Download or read book Advanced Microstructured Semiconductor Neutron Detectors written by Steven Lawrence Bellinger and published by . This book was released on 2011 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The microstructured semiconductor neutron detector (MSND) was investigated and previous designs were improved and optimized. In the present work, fabrication techniques have been refined and improved to produce three-dimensional microstructured semiconductor neutron detectors with reduced leakage current, reduced capacitance, highly anisotropic deep etched trenches, and increased signal-to-noise ratios. As a result of these improvements, new MSND detection systems function with better gamma-ray discrimination and are easier to fabricate than previous designs. In addition to the microstructured diode fabrication improvement, a superior batch processing backfill-method for 6LiF neutron reactive material, resulting in a nearly-solid backfill, was developed. This method incorporates a LiF nano-sizing process and a centrifugal batch process for backfilling the nanoparticle LiF material. To better transition the MSND detector to commercialization, the fabrication process was studied and enhanced to better facilitate low cost and batch process MSND production. The research and development of the MSND technology described in this work includes fabrication of variant microstructured diode designs, which have been simulated through MSND physics models to predict performance and neutron detection efficiency, and testing the operational performance of these designs in regards to neutron detection efficiency, gamma-ray rejection, and silicon fabrication methodology. The highest thermal-neutron detection efficiency reported to date for a solid-state semiconductor detector is presented in this work. MSNDs show excellent neutron to gamma-ray (n/[gamma]) rejection ratios, which are on the order of 106, without significant loss in thermal-neutron detection efficiency. Individually, the MSND is intrinsically highly sensitive to thermal neutrons, but not extrinsically sensitive because of their small size. To improve upon this, individual MSNDs were tiled together into a 6x6-element array on a single silicon chip. Individual elements of the array were tested for thermal-neutron detection efficiency and for the n/[gamma] reject ratio. Overall, because of the inadequacies and costs of other neutron detection systems, the MSND is the premier technology for many neutron detection applications.

Download or read book Dual side Etched Microstructured Semiconductor Neutron Detectors written by Ryan G. Fronk and published by . This book was released on 2017 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Interest in high-efficiency replacements for thin-film-coated thermal neutron detectors led to the development of single-sided microstructured semiconductor neutron detectors (MSNDs). MSNDs are designed with micro-sized trench structures that are etched into a vertically-oriented pvn-junction diode, and backfilled with a neutron converting material, such as 6LiF. Neutrons absorbed by the converting material produce a pair of charged-particle reaction products that can be measured by the diode substrate. MSNDs have higher neutron-absorption and reaction-product counting efficiencies than their thin-film-coated counterparts, resulting in up to a 10x increase in intrinsic thermal neutron detection efficiency. The detection efficiency for a single-sided MSND is reduced by neutron streaming paths between the conversion-material filled regions that consequently allow neutrons to pass undetected through the detector. Previously, the highest reported intrinsic thermal neutron detection efficiency for a single MSND was approximately 30%. Methods for double-stacking and aligning MSNDs to reduce neutron streaming produced devices with an intrinsic thermal neutron detection efficiency of 42%. Presented here is a new type of MSND that features a complementary second set of trenches that are etched into the back-side of the detector substrate. These dual-sided microstructured semiconductor neutron detectors (DS-MSNDs) have the ability to absorb and detect neutrons that stream through the front-side, effectively doubling the detection efficiency of a single-sided device. DS-MSND sensors are theoretically capable of achieving greater than 80% intrinsic thermal neutron detection efficiency for a 1-mm thick device. Prototype DS-MSNDs with diffused pvp-junction operated at 0-V applied bias have achieved 53.54±0.61%, exceeding that of the single-sided MSNDs and double-stacked MSNDs to represent a new record for detection efficiency for such solid-state devices.

