Download or read book Reliability and Failure Analysis of GaN on Si Power Devices written by Wen Yang and published by . This book was released on 2021 with total page 155 pages. Available in PDF, EPUB and Kindle. Book excerpt: Wide bandgap power semiconductor devices, especially Gallium Nitride (GaN) high electron mobility transistors (HEMTs), have gained a lot of attention for high power applications due to their low on-resistance and high switching speed compared to their silicon counterparts. However, the reliability and failure issues related to dynamic performance, gate reliability, and electrostatic discharge have limited the wide applications of GaN power devices. This dissertation presents a systematic study of reliability and failure analysis of GaN-on-Si power devices. Firstly, the correlation between the physical trap mechanisms and the dynamic on-resistance (R[subscript on]) degradation has been investigated using a multi-frequency C-V measurement during pulse-mode stress. The experimental results indicate that the deep-level traps originated from the buffer layer play a dominant role in the dynamic R[subscript on] degradation. Secondly, the Si substrate in GaN-on-Si lateral power devices can be used as an independent contact termination rather than a thermal cooling pad. Therefore, the substrate bias effect in dynamic R[subscript on] and Gate Charge (Q[subscript g]) is necessary to explore both conduction and switching loss in GaN-based converter. A reverse dual polarity (RDP) substrate pulse technique has been developed to mitigate the dynamic R[subscript on] degradation. Thirdly, the gate reliability issues, including Time-dependent dielectric breakdown (TDDB), and Bias Temperature Instability (BTI) have been explored to improve the current capability. The physical model of TDDB in GaN power devices has been established by applying the substrate biases. And three phases of threshold voltage degradation have been presented under Negative Bias Temperature Instability stress. Lastly, the ESD characteristics of GaN power devices are considered for the development of a monolithic GaN-on-Si platform. The breakdown mechanisms under ESD stress have been comprehensively studied using Transmission Line Pulse (TLP) and Very-fast Transmission Line Pulse (VFTLP) measurements.

Download or read book Power GaN Devices written by Matteo Meneghini and published by Springer. This book was released on 2016-09-08 with total page 383 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with contributions from the most active research groups in the field. It describes how gallium nitride has emerged as an excellent material for the fabrication of power transistors; thanks to the high energy gap, high breakdown field, and saturation velocity of GaN, these devices can reach breakdown voltages beyond the kV range, and very high switching frequencies, thus being suitable for application in power conversion systems. Based on GaN, switching-mode power converters with efficiency in excess of 99 % have been already demonstrated, thus clearing the way for massive adoption of GaN transistors in the power conversion market. This is expected to have important advantages at both the environmental and economic level, since power conversion losses account for 10 % of global electricity consumption. The first part of the book describes the properties and advantages of gallium nitride compared to conventional semiconductor materials. The second part of the book describes the techniques used for device fabrication, and the methods for GaN-on-Silicon mass production. Specific attention is paid to the three most advanced device structures: lateral transistors, vertical power devices, and nanowire-based HEMTs. Other relevant topics covered by the book are the strategies for normally-off operation, and the problems related to device reliability. The last chapter reviews the switching characteristics of GaN HEMTs based on a systems level approach. This book is a unique reference for people working in the materials, device and power electronics fields; it provides interdisciplinary information on material growth, device fabrication, reliability issues and circuit-level switching investigation.

Download or read book GaN Transistors for Efficient Power Conversion written by Alex Lidow and published by John Wiley & Sons. This book was released on 2019-08-12 with total page 470 pages. Available in PDF, EPUB and Kindle. Book excerpt: An up-to-date, practical guide on upgrading from silicon to GaN, and how to use GaN transistors in power conversion systems design This updated, third edition of a popular book on GaN transistors for efficient power conversion has been substantially expanded to keep students and practicing power conversion engineers ahead of the learning curve in GaN technology advancements. Acknowledging that GaN transistors are not one-to-one replacements for the current MOSFET technology, this book serves as a practical guide for understanding basic GaN transistor construction, characteristics, and applications. Included are discussions on the fundamental physics of these power semiconductors, layout, and other circuit design considerations, as well as specific application examples demonstrating design techniques when employing GaN devices. GaN Transistors for Efficient Power Conversion, 3rd Edition brings key updates to the chapters of Driving GaN Transistors; Modeling, Simulation, and Measurement of GaN Transistors; DC-DC Power Conversion; Envelope Tracking; and Highly Resonant Wireless Energy Transfer. It also offers new chapters on Thermal Management, Multilevel Converters, and Lidar, and revises many others throughout. Written by leaders in the power semiconductor field and industry pioneers in GaN power transistor technology and applications Updated with 35% new material, including three new chapters on Thermal Management, Multilevel Converters, Wireless Power, and Lidar Features practical guidance on formulating specific circuit designs when constructing power conversion systems using GaN transistors A valuable resource for professional engineers, systems designers, and electrical engineering students who need to fully understand the state-of-the-art GaN Transistors for Efficient Power Conversion, 3rd Edition is an essential learning tool and reference guide that enables power conversion engineers to design energy-efficient, smaller, and more cost-effective products using GaN transistors.

