Download or read book Si based Germanium Tin Photodetectors for Infrared Imaging and High speed Detection written by Huong Tran and published by . This book was released on 2021 with total page 432 pages. Available in PDF, EPUB and Kindle. Book excerpt: Infrared (IR) radiation spans the wavelengths of the windows: (1) near-IR region ranging from 0.8 to 1.0 om, (2) shortwave IR (SWIR) ranging from 1.0 to 3.0 om, (3) mid-wave IR (MWIR) region covering from 3.0 to 5.0 om, (4) longwave IR (LWIR) spanning from 8.0 to 12.0 om, and (5) very longwave IR extending beyond 12.0 om. The MWIR and LWIR regions are important for night vision in the military, and since the atmosphere does not absorb at these wavelengths, they are also used for free-space communications and astronomy. Automotive and defect detection in the food industry and electronic circuits also use IR detection as non-contact inspection methods. IR detection is also applied in the medical field. The market of SWIR and MWIR detectors is primarily dominated by mature technology from III-V systems such as indium gallium arsenide (InGaAs and extended InGaAs), indium antimonide (InSb), from II-VI such as mercury cadmium telluride (MCT), lead sulfide (PbS), and from group IV such as silicon (Si) and germanium (Ge) for shorter wavelength. However, the mature IR photodetector technology is expensive, demands to operate at low temperatures, and has complicated fabrication processes. In order to lower cost by mass production, many approaches have been developed towards the hybrid integration of III-Vs or II-VIs on a Si substrate. At the same time, it is desirable to develop an alternative material to reduce the cost and improve the performance for high-temperature operations. The discovery of group IV (Si)GeSn alloys has opened a route for a new generation of IR detectors. The work in this dissertation set out to develop Si-based Ge1-xSnx photodetectors for low-cost infrared imaging and high-speed detection. A study of effective carrier lifetime and optical properties of Ge1-xSnx materials is presented. The carrier lifetime is then applied to model the Ge1-xSnx photodetectors. For optical properties of Ge1-xSnx materials, two empirical formulae with extracted constants and coefficients were developed: (1) Absorption coefficient. The absorption regarding Urbach tail, indirect and direct bandgap transitions were comprehensively considered; (2) refractive index. The developed formulae could simplify the optoelectronic device design process due to their parameter-based expressions. A comprehensive study of Si-based GeSn mid-infrared photodetectors is carried out. A set of photoconductors with Sn compositions ranging from 10.5% to 22.3% show the cutoff wavelength to be extended to 3.65 om. The devices' peak D* is comparable to that of commercial extended-InGaAs detectors. The GeSn photodiodes are also explored with an in-depth analysis of a dark current. The dark current is suppressed as the photodiode was passivated. Moreover, mid-infrared images were captured using GeSn photodetectors, showing the comparable image quality with that acquired by using commercial PbSe detectors. The performance of GeSn photodiodes with 6.44 % and 9.24 % Sn is evaluated under high-speed measurements and simulations. The cutoff wavelength is extended up to 2.2 om and 2.5 om for 6.44 % and 9.24 % Sn devices, respectively. The photodiodes' bandwidth is 1.78 GHz, and the simulation shows excellent agreement with measurement results.
