Download or read book Reliability Studies of Low voltage Planar Power Mosfet Devices written by James Michael Moses and published by . This book was released on 2010 with total page 67 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Advanced Power MOSFET Concepts written by B. Jayant Baliga and published by Springer Science & Business Media. This book was released on 2010-06-26 with total page 573 pages. Available in PDF, EPUB and Kindle. Book excerpt: During the last decade many new concepts have been proposed for improving the performance of power MOSFETs. The results of this research are dispersed in the technical literature among journal articles and abstracts of conferences. Consequently, the information is not readily available to researchers and practicing engineers in the power device community. There is no cohesive treatment of the ideas to provide an assessment of the relative merits of the ideas. "Advanced Power MOSFET Concepts" provides an in-depth treatment of the physics of operation of advanced power MOSFETs. Analytical models for explaining the operation of all the advanced power MOSFETs will be developed. The results of numerical simulations will be provided to give additional insight into the device physics and validate the analytical models. The results of two-dimensional simulations will be provided to corroborate the analytical models and give greater insight into the device operation.
Download or read book Dielectrics for Nanosystems 7 Materials Science Processing Reliability and Manufacturing written by D. Misra and published by The Electrochemical Society. This book was released on with total page 365 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Parameter Extraction and Device Physics Projections on Lateral Low Voltage Power Mosfet Configurations written by and published by . This book was released on 2001 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The growing demand for battery-operated portable systems and power supply restrictions due to device scaling and reliability are major driving forces for development of low voltage/high current MOSFETs for VLSI technology. Reducing the power supply is a very effective way to reduce power consumption, hence increasing the device operating lifetime and relaxing the reliability constraints. The biggest challenge is to maintain high performance characteristics of the device, i.e. to prevent degradation of the device speed, by scaling down the device, thus lowering the threshold voltage and increasing the current-drive of the MOSFET. The contents of this document describe the major portion of experimental efforts and the subsequent results, of a project initiated by the Procter and Gamble Company with the intent of developing ultra low voltage power MOSFETs in collaboration with the University of Cincinnati. The specific objectives of the project are given below: 1. Full device characterization of existing state of the art power MOSFETs, verification and analysis and detailed understanding of the provided models and fitness comparison. 2. Parameter Extraction, model generation and comparison with obtained I-V characteristics. 3. Testing and full characterization of the lateral power MOSFET. 4. Investigation of the semiconductor physics for short channel, high current, low voltageMOSFETs and impact of sub 1V design on power MOSFET performance. 5. Parameter extraction and modeling of the developed device.
Download or read book Semiconductor Power Devices written by Josef Lutz and published by Springer. This book was released on 2018-02-16 with total page 723 pages. Available in PDF, EPUB and Kindle. Book excerpt: Halbleiter-Leistungsbauelemente sind das Kernstück der Leistungselektronik. Sie bestimmen die Leistungsfähigkeit und machen neuartige und verlustarme Schaltungen erst möglich. In dem Band wird neben den Halbleiter-Leistungsbauelementen selbst auch die Aufbau- und Verbindungstechnik behandelt: von den physikalischen Grundlagen und der Herstellungstechnologie über einzelne Bauelemente bis zu thermomechanischen Problemen, Zerstörungsmechanismen und Störungseffekten. Die 2., überarbeitete Auflage berücksichtigt technische Neuerungen und Entwicklungen.
Download or read book Gate Oxide Reliability of 4H SiC MOSFETs written by Tianshi Liu (Electrical engineer) and published by . This book was released on 2022 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: SiC power MOSFETs have received increasing attention in electric vehicle (EV) applications. Due to the safety-critical nature and the operational lifetime requirement of the automotive industry, the long-term integrity of the gate oxides of SiC power MOSFETs is a primary concern. This dissertation evaluates the gate oxide reliability of recently manufactured commercial SiC power MOSFETs from various vendors. In addition, research work on the oxide lifetime evaluations and the failure mechanisms under different operating conditions is also included. We first analyze the gate leakage current behaviors and the corresponding failure mechanisms of recently manufactured commercial 1.2 kV SiC power MOSFETs under different oxide electric fields. Due to the effects of positive and negative charge trapping in the oxide, distinct gate leakage current behaviors are observed under different oxide electric fields. The threshold voltage shift measurements show that impact-ionization-induced hole trapping is the cause of the leakage current behavior and the primary failure mechanism under high oxide electric fields. We also show that the near interface oxide traps affect gate leakage current behaviors under different temperatures. When a significant amount of near interface oxide traps exist within the oxide, the breakdown voltage of the MOSFET decreases at elevated temperatures, and a "cross-over" phenomenon occurs. Therefore, gate leakage current measurements under different temperatures can be used as an indicator for gate oxide quality. Constant-voltage time-dependent dielectric breakdown (TDDB) measurements are applied to the commercial SiC power MOSFETs under moderate and high oxide electric fields. Different electric field acceleration parameters under different oxide electric fields are observed. The gate leakage current and threshold voltage shift measurements confirm that the impact-ionization-induced hole trapping is the cause of higher field acceleration parameters under high oxide electric fields. It is also demonstrated that a higher leads to lifetime overestimation under normal operating conditions. Therefore, constant voltage TDDB measurements must be performed at lower oxide electric fields to avoid hole trapping and establish more reliable lifetime predictions. The effects of surface defects on the gate oxide reliability and yield of large-area SiC power MOSFETs are also studied. Yield analyses are applied to defect maps of 6-inch commercial SiC n-type wafers. The results show that the defect density needs to be reduced to 0.2 cm-2 or lower to obtain more than 80% yield for manufacturing the 200A SiC power MOSFETs desired by the automotive industry. TDDB measurements are conducted on commercially available SiC power MOSFETs with different current ratings (i.e., different device areas). Degradation of oxide lifetime prediction and more spread-out oxide failure times are observed for the larger commercial power MOSFETs. Detailed discussion on the gate oxide screening process and the comparison of the gate oxide reliability between planar and trench SiC power MOSFETs are also included.