Download or read book Neutron Detectors for Scattering Applications written by Yacouba Diawara and published by Springer Nature. This book was released on 2023-08-04 with total page 257 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book covers the most common neutron detectors used in neutron scattering facilities and all of those in use at Oak Ridge National Lab. It starts describing the facilities, instruments and the critical detector parameters needed by various instruments. Then the key components of the 3He-based linear position-sensitive detectors as well as on their electronics, which require particular attention to signal processing and noise reduction, are introduced. One chapter is dedicated to the 3He alternatives where scintillators play a critical role. It also covers emerging neutron detection technologies including semiconductors, vacuum-based devices and their associated readouts, which will be required in the future for high rate and high-resolution neutron detectors. The authors explain the logic behind the choice of materials as well as the various constraints that neutron detectors must respect to be useful. Some of these constraints, such as efficiency and gamma-ray sensitivity are common to all neutron counters while others, like timing resolution, dynamic range, and peak counting rate, depend on the applications. The book guides experts, the nuclear science community, and young scholars through the physical processes and the required electronics in a way that is accessible for those not professionally involved in designing detector’s components and electronic circuits.

Download or read book High Energy Neutron Detector written by Clyde Edward Wiegand and published by . This book was released on 1949 with total page 8 pages. Available in PDF, EPUB and Kindle. Book excerpt: It is the purpose of this paper to describe a neutron detector suitable for monitoring a flux of neutrons whose energy is greater than about 50 Mev. Detection of the neutrons is accomplished by their ability to induce fission in heavy elements. Kelly and Wiegand studied the neutron fission of Bi, Pb, Ti, Hg, Au, and Pt at various neutron energies and the presently described counter is an application of this work.

Download or read book Semiconductor Neutron Detectors written by F. Wald and published by . This book was released on 1973 with total page 36 pages. Available in PDF, EPUB and Kindle. Book excerpt: The goal of this program was the crystal growth of red alpha-rhombohedral boron for use as a semiconductor neutron detector. Red boron was prepared as microscopic crystals by a variety of techniques. Crystals of red boron 0.1 mm long were prepared by the chemical vapor deposition (CVD) of BBr3 at 1170C. Microscopic crystals of red boron could also be prepared by the vapor-liquid-solid and traveling solvent method variations of CVD as well as by precipitation from copper-gold solutions. Solid solutions of copper and gold in beta-rhombohedral boron have been grown by the traveling heater method from a copper-gold alloy at temperatures of 1000 to 1200C. The electrical and optical properties of this material appear to be dominated by the same kind of trapping mechanism that controls the properties of high purity beta-boron. The only distinguishing feature of this material seems to be that both the trap concentration and the free carrier concentration are quite high. The free carrier mobilities of this material are low, which precludes its use for semiconductor radiation detection. (Author).

Download or read book Semiconductor Radiation Detectors written by Gerhard Lutz and published by Springer Science & Business Media. This book was released on 2001-11-01 with total page 376 pages. Available in PDF, EPUB and Kindle. Book excerpt: Starting from basic principles, this book describes the rapidly growing field of modern semiconductor detectors used for energy and position measurement radiation. The author, whose own contributions to these developments have been significant, explains the working principles of semiconductor radiation detectors in an intuitive way. Broad coverage is also given to electronic signal readout and to the subject of radiation damage.

Download or read book Semiconductor Radiation Detectors written by Alan Owens and published by CRC Press. This book was released on 2019-05-31 with total page 494 pages. Available in PDF, EPUB and Kindle. Book excerpt: Choice Recommended Title, July 2020 Bringing together material scattered across many disciplines, Semiconductor Radiation Detectors provides readers with a consolidated source of information on the properties of a wide range of semiconductors; their growth, characterization and the fabrication of radiation sensors with emphasis on the X- and gamma-ray regimes. It explores the promise and limitations of both the traditional and new generation of semiconductors and discusses where the future in semiconductor development and radiation detection may lie. The purpose of this book is two-fold; firstly to serve as a text book for those new to the field of semiconductors and radiation detection and measurement, and secondly as a reference book for established researchers working in related disciplines within physics and engineering. Features: The only comprehensive book covering this topic Fully up-to-date with new developments in the field Provides a wide-ranging source of further reference material

