Download or read book Reliability Testing of Electron Bombarded Semiconductor Diodes written by Aris Silzars and published by . This book was released on 1973 with total page 46 pages. Available in PDF, EPUB and Kindle. Book excerpt: Reliability tests of reverse biased semiconductor diodes operating in electron bombarded semiconductor devices are described. One device operating Class B at 20 W/ sq mm power dissipation density has been tested in excess of 10,000 hours. Another similar device is approaching 10,000 hours of operation. No degradation in performance characteristics has been observed in either device. The diodes used in these devices incorporate state-of-the-art passivation techniques including pillar supported integral metal beam shield. (Author).

Download or read book Microcircuit Reliability Bibliography written by and published by . This book was released on 1978 with total page 412 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Nuclear Science Abstracts written by and published by . This book was released on 1975 with total page 1146 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1980 with total page 1280 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Fabrication of Electron Bombarded Semiconductor EBS Diodes written by Barry E. Burke and published by . This book was released on 1974 with total page 61 pages. Available in PDF, EPUB and Kindle. Book excerpt: This report is a complete description of the design criteria and the processes used for the fabrication of electron-bombarded semiconductor diodes for Class C operation at 2.1 GHz and lower frequencies. The devices are planar p-n junction diodes fabricated on n/n(+) epitaxial material with a deep diffused guard ring surrounding the thin junction which the electron beam penetrates. Leakage currents are sufficiently low so that thermal runaway does not occur until the device temperature exceeds 350C. It is demonstrated that a Schottky barrier is not a good choice for these large area power devices due to higher leakage current, and that a p-n junction is to be preferred. However, a layer of metal was needed to reduce the net sheet resistance of the thin p+ junction and a thin (approximately 300A) sputtered film of molybdenum was shown to be a good choice in this case. The use of Mo-Au metalization proved to be a simple and reliable system for these devices. (Modified author abstract).

Download or read book Technical Abstract Bulletin written by and published by . This book was released on with total page 828 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Government Reports Announcements Index written by and published by . This book was released on 1979-11 with total page 1064 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book U S Government Research Reports written by and published by . This book was released on 1964 with total page 1076 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Monthly Catalog of United States Government Publications written by and published by . This book was released on 1972 with total page 1932 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Government Reports Annual Index written by and published by . This book was released on 1975 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Discrete Semiconductor Reliability Transistor diode Data written by Reliability Analysis Center (U.S.) and published by . This book was released on 1976 with total page 172 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Science Abstracts written by and published by . This book was released on 1993 with total page 980 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book NBS Special Publication written by and published by . This book was released on 1968 with total page 828 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Publications of the National Bureau of Standards 1972 Catalog written by United States. National Bureau of Standards and published by . This book was released on 1973 with total page 456 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Publications written by United States. National Bureau of Standards and published by . This book was released on 1972 with total page 480 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Publications of the National Institute of Standards and Technology Catalog written by National Institute of Standards and Technology (U.S.) and published by . This book was released on 1971 with total page 810 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Reliability And Radiation Effects In Compound Semiconductors written by Allan H Johnston and published by World Scientific. This book was released on 2010-04-27 with total page 376 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book focuses on reliability and radiation effects in compound semiconductors, which have evolved rapidly during the last 15 years. It starts with first principles, and shows how advances in device design and manufacturing have suppressed many of the older reliability mechanisms.It is the first book that comprehensively covers reliability and radiation effects in optoelectronic as well as microelectronic devices. It contrasts reliability mechanisms of compound semiconductors with those of silicon-based devices, and shows that the reliability of many compound semiconductors has improved to the level where they can be used for ten years or more with low failure rates.