Download or read book RF Power Amplifier and Oscillator Design for Reliability and Variability written by Shuyu Chen and published by . This book was released on 2013 with total page 116 pages. Available in PDF, EPUB and Kindle. Book excerpt: CMOS RF circuit design has been an ever-lasting research field. It gained so much attention since RF circuits have high mobility and wide band efficiency, while CMOS technology has the advantage of low cost and better capability of integration. At the same time, IC circuits never stopped scaling down for the recent many decades. Reliability issues with RF circuits have become more and more severe with device scaling down: reliability effects such as gate oxide break down, hot carrier injection, negative bias temperature instability, have been amplified as the device size shrinks. Process variability issues also become more predominant as the feature size decreases. With these insights provided, reliability and variability evaluations on typical RF circuits and possible compensation techniques are highly desirable. In this work, a class E power amplifier is designed and laid out using TSMC 0.18 [micrometer] RF technology and the chip was fabricated. Oxide stress and hot electron tests were carried out at elevated supply voltage, fresh measurement results were compared with different stress conditions after 10 hours. Test results matched very well with mixed mode circuit simulations, proved that hot carrier effects degrades PA performances like output power, power efficiency, etc. Self- heating effects were examined on a class AB power amplifier since PA has high power operations. Device temperature simulation was done both in DC and mixed mode level. Different gate biasing techniques were analyzed and their abilities to compensate output power were compared. A simple gate biasing circuit turned out to be efficient to compensate self-heating effects under different localized heating situations. Process variation was studied on a classic Colpitts oscillator using Monte-Carlo simulation. Phase noise was examined since it is a key parameter in oscillator. Phase noise was modeled using analytical equations and supported by good match between MATLAB results and ADS simulation. An adaptive body biasing circuit was proposed to eliminate process variation. Results from probability density function simulation demonstrated its capability to relieve process variation on phase noise. Standard deviation of phase noise with adaptive body bias is much less than the one without compensation. Finally, a robust, adaptive design technique using PLL as on-chip sensor to reduce Process, Voltage, Temperature (P.V.T.) variations and other aging effects on RF PA was evaluated. The frequency and phase of ring oscillator need to be adjusted to follow the frequency and phase of input in PLL no matter how the working condition varies. As a result, the control signal of ring oscillator has to fluctuate according to the working condition, reflecting the P.V.T changes. RF circuits suffer from similar P.V.T. variations. The control signal of PLL is introduced to RF circuits and converted to the adaptive tuning voltage for substrate bias. Simulation results illustrate that the PA output power under different variations is more flat than the one with no compensation. Analytical equations show good support to what has been observed.

Download or read book CMOS RF Circuit Design for Reliability and Variability written by Jiann-Shiun Yuan and published by Springer. This book was released on 2016-04-13 with total page 108 pages. Available in PDF, EPUB and Kindle. Book excerpt: The subject of this book is CMOS RF circuit design for reliability. The device reliability and process variation issues on RF transmitter and receiver circuits will be particular interest to the readers in the field of semiconductor devices and circuits. This proposed book is unique to explore typical reliability issues in the device and technology level and then to examine their impact on RF wireless transceiver circuit performance. Analytical equations, experimental data, device and circuit simulation results will be given for clear explanation. The main benefit the reader derive from this book will be clear understanding on how device reliability issues affects the RF circuit performance subjected to operation aging and process variations.

Download or read book Study of Design for Reliability of RF and Analog Circuits written by Hongxia Tang and published by . This book was released on 2012 with total page 111 pages. Available in PDF, EPUB and Kindle. Book excerpt: Due to continued device dimensions scaling, CMOS transistors in the nanometer regime have resulted in major reliability and variability challenges. Reliability issues such as channel hot electron injection, gate dielectric breakdown, and negative bias temperature instability (NBTI) need to be accounted for in the design of robust RF circuits. In addition, process variations in the nanoscale CMOS transistors are another major concern in today's circuits design. An adaptive gate-source biasing scheme to improve the RF circuit reliability is presented in this work. The adaptive method automatically adjusts the gate-source voltage to compensate the reduction in drain current subjected to various device reliability mechanisms. A class-AB RF power amplifier shows that the use of a source resistance makes the power-added efficiency robust against threshold voltage and mobility variations, while the use of a source inductance is more reliable for the input third-order intercept point. A RF power amplifier with adaptive gate biasing is proposed to improve the circuit device reliability degradation and process variation. The performances of the power amplifier with adaptive gate biasing are compared with those of the power amplifier without adaptive gate biasing technique. The adaptive gate biasing makes the power amplifier more resilient to process variations as well as the device aging such as mobility and threshold voltage degradation. Injection locked voltage-controlled oscillators (VCOs) have been examined. The VCOs are implemented using TSMC 0.18 [micrometer] mixed-signal CMOS technology. The injection locked oscillators have improved phase noise performance than free running oscillators. A differential Clapp-VCO has been designed and fabricated for the evaluation of hot electron reliability. The differential Clapp-VCO is formed using cross-coupled nMOS transistors, on-chip transformers/inductors, and voltage-controlled capacitors. The experimental data demonstrate that the hot carrier damage increases the oscillation frequency and degrades the phase noise of Clapp-VCO. A p-channel transistor only VCO has been designed for low phase noise. The simulation results show that the phase noise degrades after NBTI stress at elevated temperature. This is due to increased interface states after NBTI stress. The process variability has also been evaluated.