Download or read book Si based Germanium Tin Photodetectors for Short wave and Mid wave Infrared Detections written by Thach Ngoc Pham and published by . This book was released on 2018 with total page 286 pages. Available in PDF, EPUB and Kindle. Book excerpt: The demand of light-weight and inexpensive imaging system working in the infrared range keeps increasing for the last decade, especially for civil applications. Although several group IV materials such as silicon and germanium are used to realize detectors in the visible and near infrared region, they are not the efficient approach for imaging system in the short-wave infrared detection range and beyond due to bandgap limit. On the other hand, this market is heavily relied upon mature technology from III-V and II-VI elements over years, which are costly to growth and incompatible with available Si complementary metal-oxide-semiconductor (CMOS) foundries. This limits the fabrication of large scale focal plan arrays detectors in this detection range. Therefore, a material system that meets the necessary requirements has long been in demand. The Ge1-xSnx material system has been introduced as a potential solution for low-cost high-performance photodetector for short-wave infrared towards mid-infrared detections due to its compatibility with Si CMOS process and wide detection range by incorporating more Sn in the alloy. Since then, immense growth efforts have been made to improve the material quality reaching device-quality using commercial chemical vapor deposition (CVD) reactors or molecular beam epitaxy (MBE) chambers. This dissertation will develop Si-based GeSn photodetectors technology to realize low-cost high-performance focal plane arrays detectors working in the SWIR towards MIR. It began with the development of fabrication process of single element GeSn photoconductor and photodiode, followed by systematic characterization and analysis of detectors' figures of merits to provide a more optimized structure. A peak responsivity of 20 A/W (photoconductor) and 0.34 A/W (photodiode) at 2 μm were achieved. An external quantum efficiency of 20 % was reported for the first time. The highest value of specific detectivity D* is only 3-4 times less than commercially available Extended-InGaAs detector. Surface passivation technique was also pursued to reduce surface leakage current. Finally, infrared imaging capability was demonstrated using single pixel detector. The study involves a wide range of Sn composition from 10 to 22 %.
Download or read book Infrared and Terahertz Detectors Third Edition written by Antoni Rogalski and published by CRC Press. This book was released on 2019-01-10 with total page 1044 pages. Available in PDF, EPUB and Kindle. Book excerpt: This new edition of Infrared and Terahertz Detectors provides a comprehensive overview of infrared and terahertz detector technology, from fundamental science to materials and fabrication techniques. It contains a complete overhaul of the contents including several new chapters and a new section on terahertz detectors and systems. It includes a new tutorial introduction to technical aspects that are fundamental for basic understanding. The other dedicated sections focus on thermal detectors, photon detectors, and focal plane arrays.
Download or read book Photodetectors written by Bahram Nabet and published by Woodhead Publishing. This book was released on 2023-02-10 with total page 516 pages. Available in PDF, EPUB and Kindle. Book excerpt: Every bit of information that circulates the internet across the globe is a pulse of light, that at some point will need to be converted to an electric signal in order to be processed by the electronic circuitry in our data centers, computers, and cell phones. Photodetectors (PD's) perform this conversion with ultra high speed and efficiency, in addition to being ubiquitously present in many other devices ranging from the mundane TV remote controls, to ultra high resolution instrumentation used in Laser Interferometer Gravitational Wave Observatory (LIGO) that reach the edge of the universe and measure gravitational waves. The second edition of "Photodetectors" fully updates the popular first edition with updated information covering the state-of-the-art in modern photodetectors. The 2nd edition starts with basic metrology of photodetectors and common figures-of-merit to compare various devices. It follows with chapters that discuss single-photon detection with Avalanche Photodiodes; organic photodetectors that can be inkjet printed; and silicon-germanium PDs popular in burgeoning field of Silicon Photonics. Internationally recognized experts contribute chapters on one-dimensional, nanowire, PDs as well as high speed zero-dimensional, quantum dot, versions that increase the spectral span as well as speed and sensitivity of PDs and can be produced on various substrates. Solar-blind PDs that operate in harsh environments such as deep space, or rocket engines, are reviewed and new devices in GaN technology . Novel Plasmonic PDs, as well as devices which employ micro-plasma of confined charge in order to make devices that overcome speed limitation of transfer of electronic charge, are covered in other chapters. Using different, novel technologies, CMOS compatible devices are described in two chapters, and ultra high speed PDs that use low-temperature-grown GaAs (LT-GaAs) to detect fast THz signals are reviewed in another chapter. Photodetectors used in application areas of Silicon-Photonics and Microwave-Photonics are reviewed in final chapters of this book. All chapters are of a review nature, providing a perspective of the field before concentrating on particular advancements. As such, the book should appeal to a wide audience that ranges from those with general interest in the topic, to practitioners, graduate students and experts who are interested in the state-of-the-art in photodetection. - Addresses various photodetector devices from ultra high speed to ultra high sensitivity, capable of operation in harsh environments - Considers a range of applications for this important technology, including silicon photonics and photonic integrated circuits - Includes discussions of detectors based on reduced dimensional systems such as quantum wells, nanowires, and quantum dots, as well as travelling wave, and plasmonic detectors
