Download or read book Sensing of Non Volatile Memory Demystified written by Swaroop Ghosh and published by Springer. This book was released on 2018-08-10 with total page 116 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book introduces readers to the latest advances in sensing technology for a broad range of non-volatile memories (NVMs). Challenges across the memory technologies are highlighted and their solutions in mature technology are discussed, enabling innovation of sensing technologies for future NVMs. Coverage includes sensing techniques ranging from well-established NVMs such as hard disk, flash, Magnetic RAM (MRAM) to emerging NVMs such as ReRAM, STTRAM, FeRAM and Domain Wall Memory will be covered.

Download or read book Metal Oxides for Non volatile Memory written by Panagiotis Dimitrakis and published by Elsevier. This book was released on 2022-03-01 with total page 534 pages. Available in PDF, EPUB and Kindle. Book excerpt: Metal Oxides for Non-volatile Memory: Materials, Technology and Applications covers the technology and applications of metal oxides (MOx) in non-volatile memory (NVM) technology. The book addresses all types of NVMs, including floating-gate memories, 3-D memories, charge-trapping memories, quantum-dot memories, resistance switching memories and memristors, Mott memories and transparent memories. Applications of MOx in DRAM technology where they play a crucial role to the DRAM evolution are also addressed. The book offers a broad scope, encompassing discussions of materials properties, deposition methods, design and fabrication, and circuit and system level applications of metal oxides to non-volatile memory. Finally, the book addresses one of the most promising materials that may lead to a solution to the challenges in chip size and capacity for memory technologies, particular for mobile applications and embedded systems. - Systematically covers metal oxides materials and their properties with memory technology applications, including floating-gate memory, 3-D memory, memristors, and much more - Provides an overview on the most relevant deposition methods, including sputtering, CVD, ALD and MBE - Discusses the design and fabrication of metal oxides for wide breadth of non-volatile memory applications from 3-D flash technology, transparent memory and DRAM technology

Download or read book Integrated Smart Sensors written by Gert van der Horn and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 210 pages. Available in PDF, EPUB and Kindle. Book excerpt: 1 1. 1 Introduction The (signal processing and storage) capacity ofthe human brain enables us to become powerful autonomous beings, but only if our brains operate in conjunction with (at least some of) our senses and muscles. Using these organs, we can interact with our environment, learn to adapt, and improve important aspects of our life. Similarly, the signal processing capabilities of modern electronics (computers) could be combined with electronic sensors and actuators to enable interaction with, and adaptation to, the (non-electrical) environment. This willlead to smarter and more powerful automated tools and machines. To facilitate and stimulate such a development, easy-to-use low-cost sensors are needed. The combination of electronic interface functions and a sensor in an integrated smart sensor, that provides a standard, digital, and bus-compatible output, would simplify the connection of sensors to standard electronic signal processors (microcontrollers, computers, etc. ). Currently, the calibration procedure, required for standardization of the sensor output signal level, contributes largely to the production costs of accurate sensors. To enable automation of the calibration procedure, and hence reduce the sensor fabrication costs, a digital calibrationjunction should be included in the smart sensor. INTEGRATED SMART SENSORS: Design and Calibration Introduction 1. 2 Sensors and actuators In industry many processes are electronically controlled. As depicted in Fig.

Download or read book Insulin Pump Therapy Demystified written by Gabrielle Kaplan-Mayer and published by Da Capo Lifelong Books. This book was released on 2009-03-17 with total page 208 pages. Available in PDF, EPUB and Kindle. Book excerpt: Increasing numbers of people with type 1 diabetes, all of whose lives depend on insulin, as well as type 2 diabetics, have already adopted the insulin pump, which replaces a regimen of insulin shots with a continuous delivery of insulin. Yet many who stand to benefit from "the pump" are put off by not fully understanding the device, and many already using it don't have anyone with whom to compare notes about its use. Now Gabrielle Kaplan-Mayer, who has used the pump for more than three years, cuts through common personal fears about the pump and offers insight into the day-to-day challenges -- and rewards -- of life with it. Drawing on interviews with more than seventy-five pump users, including Nicole Johnson, Miss America 1999, as well as diabetes experts and other health professionals, Kaplan-Mayer discusses how the pump affects your sex life, dealing with money issues, finding support, counting carbohydrates, and much more. Insulin Pump Therapy Demystified offers knowledgeable, informative, reassuring advice that all pump users -- current and future -- will find extremely valuable. Charts and tables add to this valuable insider's guide.