Download or read book Layered Semiconductor Neutron Detectors written by and published by . This book was released on 2013 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Room temperature operating solid state hand held neutron detectors integrate one or more relatively thin layers of a high neutron interaction cross-section element or materials with semiconductor detectors. The high neutron interaction cross-section element (e.g., Gd, B or Li) or materials comprising at least one high neutron interaction cross-section element can be in the form of unstructured layers or micro- or nano-structured arrays. Such architecture provides high efficiency neutron detector devices by capturing substantially more carriers produced from high energy .alpha.-particles or .gamma.-photons generated by neutron interaction.

Download or read book Semiconductor Neutron Detectors written by Ian Suttie and published by . This book was released on 1967* with total page 154 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Landgoederen en wandelterreinen in Nederland written by and published by . This book was released on 1946 with total page 176 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Semiconductor Detector Systems written by Helmuth Spieler and published by OUP Oxford. This book was released on 2005-08-25 with total page 513 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor sensors patterned at the micron scale combined with custom-designed integrated circuits have revolutionized semiconductor radiation detector systems. Designs covering many square meters with millions of signal channels are now commonplace in high-energy physics and the technology is finding its way into many other fields, ranging from astrophysics to experiments at synchrotron light sources and medical imaging. This book is the first to present a comprehensive discussion of the many facets of highly integrated semiconductor detector systems, covering sensors, signal processing, transistors and circuits, low-noise electronics, and radiation effects. The diversity of design approaches is illustrated in a chapter describing systems in high-energy physics, astronomy, and astrophysics. Finally a chapter "Why things don't work" discusses common pitfalls. Profusely illustrated, this book provides a unique reference in a key area of modern science.

Download or read book Radiation Detection written by Douglas McGregor and published by CRC Press. This book was released on 2020-08-19 with total page 1851 pages. Available in PDF, EPUB and Kindle. Book excerpt: Radiation Detection: Concepts, Methods, and Devices provides a modern overview of radiation detection devices and radiation measurement methods. The book topics have been selected on the basis of the authors’ many years of experience designing radiation detectors and teaching radiation detection and measurement in a classroom environment. This book is designed to give the reader more than a glimpse at radiation detection devices and a few packaged equations. Rather it seeks to provide an understanding that allows the reader to choose the appropriate detection technology for a particular application, to design detectors, and to competently perform radiation measurements. The authors describe assumptions used to derive frequently encountered equations used in radiation detection and measurement, thereby providing insight when and when not to apply the many approaches used in different aspects of radiation detection. Detailed in many of the chapters are specific aspects of radiation detectors, including comprehensive reviews of the historical development and current state of each topic. Such a review necessarily entails citations to many of the important discoveries, providing a resource to find quickly additional and more detailed information. This book generally has five main themes: Physics and Electrostatics needed to Design Radiation Detectors Properties and Design of Common Radiation Detectors Description and Modeling of the Different Types of Radiation Detectors Radiation Measurements and Subsequent Analysis Introductory Electronics Used for Radiation Detectors Topics covered include atomic and nuclear physics, radiation interactions, sources of radiation, and background radiation. Detector operation is addressed with chapters on radiation counting statistics, radiation source and detector effects, electrostatics for signal generation, solid-state and semiconductor physics, background radiations, and radiation counting and spectroscopy. Detectors for gamma-rays, charged-particles, and neutrons are detailed in chapters on gas-filled, scintillator, semiconductor, thermoluminescence and optically stimulated luminescence, photographic film, and a variety of other detection devices.

Download or read book Elements of Slow Neutron Scattering written by J. M. Carpenter and published by Cambridge University Press. This book was released on 2015-09-24 with total page 539 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides a comprehensive and up-to-date introduction to the fundamental theory and applications of slow-neutron scattering.