Download or read book Handbook of Silicon Photonics written by Laurent Vivien and published by Taylor & Francis. This book was released on 2016-04-19 with total page 831 pages. Available in PDF, EPUB and Kindle. Book excerpt: The development of integrated silicon photonic circuits has recently been driven by the Internet and the push for high bandwidth as well as the need to reduce power dissipation induced by high data-rate signal transmission. To reach these goals, efficient passive and active silicon photonic devices, including waveguide, modulators, photodetectors,
Download or read book Silicon based Infrared Photodetectors for Low cost Imaging Applications written by Joshua M. Duran and published by . This book was released on 2019 with total page 177 pages. Available in PDF, EPUB and Kindle. Book excerpt: Infrared imaging is a powerful capability that has been technologically driven primarily by the defense industry over the past several decades. As a result, ultra-high-performance infrared imaging arrays with specialized functionality have been developed but at a relatively high cost. Meanwhile, economy of scale has driven the price of visible complementary metal oxide-semiconductor (CMOS) image sensors down drastically while simultaneously providing greater on-chip capability and performance. Silicon-based infrared sensors have the potential to leverage modern CMOS advancements and cost, but poor performance has inhibited the widespread adoption of this technology. In this work, I explored the potential for novel silicon based infrared sensors that exploit nanoscale structures to provide new methods of photodetection in silicon beyond the bulk bandgap response. Nanostructure fabrication developments and challenges were also investigated with the perspective of applying the underlying structure as a platform to detect infrared photons. Proposed solutions include improvement to existing detector technology (Schottky barrier photodiodes) as well as novel detector architectures (silicon quantum walls) that leverage the unique geometry of nanostructured silicon.
Download or read book Infrared Photodetectors Based on Low Dimensional Materials written by Nan Guo and published by Springer. This book was released on 2018-09-27 with total page 61 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is focused on the study of physical mechanisms and device design for achieving high-performance infrared photodetection based on low-dimensional materials. Through theory analysis, material characterization and photo-electric measurements, it provides solutions to the trade-off problems which are commonly encountered in traditional infrared photodetectors and presents novel methods to improve the responsivity, detectivity and response speed. Researchers and scientists in the field of opto-electronic device can benefit from the book.
Download or read book Infrared Detectors written by Antonio Rogalski and published by CRC Press. This book was released on 2010-11-15 with total page 900 pages. Available in PDF, EPUB and Kindle. Book excerpt: Completely revised and reorganized while retaining the approachable style of the first edition, Infrared Detectors, Second Edition addresses the latest developments in the science and technology of infrared (IR) detection. Antoni Rogalski, an internationally recognized pioneer in the field, covers the comprehensive range of subjects necessary to un
Download or read book Smart CMOS Image Sensors and Applications written by Jun Ohta and published by CRC Press. This book was released on 2020-05-12 with total page 295 pages. Available in PDF, EPUB and Kindle. Book excerpt: Revised and expanded for this new edition, Smart CMOS Image Sensors and Applications, Second Edition is the only book available devoted to smart CMOS image sensors and applications. The book describes the fundamentals of CMOS image sensors and optoelectronic device physics, and introduces typical CMOS image sensor structures, such as the active pixel sensor (APS). Also included are the functions and materials of smart CMOS image sensors and present examples of smart imaging. Various applications of smart CMOS image sensors are also discussed. Several appendices supply a range of information on constants, illuminance, MOSFET characteristics, and optical resolution. Expansion of smart materials, smart imaging and applications, including biotechnology and optical wireless communication, are included. Features • Covers the fundamentals and applications including smart materials, smart imaging, and various applications • Includes comprehensive references • Discusses a wide variety of applications of smart CMOS image sensors including biotechnology and optical wireless communication • Revised and expanded to include the state of the art of smart image sensors
Download or read book High operating temperature Infrared Photodetectors written by Jozef Piotrowski and published by SPIE-International Society for Optical Engineering. This book was released on 2007 with total page 266 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents approaches, materials, and devices that eliminate the cooling requirements of IR photodetectors operating in the middle- and long-wavelength ranges of the IR spectrum. It is based mainly on the authors' experiences in developing and fabricating near room temperature HgCdTe detectors at Vigo Systems Ltd. and at the Institute of Applied Physics Military University of Technology (both in Warsaw, Poland). The text also discusses solutions to other specific problems of high-temperature detection, such as poor collection efficiency due to a short diffusion length, the Johnson-Nyquist noise of parasitic impedances, and interfacing of very low resistance devices to electronics. Suitable for graduate students in physics and engineering who have received a basic preparation in modern solid state physics and electronic circuits, this book will also be of interest to individuals who work with aerospace sensors and systems, remote sensing, thermal imaging, military imaging, optical telecommunications, IR spectroscopy, and lidar.