Download or read book Implementation of a Sensing Technique for Non volatile M R Memories written by Vivek Mehra and published by . This book was released on 1988 with total page 166 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Flash Memories written by Igor Stievano and published by BoD – Books on Demand. This book was released on 2011-09-06 with total page 278 pages. Available in PDF, EPUB and Kindle. Book excerpt: Flash memories and memory systems are key resources for the development of electronic products implementing converging technologies or exploiting solid-state memory disks. This book illustrates state-of-the-art technologies and research studies on Flash memories. Topics in modeling, design, programming, and materials for memories are covered along with real application examples.

Download or read book Rad hard Semiconductor Memories written by Cristiano Calligaro and published by CRC Press. This book was released on 2022-09-01 with total page 417 pages. Available in PDF, EPUB and Kindle. Book excerpt: Rad-hard Semiconductor Memories is intended for researchers and professionals interested in understanding how to design and make a preliminary evaluation of rad-hard semiconductor memories, making leverage on standard CMOS manufacturing processes available from different silicon foundries and using different technology nodes.In the first part of the book, a preliminary overview of the effects of radiation in space, with a specific focus on memories, will be conducted to enable the reader to understand why specific design solutions are adopted to mitigate hard and soft errors. The second part will be devoted to RHBD (Radiation Hardening by Design) techniques for semiconductor components with a specific focus on memories. The approach will follow a top-down scheme starting from RHBD at architectural level (how to build a rad-hard floor-plan), at circuit level (how to mitigate radiation effects by handling transistors in the proper way) and at layout level (how to shape a layout to mitigate radiation effects).After the description of the mitigation techniques, the book enters in the core of the topic covering SRAMs (synchronous, asynchronous, single port and dual port) and PROMs (based on AntiFuse OTP technologies), describing how to design a rad-hard flash memory and fostering RHBD toward emerging memories like ReRAM. The last part will be a leap into emerging memories at a very early stage, not yet ready for industrial use in silicon but candidates to become an option for the next wave of rad-hard components. Technical topics discussed in the book include:  Radiation effects on semiconductor components (TID, SEE) Radiation Hardening by Design (RHBD) Techniques Rad-hard SRAMs Rad-hard PROMs Rad-hard Flash NVMs Rad-hard ReRAMs Rad-hard emerging technologies

Download or read book Emerging Non Volatile Memories written by Seungbum Hong and published by Springer. This book was released on 2014-11-18 with total page 280 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is an introduction to the fundamentals of emerging non-volatile memories and provides an overview of future trends in the field. Readers will find coverage of seven important memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), Multiferroic RAM (MFRAM), Phase-Change Memories (PCM), Oxide-based Resistive RAM (RRAM), Probe Storage, and Polymer Memories. Chapters are structured to reflect diffusions and clashes between different topics. Emerging Non-Volatile Memories is an ideal book for graduate students, faculty, and professionals working in the area of non-volatile memory. This book also: Covers key memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), and Multiferroic RAM (MFRAM), among others. Provides an overview of non-volatile memory fundamentals. Broadens readers’ understanding of future trends in non-volatile memories.

