Download or read book Silicon Carbide and Related Materials 2008 written by Amador Pérez-Tomás and published by Trans Tech Publications Ltd. This book was released on 2009-03-02 with total page 1030 pages. Available in PDF, EPUB and Kindle. Book excerpt: Volume is indexed by Thomson Reuters CPCI-S (WoS). Wide-bandgap semiconductors, such as silicon carbide and group-III nitrides, are attracting increased attention as promising materials for high-power, high-frequency and high-temperature electronics use, as well as for short-wavelength light-emitters.
Download or read book Silicon Carbide and Related Materials 2008 written by Amador Pérez-Tomás and published by . This book was released on 2009 with total page 1021 pages. Available in PDF, EPUB and Kindle. Book excerpt: Wide-bandgap semiconductors, such as silicon carbide and group-III nitrides, are attracting increased attention as promising materials for high-power, high-frequency and high-temperature electronics use, as well as for short-wavelength light-emitters. The volume is arranged into seven chapters which cover the topics of SiC and related materials, bulk and epi-growth, characterization of SiC and related materials, devices and applications. Novel subject areas that enjoy a strong increase in contributions include cutting-edge SiC nanostructures, and graphene. From the scientific point of view, it is seen that bipolar degradation can be significantly reduced by appropriate materials preparation. Cubic Silicon Carbide is once again attracting attention from both researchers and industry. It has also been shown that the reliability of MOS structures on SiC is improving. Moreover, there has been a step-change increase in the application of SiC technologies to renewable energy systems and space domains. A close examination of this volume will equip the reader with a clear state-of-the-art overview of the field. This comprehensive work offers a superlative overview for those already working in these fields, as well as offering a sound introduction to newcomers.
Download or read book Silicon Carbide and Related Materials written by Amador Perez and published by Trans Tech Publications. This book was released on 2009-07-08 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Volume is indexed by Thomson Reuters CPCI-S (WoS).Wide-bandgap semiconductors, such as silicon carbide and group-III nitrides, are attracting increased attention as promising materials for high-power, high-frequency and high-temperature electronics use, as well as for short-wavelength light-emitters. The volume is arranged into seven chapters which cover the topics of SiC and related materials, bulk and epi-growth, characterization of SiC and related materials, devices and applications. Novel subject areas that enjoy a strong increase in contributions include cutting-edge SiC nanostructures, and graphene. From the scientific point of view, it is seen that bipolar degradation can be significantly reduced by appropriate materials preparation. Cubic Silicon Carbide is once again attracting attention from both researchers and industry. It has also been shown that the reliability of MOS structures on SiC is improving. Moreover, there has been a step-change increase in the application of SiC technologies to renewable energy systems and space domains. A close examination of this volume will equip the reader with a clear state-of-the-art overview of the field.This comprehensive work offers a superlative overview for those already working in these fields, as well as offering a sound introduction to newcomers. Wide-bandgap semiconductors are promising materials for high-power, high-frequency, and high-temperature electronics use, as well as for short-wavelength light-emitters. Papers from a September 2008 offer an overview of the field. Papers are arranged into seven chapters on SiC and related materials, bulk and epi-growth, characterization of SiC and related materials, devices, and applications. This year, there were increased contributions in areas including cutting-edge SiC nanostructures, graphene, and cubic silicon carbide. Applications of SiC technologies to renewable energy systems and space domains are highlighted. Other areas examined are the growth of 4H-SiC single crystals on 6H-SiC seeds with an open backside by PVT method, characterization of 6H-SiC single crystals using different source materials, observation of polytype switches during SiC PVT bulk growth by high energy X-ray diffraction, and nucleation and growth of 3C-SiC single crystals from the vapor phase. B&w images are included.
Download or read book Proceedings of Diamond 2008 the 19th European Conference on Diamond Diamond Like Materials Carbon Nanotubes Nitrides and Silicon Carbide written by European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes, Nitrides and Silicon Carbide. 19, 2008, Sitges and published by . This book was released on 2009 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Handbook of Silicon Carbide Materials and Devices written by Zhe Chuan Feng and published by CRC Press. This book was released on 2023-07-10 with total page 465 pages. Available in PDF, EPUB and Kindle. Book excerpt: This handbook presents the key properties of silicon carbide (SiC), the power semiconductor for the 21st century. It describes related technologies, reports the rapid developments and achievements in recent years, and discusses the remaining challenging issues in the field. The book consists of 15 chapters, beginning with a chapter by Professor W. J. Choyke, the leading authority in the field, and is divided into four sections. The topics include presolar SiC history, vapor-liquid-solid growth, spectroscopic investigations of 3C-SiC/Si, developments and challenges in the 21st century; CVD principles and techniques, homoepitaxy of 4H-SiC, cubic SiC grown on 4H-SiC, SiC thermal oxidation processes and MOS interface, Raman scattering, NIR luminescent studies, Mueller matrix ellipsometry, Raman microscopy and imaging, 4H-SiC UV photodiodes, radiation detectors, and short wavelength and synchrotron X-ray diffraction. This comprehensive work provides a strong contribution to the engineering, materials, and basic science knowledge of the 21st century, and will be of interest to material growers, designers, engineers, scientists, postgraduate students, and entrepreneurs.
