Download or read book Semi Insulating III V Materials written by REES and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 366 pages. Available in PDF, EPUB and Kindle. Book excerpt: The study of deep levels in semiconductors has seen considerable growth in recent years. Many new techniques have become available for investigating both the electronic properties of deep levels and the chemical nature of the defects from which they arise. This increasing interest has been stimulated by the importance of the subject to device technology, in particular those microwave and opto-electronic devices made from GaAs, InP and their alloys. While previous conferences have covered specialist areas of deep level technology, the meeting described here was arranged to draw together workers from these separate fields of study. The following papers reflect the breadth of interests represented at the conference. For the sake of uniformity we have chosen the English alternative where an American expression has been used. We have also sought to improve grammar, sometimes without the approval of the author in the interests of rapid publication. The Editor wishes to thank the referees for their ready advice at all stages, Paul Jay who helped with many of the editorial duties and Muriel Howes and Lorraine Jones for rapid and accurate typing.
Download or read book Semi insulating III V Materials written by and published by . This book was released on 1990 with total page 486 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book III V Semiconductor Materials and Devices written by R.J. Malik and published by Elsevier. This book was released on 2012-12-02 with total page 740 pages. Available in PDF, EPUB and Kindle. Book excerpt: The main emphasis of this volume is on III-V semiconductor epitaxial and bulk crystal growth techniques. Chapters are also included on material characterization and ion implantation. In order to put these growth techniques into perspective a thorough review of the physics and technology of III-V devices is presented. This is the first book of its kind to discuss the theory of the various crystal growth techniques in relation to their advantages and limitations for use in III-V semiconductor devices.
Download or read book Fundamentals of III V Semiconductor MOSFETs written by Serge Oktyabrsky and published by Springer Science & Business Media. This book was released on 2010-03-16 with total page 451 pages. Available in PDF, EPUB and Kindle. Book excerpt: Fundamentals of III-V Semiconductor MOSFETs presents the fundamentals and current status of research of compound semiconductor metal-oxide-semiconductor field-effect transistors (MOSFETs) that are envisioned as a future replacement of silicon in digital circuits. The material covered begins with a review of specific properties of III-V semiconductors and available technologies making them attractive to MOSFET technology, such as band-engineered heterostructures, effect of strain, nanoscale control during epitaxial growth. Due to the lack of thermodynamically stable native oxides on III-V's (such as SiO2 on Si), high-k oxides are the natural choice of dielectrics for III-V MOSFETs. The key challenge of the III-V MOSFET technology is a high-quality, thermodynamically stable gate dielectric that passivates the interface states, similar to SiO2 on Si. Several chapters give a detailed description of materials science and electronic behavior of various dielectrics and related interfaces, as well as physics of fabricated devices and MOSFET fabrication technologies. Topics also include recent progress and understanding of various materials systems; specific issues for electrical measurement of gate stacks and FETs with low and wide bandgap channels and high interface trap density; possible paths of integration of different semiconductor materials on Si platform.
Download or read book Fundamentals written by D. T. J. Hurle and published by Elsevier. This book was released on 2013-10-22 with total page 697 pages. Available in PDF, EPUB and Kindle. Book excerpt: Volume I - Fundamentals addresses the underlying scientific principles relevant to all the techniques of crystal growth. Following a Foreword by Professor Sir Charles Frank and an historical introduction, the first part contains eight chapters devoted to thermodynamic, kinetic and crystallographic aspects including computer simulation by molecular dynamics and Monte Carlo methods. The second part, comprising a further seven chapters, is devoted to bulk transport effects and the influence of transport-limited growth on the stability of both isolated growth forms (such as the dendrite) and arrays, and on the cooperative effects which lead to pattern formation. All the presentations are superbly authoritative.