Download or read book RF and Microwave Power Amplifier Design written by Andrei Grebennikov and published by McGraw Hill Professional. This book was released on 2004-09-15 with total page 433 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is a rigorous tutorial on radio frequency and microwave power amplifier design, teaching the circuit design techniques that form the microelectronic backbones of modern wireless communications systems. Suitable for self-study, corporate training, or Senior/Graduate classroom use, the book combines analytical calculations and computer-aided design techniques to arm electronic engineers with every possible method to improve their designs and shorten their design time cycles.

Download or read book Reliable RF Power Amplifier Design Based on a Partitioning Design Approach written by Rui Ma and published by kassel university press GmbH. This book was released on 2010 with total page 144 pages. Available in PDF, EPUB and Kindle. Book excerpt: Front cover -- Titelseite -- Impressum -- Acknowledgments -- Contents -- List of Abbreviations and Acronyms -- Abstract -- Zusammenfassung -- Chapter 1 Introduction -- 1.1 Principle of the Partitioning Design Approach -- 1.2 Dissertation Organization -- Chapter 2 Investigation of Planar-Interconnection -- 2.1 Active Chip Device Interconnection -- 2.1.1 Die Attach -- 2.1.2 Wire Bonding Pad-To-Microstrip -- 2.2 Microstrip-to-Microstrip Interconnection -- 2.2.1 Soldering -- 2.2.2 Multi-Wire Bonding -- 2.2.3 Copper Ribbon -- 2.2.4 Silver- Painting -- Chapter 3 Analysis and Modeling of Passive SMD Components -- 3.1 SMD Resistor -- 3.2 SMD Capacitor -- 3.3 SMD Inductor -- Chapter 4 Modeling of AlGaAs/GaAs HEMT Chip Device -- 4.1 AIGaAs/GaGa HEMT Chip -- 4.2 Modeling Approach Overview -- 4.3 Small-Signal Modeling -- 4.3.1 Extrinsic Parameter Extraction -- 4.3.2 Intrinsic Parameter Extraction -- 4.4 Large-Signal Modeling -- 4.4.1 Gate Current and Charge Models -- 4.4.2 Drain Current Model -- 4.4.3 Model Verification -- Chapter 5 Demonstrator Design of a Class-AB Power Amplifier Following -- 5.1 Micro-Packaged Device Characterization -- 5.1.1 Small-Signal Performance -- 5.1.2 Large-Signal Performance -- 5.2 Bias Network Design -- 5.2.1 Drain Bias Network -- 5.2.2 Gate Bias Network -- 5.3 Matching Network Design -- 5.3.1 Matching Impedance Determination -- 5.4 Power Amplifier Performance Evaluation -- 5.4.1 Small-Signal Performance -- 5.4.2 Large-Signal Performance -- Chapter 6 Conclusions and Outlook -- Appendix -- Appendix A THLR In-Fixture Calibration -- Appendix B Precise Determination of Substrate Permittivity -- Appendix C Schematic Circuit of the Designed Power Amplifier Demonstrator -- Appendix D Power Amplifier Design Following the Conventional Design Approach -- References -- Back cover

Download or read book RF Circuit Designs for Reliability and Process Variability Resilience written by Ekavut Kritchanchai and published by . This book was released on 2016 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: CMOS devices are scaled down and beyond pose significant process variability and reliability issues. Negative biased temperature instability (NBTI) and hot carrier injection (HCI) are well-known aging phenomena that degrade transistor and circuit performance. Yield analysis and optimization, which takes into account the manufacturing tolerances, model uncertainties, variations in the process parameters, and aging factors are known as indispensable components of the circuit design procedure. Process variability issues become more predominant as the feature size decreases. With these insights provided, reliability and variability evaluations on typical RF circuits and possible compensation techniques are highly desirable. In this work, a class F power amplifier was designed and evaluated using TSMC 0.18 [micrometer] RF technology. The PA’s output power and power-added efficiency were evaluated using the ADS simulation. Physical insight of transistor operation in the RF circuit environment was examined using the Sentaurus mixed-mode device and circuit simulation. The hot electron effect and device self-heating degraded the output power and power-added efficiency of the power amplifier, especially when both the input transistor and output transistor suffered high impact ionization rates and lattice heating.