Download or read book Energy Research Abstracts written by and published by . This book was released on 1990 with total page 840 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Intersubband Infrared Photodetectors written by Victor Ryzhii and published by World Scientific. This book was released on 2003-06-25 with total page 359 pages. Available in PDF, EPUB and Kindle. Book excerpt: Infrared technologies are very important for a wide range of military, scientific and commercial applications. Devices and systems based on semiconductor heterostructure and quantum well and quantum dot structures open up a new era in infrared technologies.This book deals with various topics related to the latest achievements in the development of intersubband infrared photodetectors, reviewed by top experts in the field. It covers physical aspects of the operation of the devices as well as details of their design in different applications. The papers included in the book will be useful for researchers and engineers interested in the physics of optoelectronic devices as well as their practical design and applications.
Download or read book Characteristics of Germanium tin Photodetectors and Terahertz Microbolometers written by Matthew John Coppinger and published by . This book was released on 2012 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Infrared and terahertz detectors have applications in fields such as medicine, industry, and scientific research. Methods for generating and detecting infrared and terahertz radiation are constantly evolving. This study will explore two general areas of terahertz and infrared technologies. First, real-time see-through imaging devices and applications using terahertz and long wavelength radiation will be investigated. Second, the growth and photocurrent spectroscopy of group IV optoelectronic detectors based on germanium quantum dots and Ge x Sn 1- x alloys will be investigated. Terahertz radiation, synonymous with the extreme long-wavelength infrared radiation, was so named because of the frequencies that photons in this region of the electromagnetic spectrum exhibit. Many non-aqueous and non-metallic materials are transparent in the terahertz regime. Due to a dearth of room temperature detectors and high powered sources at terahertz frequencies, attempts to image at this frequency have met with limited success. In this work, the broadband imaging capabilities of a vanadium oxide microbolometer camera were investigated in the far infrared for applications in real-time terahertz imaging and analysis. A blackbody radiator was employed as the broadband terahertz source to illuminate the microbolometer array with all components in a nitrogen purged enclosure. Data was taken using several different levels of radiant flux intensity, and the noise equivalent differential temperature (NEDT) and the noise equivalent power (NEP) were recorded over a range of blackbody intensities. Real-time reflection-mode terahertz imaging with the microbolometer camera using a powerful synchrotron terahertz illumination source was then studied. For the first time, the capture of video-rate terahertz movies of hidden moving objects was demonstrated. Group IV materials that can be monolithically integrated with silicon substrates were investigated as optoelectronic device candidates. Tensile strain in Ge quantum dots was confirmed, and a narrowing of the energy bandgap compared to bulk Ge was observed. Photoconductors fabricated from Ge x Sn 1- x alloys grown by molecular beam epitaxy (MBE) were characterized using photocurrent spectroscopy. The optical absorption edge was observed to decrease in energy with increasing Sn content, and the sample with the highest atomic percentage Sn was found to exhibit some properties consistent with a direct bandgap in k -space. The bandgap of the Ge x Sn 1- x alloys exhibited a temperature dependence. Bandgaps for the Ge x Sn 1- x alloys were estimated over the temperature range 0 K
Download or read book 2D Materials for Infrared and Terahertz Detectors written by Antoni Rogalski and published by CRC Press. This book was released on 2020-10-26 with total page 182 pages. Available in PDF, EPUB and Kindle. Book excerpt: 2D Materials for Infrared and Terahertz Detectors provides an overview of the performance of emerging detector materials, while also offering, for the first time, a comparison with traditional materials used in the fabrication of infrared and terahertz detectors. Since the discovery of graphene, its applications to electronic and optoelectronic devices have been intensively researched. The extraordinary electronic and optical properties allow graphene and other 2D materials to be promising candidates for infrared (IR) and terahertz (THz) photodetectors, and yet it appears that the development of new detectors using these materials is still secondary to those using traditional materials. This book explores this phenomenon, as well as the advantages and disadvantages of using 2D materials. Special attention is directed toward the identification of the most-effective hybrid 2D materials in infrared and terahertz detectors, as well as future trends. Written by one of the world’s leading researchers in the field of IR optoelectronics, this book will be a must-read for researchers and graduate students in photodetectors and related fields. Features • Offers a comprehensive overview of the different types of 2D materials used in fabrication of IR and THz detectors, and includes their advantages/disadvantages • The first book to compare new detectors to a wide family of common, commercially available detectors that use traditional materials.