Download or read book Charge Trapping Non Volatile Memories written by Panagiotis Dimitrakis and published by Springer. This book was released on 2017-02-14 with total page 215 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book describes the technology of charge-trapping non-volatile memories and their uses. The authors explain the device physics of each device architecture and provide a concrete description of the materials involved and the fundamental properties of the technology. Modern material properties, used as charge-trapping layers, for new applications are introduced. Provides a comprehensive overview of the technology for charge-trapping non-volatile memories; Details new architectures and current modeling concepts for non-volatile memory devices; Focuses on conduction through multi-layer gate dielectrics stacks.

Download or read book Error Correction Codes for Non Volatile Memories written by Rino Micheloni and published by Springer Science & Business Media. This book was released on 2008-06-03 with total page 338 pages. Available in PDF, EPUB and Kindle. Book excerpt: Nowadays it is hard to find an electronic device which does not use codes: for example, we listen to music via heavily encoded audio CD's and we watch movies via encoded DVD's. There is at least one area where the use of encoding/decoding is not so developed, yet: Flash non-volatile memories. Flash memory high-density, low power, cost effectiveness, and scalable design make it an ideal choice to fuel the explosion of multimedia products, like USB keys, MP3 players, digital cameras and solid-state disk. In ECC for Non-Volatile Memories the authors expose the basics of coding theory needed to understand the application to memories, as well as the relevant design topics, with reference to both NOR and NAND Flash architectures. A collection of software routines is also included for better understanding. The authors form a research group (now at Qimonda) which is the typical example of a fruitful collaboration between mathematicians and engineers.

Download or read book Emerging Non volatile Memory Technologies written by Wen Siang Lew and published by Springer Nature. This book was released on 2021-01-09 with total page 439 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book offers a balanced and comprehensive guide to the core principles, fundamental properties, experimental approaches, and state-of-the-art applications of two major groups of emerging non-volatile memory technologies, i.e. spintronics-based devices as well as resistive switching devices, also known as Resistive Random Access Memory (RRAM). The first section presents different types of spintronic-based devices, i.e. magnetic tunnel junction (MTJ), domain wall, and skyrmion memory devices. This section describes how their developments have led to various promising applications, such as microwave oscillators, detectors, magnetic logic, and neuromorphic engineered systems. In the second half of the book, the underlying device physics supported by different experimental observations and modelling of RRAM devices are presented with memory array level implementation. An insight into RRAM desired properties as synaptic element in neuromorphic computing platforms from material and algorithms viewpoint is also discussed with specific example in automatic sound classification framework.

Download or read book Nanoscale Electronic Devices and Their Applications written by Khurshed Ahmad Shah and published by CRC Press. This book was released on 2020-08-03 with total page 237 pages. Available in PDF, EPUB and Kindle. Book excerpt: Nanoscale Electronic Devices and Their Applications helps readers acquire a thorough understanding of the fundamentals of solids at the nanoscale level in addition to their applications including operation and properties of recent nanoscale devices. This book includes seven chapters that give an overview of electrons in solids, carbon nanotube devices and their applications, doping techniques, construction and operational details of channel-engineered MOSFETs, and spintronic devices and their applications. Structural and operational features of phase-change memory (PCM), memristor, and resistive random-access memory (ReRAM) are also discussed. In addition, some applications of these phase-change devices to logic designs have been presented. Aimed at senior undergraduate students in electrical engineering, micro-electronics engineering, physics, and device physics, this book: Covers a wide area of nanoscale devices while explaining the fundamental physics in these devices Reviews information on CNT two- and three-probe devices, spintronic devices, CNT interconnects, CNT memories, and NDR in CNT FETs Discusses spin-controlled devices and their applications, multi-material devices, and gates in addition to phase-change devices Includes rigorous mathematical derivations of the semiconductor physics Illustrates major concepts thorough discussions and various diagrams