Download or read book Reliability and Failure Mechanisms of GaN HEMT Devices Suitable for High frequency and High power Applications written by Antonio Stocco and published by . This book was released on 2012 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Study of Performance and Reliability in GaN on Si Power Devices Impacts of Oxygen Plasma in P GaN HEMTs and Trench Processes in Schottky Barrier Diode written by and published by . This book was released on 2022 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book GaN Technology written by Maurizio Di Paolo Emilio and published by Springer Nature. This book was released on with total page 388 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Gallium Nitride enabled High Frequency and High Efficiency Power Conversion written by Gaudenzio Meneghesso and published by Springer. This book was released on 2018-05-12 with total page 242 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book demonstrates to readers why Gallium Nitride (GaN) transistors have a superior performance as compared to the already mature Silicon technology. The new GaN-based transistors here described enable both high frequency and high efficiency power conversion, leading to smaller and more efficient power systems. Coverage includes i) GaN substrates and device physics; ii) innovative GaN -transistors structure (lateral and vertical); iii) reliability and robustness of GaN-power transistors; iv) impact of parasitic on GaN based power conversion, v) new power converter architectures and vi) GaN in switched mode power conversion. Provides single-source reference to Gallium Nitride (GaN)-based technologies, from the material level to circuit level, both for power conversions architectures and switched mode power amplifiers; Demonstrates how GaN is a superior technology for switching devices, enabling both high frequency, high efficiency and lower cost power conversion; Enables design of smaller, cheaper and more efficient power supplies.

Download or read book Reliability and Failure Analysis of High Power LED Packaging written by Cher Ming Tan and published by Woodhead Publishing. This book was released on 2022-09-24 with total page 190 pages. Available in PDF, EPUB and Kindle. Book excerpt: Reliability and Failure Analysis of High-Power LED Packaging provides fundamental understanding of the reliability and failure analysis of materials for high-power LED packaging, with the ultimate goal of enabling new packaging materials. This book describes the limitations of the present reliability standards in determining the lifetime of high-power LEDs due to the lack of deep understanding of the packaging materials and their interaction with each other. Many new failure mechanisms are investigated and presented with consideration of the different stresses imposed by varying environmental conditions. The detailed failure mechanisms are unique to this book and will provide insights for readers regarding the possible failure mechanisms in high-power LEDs. The authors also show the importance of simulation in understanding the hidden failure mechanisms in LEDs. Along with simulation, the use of various destructive and non-destructive tools such as C-SAM, SEM, FTIR, Optical Microscopy, etc. in investigation of the causes of LED failures are reviewed. The advancement of LEDs in the last two decades has opened vast new applications for LEDs which also has led to harsher stress conditions for high-power LEDs. Thus, existing standards and reliability tests need to be revised to meet the new demands for high-power LEDs. Introduces the failure mechanisms of high-power LEDs under varying environmental conditions and methods of how to test, simulate, and predict them Describes the chemistry underlying the material degradation and its impact on LEDs Discusses future directions of new packaging materials for improved performance and reliability of high-power LEDs

Download or read book Properties of Advanced Semiconductor Materials written by Michael E. Levinshtein and published by John Wiley & Sons. This book was released on 2001-02-21 with total page 220 pages. Available in PDF, EPUB and Kindle. Book excerpt: Containing the most reliable parameter values for each of these semiconductor materials, along with applicable references, these data are organized in a structured, logical way for each semiconductor material. * Reviews traditional semiconductor materials as well as new, advanced semiconductors. * Essential authoritative handbook on the properties of semiconductor materials.