Download or read book Bulk Crystal Growth of Electronic Optical and Optoelectronic Materials written by Peter Capper and published by John Wiley & Sons. This book was released on 2005-10-31 with total page 574 pages. Available in PDF, EPUB and Kindle. Book excerpt: A valuable, timely book for the crystal growth community, edited by one of the most respected members in the field. Contents cover all the important materials from silicon through the III-V and II-IV compounds to oxides, nitrides, fluorides, carbides and diamonds International group of contributors from academia and industry provide a balanced treatment Includes global interest with particular relevance to: USA, Canada, UK, France, Germany, Netherlands, Belgium, Italy, Spain, Switzerland, Japan, Korea, Taiwan, China, Australia and South Africa
Download or read book Compound and Josephson High Speed Devices written by Takahiko Misugi and published by Springer Science & Business Media. This book was released on 2013-06-29 with total page 311 pages. Available in PDF, EPUB and Kindle. Book excerpt: In recent years, III-V devices, integrated circuits, and superconducting integrated circuits have emerged as leading contenders for high-frequency and ultrahigh speed applications. GaAs MESFETs have been applied in microwave systems as low-noise and high-power amplifiers since the early 1970s, replacing silicon devices. The heterojunction high-electron-mobility transistor (HEMT), invented in 1980, has become a key component for satellite broadcasting receiver systems, serving as the ultra-low-noise device at 12 GHz. Furthermore, the heterojunction bipolar transistor (HBT) has been considered as having the highest switching speed and cutoff frequency in the semiconductor device field. Initially most of these devices were used for analog high-frequency applications, but there is also a strong need to develop high-speed III-V digital devices for computer, telecom munication, and instrumentation systems, to replace silicon high-speed devices, because of the switching-speed and power-dissipation limitations of silicon. The potential high speed and low power dissipation of digital integrated circuits using GaAs MESFET, HEMT, HBT, and superconducting Josephson junction devices has evoked tremendous competition in the race to develop such technology. A technology review shows that Japanese research institutes and companies have taken the lead in the development of these devices, and some integrated circuits have already been applied to supercomputers in Japan. The activities of Japanese research institutes and companies in the III-V and superconducting device fields have been superior for three reasons. First, bulk crystal growth, epitaxial growth, process, and design technology were developed at the same time.
Download or read book Microscopy of Semiconducting Materials 1987 Proceedings of the Institute of Physics Conference Oxford University April 1987 written by A.G. Cullis and published by CRC Press. This book was released on 2021-02-01 with total page 836 pages. Available in PDF, EPUB and Kindle. Book excerpt: The various forms of microscopy and related microanalytical techniques are making unique contributions to semiconductor research and development that underpin many important areas of microelectronics technology. Microscopy of Semiconducting Materials 1987 highlights the progress that is being made in semiconductor microscopy, primarily in electron probe methods as well as in light optical and ion scattering techniques. The book covers the state of the art, with sections on high resolution microscopy, epitaxial layers, quantum wells and superlattices, bulk gallium arsenide and other compounds, properties of dislocations, device silicon and dielectric structures, silicides and contacts, device testing, x-ray techniques, microanalysis, and advanced scanning microscopy techniques. Contributed by numerous international experts, this volume will be an indispensable guide to recent developments in semiconductor microscopy for all those who work in the field of semiconducting materials and research development.
Download or read book Springer Handbook of Electronic and Photonic Materials written by Safa Kasap and published by Springer Science & Business Media. This book was released on 2007-08-01 with total page 1409 pages. Available in PDF, EPUB and Kindle. Book excerpt: Contributions from well known and respected researchers throughout the world Thorough coverage of electronic and opto-electronic materials that today's electrical engineers, material scientists and physicists need Interdisciplinary approach encompasses research in disciplines such as materials science, electrical engineering, chemical engineering, mechanical engineering, physics and chemistry
Download or read book Scientific Bulletin written by and published by . This book was released on 1987 with total page 534 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book ONR Far East Scientific Bulletin written by and published by . This book was released on 1987 with total page 536 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Point and Extended Defects in Semiconductors written by Giorgio Benedek and published by Springer Science & Business Media. This book was released on 2013-06-29 with total page 286 pages. Available in PDF, EPUB and Kindle. Book excerpt: The systematic study of defects in semiconductors began in the early fifties. FrQm that time on many questions about the defect structure and properties have been an swered, but many others are still a matter of investigation and discussion. Moreover, during these years new problems arose in connection with the identification and char acterization of defects, their role in determining transport and optical properties of semiconductor materials and devices, as well as from the technology of the ever in creasing scale of integration. This book presents to the reader a view into both basic concepts of defect physics and recent developments of high resolution experimental techniques. The book does not aim at an exhaustive presentation of modern defect physics; rather it gathers a number of topics which represent the present-time research in this field. The volume collects the contributions to the Advanced Research Workshop "Point, Extended and Surface Defects in Semiconductors" held at the Ettore Majo rana Centre at Erice (Italy) from 2 to 7 November 1988, in the framework of the International School of Materials Science and Technology. The workshop has brought together scientists from thirteen countries. Most participants are currently working on defect problems in either silicon submicron technology or in quantum wells and superlattices, where point defects, dislocations, interfaces and surfaces are closely packed together.