Download or read book Information Security and Privacy written by Joseph K. Liu and published by Springer. This book was released on 2016-06-29 with total page 543 pages. Available in PDF, EPUB and Kindle. Book excerpt: The two-volume set LNCS 9722 and LNCS 9723 constitutes the refereed proceedings of the 21st Australasian Conference on Information Security and Privacy, ACISP 2016, held in Melbourne, VIC, Australia, in July 2016. The 52 revised full and 8 short papers presented together with 6 invited papers in this double volume were carefully revised and selected from 176 submissions. The papers of Part I (LNCS 9722) are organized in topical sections on National Security Infrastructure; Social Network Security; Bitcoin Security; Statistical Privacy; Network Security; Smart City Security; Digital Forensics; Lightweight Security; Secure Batch Processing; Pseudo Random/One-Way Function; Cloud Storage Security; Password/QR Code Security; and Functional Encryption and Attribute-Based Cryptosystem. Part II (LNCS 9723) comprises topics such as Signature and Key Management; Public Key and Identity-Based Encryption; Searchable Encryption; Broadcast Encryption; Mathematical Primitives; Symmetric Cipher; Public Key and Identity-Based Encryption; Biometric Security; Digital Forensics; National Security Infrastructure; Mobile Security; Network Security; and Pseudo Random/One-Way Function.

Download or read book Advances in Non volatile Memory and Storage Technology written by Yoshio Nishi and published by Woodhead Publishing. This book was released on 2019-06-15 with total page 664 pages. Available in PDF, EPUB and Kindle. Book excerpt: Advances in Nonvolatile Memory and Storage Technology, Second Edition, addresses recent developments in the non-volatile memory spectrum, from fundamental understanding, to technological aspects. The book provides up-to-date information on the current memory technologies as related by leading experts in both academia and industry. To reflect the rapidly changing field, many new chapters have been included to feature the latest in RRAM technology, STT-RAM, memristors and more. The new edition describes the emerging technologies including oxide-based ferroelectric memories, MRAM technologies, and 3D memory. Finally, to further widen the discussion on the applications space, neuromorphic computing aspects have been included. This book is a key resource for postgraduate students and academic researchers in physics, materials science and electrical engineering. In addition, it will be a valuable tool for research and development managers concerned with electronics, semiconductors, nanotechnology, solid-state memories, magnetic materials, organic materials and portable electronic devices. - Discusses emerging devices and research trends, such as neuromorphic computing and oxide-based ferroelectric memories - Provides an overview on developing nonvolatile memory and storage technologies and explores their strengths and weaknesses - Examines improvements to flash technology, charge trapping and resistive random access memory

