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Book Silicon Germanium SiGe Nanostructures

Download or read book Silicon Germanium SiGe Nanostructures written by Y. Shiraki and published by Elsevier. This book was released on 2011-02-26 with total page 649 pages. Available in PDF, EPUB and Kindle. Book excerpt: Nanostructured silicon-germanium (SiGe) opens up the prospects of novel and enhanced electronic device performance, especially for semiconductor devices. Silicon-germanium (SiGe) nanostructures reviews the materials science of nanostructures and their properties and applications in different electronic devices. The introductory part one covers the structural properties of SiGe nanostructures, with a further chapter discussing electronic band structures of SiGe alloys. Part two concentrates on the formation of SiGe nanostructures, with chapters on different methods of crystal growth such as molecular beam epitaxy and chemical vapour deposition. This part also includes chapters covering strain engineering and modelling. Part three covers the material properties of SiGe nanostructures, including chapters on such topics as strain-induced defects, transport properties and microcavities and quantum cascade laser structures. In Part four, devices utilising SiGe alloys are discussed. Chapters cover ultra large scale integrated applications, MOSFETs and the use of SiGe in different types of transistors and optical devices. With its distinguished editors and team of international contributors, Silicon-germanium (SiGe) nanostructures is a standard reference for researchers focusing on semiconductor devices and materials in industry and academia, particularly those interested in nanostructures. Reviews the materials science of nanostructures and their properties and applications in different electronic devices Assesses the structural properties of SiGe nanostructures, discussing electronic band structures of SiGe alloys Explores the formation of SiGe nanostructuresfeaturing different methods of crystal growth such as molecular beam epitaxy and chemical vapour deposition

Book Stability of Germanium Nanostructures on Silicon 100

Download or read book Stability of Germanium Nanostructures on Silicon 100 written by Michael Reynaldo McKay and published by . This book was released on 2005 with total page 318 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Silicon and Germanium Nanostructures

Download or read book Silicon and Germanium Nanostructures written by Xiaotang Lu and published by . This book was released on 2015 with total page 404 pages. Available in PDF, EPUB and Kindle. Book excerpt: A variety of chemical routes exist for a wide range of nanomaterials with tunable size, shape, composition and surface chemistry. Of these materials, silicon (Si) and germanium (Ge) nanomaterials have been some of the most challenging to synthesize. Solution-liquid-solid (SLS) growth of Si was studied using tin (Sn) as the seeding metal. Si nanorods with narrow diameters can be grown by the decomposition of trisilane in hot squalane in the presence of Sn nanocrystals. Photoluminescence could be obtained from the Si nanorods by thermal hydrosilylation passivation. This colloidal synthesis could be further simplified to a single-step reaction procedure by the in situ formation of Sn seed particles. In addition to trisilane as a Si source, isotetrasilane, neopentasilane and cyclohexasilane were studied for Si nanorod growth: all three reactants enabled nanorod formation at lower growth temperatures. A monophenylsilane (MPS) enhanced growth was discovered for supercritical fluid-liquid-solid (SFLS) growth of Ge nanowires that enables the Ge conversion of ~100%. A variety of metalorganic compounds were studied for replacing pre-synthesized metal nanoparticles to induce Ge nanowire growth. Si and Ge nanowires are some of the most promising anode materials in lithium ion batteries (LIBs) because of their high lithium storage capacity. However, the significant chemical and physical changes that occur during cycling hamper their practical uses. In situ transmission electron microscopy (TEM) techniques were conducted to observe and understand structural and interfacial changes of the Si and Ge nanowires during electrochemical cycling; and, therefore, resolving the problems with current anodes by materials modification. The in situ TEM experiments showed that the incorporation of Sn into Si nanowires can enhance their rate capability. But the enhanced Li diffusion leads to the premature pore formation in Si nanowires. Ge nanowires has been discovered the potential as sodium ion battery anodes after an initial activation with a lithiation step to amorphize the nanowires.

Book Spin Coherence in Silicon silicon germanium Nanostructures

Download or read book Spin Coherence in Silicon silicon germanium Nanostructures written by James L. Truitt and published by . This book was released on 2004 with total page 148 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Proceedings of the National Meeting Silicon and Germanium Based Nanostructures

Download or read book Proceedings of the National Meeting Silicon and Germanium Based Nanostructures written by B. A. Andreev and published by . This book was released on 1999 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Silicon Germanium and Their Alloys

Download or read book Silicon Germanium and Their Alloys written by Gudrun Kissinger and published by CRC Press. This book was released on 2014-12-09 with total page 436 pages. Available in PDF, EPUB and Kindle. Book excerpt: Despite the vast knowledge accumulated on silicon, germanium, and their alloys, these materials still demand research, eminently in view of the improvement of knowledge on silicon–germanium alloys and the potentialities of silicon as a substrate for high-efficiency solar cells and for compound semiconductors and the ongoing development of nanodevices based on nanowires and nanodots. Silicon, Germanium, and Their Alloys: Growth, Defects, Impurities, and Nanocrystals covers the entire spectrum of R&D activities in silicon, germanium, and their alloys, presenting the latest achievements in the field of crystal growth, point defects, extended defects, and impurities of silicon and germanium nanocrystals. World-recognized experts are the authors of the book’s chapters, which span bulk, thin film, and nanostructured materials growth and characterization problems, theoretical modeling, crystal defects, diffusion, and issues of key applicative value, including chemical etching as a defect delineation technique, the spectroscopic analysis of impurities, and the use of devices as tools for the measurement of materials quality.

Book Group IV Semiconductor Nanostructures 2006 Volume 958

Download or read book Group IV Semiconductor Nanostructures 2006 Volume 958 written by Leonid Tsybeskov and published by . This book was released on 2007-03-28 with total page 336 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book focuses on advances in materials science and device applications of nanostructures composed of Si, Ge, diamond, SiGe and SiCGe. Continuous progress in the development of reproducibly grown quantum dots, wires and wells has produced a new class of functional materials and devices with characteristic dimensions less than 50nm. The broad spectrum of these devices ranges from commercially offered high-mobility transistors using strained Si to exploratory SiGe nanostructures for integrated optical interconnects and THz lasers. This book brings together researchers from chemistry, physics, biology, materials science and engineering to share and discuss both the challenges and progress towards a new generation of Si(SiGe, SiCGe)-based novel functional structures and devices. Topics include: light emission and photonic devices; Ge, SiGe and diamond nanostructures; strains, Si/Ge films and layers and Si nanocrystals.

Book Properties of Silicon Germanium and SiGe Carbon

Download or read book Properties of Silicon Germanium and SiGe Carbon written by Erich Kasper and published by Inst of Engineering & Technology. This book was released on 2000 with total page 358 pages. Available in PDF, EPUB and Kindle. Book excerpt: The industrial relevance of SiGe has increased dramatically in the last few years with the manufacture of heterojunction bipolar circuits for the commercial wireless and datacomms markets by IBM and TEMIC. Major high technology companies see the development and use of SiGe as an important part of their strategy, so that there is a strong impetus to improve its characterization and exploitation. This liberally illustrated and fully indexed volume distills in a homogeneous, structured way the expertise of some 40 invited authors to comprehensively review the whole range of properties as well as SiGe; C, self-assembled nanostructures, quantum effects and device trends.

Book Solution Grown Silicon and Germanium Nanostructures

Download or read book Solution Grown Silicon and Germanium Nanostructures written by Aaron Michael Chockla and published by . This book was released on 2012 with total page 738 pages. Available in PDF, EPUB and Kindle. Book excerpt: Solution-grown silicon and germanium nanowires were produced using various solvents and nanocrystalline seed materials. Silicon nanowires grown using monophenylsilane as the silicon source and gold catalyst seeds were made into a freestanding, lightweight, mechanically robust fabric and tested as a negative electrode material in lithium ion batteries. Annealing the fabric under reducing atmosphere converts the intrinsic poly(phenylsilane) shell into a highly conductive carbonaceous coating, improving Li storage behavior. Reduced graphite oxide (graphene) was studied as a freestanding support for gold-seeded germanium and silicon nanowires, the latter grown using trisilane. Graphene improves capacity retention for germanium nanowires but shows little improvement for silicon. Slurry-cast films of nanowires were also tested as negative electrodes in lithium ion batteries using a variety of electrolyte solvent / binder combinations. Gold is detrimental to performance of silicon nanowires grown using trisilane. Removing gold through a simple wet etching procedure dramatically improves capacity retention. Silicon nanowires were also synthesized using in-situ formed tin seeds. Tin-seeded nanowires are easier to produce and outperform gold-seeded wires in lithium ion batteries. Germanium nanowires perform exceptionally well under high current loads when cycled using electrolyte solutions that contain fluoroethylene carbonate and show promise for high- power applications. Controlled synthesis of solution-grown germanium nanorods is demonstrated using nanocrystalline bismuth seeds. The addition of poly(vinylpyrrolidinone) / hexadecene copolymer leads to branched nanorods. Absorbance spectra were calculated using the discrete dipole approximation to compare against spectra obtained experimentally. The absorbance spectra and electric field internal to the nanorods depend highly on nanorod orientation. The presence of bismuth or gold at the tip of the nanorods also significantly alters the spectra and electric fields. Ligand and surface chemistry of solution grown indium phosphide nanowires is also examined. Octylphosphonic acid and hexadecylamine are both essential for the growth of single crystalline indium phosphide nanowires. Potential solution synthesis routes to indium (III) oxide nanowires and indium phosphide nanowires with twinning superlattice structure are presented. Various phosphoric acid derivatives were tested in place of octylphosphonic acid and the efficacy of each is discussed.

