phys) Feng author is also presenting paper Research in this area is expanding

Download or read book Silicon Carbide and Related Materials 2011 written by Robert P. Devaty and published by Trans Tech Publications Ltd. This book was released on 2012-05-14 with total page 1500 pages. Available in PDF, EPUB and Kindle. Book excerpt: ICSCRM 2011 Selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA

Download or read book Fundamentals of Silicon Carbide Technology written by Tsunenobu Kimoto and published by John Wiley & Sons. This book was released on 2014-09-23 with total page 565 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001. The SiC SBD market has grown significantly since that time, and SBDs are now used in a variety of power systems, particularly switch-mode power supplies and motor controls. SiC power MOSFETs entered commercial production in 2011, providing rugged, high-efficiency switches for high-frequency power systems. In this wide-ranging book, the authors draw on their considerable experience to present both an introduction to SiC materials, devices, and applications and an in-depth reference for scientists and engineers working in this fast-moving field. Fundamentals of Silicon Carbide Technology covers basic properties of SiC materials, processing technology, theory and analysis of practical devices, and an overview of the most important systems applications. Specifically included are: A complete discussion of SiC material properties, bulk crystal growth, epitaxial growth, device fabrication technology, and characterization techniques. Device physics and operating equations for Schottky diodes, pin diodes, JBS/MPS diodes, JFETs, MOSFETs, BJTs, IGBTs, and thyristors. A survey of power electronics applications, including switch-mode power supplies, motor drives, power converters for electric vehicles, and converters for renewable energy sources. Coverage of special applications, including microwave devices, high-temperature electronics, and rugged sensors. Fully illustrated throughout, the text is written by recognized experts with over 45 years of combined experience in SiC research and development. This book is intended for graduate students and researchers in crystal growth, material science, and semiconductor device technology. The book is also useful for design engineers, application engineers, and product managers in areas such as power supplies, converter and inverter design, electric vehicle technology, high-temperature electronics, sensors, and smart grid technology.

Download or read book Silicon Carbide and Related Materials 2009 written by Anton J. Bauer and published by Trans Tech Publications Ltd. This book was released on 2010-04-29 with total page 1340 pages. Available in PDF, EPUB and Kindle. Book excerpt: ICSCRM 2009 Selected, peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nürnberg, Germany, October 11 – 16, 2009

Download or read book Silicon Carbide and Related Materials 2006 written by Nicholas G. Wright and published by Trans Tech Publications Ltd. This book was released on 2007-09-15 with total page 1100 pages. Available in PDF, EPUB and Kindle. Book excerpt: Volume is indexed by Thomson Reuters CPCI-S (WoS). Silicon Carbide (SiC), Gallium Nitride (GaN) and Diamond are wide-bandgap semiconductors which also possess extraordinary chemical, electrical and optical properties that make them uniquely attractive for the fabrication of high-power and high-frequency electronic devices, as well as of light-emitters and sensors which have to survive harsh operating conditions.

Download or read book Silicon Carbide and Related Materials written by and published by . This book was released on 2006 with total page 852 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Silicon Carbide and Related Materials 2004 written by Roberta Nipoti and published by Trans Tech Publications Ltd. This book was released on 2005-05-15 with total page 1148 pages. Available in PDF, EPUB and Kindle. Book excerpt: Volume is indexed by Thomson Reuters CPCI-S (WoS). Silicon Carbide (SiC), Gallium Nitride (GaN) and Diamond are examples of wide-bandgap semiconductors having chemical, electrical and optical properties which make them very attractive for the fabrication of high-power and high-frequency electronic devices, as well as of light-emitters and sensors which have to operate under harsh conditions.