Download or read book Power Electronic Packaging written by Yong Liu and published by Springer Science & Business Media. This book was released on 2012-02-15 with total page 606 pages. Available in PDF, EPUB and Kindle. Book excerpt: Power Electronic Packaging presents an in-depth overview of power electronic packaging design, assembly,reliability and modeling. Since there is a drastic difference between IC fabrication and power electronic packaging, the book systematically introduces typical power electronic packaging design, assembly, reliability and failure analysis and material selection so readers can clearly understand each task's unique characteristics. Power electronic packaging is one of the fastest growing segments in the power electronic industry, due to the rapid growth of power integrated circuit (IC) fabrication, especially for applications like portable, consumer, home, computing and automotive electronics. This book also covers how advances in both semiconductor content and power advanced package design have helped cause advances in power device capability in recent years. The author extrapolates the most recent trends in the book's areas of focus to highlight where further improvement in materials and techniques can drive continued advancements, particularly in thermal management, usability, efficiency, reliability and overall cost of power semiconductor solutions.

Download or read book Reliability of Power Electronic Converter Systems written by Henry Shu-hung Chung and published by IET. This book was released on 2015-12-07 with total page 502 pages. Available in PDF, EPUB and Kindle. Book excerpt: The main aims of power electronic converter systems (PECS) are to control, convert, and condition electrical power flow from one form to another through the use of solid state electronics. This book outlines current research into the scientific modeling, experimentation, and remedial measures for advancing the reliability, availability, system robustness, and maintainability of PECS at different levels of complexity.

Download or read book Gallium Nitride Power Devices written by Hongyu Yu and published by CRC Press. This book was released on 2017-07-06 with total page 301 pages. Available in PDF, EPUB and Kindle. Book excerpt: GaN is considered the most promising material candidate in next-generation power device applications, owing to its unique material properties, for example, bandgap, high breakdown field, and high electron mobility. Therefore, GaN power device technologies are listed as the top priority to be developed in many countries, including the United States, the European Union, Japan, and China. This book presents a comprehensive overview of GaN power device technologies, for example, material growth, property analysis, device structure design, fabrication process, reliability, failure analysis, and packaging. It provides useful information to both students and researchers in academic and related industries working on GaN power devices. GaN wafer growth technology is from Enkris Semiconductor, currently one of the leading players in commercial GaN wafers. Chapters 3 and 7, on the GaN transistor fabrication process and GaN vertical power devices, are edited by Dr. Zhihong Liu, who has been working on GaN devices for more than ten years. Chapters 2 and 5, on the characteristics of polarization effects and the original demonstration of AlGaN/GaN heterojunction field-effect transistors, are written by researchers from Southwest Jiaotong University. Chapters 6, 8, and 9, on surface passivation, reliability, and package technologies, are edited by a group of researchers from the Southern University of Science and Technology of China.

Download or read book Effects of Gate Stress and Parasitic Package Inductance on the Reliability of GaN HEMTs written by Cheikh Abdoulahi Tine and published by . This book was released on 2017 with total page 66 pages. Available in PDF, EPUB and Kindle. Book excerpt: Recent advances in the development of gallium nitride (GaN) high electron mobility transistor (HEMT) have shown promising results in the application of high frequency power conversion techniques. GaN transistors are emerging as a credible alternative to silicon (Si) devices in multiple power conversion applications. This is mainly because the characteristics of GaN offer higher electron mobility, electron velocity, and higher breakdown voltage compared to (Si) devices. In spite of the promising attributes offered by GaN devices, significant technological readiness level challenges remain, in order for the technology to be adopted pervasively into the market. These challenges relate to the reliability of the material both at the device-physics level, and at the circuit-implementation level. This thesis presents detailed studies on some of the circuit-level reliability phenomena affecting GaN technology. These studies will offer a better understanding of the limitations associated with GaN so that the technology's beneficial aspects can be leveraged. The first reliability investigation performed was related to a comparison of two 600 V GaN HEMTs based on the same die, however packaged in two different configurations. In order to characterize the performance of the GaN HEMT, a realistic behavioral simulation model was developed in this thesis. The model takes into consideration both the static and dynamic characteristics of the HEMT including drain current variations with respect to gate voltage and drain voltage, ON resistance, intrinsic capacitances, and reverse recovery current and charge. The model was also integrated with values for the per-terminal parasitic package inductances. These values were obtained through empirical measurement. The modeled transistor was then simulated in a converter to analyze the overall performance of the system. Experimental results verified the results obtained by the model. This study thus presents a framework to project and assess the effect of each parasitic inductance on the performance of next generation GaN devices. In the second reliability study, the effect of gate-stress on the performance of normally-off GaN HEMT devices in a boost converter was investigated. The converter's efficiency, output voltage stability, and gate current were evaluated in order to scrutinize the failure mechanisms of pGaN gated lateral GaN devices under high gate stress. It was observed that the transient overshoot of the gate voltage during turn-on becomes switching frequency-dependent once the device has suffered sufficient degradation, leading to a marked decline in converter performance. This observation has not been reported in the previous literature. This improved understanding may allow mitigation of degradation mechanisms in GaN at the fabrication, packaging, and circuit implementation level. The results of this thesis are beneficial in two ways. First it offers insights into the safe and reliable implementation of GaN devices at the circuits-level, thus obviating the need to trade device performance for device safety. Secondly, the gate-stressing investigation unveils degradation characteristics that are of critical importance to the design and fabrication of next generation GaN devices.