Download or read book Microelectronic Failure Analysis Desk Reference written by and published by ASM International. This book was released on 2001-01-01 with total page 162 pages. Available in PDF, EPUB and Kindle. Book excerpt: Developed by the Electronic Device Failure Analysis Society (EDFAS) Publications Committee.
Download or read book Complementary Metal Oxide Semiconductor written by Kim Ho Yeap and published by BoD – Books on Demand. This book was released on 2018-08-01 with total page 162 pages. Available in PDF, EPUB and Kindle. Book excerpt: In this book, Complementary Metal Oxide Semiconductor ( CMOS ) devices are extensively discussed. The topics encompass the technology advancement in the fabrication process of metal oxide semiconductor field effect transistors or MOSFETs (which are the fundamental building blocks of CMOS devices) and the applications of transistors in the present and future eras. The book is intended to provide information on the latest technology development of CMOS to researchers, physicists, as well as engineers working in the field of semiconductor transistor manufacturing and design.
Download or read book Electrical and Temperature Stress Effects on Power Mosfets written by Chen Mo and published by . This book was released on 2015 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: High electrical field and high temperature stresses are the two main factors that are critical in determining power metal-oxide-Si field effect transistor's (MOSFET's) reliability and lifetime. The work reported in this thesis uses planar power n-channel MOSFETs and vertical U-shaped gated n-channel MOSFETs (UMOSFETs). Electrical stress studies were made on the planar MOSFETs, whereas the temperature stress studies were performed on the UMOSFETs. The electrical stress protocols used are those of high voltage application to the gate at the two opposite polarities as well as hot electron stress. Before and after stress transistor parameters, including threshold voltage, transconductance, and subthreshold swing were measured and used to study the stress effects.. The N-channel UMOSFETs were used to study temperature effects and current stability. A p-n junction of a body diode in the UMOSFET is utilized and the current-voltage characteristics of the diode are used to provide data on the temperature of the active region of the UMOSFET. For a constant source-to-drain current in the UMOSFET the drain-to-source voltage needed to be slightly increased for low current levels (
Download or read book The Proceedings of the 17th Annual Conference of China Electrotechnical Society written by Jian Li and published by Springer Nature. This book was released on 2023-03-31 with total page 1411 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book gathers outstanding papers presented at the 17th Annual Conference of China Electrotechnical Society, organized by China Electrotechnical Society (CES), held in Beijing, China, from September 17 to 18, 2022. It covers topics such as electrical technology, power systems, electromagnetic emission technology, and electrical equipment. It introduces the innovative solutions that combine ideas from multiple disciplines. The book is very much helpful and useful for the researchers, engineers, practitioners, research students, and interested readers.
Download or read book The proceedings of the 16th Annual Conference of China Electrotechnical Society written by Xidong Liang and published by Springer Nature. This book was released on 2022-04-22 with total page 1396 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book gathers outstanding papers presented at the 16th Annual Conference of China Electrotechnical Society, organized by China Electrotechnical Society (CES), held in Beijing, China, from September 24 to 26, 2021. It covers topics such as electrical technology, power systems, electromagnetic emission technology, and electrical equipment. It introduces the innovative solutions that combine ideas from multiple disciplines. The book is very much helpful and useful for the researchers, engineers, practitioners, research students, and interested readers.