Download or read book Simulation and Validation of Charge Carrier Drift in Pixelated Microstructured Semiconductor Neutron Detectors written by Diego Laramore and published by . This book was released on 2020 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: A semiconductor neutron imaging device is proposed (X-MSND) based on high efficiency, Micro-structured Semiconductor Neutron Detector (MSNDs) bump bonded onto a Timepix pixelated readout chip. The device serves as a combined neutron and photon imager with a 256x256 pixel array, using per-pixel time-over-threshold (ToT) energy deposition. The X-MSND design has produced thermal neutron detection efficiency of 14%, significantly greater than the theoretical maximum of less than 5% for planar devices. Simulated pixel clusters showed similar qualitative characteristics as planar neutron sensitive Timepix hybrid detectors. A workflow for simulating the semiconductor physics, ionization by radiation, and charge carrier transport for micro-structured sensors in general has been devised and described in this work. The simulation workflow began by steady state initial conditions of the X-MSND PIN diode sensor at full bias using COMSOL Multiphysics. This simulation step served the combined purpose of providing the necessary electric field solutions used in charge transport, and provided necessary design and operating parameters for device fabrication. Radiation transport code Geant4 was used to simulate the radiation detection characteristics of the sensor: thermal neutron detection efficiency, energy deposition per detection event, and the location of the ionized charge cloud per interaction are all calculated at this step. Dassault SolidWorks was used to generate Computer-Assisted Drafting (CAD) models of the full micro-structured device geometry, which was then converted and imported into a format that can be interpreted by Geant4 for the radiation transport. Geant4 can then interface directly with a modified version of Allpix^2 to perform charge carrier drift over the entire X-MSND geometry. Fabricated X-MSND devices were tested and evaluated at Kansas State University (KSU), and were found capable of producing high quality radiographs with both X-rays and neutrons. The fabrication of functioning X-MSND/Timepix assemblies was a collaborative effort among several research groups at KSU, domestic and international industrial partners, and international research groups. Fabrication of the X-MSND sensors was performed largely by Radiation Detection Technologies, Inc., with parametric design support from the Radiological System Integration Laboratory (RSIL) and Radiological Engineering Analysis Laboratory (REAL). The processes used in the production of X-MSND sensors are conventional micro-electro-mechanical system (MEMS) photolithography techniques; spin-on deposition and ultraviolet development of photoresist, metal lift-off, and wet etching of silicon are all used over the course of fabrication, and are described in detail. The Electronics Design Laboratory (EDL) of Kansas State University assisted in the design of custom printed circuit boards to which the X-MSND/Timepix assemblies are mounted. External to facilities located at KSU, various industrial manufacturing partners who specialize in Very Large Scale Integration (VLSI) and micro-fabrication assembly processes were also contracted to perform the specialized assembly processes required in assembling the full X-MSND/Timepix systems.

Download or read book Neutron Detectors written by International Atomic Energy Agency and published by . This book was released on 1966 with total page 436 pages. Available in PDF, EPUB and Kindle. Book excerpt: A child speculates about sleeping next to various animals in various places other than one's own, and most desirable, warm bed.

Download or read book The Application of Semiconductor Radiation Detectors to the Observation of Fast Neutrons written by E. L. Zimmerman and published by . This book was released on 1962 with total page 66 pages. Available in PDF, EPUB and Kindle. Book excerpt: Several methods of utilizing a semiconductor radiation detector for neutron observations have been investigated. Techniques for the application of neutron-sensitive materials to detector surfaces have been developed and the resulting coated detectors have been evaluated as both thermal and threshold detectors. A "good geometry" proton-recoil spectrometer utilizing a semiconductor detector has been built and used to observe fast neutrons. An analytical study of this device resulted in a method which can accurately predict its response as a function of incident neutron energy., hydrogenous radiator thickness, and systm geometry. Good qualitative agreement was observed between the predicted and experimental response