Download or read book Handbook of RF and Microwave Power Amplifiers written by John L. B. Walker and published by Cambridge University Press. This book was released on 2012 with total page 705 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is a one-stop guide for circuit designers and system/device engineers, covering everything from CAD to reliability.

Download or read book Modeling and Design Techniques for RF Power Amplifiers written by Arvind Raghavan and published by John Wiley & Sons. This book was released on 2008-02-04 with total page 224 pages. Available in PDF, EPUB and Kindle. Book excerpt: Achieve higher levels of performance, integration, compactness, and cost-effectiveness in the design and modeling of radio-frequency (RF) power amplifiers RF power amplifiers are important components of any wireless transmitter, but are often the limiting factors in achieving better performance and lower cost in a wireless communication system—presenting the RF IC design community with many challenges. The next-generation technological advances presented in this book are the result of cutting-edge research in the area of large-signal device modeling and RF power amplifier design at the Georgia Institute of Technology, and have the potential to significantly address issues of performance and cost-effectiveness in this area. Richly complemented with hundreds of figures and equations, Modeling and Design Techniques for RF Power Amplifiers introduces and explores the most important topics related to RF power amplifier design under one concise cover. With a focus on efficiency enhancement techniques and the latest advances in the field, coverage includes: Device modeling for CAD Empirical modeling of bipolar devices Scalable modeling of RF MOSFETs Power amplifier IC design Power amplifier design in silicon Efficiency enhancement of RF power amplifiers The description of state-of-the-art techniques makes this book a valuable and handy reference for practicing engineers and researchers, while the breadth of coverage makes it an ideal text for graduate- and advanced undergraduate-level courses in the area of RF power amplifier design and modeling.

Download or read book Design and Control of RF Power Amplifiers written by Alireza Shirvani and published by Springer Science & Business Media. This book was released on 2013-04-18 with total page 157 pages. Available in PDF, EPUB and Kindle. Book excerpt: Design and Control of RF Power Amplifiers investigates various architectures and concepts for the design and control of radio-frequency (RF) power amplifiers. This book covers merits and challenges of integrating RF power amplifiers in various technologies, and introduces a number of RF power amplifier performance metrics. It provides a thorough review of various power amplifier topologies, followed by a description of approaches and architectures for the control and linearization of these amplifiers. A novel parallel amplifier architecture introduced in this book offers a breakthrough solution to enhancing efficiency in systems using power control. Design and Control of RF Power Amplifiers is a valuable resource for designers, researchers and students in the field of RF integrated circuit design. Detailed and thorough coverage of various concepts in RF power amplifier design makes this book an invaluable guide for both beginners and professionals.

Download or read book Feedback Linearization of RF Power Amplifiers written by J.L. Dawson and published by Springer Science & Business Media. This book was released on 2007-05-08 with total page 144 pages. Available in PDF, EPUB and Kindle. Book excerpt: Improving the performance of the power amplifier is the most pressing problem facing designers of modern radio-frequency (RF) transceivers. Linearity and power efficiency of the transmit path are of utmost importance, and the power amplifier has proven to be the bottleneck for both. High linearity enables transmission at the highest data rates for a given channel bandwidth, and power efficiency prolongs battery lifetime in portable units and reduces heat dissipation in high-power transmitters. Cartesian feedback is a power amplifier linearization technique that acts to soften the tradeoff between power efficiency and linearity in power amplifiers. Despite its compelling, fundamental advantages, the technique has not enjoyed widespread acceptance because of certain implementation difficulties. Feedback Linearization of RF Power Amplifiers introduces new techniques for overcoming the challenges faced by the designer of a Cartesian feedback system. The theory of the new techniques are described and analyzed in detail. The book culminates with the results of the first known fully integrated Cartesian feedback power amplifier system, whose design was enabled by the techniques described. Feedback Linearization of RF Power Amplifiers is a valuable reference work for engineers in the telecommunications industry, industry researchers, academic researchers.

