Download or read book Silicon carbide and related materials 2005 ICSCRM 2005 proceedings of the International Conference on Silicon Carbide and Related Materials 2005 Pittsburgh Pennsylvania USA September 18 23 2005 2 2006 written by International Conference on Silicon Carbide and Related Materials and published by . This book was released on 2006 with total page 831 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Silicon Carbide and Related Materials 2005 written by Robert Philip Devaty and published by . This book was released on 2006 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Silicon Carbide and Related Materials 2005 written by Robert P. Devaty and published by Trans Tech Publications Ltd. This book was released on 2006-10-15 with total page 1670 pages. Available in PDF, EPUB and Kindle. Book excerpt: Volume is indexed by Thomson Reuters CPCI-S (WoS). Silicon Carbide (SiC), Gallium Nitride (GaN) and Diamond are examples of wide-bandgap semiconductors having chemical, electrical and optical properties which make them very attractive for the fabrication of high-power and high-frequency electronic devices, as well as light-emitters and sensors which have to operate under harsh conditions.

Download or read book Silicon Carbide and Related Materials 2005 written by Robert Philip Devaty and published by . This book was released on 2006 with total page 1612 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Silicon Carbide and Related Materials 2004 written by Roberta Nipoti and published by . This book was released on 2005 with total page 1134 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon Carbide (SiC), Gallium Nitride (GaN) and Diamond are examples of wide-bandgap semiconductors having chemical, electrical and optical properties which make them very attractive for the fabrication of high-power and high-frequency electronic devices, as well as of light-emitters and sensors which have to operate under harsh conditions. The book comprises the proceedings of the 5th edition of the European Conference on Silicon Carbide and Related Materials, held from the 31st August to the 4th September 2004 in Bologna, Italy. This conference series here continued its tradition of being the main European forum for exchanging results, and discussing progress, between those university and industry researchers who are most active in the fields of SiC and related materials. Attendees at the conference highlighted the progress made in material growth technology, characterization of material properties and technological processing for electronic applications. Many electronics devices were presented: including high-voltage, high power-density and high-temperature components; as well as microwave components. Radiation-hard sensors were also presented.These proceedings fully document the latest experimental and theoretical understanding of the growth of bulk and epitaxial layers, the properties of the resultant materials, the development of suitable processes and of electronic devices that can best exploit and benefit from the outstanding physical properties that are offered by wide-bandgap materials.

Download or read book Silicon Carbide and Related Materials 1999 written by and published by . This book was released on 2000 with total page 1684 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Silicon Carbide and Related Materials written by and published by . This book was released on 2006 with total page 852 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Silicon carbide and related materials 1999 ICSCRM 99 proceedings of the International Conference on Silicon Carbide and Related Materials 1999 Research Triangle Park North Carolina USA October 10 15 1999 1 2000 written by Calvin H. Carter and published by . This book was released on 2000 with total page 828 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon carbide is the semiconductor of choice for new applications including electric power devices, high frequency devices, high temperature devices, and radiation resistant devices. The III-Nitride compound semiconductors are well suited for optoelectronics and are promising materials for high frequency devices. This two-volume set contains written versions of papers presented at the International Conference on Silicon Carbide and Related Materials - 1999 (ICSCRM'99), held October 10-15, 1999, at Research Triangle Park, North Carolina. The growth of this biennial international conference to over 650 participants from 25 countries attests to the rapidly increasing interest in large bandgap semiconductors in both academia and industry. These volumes contain 401 papers, 19 of which were invited. The principal topics organized as chapters are: 1) SiC bulk growth, 2) SiC epitaxy and thin film growth, 3) physical properties of SiC (structure, surfaces and interfaces, optical and electrical properties, and magnetic resonance), 4) processing of SiC, 5) SiC devices, 6) growth of III-Nitrides and related materials, 6) physical properties of III-Nitrides, and 8) III-Nitrides: processing and devices.

Download or read book Silicon Carbide and Related Materials written by and published by . This book was released on 2000 with total page 868 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Silicon Carbide and Related Materials 2013 written by Hajime Okumura and published by Trans Tech Publications Ltd. This book was released on 2014-02-26 with total page 1246 pages. Available in PDF, EPUB and Kindle. Book excerpt: The papers cover most of the current research efforts on the wide bandgap semiconductor silicon carbide (SiC) and related materials, and a wide range of topics from crystal growth to their power electronics applications. In these proceedings, the written version of 270 contributed papers and 13 invited papers are included. The major chapters of the proceedings collect papers in the area of bulk growth of SiC, epitaxial growth of SiC, physical properties and characterization, processing, devices and application. There are three shorter chapters on graphene, III-nitrides and related materials. Volume is indexed by Thomson Reuters CPCI-S (WoS). The 283 papers are grouped as follows: Chapter 1: SiC Bulk Growth; Chapter 2: SiC Epitaxial Growth; Chapter 3: Physical Properties and Characterization of SiC; Chapter 4: Processing of SiC; Chapter 5: Devices and Circuits; Chapter 6: Related Materials.

Download or read book Silicon Carbide and Related Materials 1999 written by and published by . This book was released on 2000 with total page 908 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Silicon Carbide and Related Materials 1999 written by and published by . This book was released on 2000 with total page 1684 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Silicon Carbide and Related Materials 2003 written by R. Madar and published by . This book was released on 2004 with total page 836 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Silicon Carbide and Related Materials 2017 written by Philip Neudeck and published by . This book was released on 2018 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: This collection of papers by the results of the 2017 International Conference on Silicon Carbide and Related Materials (ICSCRM 2017, September 17-22 in Washington, DC, USA) presents for readers the latest progress in the field of development and production of silicon carbide semiconductors and their application in the power electronic devices. Silicon Carbide, Semiconductors, Bulk and Epitaxial Growth, Surface Defects, Properties, Processing, MOS and MOSFET Structures, Power Devices, Circuits, Applications Materials Science.

Download or read book Silicon Carbide and Related Materials 2011 written by Robert P. Devaty and published by Trans Tech Publications Limited. This book was released on 2012-05-14 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: ICSCRM 2011 Selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA

Download or read book Silicon Carbide and Related Materials 2003 written by Roland Madar and published by Trans Tech Publications Ltd. This book was released on 2004-06-15 with total page 1548 pages. Available in PDF, EPUB and Kindle. Book excerpt: Because of their many superior properties, including a wide band-gap and high breakdown field, which are different to those of conventional semiconductors such as Si and GaAs, compounds such as SiC, III-Nitrides and related materials are currently attracting increasing attention and are being targeted as possible solutions in a variety of problematic fields of electronic application: including high temperature, high power, radiation-resistant and microwave use. Volume is indexed by Thomson Reuters CPCI-S (WoS).

Download or read book Silicon Carbide and Related Materials 2019 written by Hiroshi Yano and published by Trans Tech Publications Ltd. This book was released on 2020-07-28 with total page 1196 pages. Available in PDF, EPUB and Kindle. Book excerpt: Selected peer-reviewed papers from International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM 2019) Selected, peer-reviewed papers from the 18th International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM 2019), September 29 - October 4, 2019, Kyoto, Japan