Download or read book Measurement of Nuclear Radiation with Semiconductor Detectors written by D. N. Poenaru and published by . This book was released on 1969 with total page 414 pages. Available in PDF, EPUB and Kindle. Book excerpt: CONTENTS - MAIN NOTATIONS - CONTENTS - CHAPTER I. - INTERACTION OF THE NUCLEAR RADIATION WITH MATTER - 1.1. Interaction of heavy charged particles with matter - 1.2. Passage of electrons through matter - 1.3. Interaction processes of gamma and X-rays - 1.4. Interaction processes of neutrons - 1.5. Conclusions - CHAPTER II. - FUNDAMENTAL PROCESSES IN SEMICONDUCTORS AND METALS - 2.1. Schrödinger equation. The particle inside the potential well - 2.2. The hydrogen atom - 2.3. Theory of the periodic system of elements - 2.4. Electrons in crystals - 2.5. Effective mass - 2.6. Energy bands - 2.7. Statistical distributions - 2.8. Equilibrium density of charge carriers in semiconductors - 2.9. Transport phenomena - 2.10. Recombination phenomena - 2.11. P-N junction - 2.12. Phenomena at the metal-semiconductor interface - CHAPTER III. - WORKING PRINCIPLES OF NUCLEAR RADIATION SEMICONDUCTOR DETECTORS - 3.1. Charge-carrier injection. The mean energy for electron-hole pair production - 3.2. The drift of charge-carriers in the electric field. The shape of the current and voltage pulse given by the collection of a single pair. - 3.3. Collection time of electron-hole pairs in a P-N abrupt junction - 3.4. Collection time of electron-hole pairs in coaxial Ge (Li) detectors - 3.5. Influence of SD equivalent circuit elements on the voltage and current pulse shape - 3.6. Collection of charge-carriers in real devices - 3.7. Collection of electric charges by diffusion from outside the depletion layer - 3.8. Detector noise - 3.9. Detector energy resolution - CHAPTER IV - CHARACTERISTICS OF SEMICONDUCTOR DETECTORS - 4.1. Electrical characteristics - 4.2. Detection characteristics - 4.3. Effects of temperature, magnetic field and light on the semiconductor detector characteristics - 4.4. Detector sensitivity to neutrons and gamma-rays - 4.5. Effects of radiation damage on detector characteristics - CHAPTER V - SEMICONDUCTOR DETECTOR TYPES - 5.1. Methods for obtaining high electric fields in semiconductors - 5.2. Homogeneous semiconductor detectors - 5.3. Diffused N-P junction detectors - 5.4. Surface-barrier detectors - 5.5. Guard-ring detectors - 5.6. Totally depleted detectors - 5.7. Neutron detectors - 5.8. Special detectors - 5.9. NIP detectors - CHAPTER VI - AMPLIFICATION OF SEMICONDUCTOR DETECTOR ELECTRIC PULSES - 6.1. Electric charge to voltage pulse conversion - 6.2. Charge-sensitive-preamplifier-noise specification and measurement - 6.S. Amplifier-noise sources - 6.4. Effects of amplifier shaping circuits on noise spectra - 6.5. RC-RC amplifier signal to noise ratio - CHAPTER VII - SEMICONDUCTOR DETECTOR ASSOCIATED ELECTRONICS - 7.1. Spectrometers with semiconductor detectors - 7.2. Charge sensitive preamplifiers - 7.3. Main amplifier - 7.4. Amplitude analyser and expander - 7.5. High amplitude stability pulse generator - 7.6. Transistorized apparatus - APPENDIX A I: Basic properties of Si and Ge - APPENDIX A II: Main natural and artificial alpha sources - APPENDIX A III: Analysis of some circuits used in charge sensitive preamplifiers - REFERENCES -