Download or read book Compound Semiconductor Bulk Materials And Characterizations written by Osamu Oda and published by World Scientific. This book was released on 2007-04-18 with total page 556 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is concerned with compound semiconductor bulk materials and has been written for students, researchers and engineers in material science and device fabrication. It offers them the elementary and intermediate knowledge of compound semiconductor bulk materials necessary for entering this field. In the first part, the book describes the physical properties, crystal growth technologies, principles of crystal growth, various defects in crystals, characterization techniques and applications. In the second and the third parts, the book reviews various compound semiconductor materials, including important industrial materials and the results of recent research.
Download or read book Concise Encyclopedia of Semiconducting Materials Related Technologies written by S. Mahajan and published by Elsevier. This book was released on 2013-10-22 with total page 607 pages. Available in PDF, EPUB and Kindle. Book excerpt: The development of electronic materials and particularly advances in semiconductor technology have played a central role in the electronics revolution by allowing the production of increasingly cheap and powerful computing equipment and advanced telecommunications devices. This Concise Encyclopedia, which incorporates relevant articles from the acclaimed Encyclopedia of Materials Science and Engineering as well as newly commissioned articles, emphasizes the materials aspects of semiconductors and the technologies important in solid-state electronics. Growth of bulk crystals and epitaxial layers are discussed in the volume and coverage is included of defects and their effects on device behavior. Metallization and passivation issues are also covered. Over 100 alphabetically arranged articles, written by world experts in the field, are each intended to serve as the first source of information on a particular aspect of electronic materials. The volume is extensively illustrated with photographs, diagrams and tables. A bibliography is provided at the end of each article to guide the reader to recent literature. A comprehensive system of cross-references, a three-level subject index and an alphabetical list of articles are included to aid readers in the abstraction of information.
Download or read book Analytical Techniques for the Characterization of Compound Semiconductors written by G. Bastard and published by Elsevier. This book was released on 1991-07-26 with total page 554 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume is a collection of 96 papers presented at the above Conference. The scope of the work includes optical and electrical methods as well as techniques for structural and compositional characterization. The contributed papers report on topics such as X-ray diffraction, TEM, depth profiling, photoluminescence, Raman scattering and various electrical methods. Of particular interest are combinations of different techniques providing complementary information. The compound semiconductors reviewed belong mainly to the III-V and III-VI families. The papers in this volume will provide a useful reference on the implications of new technologies in the characterization of compound semiconductors.
Download or read book Materials For Photonic Devices written by A D'andrea and published by World Scientific. This book was released on 1991-11-15 with total page 470 pages. Available in PDF, EPUB and Kindle. Book excerpt: The post-industrial societies' demand for more information processing and communication is a challenge to modern technology.This workshop is the first forum in Italy fully devoted to the advanced materials for opto-electronic and photonic device applications.The volume contains selected papers presented at the workshop and provide an updated overview by leading Italian public and private research groups on the state-of-the-art developments in crystal growth, tailoring and characterization of a large class of materials, namely semiconductors, glasses, polymers and organic molecules.Internationally recognized scientists on materials science have contributed to the workshop and their contributions have been reported in this volume.
Download or read book Semiconductors and Semimetals written by and published by Academic Press. This book was released on 1988-12-24 with total page 405 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductors and Semimetals
