Download or read book Resonant Tunneling in Semiconductors written by Leroy L. Chang and published by Springer Science & Business Media. This book was released on 1991 with total page 560 pages. Available in PDF, EPUB and Kindle. Book excerpt: Forty-nine contributions from the May 1990 meeting begin with an introduction followed by discussions of different material systems with various band-structure effects. Properties associated with dynamic processes are then described, including electron scattering and charge storage. Specific situati

Download or read book Resonant Tunneling in III V Semiconductor Heterostructures written by Ravindra Manohar Kapre and published by . This book was released on 1991 with total page 414 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Resonant Tunneling of Electrons in Asymmetric Triple barrier Semiconductor Heterostructures written by Kevin Lamonte Jones and published by . This book was released on 1992 with total page 394 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Theoretical Studies of Resonant Tunneling in Semiconductor Heterostructures in an Applied Constant Electric Field written by Shaune Stephen Allen and published by . This book was released on 1992 with total page 290 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Heterostructures and Quantum Devices written by Norman G. Einspruch and published by Elsevier. This book was released on 2014-06-28 with total page 465 pages. Available in PDF, EPUB and Kindle. Book excerpt: Heterostructure and quantum-mechanical devices promise significant improvement in the performance of electronic and optoelectronic integrated circuits (ICs). Though these devices are the subject of a vigorous research effort, the current literature is often either highly technical or narrowly focused. This book presents heterostructure and quantum devices to the nonspecialist, especially electrical engineers working with high-performance semiconductor devices. It focuses on a broad base of technical applications using semiconductor physics theory to develop the next generation of electrical engineering devices. The text covers existing technologies and future possibilities within a common framework of high-performance devices, which will have a more immediate impact on advanced semiconductor physics-particularly quantum effects-and will thus form the basis for longer-term technology development.

Download or read book Atomic Scale Images of Acceptors in III V Semiconductors written by Sebastian Loth and published by Universitätsverlag Göttingen. This book was released on 2008 with total page 189 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Electronic Structure of Semiconductor Heterojunctions written by Giorgio Margaritondo and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 348 pages. Available in PDF, EPUB and Kindle. Book excerpt: E se non che di cid son vere prove A nd were it not for the true evidence Per piti e piti autori, che sa, ra. nno Of many authors who will be Per i miei versi nominati altrove, Mentioned elsewhere in my rhyme Non presterei alla penna 10. mana I would not lend my hand to the pen Per nota1' cid ch'io vidi, can temenza And describe my observations, for fear ehe non fosse do. altri casso e van 0; That they would be rejected and in vane; Mala lor chiara. e vera. esperienza But these authors' clear and true experience Mi assicura. nel dir, come persone Encourages me to report, since they Degne di fede ad ogni gra. n sentenza. Should always be trusted for their word. [From" Dittamondo", by Fazio degli UbertiJ Heterojunction interfaces, the interfaces between different semiconducting materi als, have been extensively explored for over a quarter of a century. The justifica tion for this effort is clear - these interfaces could become the building blocks of lllany novel solid-state devices. Other interfaces involving semiconductors are al ready widely used in technology, These are, for example, metal-semiconductor and insulator-semiconductor junctions and hOll1ojunctions. In comparison, the present applications of heterojunction int. erfaces are limited, but they could potentially becOlne lnuch lllore ext. ensive in the neal' future. The path towards the widespread use of heterojunctions is obstructed by several obstacles

Download or read book Theoretical Investigations of Electronic Surface States and Resonant Tunneling in Semiconductor Heterostructures written by Nawej Mwez and published by . This book was released on 1992 with total page 264 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book High Speed Heterostructure Devices written by and published by Academic Press. This book was released on 1994-07-06 with total page 481 pages. Available in PDF, EPUB and Kindle. Book excerpt: Volume 41 includes an in-depth review of the most important, high-speed switches made with heterojunction technology. This volume is aimed at the graduate student or working researcher who needs a broad overview andan introduction to current literature. The first complete review of InP-based HFETs and complementary HFETs, which promise very low power and high speed Offers a complete, three-chapter review of resonant tunneling Provides an emphasis on circuits as well as devices