Download or read book RF CMOS Oscillators for Modern Wireless Applications written by Masoud Babaie and published by CRC Press. This book was released on 2022-09-01 with total page 237 pages. Available in PDF, EPUB and Kindle. Book excerpt: While mobile phones enjoy the largest production volume ever of any consumer electronics products, the demands they place on radio-frequency (RF) transceivers are particularly aggressive, especially on integration with digital processors, low area, low power consumption, while being robust against process-voltage-temperature variations. Since mobile terminals inherently operate on batteries, their power budget is severely constrained. To keep up with the ever increasing data-rate, an ever-decreasing power per bit is required to maintain the battery lifetime. The RF oscillator is the second most power-hungry block of a wireless radio (after power amplifiers). Consequently, any power reduction in an RF oscillator will greatly benefit the overall power efficiency of the cellular transceiver. Moreover, the RF oscillators' purity limits the transceiver performance. The oscillator's phase noise results in power leakage into adjacent channels in a transmit mode and reciprocal mixing in a receive mode. On the other hand, the multi-standard and multi-band transceivers that are now trending demand wide tuning range oscillators. However, broadening the oscillator’s tuning range is usually at the expense of die area (cost) or phase noise. The main goal of this book is to bring forth the exciting and innovative RF oscillator structures that demonstrate better phase noise performance, lower cost, and higher power efficiency than currently achievable. Technical topics discussed in RF CMOS Oscillators for Modern Wireless Applications include:  Design and analysis of low phase-noise class-F oscillators Analyze a technique to reduce 1/f noise up-conversion in the oscillators Design and analysis of low power/low voltage oscillators Wide tuning range oscillators Reliability study of RF oscillators in nanoscale CMOS

Download or read book RF and Microwave Transistor Oscillator Design written by Andrei Grebennikov and published by John Wiley & Sons. This book was released on 2007-04-30 with total page 458 pages. Available in PDF, EPUB and Kindle. Book excerpt: The increase of consumer electronics and communications applications using Radio Frequency (RF) and microwave circuits has implications for oscillator design. Applications working at higher frequencies and using novel technologies have led to a demand for more robust circuits with higher performance and functionality, but decreased costs, size and power consumption. As a result, there is also a need for more efficient oscillators. This book presents up to date information on all aspects of oscillator design, enabling a selection of the best oscillator topologies with optimized noise reduction and electrical performance. RF and Microwave Transistor Oscillator Design covers: analyses of non-linear circuit design methods including spectral-domain analysis, time-domain analysis and the quasilinear method; information on noise in oscillators including chapters on varactor and oscillator frequency tuning, CMOS voltage-controlled oscillators and wideband voltage-controlled oscillators; information on the stability of oscillations, with discussions on the stability of multi-resonant circuits and the phase plane method; optimized design and circuit techniques, beginning with the empirical and analytic design approaches, moving on to the high-efficiency design technique; general operation and design principles of oscillators, including a section on the historical aspects of oscillator configurations. A valuable reference for practising RF and Microwave designers and engineers, RF and Microwave Transistor Oscillator Design is also useful for lecturers, advanced students and research and design (R&D) personnel.

Download or read book Introduction to RF Power Amplifier Design and Simulation written by Abdullah Eroglu and published by CRC Press. This book was released on 2018-09-03 with total page 449 pages. Available in PDF, EPUB and Kindle. Book excerpt: Introduction to RF Power Amplifier Design and Simulation fills a gap in the existing literature by providing step-by-step guidance for the design of radio frequency (RF) power amplifiers, from analytical formulation to simulation, implementation, and measurement. Featuring numerous illustrations and examples of real-world engineering applications, this book: Gives an overview of intermodulation and elaborates on the difference between linear and nonlinear amplifiers Describes the high-frequency model and transient characteristics of metal–oxide–semiconductor field-effect transistors Details active device modeling techniques for transistors and parasitic extraction methods for active devices Explores network and scattering parameters, resonators, matching networks, and tools such as the Smith chart Covers power-sensing devices including four-port directional couplers and new types of reflectometers Presents RF filter designs for power amplifiers as well as application examples of special filter types Demonstrates the use of computer-aided design (CAD) tools, implementing systematic design techniques Blending theory with practice, Introduction to RF Power Amplifier Design and Simulation supplies engineers, researchers, and RF/microwave engineering students with a valuable resource for the creation of efficient, better-performing, low-profile, high-power RF amplifiers.