Download or read book Miniaturized Silicon Photodetectors written by Maurizio Casalino and published by MDPI. This book was released on 2021-01-15 with total page 148 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon (Si) technologies provide an excellent platform for the design of microsystems where photonic and microelectronic functionalities are monolithically integrated on the same substrate. In recent years, a variety of passive and active Si photonic devices have been developed, and among them, photodetectors have attracted particular interest from the scientific community. Si photodiodes are typically designed to operate at visible wavelengths, but, unfortunately, their employment in the infrared (IR) range is limited due to the neglectable Si absorption over 1100 nm, even though the use of germanium (Ge) grown on Si has historically allowed operations to be extended up to 1550 nm. In recent years, significant progress has been achieved both by improving the performance of Si-based photodetectors in the visible range and by extending their operation to infrared wavelengths. Near-infrared (NIR) SiGe photodetectors have been demonstrated to have a “zero change” CMOS process flow, while the investigation of new effects and structures has shown that an all-Si approach could be a viable option to construct devices comparable with Ge technology. In addition, the capability to integrate new emerging 2D and 3D materials with Si, together with the capability of manufacturing devices at the nanometric scale, has led to the development of new device families with unexpected performance. Accordingly, this Special Issue of Micromachines seeks to showcase research papers, short communications, and review articles that show the most recent advances in the field of silicon photodetectors and their respective applications.
Download or read book ERDA Energy Research Abstracts written by and published by . This book was released on 1989 with total page 848 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book High performance Germanium Photodetectors on Silicon Reflecting Substrates for Long haul Optical Communications written by Olufemi Isiade Dosunmu and published by . This book was released on 2005 with total page 300 pages. Available in PDF, EPUB and Kindle. Book excerpt: Abstract: In this work we have designed and fabricated resonant cavity enhanced (RCE) germanium-on-silicon (Ge-on-Si) photodetectors, operating around the 1550 nm wavelength for applications in long-haul communications. Without sacrificing bandwidth, the spectral response of the Ge photodetector is enhanced by fabricating the Ge detector within a Fabry-Perot cavity, where the Ge active region is grown atop one or two-period silicon-on-insulator (SOI) substrates designed for maximum reflectivity (>80%) in the 1300 nm-1600 nm wavelength range. The responsivity of these Ge/SOI RCE photodetectors around 1550 nm is further enhanced by the increased absorption coefficient due to the tensile strain-induced bandgap narrowing effect within the Ge film. Detector bandwidths approaching 13 GHz and quantum efficiencies of nearly 60% have been measured around 1550 nm, which demonstrates the compatibility of these Ge/SOI photodetectors with 10 Gb/s data communication systems. In addition, the measured full-width at half-maximum (FWHM) of the spectral resonant peak is approximately 50 nm, encompassing the entire C-band wavelength range (1528 nm-1565 nm) used in long-haul optical communications, making these high-speed Ge detectors ideal for integration with WDM-based telecommunication systems. To the author's knowledge, these detectors are the fastest, most efficient Ge photodetectors fabricated directly on Si and optimized for 1550 nm operation.