Download or read book Modern Power Electronic Devices written by Francesco Iannuzzo and published by Energy Engineering. This book was released on 2020-10 with total page 504 pages. Available in PDF, EPUB and Kindle. Book excerpt: Power devices are key to modern power systems, performing functions such as inverting and changing voltages, buffering and switching. Following a device-centric approach, this book covers power electronic applications, semiconductor physics, materials science, application engineering, and key technologies such as MOSFET, IGBT and WBG.

Download or read book Reliability Evaluation of Power Devices for High Performance Power Conversion written by Chi Xu and published by . This book was released on 2021 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: The reliability of power devices becomes significantly important due to the extensive deployment of power electronic systems, especially in industries associated with mission and safety critical products, such as photovoltaic power stations, electric transportation systems. The failure of devices causes unexpected power outages and catastrophic faults. The increasing demand for high power density and high efficiency drives the adoption of wide bandgap (WBG) devices and power integration. Gallium Nitride (GaN) devices, as one type of WBG devices, is favorable due to the lower specific on-state resistance and smaller capacitance, which reduce both the conduction and switching loss and achieve high efficiency. However, as a newly developed device, GaN devices' reliability still requires comprehensive assessments. To fully understand GaN devices' robustness, one of the commonly used methods, the DC power cycling test, is conducted to detect the weak points of the devices and identify aging precursors for lifetime estimation. Besides, due to the unique structure and material property, GaN devices suffer dynamic on-state resistance and threshold voltage shift under high voltage stress and hard switching transient, which requires an extended stress profile for thorough reliability evaluation. Therefore, an AC power cycling test covering both high voltage stress and various switching transients is developed to mimic real operations for the comprehensive study of GaN devices' reliability. Besides, power integration is quite attractive at low power levels using processes that are compatible with the standard (Complementary Metal-Oxide-Semiconductor) CMOS process. With the increase in power rating and faster switching speed, the voltage overshoot on the drain-source terminals during the turn-off transient may push the devices into the avalanche region, which may damage the device and cause power converter malfunctions. Hence, it is necessary to investigate the devices' robustness against such repetitive strikes. For this purpose, a high-resolution and cost-effective nanosecond current pulse generator (CPG) is designed to inject a current with adjustable magnitude and duration into the device, which can charge the drain-source voltage up to the avalanche voltage under different stress conditions. By using this test setup, a commercial (Metal-Oxide-Semiconductor FieldEffect Transistor) MOSFET is firstly stressed under both long and short pulse durations. The results reveal different degradation and failure mechanisms under different stress conditions. Due to the importance of a large dataset in reliability studies and validation of power devices, a fully modular and scalable test bench is designed based on the proposed CPG, which allows easy maintenance and seamless capacity expansion. Finally, customized (Laterally-Diffused MetalOxide Semiconductor) LDMOS devices are designed to investigate the effect of different chip layouts over the robustness under avalanche conditions.

Download or read book Gallium Nitride And Silicon Carbide Power Devices written by B Jayant Baliga and published by World Scientific Publishing Company. This book was released on 2016-12-12 with total page 592 pages. Available in PDF, EPUB and Kindle. Book excerpt: During the last 30 years, significant progress has been made to improve our understanding of gallium nitride and silicon carbide device structures, resulting in experimental demonstration of their enhanced performances for power electronic systems. Gallium nitride power devices made by the growth of the material on silicon substrates have gained a lot of interest. Power device products made from these materials have become available during the last five years from many companies.This comprehensive book discusses the physics of operation and design of gallium nitride and silicon carbide power devices. It can be used as a reference by practicing engineers in the power electronics industry and as a textbook for a power device or power electronics course in universities.

Download or read book ReliabilityStudy Of Power Gallium Nitride Transistors written by and published by Marcon Denis. This book was released on with total page 229 pages. Available in PDF, EPUB and Kindle. Book excerpt: