Download or read book Reliability Study of Gallium Arsenide Refractory Gate Field Effect Transistors written by Eduardo K. Kafati and published by . This book was released on 1983 with total page 160 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Reliability of Microwave Gallium Arsenide Field Effect Transistors written by Communications Research Centre (Canada) and published by . This book was released on 1975 with total page 5 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Reliability of Gallium Arsenide MMICs written by A. Christou and published by . This book was released on 1992-12-15 with total page 488 pages. Available in PDF, EPUB and Kindle. Book excerpt: A team of internationally renowned experts contribute articles which emphasize the reliability and quality issues inherent in all phases of systems design. Coverage includes fundamental failure modes of each of the device building blocks, packaged MMIC modules, current practical aspects of reliability testing and much more.
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1995 with total page 692 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book A Study of the Gallium Arsenide Field Effect Transistor written by and published by . This book was released on 1971 with total page 48 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book A Study of the Field Effect Transistor on Semi insulating Gallium Arsenide written by Wayne Francis DeVilbiss and published by . This book was released on 1968 with total page 101 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Semiconductor Device Reliability written by A. Christou and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 571 pages. Available in PDF, EPUB and Kindle. Book excerpt: This publication is a compilation of papers presented at the Semiconductor Device Reliabi lity Workshop sponsored by the NATO International Scientific Exchange Program. The Workshop was held in Crete, Greece from June 4 to June 9, 1989. The objective of the Workshop was to review and to further explore advances in the field of semiconductor reliability through invited paper presentations and discussions. The technical emphasis was on quality assurance and reliability of optoelectronic and high speed semiconductor devices. The primary support for the meeting was provided by the Scientific Affairs Division of NATO. We are indebted to NATO for their support and to Dr. Craig Sinclair, who admin isters this program. The chapters of this book follow the format and order of the sessions of the meeting. Thirty-six papers were presented and discussed during the five-day Workshop. In addi tion, two panel sessions were held, with audience participation, where the particularly controversial topics of bum-in and reliability modeling and prediction methods were dis cussed. A brief review of these sessions is presented in this book.
Download or read book A Study of Low noise Liquid Nitrogen Cooled Gallium Arsenide Field Effect Transistors written by Craig Scott and published by . This book was released on 1981 with total page 292 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Materials for High Temperature Semiconductor Devices written by Committee on Materials for High-Temperature Semiconductor Devices and published by National Academies Press. This book was released on 1995-09-28 with total page 136 pages. Available in PDF, EPUB and Kindle. Book excerpt: Major benefits to system architecture would result if cooling systems for components could be eliminated without compromising performance. This book surveys the state-of-the-art for the three major wide bandgap materials (silicon carbide, nitrides, and diamond), assesses the national and international efforts to develop these materials, identifies the technical barriers to their development and manufacture, determines the criteria for successfully packaging and integrating these devices into existing systems, and recommends future research priorities.
Download or read book Analysis of Gallium Arsenide Field Effect Transistors written by Michael Arthur Naukam and published by . This book was released on 1998 with total page 150 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Reliability of Compound Analogue Semiconductor Integrated Circuits written by Aris Christou and published by RIAC. This book was released on 2006 with total page 487 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Gallium Arsenide Field Effect Transistors with Semi Insulated Gates written by D. W. Shaw and published by . This book was released on 1977 with total page 84 pages. Available in PDF, EPUB and Kindle. Book excerpt: This report summarizes the results of a program for development and evaluation of gallium arsenide field effect transistors with semi-insulated gates (SIGFETs). These devices are potentially applicable to a number of microwave systems, including active-element phased-array radars and ECM jammers. Included in the scope of the program was an analysis of Class A and Class B FET amplifiers; design, fabrication, and dc and rf characterization of SIGFETs; evaluation of procedures for formation of n(+) contact regions for FETs; and an objective comparison of the properties of SIGFETs with those of conventional GaAs FETs. Theoretical analyses of the dc and rf operating characteristics of Class A and Class B FET amplifiers showed that maximum efficiency is expected for Class B operation into a tuned load. This conclusion was supported by the experimental observation that maximum efficiency was obtained for GaAs FETs when the gate bias approaches the pinch-off voltage, i.e., approaching Class B operation. Procedures were developed for fabrication of SIGFETs using either epitaxial growth or ion bombardment to form the region of high resistivity or semi-insulating GaAs to be located beneath the gate contact metal. SIGFETs fabricated by this procedure were compared with conventional FETs (without semi-insulated gates) fabricated from the same starting material. The SIGFETs have higher gate reverse breakdown voltages, lower transconductances, and approx. 1 dB lower small signal gains.
Download or read book A Study of Gallium Arsenide Metal Semiconductor Field Effect Transistors for Integrated Circuit Implementation written by Afshin Parshad and published by . This book was released on 1985 with total page 88 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Reliability Physics 1982 written by and published by . This book was released on 1982 with total page 344 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Fabrication of GaAs Devices written by Albert G. Baca and published by IET. This book was released on 2005-09 with total page 372 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides fundamental and practical information on all aspects of GaAs processing and gives pragmatic advice on cleaning and passivation, wet and dry etching and photolithography. Other topics covered include device performance for HBTs (Heterojunction Bipolar Transistors) and FETs (Field Effect Transistors), how these relate to processing choices, and special processing issues such as wet oxidation, which are especially important in optoelectronic devices. This book is suitable for both new and practising engineers.
Download or read book Fabrication of Ultra small Gate Length Gallium Arsenide Field effect Transistors written by Gregory Bazán and published by . This book was released on 1991 with total page 152 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book The Integration Requirements of the Gallium Arsenide Insulated Gate Field effect Transistor written by Mark Irvin Bowser and published by . This book was released on 1994 with total page 716 pages. Available in PDF, EPUB and Kindle. Book excerpt:
