Download or read book Si Front End Processing Physics and Technology II of Dopant Defect Interactions II written by Aditya Agarwal and published by Cambridge University Press. This book was released on 2014-06-05 with total page 438 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book, first published in 2001, focuses on the formation of electrical junctions in the front-end processing of devices sized for the approaching end-of-the-roadmap. To address these issues researchers come together to share results and physical models that describe phenomena which control the three-dimensional dopant profile. Highlights focus on future issues in device scaling and how they can be quantitatively linked with the requirements placed on dopant profile and junction formation. Emphasis is on shallow junction depth and high-concentration activation as well as the extremely tight limits on junction abruptness. An excellent overview of the field of implant and annealing in silicon devices is also provided. Topics include: the challenges of device scaling; 2-D dopant characterization; Si front-end processing; ion implantation and shallow junction technology; group III dopant diffusion and activation; carbon diffusion and interaction with point defects; group V diffusion and activation; vacancy-type defects - interaction and characterization; regrown amorphous layers and structure and properties of point and extended defects.
Download or read book Si Front End Processing Physics and Technology II of Dopant Defect Interactions II Volume 610 written by Aditya Agarwal and published by . This book was released on 2001-04-09 with total page 448 pages. Available in PDF, EPUB and Kindle. Book excerpt: This proceedings of the April 2000 symposium deals with formation of electrical junctions in the front-end processing of devices for the approaching end-of-the-roadmap. The 60 papers address 2D dopant characterization, ion implantation and shallow junction technology, group III diffusion and activation, carbon diffusion and activation, group V diffusion and activation, vacancy-type defects, regrown amorphous layers, and structure and properties of point and extended defects. Topics include ultra-shallow junction formation and gate activation in deep-submicron CMOS, low energy implantation of boron with decaborane ions, modeling ramp rate effects on shallow junction formation, clustering equilibrium and deactivation kinetics in As doped silicon, and atomistic modeling of complex silicon processing scenarios. c. Book News Inc.
Download or read book Intrinsic Point Defects Impurities and Their Diffusion in Silicon written by Peter Pichler and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 576 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book contains the first comprehensive review of intrinsic point defects, impurities and their complexes in silicon. Besides compiling the structures, energetic properties, identified electrical levels and spectroscopic signatures, and the diffusion behaviour from investigations, it gives a comprehensive introduction into the relevant fundamental concepts.
Download or read book Si Front End Processing Volume 669 written by Erin C. Jones and published by . This book was released on 2001-12-14 with total page 362 pages. Available in PDF, EPUB and Kindle. Book excerpt: The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Download or read book Simulation of Semiconductor Processes and Devices 2007 written by Tibor Grasser and published by Springer Science & Business Media. This book was released on 2007-11-18 with total page 472 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume contains the proceedings of the 12th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007, held September 2007 in Vienna, Austria. It provides a global forum for the presentation and discussion of recent advances and developments in the theoretical description, physical modeling and numerical simulation and analysis of semiconductor fabrication processes, device operation and system performance.
Download or read book Si Front End Processing Volume 568 written by Hans-Joachim L. Gossmann and published by Cambridge University Press. This book was released on 1999-07-26 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Electrical device parameters are largely set by the three-dimensional dopant profiles created during front-end processing. Ion implantation, silicidation and annealing treatments in various ambients influence the Si native point-defect populations in characteristic ways, so that the final dopant profile of a device is the result of complex interactions between dopant atoms, Si point defects and the various interfaces. These interactions can no longer be assumed to be at equilibrium and one-dimensional. This makes computer-aided technology development imperative, requiring accurate, truly predictive, physics-based process simulation tools. The reliability of these tools depends, in turn, on data from laboratory-scale experiments to motivate and validate the physical models. This book reviews developments in experiment and modelling, and identifies key issues for future research. It broadens the focus of earlier symposia from strictly TCAD issues, to include sections on 2-D profiling, SiGe and nitrogen, and by including a joint session with the 'Advanced Semiconductor Wafer Engineering' symposium titled Mechanisms of Point-Defect Interaction and Diffusion.
Download or read book Si Front end Processing written by and published by . This book was released on 1999 with total page 320 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Dynamics in Small Confining Systems V Volume 651 written by J. M. Drake and published by . This book was released on 2001-08-02 with total page 412 pages. Available in PDF, EPUB and Kindle. Book excerpt: The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Download or read book Advanced Short time Thermal Processing for Si based CMOS Devices written by Fred Roozeboom and published by The Electrochemical Society. This book was released on 2003 with total page 488 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Influences of Interface and Dislocation Behavior on Microstructure Evolution Volume 652 written by Mark Aindow and published by . This book was released on 2001-08-20 with total page 360 pages. Available in PDF, EPUB and Kindle. Book excerpt: The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Download or read book Structure and Mechanical Properties of Nanophase Materials Theory and Computer Simulations Vs Experiment Volume 634 written by Diana Farkas and published by . This book was released on 2001-07-11 with total page 338 pages. Available in PDF, EPUB and Kindle. Book excerpt: The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Download or read book Multiscale Modelling of Materials written by and published by . This book was released on 2000 with total page 280 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Ferroelectric Thin Films written by and published by . This book was released on 2002 with total page 456 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Dynamics in Small Confining Systems written by and published by . This book was released on 2000 with total page 358 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Ferroelectric Thin Films IX written by Paul C. McIntyre and published by . This book was released on 2001 with total page 552 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Filled and Nanocomposite Polymer Materials written by Alan I. Nakatani and published by . This book was released on 2001 with total page 360 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book II IV Compound Semiconductor Photovoltaic Materials Volume 668 written by Robert Birkmire and published by . This book was released on 2001-10-15 with total page 608 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book focuses on materials issues related to Cu(In,Ga)(Se,S)2 and CdTe-based polycrystalline thin-film photovoltaic solar cells and related oxides and chalcogenides. Phase equilibrium and thermochemical kinetic aspects of the absorber layer formation of CdTe and Cu(In,Ga)(Se,S)2 are emphasized and several papers on micro-analytical analysis report on detailed structural properties of thin films. The use of flexible plastic or metal foil substrates as an alternative to glass is addressed in terms of solar-cell performance and limitations imposed by the nature of the substrates. Properties of defects and interfaces in CdTe and CIGSS are highlighted using electrical, optical, and micro-analytical tools. While film properties are correlated to device physics, controversy still exists on the detailed operation of both CdTe and CIGSS devices. Topics include: materials and synthesis; thin films on alternate substrates; defects; growth and junction formation; surfaces and interfaces and film and device characterization.