Download or read book Silicon Carbide 2008 materials Processing and Devices written by Michael Dudley and published by . This book was released on 2008 with total page 312 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Silicon Carbide and Related Materials 2009 written by Anton J. Bauer and published by Trans Tech Publications Ltd. This book was released on 2010-04-29 with total page 1340 pages. Available in PDF, EPUB and Kindle. Book excerpt: ICSCRM 2009 Selected, peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nürnberg, Germany, October 11 – 16, 2009
Download or read book Silicon Carbide Volume 2 written by Peter Friedrichs and published by John Wiley & Sons. This book was released on 2011-04-08 with total page 520 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon Carbide - this easy to manufacture compound of silicon and carbon is said to be THE emerging material for applications in electronics. High thermal conductivity, high electric field breakdown strength and high maximum current density make it most promising for high-powered semiconductor devices. Apart from applications in power electronics, sensors, and NEMS, SiC has recently gained new interest as a substrate material for the manufacture of controlled graphene. SiC and graphene research is oriented towards end markets and has high impact on areas of rapidly growing interest like electric vehicles. This volume is devoted to high power devices products and their challenges in industrial application. Readers will benefit from reports on development and reliability aspects of Schottky barrier diodes, advantages of SiC power MOSFETs, or SiC sensors. The authors discuss MEMS and NEMS as SiC-based electronics for automotive industry as well as SiC-based circuit elements for high temperature applications, and the application of transistors in PV-inverters. The list of contributors reads like a "Who's Who" of the SiC community, strongly benefiting from collaborations between research institutions and enterprises active in SiC crystal growth and device development. Among the former are CREE Inc. and Fraunhofer ISE, while the industry is represented by Toshiba, Nissan, Infineon, NASA, Naval Research Lab, and Rensselaer Polytechnic Institute, to name but a few.
Download or read book Silicon Carbide 2008 Materials Processing and Devices written by Michael Dudley and published by Cambridge University Press. This book was released on 2014-06-05 with total page 300 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon carbide (SiC) is a robust semiconductor material being actively developed for high-power and high-temperature applications, especially in the field of power electronics and sensors for harsh environments. This book, the fifth in a continuing series, focuses on SiC growth, defects, and devices. New developments in the growth of bulk SiC single-crystal materials, advances in the epitaxial growth of SiC, and progress in the characterization of materials properties and defects in SiC are featured. The volume also highlights the development of devices manufactured on this wide-bandgap semiconductor including: innovative device designs; characterization of device and materials properties; and improvements in wide-bandgap processing technology.
Download or read book Handbook of Crystal Growth written by Tom Kuech and published by Elsevier. This book was released on 2014-11-02 with total page 1384 pages. Available in PDF, EPUB and Kindle. Book excerpt: Volume IIIA Basic Techniques Handbook of Crystal Growth, Second Edition Volume IIIA (Basic Techniques), edited by chemical and biological engineering expert Thomas F. Kuech, presents the underpinning science and technology associated with epitaxial growth as well as highlighting many of the chief and burgeoning areas for epitaxial growth. Volume IIIA focuses on major growth techniques which are used both in the scientific investigation of crystal growth processes and commercial development of advanced epitaxial structures. Techniques based on vacuum deposition, vapor phase epitaxy, and liquid and solid phase epitaxy are presented along with new techniques for the development of three-dimensional nano-and micro-structures. Volume IIIB Materials, Processes, and Technology Handbook of Crystal Growth, Second Edition Volume IIIB (Materials, Processes, and Technology), edited by chemical and biological engineering expert Thomas F. Kuech, describes both specific techniques for epitaxial growth as well as an array of materials-specific growth processes. The volume begins by presenting variations on epitaxial growth process where the kinetic processes are used to develop new types of materials at low temperatures. Optical and physical characterizations of epitaxial films are discussed for both in situ and exit to characterization of epitaxial materials. The remainder of the volume presents both the epitaxial growth processes associated with key technology materials as well as unique structures such as monolayer and two dimensional materials. Volume IIIA Basic Techniques Provides an introduction to the chief epitaxial growth processes and the underpinning scientific concepts used to understand and develop new processes. Presents new techniques and technologies for the development of three-dimensional structures such as quantum dots, nano-wires, rods and patterned growth Introduces and utilizes basic concepts of thermodynamics, transport, and a wide cross-section of kinetic processes which form the atomic level text of growth process Volume IIIB Materials, Processes, and Technology Describes atomic level epitaxial deposition and other low temperature growth techniques Presents both the development of thermal and lattice mismatched streams as the techniques used to characterize the structural properties of these materials Presents in-depth discussion of the epitaxial growth techniques associated with silicone silicone-based materials, compound semiconductors, semiconducting nitrides, and refractory materials