Download or read book Multifunctional Supramolecular Organic Ferroelectrics written by Indre Urbanaviciute and published by Linköping University Electronic Press. This book was released on 2019-10-24 with total page 102 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ferroelectric materials are known and valued for their multifunctionality arising from the possibility to perturb the remnant ferroelectric polarization by electric field, temperature and/or mechanical stimuli. While inorganic ferroelectrics dominate the current market, their organic counterparts may provide highly desired properties like eco-friendliness, easy processability and flexibility, concomitantly opening unique opportunities to combine multiple functionalities into a single compound that facilitates unprecedented device concepts and designs. Supramolecular organic ferroelectrics of columnar discotic type, that are the topic of this thesis, offer additional advantages related to their strong hierarchical self-assembly and easy tunability by molecular structure modifications, allowing optimization of ferroelectric characteristics and their hybridization with, e.g., semiconductivity. This not only leads to textbook ferroelectric materials that can be used as model systems to understand the general behaviour of ferroics, but also gives rise to previously unobserved effects stemming from the interplay of different functionalities. The core-shell structure of the molecules under the scope enables multiple pathways forrational design by molecular structure modification. This was firstly pursued via peripheral tail engineering on an archetypal self-assembling ferroelectric trialkylbenzene-1,3,5-tricarboxamide (BTA). We found that by shortening the alkyl chain length all the ferroelectric properties can be continuously tuned. In particular, changing the tail from C18H37 to C6H13causes an increase in depolarization activation energy (~0.8 eV to ~1.55 eV), coercive field(~25 V/?m to ~50 V/?m) and remnant polarization (~20 mC/m2 to ~60 mC/m2). The combination of the mentioned characteristics resulted in a record polarization retention time of close to 3 months at room temperature for capacitor devices of the material having the shortest alkyl chain – BTA-C6, which at the time of writing was one of the best results for liquid-crystalline ferroelectrics. Taking one step further, we experimentally demonstrated how introduction of branched-tailsubstituents results in materials with a wide operating temperature range and a data retention time of more than 10 years in thin-film solution-processed capacitor devices already atelevated temperatures with no measurable depolarization at room temperature. The observed differences between linear- and branched-tail compounds were analysed using density functional theory (DFT) and molecular dynamics (MD) simulations. We concluded that morphological factors like improved packing quality and reduced disorder, rather than electrostatic interactions or intra/inter-columnar steric hindrance, underlay the superior properties of the branched-tailed BTAs. Synergistic effects upon blending of compounds with branched and linear sidechains were shown to further improve the materials’ characteristics. Exploiting the excellent ferroelectric performance and the well-defined nanostructure of BTAs, we experimentally determined the Preisach (hysteron) distribution of BTA and confronted it to the one obtained for the semi-crystalline P(VDF:TrFE). This allowed to elucidate how the broadening of the Preisach distribution relates to the materials’ morphology. We further connected the experimental Preisach distribution to the corresponding microscopic switching kinetics. We argue that the combination of the two underlays the macroscopic dispersive switching kinetics as commonly observed for practical ferroelectrics. These insights lead to guidelines for further advancement of ferroelectric materials both for conventional and multi-bit data storage applications. Although having strong differences in the Preisach distribution, BTA and P(VDF:TrFE) both demonstrate negative piezoelectricity – a rare anomalous phenomenon which is characteristic to two-phased materials and has never been observed in small-molecular ferroelectrics. We measured a pronounced negative piezoelectric effect in a whole family of BTAs and revealed its tunability by mesogenic tail substitution and structural disorder. While the large- and small-signal strain in highly ordered thin-film BTA capacitor devices are dominated by intrinsic contributions and originates from piezostriction, rising disorder introduces additional extrinsic factors that boost the large-signal d33 up to ?20 pm/V in short-tailed molecules. Interestingly, homologues with longer mesogenic tails show a large-signal electromechanical response that is dominated by the quadratic Maxwell strain with significant mechanical softening upon polarization switching, whereas the small-signal strain remains piezostrictive. Molecular dynamics and DFT calculations both predict a positive d33 for defect-free BTA stacks. Hence, the measured negative macroscopic d33 is attributed to the presence of structural defects that enable the dimensional effect to dominate the piezoelectric response of BTA thin films. The true multifunctionality of supramolecular discotics manifests when large semiconducting cores surrounded by field-switchable strongly polar moieties are introduced in the structure. We showed how the combination of switchable dipolar side groups and the semiconducting core of the newly synthetized C3-symmetric benzotristhiophene molecule (BTTTA) leads to an ordered columnar material showing continuous tunability from injection- to bulk-limited conductivity modulation. Both these resistive switching mechanisms may lead to the next-generation high-density non-volatile rewritable memory devices with high on/off ratios and non-destructive data readout – the element that has been desperately sought after to enablefully organic flexible electronics. Utbredd elektronisering och det högst aktuella fenomenet sakernas internet (Internet of Things) ställer höga krav på nästa generations elektroniska system. Produkterna ska vara lätta att framställa med miljövänliga metoder, låg kostnadsproduktion och skalbarhet (t. ex. tryckt elektronik), återvinningsbarhet eller biologisk nedbrytbarhet (gällande engångselektronik), mekanisk flexibilitet (formbara bärbara system), kemisk stabilitet, till och med biokompatibilitet (t. ex. implanterbara system) – dessa är bara några utmaningar som den kommande tekniken behöver övervinna. Organiska material kan åstadkomma alla dessa önskade egenskaper, samtidigt som man skapar unika möjligheter att kombinera flera funktionaliteter till en enda sammansättning som underlättar nydanande komponenter och design. Ferroelektriska material kännetecknas av pyroelektriska, piezoelektriska och dielektriska egenskaper. Denna mångsidighet möjliggör icke-flyktiga minnesenheter, temperatur- och taktila sensorer, olika transduktorer och manöverdon, som alla baseras på förändringar av den ferroelektriska restpolarisationen genom fält-, temperatur- och / eller mekaniska stimuleringar. Diskformade supramolekylära organiska ferroelektriska ämnen ger ytterligare fördelar tack vare deras modifierbara molekylstrukturer och starka hierarkiska självorganisation som staplar diskarna i kolumner. På detta sätt kan lättbearbetningsbara organiska ferroelektriska material med hög restpolarisering och extrem datalagring konstrueras molekylärt. På grund av deras väldefinierade nanostrukturer kan sådana material användas som modellsystem för att förstå det allmänna beteendet hos polykristallina ferroelektriska material. De uppvisar också ensällsynt negativ piezoelektricitet som är atypisk för små molekylära material och härrör från deras komplexa nanostruktur. Den verkliga multifunktionaliteten hos diskformade supramolekylära ämnen framträder när stora halvledande kärnor omgivna av starkt polära delar, som är växlingsbara via ett elektriskt fält, introduceras i strukturen. Oöverträffad resistiv omkoppling, inducerad av den asymmetriska laddningstransporten beroende på polarisationsriktningen med rekordhög datalagringstid, upptäcktes efter optimering av molekylstrukturen. Även en konceptuellt enklare resistiv omkopplingsmekanism bunden till en modulation av laddningsinjektionsbarriären genom gränssnittsdipolerna observerades. Båda dessa fenomen kan bidra till nästa generations icke-flyktiga överskrivningsbara minnesenheter med högdensitet, stora på av-förhållanden, och icke-destruktiv dataavläsning – vilket är kritiskt för att möjliggöra helt organisk flexibel elektronik.