Download or read book The IGBT Device written by B. Jayant Baliga and published by William Andrew. This book was released on 2015-03-06 with total page 733 pages. Available in PDF, EPUB and Kindle. Book excerpt: The IGBT device has proved to be a highly important Power Semiconductor, providing the basis for adjustable speed motor drives (used in air conditioning and refrigeration and railway locomotives), electronic ignition systems for gasolinepowered motor vehicles and energy-saving compact fluorescent light bulbs. Recent applications include plasma displays (flat-screen TVs) and electric power transmission systems, alternative energy systems and energy storage. This book is the first available to cover the applications of the IGBT, and provide the essential information needed by applications engineers to design new products using the device, in sectors including consumer, industrial, lighting, transportation, medical and renewable energy. The author, B. Jayant Baliga, invented the IGBT in 1980 while working for GE. His book will unlock IGBT for a new generation of engineering applications, making it essential reading for a wide audience of electrical engineers and design engineers, as well as an important publication for semiconductor specialists. Essential design information for applications engineers utilizing IGBTs in the consumer, industrial, lighting, transportation, medical and renewable energy sectors. Readers will learn the methodology for the design of IGBT chips including edge terminations, cell topologies, gate layouts, and integrated current sensors. The first book to cover applications of the IGBT, a device manufactured around the world by more than a dozen companies with sales exceeding $5 Billion; written by the inventor of the device.
Download or read book Silicon Analog Components written by Badih El-Kareh and published by Springer. This book was released on 2019-08-07 with total page 648 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book covers modern analog components, their characteristics, and interactions with process parameters. It serves as a comprehensive guide, addressing both the theoretical and practical aspects of modern silicon devices and the relationship between their electrical properties and processing conditions. Based on the authors’ extensive experience in the development of analog devices, this book is intended for engineers and scientists in semiconductor research, development and manufacturing. The problems at the end of each chapter and the numerous charts, figures and tables also make it appropriate for use as a text in graduate and advanced undergraduate courses in electrical engineering and materials science. Enables engineers to understand analog device physics, and discusses important relations between process integration, device design, component characteristics, and reliability; Describes in step-by-step fashion the components that are used in analog designs, the particular characteristics of analog components, while comparing them to digital applications; Explains the second-order effects in analog devices, and trade-offs between these effects when designing components and developing an integrated process for their manufacturing.
Download or read book ISPSD 98 written by and published by . This book was released on 1998 with total page 550 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Silicon Carbide Power Devices written by B Jayant Baliga and published by World Scientific. This book was released on 2006-01-05 with total page 526 pages. Available in PDF, EPUB and Kindle. Book excerpt: Power semiconductor devices are widely used for the control and management of electrical energy. The improving performance of power devices has enabled cost reductions and efficiency increases resulting in lower fossil fuel usage and less environmental pollution. This book provides the first cohesive treatment of the physics and design of silicon carbide power devices with an emphasis on unipolar structures. It uses the results of extensive numerical simulations to elucidate the operating principles of these important devices.
Download or read book Silicon Carbide Volume 2 written by Peter Friedrichs and published by John Wiley & Sons. This book was released on 2011-04-08 with total page 520 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon Carbide - this easy to manufacture compound of silicon and carbon is said to be THE emerging material for applications in electronics. High thermal conductivity, high electric field breakdown strength and high maximum current density make it most promising for high-powered semiconductor devices. Apart from applications in power electronics, sensors, and NEMS, SiC has recently gained new interest as a substrate material for the manufacture of controlled graphene. SiC and graphene research is oriented towards end markets and has high impact on areas of rapidly growing interest like electric vehicles. This volume is devoted to high power devices products and their challenges in industrial application. Readers will benefit from reports on development and reliability aspects of Schottky barrier diodes, advantages of SiC power MOSFETs, or SiC sensors. The authors discuss MEMS and NEMS as SiC-based electronics for automotive industry as well as SiC-based circuit elements for high temperature applications, and the application of transistors in PV-inverters. The list of contributors reads like a "Who's Who" of the SiC community, strongly benefiting from collaborations between research institutions and enterprises active in SiC crystal growth and device development. Among the former are CREE Inc. and Fraunhofer ISE, while the industry is represented by Toshiba, Nissan, Infineon, NASA, Naval Research Lab, and Rensselaer Polytechnic Institute, to name but a few.
Download or read book Springer Handbook of Semiconductor Devices written by Massimo Rudan and published by Springer Nature. This book was released on 2022-11-10 with total page 1680 pages. Available in PDF, EPUB and Kindle. Book excerpt: This Springer Handbook comprehensively covers the topic of semiconductor devices, embracing all aspects from theoretical background to fabrication, modeling, and applications. Nearly 100 leading scientists from industry and academia were selected to write the handbook's chapters, which were conceived for professionals and practitioners, material scientists, physicists and electrical engineers working at universities, industrial R&D, and manufacturers. Starting from the description of the relevant technological aspects and fabrication steps, the handbook proceeds with a section fully devoted to the main conventional semiconductor devices like, e.g., bipolar transistors and MOS capacitors and transistors, used in the production of the standard integrated circuits, and the corresponding physical models. In the subsequent chapters, the scaling issues of the semiconductor-device technology are addressed, followed by the description of novel concept-based semiconductor devices. The last section illustrates the numerical simulation methods ranging from the fabrication processes to the device performances. Each chapter is self-contained, and refers to related topics treated in other chapters when necessary, so that the reader interested in a specific subject can easily identify a personal reading path through the vast contents of the handbook.