Download or read book Advanced Design Techniques for RF Power Amplifiers written by Anna N. Rudiakova and published by Springer Science & Business Media. This book was released on 2006-09-09 with total page 140 pages. Available in PDF, EPUB and Kindle. Book excerpt: Advanced Design Techniques for RF Power Amplifiers provides a deep analysis of theoretical aspects, modelling, and design strategies of RF high-efficiency power amplifiers. The book can be used as a guide by scientists and engineers dealing with the subject and as a text book for graduate and postgraduate students. Although primarily intended for skilled readers, it provides an excellent quick start for beginners.

Download or read book Linear CMOS RF Power Amplifiers for Wireless Applications written by Paulo Augusto Dal Fabbro and published by Springer Science & Business Media. This book was released on 2010-06-22 with total page 171 pages. Available in PDF, EPUB and Kindle. Book excerpt: Advances in electronics have pushed mankind to create devices, ranging from - credible gadgets to medical equipment to spacecraft instruments. More than that, modern society is getting used to—if not dependent on—the comfort, solutions, and astonishing amount of information brought by these devices. One ?eld that has continuously bene?tted from those advances is the radio frequency integrated c- cuit (RFIC) design, which in its turn has promoted countless bene?ts to the mankind as a payback. Wireless communications is one prominent example of what the - vances in electronics have enabled and their consequences to our daily life. How could anyone back in the eighties think of the possibilities opened by the wireless local area networks (WLANs) that can be found today in a host of places, such as public libraries, coffee shops, trains, to name just a few? How can a youngster, who lives this true WLAN experience nowadays, imagine a world without it? This book dealswith the design oflinearCMOS RF PowerAmpli?ers(PAs). The RF PA is a very important part of the RF transceiver, the device that enables wireless communications. Two important aspects that are key to keep the advances in RF PA design at an accelerate pace are treated: ef?ciency enhancement and frequen- tunable capability. For this purpose, the design of two different integrated circuits realizedina0. 11μmtechnologyispresented,eachoneaddressingadifferentaspect. With respect to ef?ciency enhancement, the design of a dynamic supply RF power ampli?er is treated, making up the material of Chaps. 2 to 4.

Download or read book RF and Microwave Power Amplifier Design Second Edition written by Andrei Grebennikov and published by McGraw Hill Professional. This book was released on 2015-02-09 with total page 667 pages. Available in PDF, EPUB and Kindle. Book excerpt: The latest power amp design methods Fully updated to address cutting-edge technologies, the new edition of this practical guide provides comprehensive, state-of-the-art coverage of RF and microwave power amplifier design. The book describes both existing and new schematic configurations, theoretical approaches, circuit simulation results, and implementation techniques. New chapters discuss linearization and efficiency enhancement and high-efficiency Doherty power amplifiers. Featuring a systematic approach, this comprehensive resource bridges the theory and practice of RF and microwave engineering. RF and Microwave Power Amplifier Design, Second Edition, covers: Two-port network parameters and passive elements Nonlinear circuit design methods Nonlinear active device modeling Impedance matching Power transformers, combiners, and couplers Power amplifier design fundamentals High-efficiency power amplifier design Broadband power amplifiers Linearization and efficiency enhancement techniques High-efficiency Doherty power amplifiers

Download or read book High Efficiency RF and Microwave Solid State Power Amplifiers written by Paolo Colantonio and published by John Wiley & Sons. This book was released on 2009-07-08 with total page 514 pages. Available in PDF, EPUB and Kindle. Book excerpt: Do you want to know how to design high efficiency RF and microwave solid state power amplifiers? Read this book to learn the main concepts that are fundamental for optimum amplifier design. Practical design techniques are set out, stating the pros and cons for each method presented in this text. In addition to novel theoretical discussion and workable guidelines, you will find helpful running examples and case studies that demonstrate the key issues involved in power amplifier (PA) design flow. Highlights include: Clarification of topics which are often misunderstood and misused, such as bias classes and PA nomenclatures. The consideration of both hybrid and monolithic microwave integrated circuits (MMICs). Discussions of switch-mode and current-mode PA design approaches and an explanation of the differences. Coverage of the linearity issue in PA design at circuit level, with advice on low distortion power stages. Analysis of the hot topic of Doherty amplifier design, plus a description of advanced techniques based on multi-way and multi-stage architecture solutions. High Efficiency RF and Microwave Solid State Power Amplifiers is: an ideal tutorial for MSc and postgraduate students taking courses in microwave electronics and solid state circuit/device design; a useful reference text for practising electronic engineers and researchers in the field of PA design and microwave and RF engineering. With its unique unified vision of solid state amplifiers, you won’t find a more comprehensive publication on the topic.