Download or read book Ultra Low Voltage Nano Scale Memories written by Kiyoo Itoh and published by Springer Science & Business Media. This book was released on 2007-09-04 with total page 351 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ultra-low voltage large-scale integrated circuits (LSIs) in nano-scale technologies are needed both to meet the needs of a rapidly growing mobile cell phone market and to offset a significant increase in the power dissipation of high-end microprocessor units. The goal of this book is to provide a detailed explanation of the state-of-the-art nanometer and sub-1-V memory LSIs that are playing decisive roles in power conscious systems. Emerging problems between the device, circuit, and system levels are systematically discussed in terms of reliable high-speed operations of memory cells and peripheral logic circuits. The effectiveness of solutions at device and circuit levels is also described at length through clarifying noise components in an array, and even essential differences in ultra-low voltage operations between DRAMs and SRAMs.

Download or read book Silicon Based Unified Memory Devices and Technology written by Arup Bhattacharyya and published by CRC Press. This book was released on 2017-07-06 with total page 512 pages. Available in PDF, EPUB and Kindle. Book excerpt: The primary focus of this book is on basic device concepts, memory cell design, and process technology integration. The first part provides in-depth coverage of conventional nonvolatile memory devices, stack structures from device physics, historical perspectives, and identifies limitations of conventional devices. The second part reviews advances made in reducing and/or eliminating existing limitations of NVM device parameters from the standpoint of device scalability, application extendibility, and reliability. The final part proposes multiple options of silicon based unified (nonvolatile) memory cell concepts and stack designs (SUMs). The book provides Industrial R&D personnel with the knowledge to drive the future memory technology with the established silicon FET-based establishments of their own. It explores application potentials of memory in areas such as robotics, avionics, health-industry, space vehicles, space sciences, bio-imaging, genetics etc.