Download or read book Semiconductors Silicon Carbide and Related Materials written by Min Lu and published by Trans Tech Publications Ltd. This book was released on 2019-05-17 with total page 226 pages. Available in PDF, EPUB and Kindle. Book excerpt: Asia-Pacific Conference on Silicon Carbide and Related Materials (APCSCRM 2018) Selected, peer reviewed papers from the Asia-Pacific Conference on Silicon Carbide and Related Materials (APCSCRM 2018), July 9-12, 2018, Beijing, China
Download or read book Silicon Carbide and Related Materials 2014 written by Didier Chaussende and published by Trans Tech Publications Ltd. This book was released on 2015-06-30 with total page 1078 pages. Available in PDF, EPUB and Kindle. Book excerpt: Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France
Download or read book Proceedings of Diamond 2008 the 19th European Conference on Diamond Diamond Like Materials Carbon Nanotubes Nitrides and Silicon Carbide written by Diamond-Like Materials European Conference on Diamond and published by . This book was released on 2009 with total page 9 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Silicon Carbide and Related Materials 2005 written by Robert P. Devaty and published by Trans Tech Publications Ltd. This book was released on 2006-10-15 with total page 1670 pages. Available in PDF, EPUB and Kindle. Book excerpt: Volume is indexed by Thomson Reuters CPCI-S (WoS). Silicon Carbide (SiC), Gallium Nitride (GaN) and Diamond are examples of wide-bandgap semiconductors having chemical, electrical and optical properties which make them very attractive for the fabrication of high-power and high-frequency electronic devices, as well as light-emitters and sensors which have to operate under harsh conditions.
Download or read book Silicon Carbide and Related Materials 2010 written by Edouard V. Monakhov and published by Trans Tech Publications Ltd. This book was released on 2011-03-28 with total page 876 pages. Available in PDF, EPUB and Kindle. Book excerpt: Volume is indexed by Thomson Reuters CPCI-S (WoS). This volume contains the proceedings of the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, on August 29th September 2nd. The editions of ECSCRM have developed over the years and, today, ECSCRM is the leading European conference in the field of SiC and related materials and their applications. This volume is divided into five chapters ranging from SiC growth to Biosystems and thus represents a comprehensive coverage of the field.
Download or read book Silicon Carbide and Related Materials 2003 written by Roland Madar and published by . This book was released on 2002 with total page 908 pages. Available in PDF, EPUB and Kindle. Book excerpt: Because of their many superior properties, including a wide band-gap and high breakdown field, which are different to those of conventional semiconductors such as Si and GaAs, compounds such as SiC, III-Nitrides and related materials are currently attracting increasing attention and are being targeted as possible solutions in a variety of problematic fields of electronic application: including high temperature, high power, radiation-resistant and microwave use. This two-volume edition records the written versions of 364 contributed papers and 26 invited talks, presented at the Tenth International Conference on Silicon Carbide and Related Materials (ICSCRM 2003), held in Lyon, France, from the 5th to the 10th October, 2003. A total of 19 different countries were represented. These proceedings give the latest overview of the fundamental topics which currently drive the development of a competitive SiC technology. They cover bulk and epitaxial growth, the properties of the resultant substrates and layers, and the processing issues involved in developing SiC electronic devices applications.
Download or read book Graphene Nanoelectronics written by Raghu Murali and published by Springer Science & Business Media. This book was released on 2012-03-09 with total page 271 pages. Available in PDF, EPUB and Kindle. Book excerpt: Graphene has emerged as a potential candidate to replace traditional CMOS for a number of electronic applications; this book presents the latest advances in graphene nanoelectronics and the potential benefits of using graphene in a wide variety of electronic applications. The book also provides details on various methods to grow graphene, including epitaxial, CVD, and chemical methods. This book serves as a spring-board for anyone trying to start working on graphene. The book is also suitable to experts who wish to update themselves with the latest findings in the field.