Book Properties of Silicon Germanium and SiGe

Download or read book Properties of Silicon Germanium and SiGe written by Erich Kasper and published by Inst of Engineering & Technology. This book was released on 1999-12 with total page 372 pages. Available in PDF, EPUB and Kindle. Book excerpt: The industrial relevance of SiGe has increased dramatically in the last few years with the manufacture of heterojunction bipolar circuits for the commercial wireless and datacomms markets by IBM and TEMIC, with over 20 companies planning manufacture in the near future. Major high technology companies see the development and use of SiGe as an important part of their strategy, so that there is a strong impetus to improve its characterization and exploitation. This liberally illustrated and fully indexed volume distils in a homogeneous, structured way the expertise of some 40 invited authors to comprehensively review the whole range of properties as well as SiGe: C, self-assembled nanostructures, quantum effects and device trends. The book contains 75% more text than Prof. Kasper's earlier book Properties of strained and relaxed SiGe (INSPEC, IEE, 1995), thoroughly updates its content and adds many new topics.

Book Synthesis of Silicon germanium Nanowires and Field Emission Studies of 1 D Nanostructures

Download or read book Synthesis of Silicon germanium Nanowires and Field Emission Studies of 1 D Nanostructures written by Joonho Bae and published by . This book was released on 2007 with total page 218 pages. Available in PDF, EPUB and Kindle. Book excerpt: Using the vapor-liquid-solid (VLS) growth method, silicon nanowires and germanium nanowires are grown. We find the high growth rate is responsible for the silicon nanowires with less growth defects when they are grown by use of silicon tetrachloride as a precursor and hydrogen as a carrier gas. Based on this funding, large area, high aspect ratio, h111i oriented silicon nanowires are successfully grown on Si (111) and Si (100). Novel growth mechanisms of VLS growth method were discovered in SiOx nanoflowers and silicon nanocones. In SiOx nanoflowers grown at the tip of silicon nanowires, it is found that they are produced via the enhanced oxidation of silicon at the gold-silicon interface. Furthermore, the analysis of the flower pattern reveals that it is the observation of the dense branching morphology on nanoscale and on spherical geometry. For the silicon nanocones, they are grown by the in situ etching of the catalysts of Ga/Al by HCl during the growth. Scanning electron microscopy (SEM), transmission electron microscopy (TEM) reveal that the nanocones are composed of amorphous silicon oxides and crystalline Si. Based on the similar chemistry of hydrogen reduction of SiCl4 for the growth of silicon nanowires, single crystalline germanium nanowires are grown by use of GeCl4 as a precursor and H2 as a carrier gas. As one of important application of one dimensional nanostructures, the field emission properties of 1-D nanostructures are explored. The field emission properties of a single graphite nanocone are measured in SEM. The inter-electrode separation is controlled using scanning tunneling microscopy (STM) approach method, allowing the precise and ne determination of the separation. Its Fowler-Nordheim plot shows it emits currents in accordance with the Fowler-Nordheim field emission. Its onset voltage, field enhancement factor show that its basic field emission parameters are comparable to those of a single carbon nanotube. It is observed that single nanocone is damaged after emitting a current of about 100 nA, which seems to be due to its hollow interior structure.

Book Solution Synthesis and Characterization of Silicon and Silicon germanium Nanoparticles

Download or read book Solution Synthesis and Characterization of Silicon and Silicon germanium Nanoparticles written by Katherine Ann Pettigrew and published by . This book was released on 2004 with total page 350 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Device Applications of Silicon Nanocrystals and Nanostructures

Download or read book Device Applications of Silicon Nanocrystals and Nanostructures written by Nobuyoshi Koshida and published by Springer Science & Business Media. This book was released on 2008-12-11 with total page 350 pages. Available in PDF, EPUB and Kindle. Book excerpt: Recent developments in the technology of silicon nanocrystals and silicon nanostructures, where quantum-size effects are important, are systematically described including examples of device applications. Due to the strong quantum confinement effect, the material properties are freed from the usual indirect- or direct-bandgap regime, and the optical, electrical, thermal, and chemical properties of these nanocrystalline and nanostructured semiconductors are drastically changed from those of bulk silicon. In addition to efficient visible luminescence, various other useful material functions are induced in nanocrystalline silicon and periodic silicon nanostructures. Some novel devices and applications, in fields such as photonics (electroluminescence diode, microcavity, and waveguide), electronics (single-electron device, spin transistor, nonvolatile memory, and ballistic electron emitter), acoustics, and biology, have been developed by the use of these quantum-induced functions in ways different from the conventional scaling principle for ULSI.