Download or read book Resonant Tunneling in Polar III nitride Heterostructures written by Jimy Joe Encomendero Risco and published by . This book was released on 2020 with total page 263 pages. Available in PDF, EPUB and Kindle. Book excerpt: The outstanding material properties of III-nitride semiconductors has prompted an intense research activity focused on the engineering of resonant tunneling transport within this revolutionary family of wide-bandgap semiconductors. From resonant tunneling diode (RTD) oscillators to quantum cascade lasers (QCLs), nitride devices hold the promise for the realization of high-power ultra-fast sources of terahertz (THz) radiation. Although considerable research effort has been devoted over the past two decades, nitride-based resonant tunneling transport has been demonstrated only during the last four years. In this work, I present the various aspects of heterostructure design, epitaxial growth and device fabrication techniques, which have led to the first unequivocal demonstration of robust resonant tunneling transport and reliable room temperature negative differential conductance in III-Nitride heterostructures. This thesis constitutes a comprehensive work spanning all fronts of experimental, theoretical, and computational research focused on the fundamental physics and engineering of resonant tunneling transport in polar III-nitride semiconductors. Our combined experimental and theoretical approach, allowed us to shed light into the physics of electronic quantum interference phenomena in polar semiconductors which had remained hidden until now, resulting in the discovery of new tunneling features, unique in polar RTDs. The robustness of our experimental data enabled us to track these unique features to the broken inversion symmetry, which generates the built-in spontaneous and piezoelectric polarization fields. After identifying the intimate connection between the polarization fields and the resonant tunneling current, we harness this relationship to develop a completely new approach to measure the magnitude of the internal polarization fields via electron resonant tunneling transport. To get further insight into the asymmetric tunneling injection originated by the polar active region, we present an analytical theory for tunneling transport across polar heterostructures. A general expression for the resonant tunneling current which includes contributions from coherent and sequential tunneling processes is presented. After the application of this new theory to the case of GaN/AlN RTDs, their experimental current-voltage characteristics are reproduced over both bias polarities. This agreement allows us to elucidate the role played by the internal polarization fields on the amplitude of the electronic transmission and broadening of the resonant tunneling line shape. Our analytical model is then employed for the design of high-current density GaN/AlN RTDs which are harnessed as the gain elements of the first microwave oscillators and harmonic multipliers driven by III-nitride RTDs. The findings presented here pave the way for the realization of III-Nitride-based high-speed oscillators and quantum cascade lasers that operate at wavelengths that, until now, remain unreachable by other semiconductor materials.

Download or read book Resonant Tunneling in Semiconductors written by L. L. Chang and published by . This book was released on 1992-02-01 with total page 558 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Resonant Tunnelling in Semiconductor Heterostructures written by Mark Levence Leadbeater and published by . This book was released on 1990 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Resonant Tunneling and Hot Electron Spectroscopy in Buried Rare Earth Arsenide Semiconductor Heterostructures written by and published by . This book was released on 1997 with total page 7 pages. Available in PDF, EPUB and Kindle. Book excerpt: A new materials arena has been opened for quantum electron transport devices based on magnetic, semi-metal compound semiconductor heterostructures. Epitaxial ultrathin films of a rare earth arsenide, ErAs, were grown in GaAs semiconductors. The dissimilarities between the ErAs, a magnetic semimetal, and the compound semiconductor make possible the fabrication of three terminal resonant tunneling transistors with ultra thin semi-metal quantum wells. Resonant tunneling through semi-metal quantum wells was observed for the first time. A strong coupling of the magnetization and the resonant tunneling was discovered that demonstrates magnetization controlled resonant tunneling. Nano-composites of ErAs / GaAs were also grown. Electron transport in these systems exhibits giant magneto-resistance, magnetization controlled island to island electron hopping transport. This research program has opened the possibility of high density, non-volatile information storage and processing based on magnetic, semi-metallic, quantum structures grown and integrated into compound semiconductor heterostructures.

Download or read book Donor assisted Resonant Tunneling in Semiconductor Heterostructures written by João Wesley Lopes Sakai and published by . This book was released on 1997 with total page 326 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Characterization of Semiconductor Heterostructures and Nanostructures written by Lorenzo Rigutti and published by Elsevier Inc. Chapters. This book was released on 2013-04-11 with total page 67 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Transport and Tunneling Through Small Potential Barriers in III V Semiconductor Heterostructures written by Etienne Marclay and published by . This book was released on 1988 with total page 127 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Resonent Tunneling in Semiconductor Heterostructures written by M. L. Leadbeater and published by . This book was released on 1990 with total page 315 pages. Available in PDF, EPUB and Kindle. Book excerpt: