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Book Reliability and Failure Analysis of Bipolar Junction Transistor

Download or read book Reliability and Failure Analysis of Bipolar Junction Transistor written by Ching Yit Lim and published by . This book was released on 2008 with total page 69 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book A Noise Study of Bipolar Junction Transistor Reliability

Download or read book A Noise Study of Bipolar Junction Transistor Reliability written by Chih-Chieh Jack Sun and published by . This book was released on 1993 with total page 352 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Intelligent Reliability Analysis Using MATLAB and AI

Download or read book Intelligent Reliability Analysis Using MATLAB and AI written by Dr. Cherry Bhargava and published by BPB Publications. This book was released on 2021-06-21 with total page 204 pages. Available in PDF, EPUB and Kindle. Book excerpt: How to minimize the global problem of e-waste KEY FEATURES ● Explore core concepts of Reliability Analysis, various smart models, different electronic components, and practical use of MATLAB. ● Cutting edge coverage on building intelligent systems for reliability analysis. ● Includes numerous techniques and methods to identify failure and reliability parameters. DESCRIPTION Intelligent Reliability Analysis using MATLAB and AI explains a roadmap to analyze and predict various electronic components’ future life and performance reliability. Deeply narrated and authored by reliability experts, this book empowers the reader to deepen their understanding of reliability identification, its significance, preventive measures, and various techniques. The book teaches how to predict the residual lifetime of active and passive components using an interesting use case on electronic waste. The book will demonstrate how the capacity of re-usability of electronic components can benefit the consumer to reuse the same component, with the confidence of successful operations. It lists key attributes and ways to design experiments using Taguchi’s approach, based on various acceleration factors. This book makes it easier for readers to understand reliability modeling of active and passive components using the Artificial Neural Network, Fuzzy Logic, Adaptive Neuro-Fuzzy Inference System (ANFIS). The book keeps you engaged with a systematic and detailed explanation of step-wise MATLAB-based implementation of electronic components. These explanations and illustrations will help the readers to predict fault and failure well before time. WHAT YOU WILL LEARN ● Optimize various acceleration factors for exploring the residual life of components experimentally. ● Design an intelligent model to predict the upcoming faults and failures of electronic components and make provision for timely replacement of the fault components. ● Design experiments using Taguchi’s approach. ● Understand reliability modeling of active and passive components using the Artificial Neural Network and Fuzzy Logic. WHO THIS BOOK IS FOR This book is for current and aspiring emerging tech professionals, researchers, students, and anyone who wishes to understand and diagnose the product life of electronic components using the power of artificial intelligence and various experimental techniques. TABLE OF CONTENTS 1. RELIABILITY FUNDAMENTALS 2. RELIABILITY MEASURES 3. REMAINING USEFUL LIFETIME ESTIMATION TECHNIQUES 4. INTELLIGENT MODELS FOR RELIABILITY PREDICTION 5. ACCELERATED LIFE TESTING 6. EXPERIMENTAL TESTING OF ACTIVE AND PASSIVE COMPONENTS 7. INTELLIGENT MODELING FOR RELIABILITY ASSESSMENT USING MATLAB

Book ESD

    ESD

    Book Details:
  • Author : Steven H. Voldman
  • Publisher : John Wiley & Sons
  • Release : 2015-04-24
  • ISBN : 1118954483
  • Pages : 565 pages

Download or read book ESD written by Steven H. Voldman and published by John Wiley & Sons. This book was released on 2015-04-24 with total page 565 pages. Available in PDF, EPUB and Kindle. Book excerpt: ESD: Circuits and Devices 2nd Edition provides a clear picture of layout and design of digital, analog, radio frequency (RF) and power applications for protection from electrostatic discharge (ESD), electrical overstress (EOS), and latchup phenomena from a generalist perspective and design synthesis practices providing optimum solutions in advanced technologies. New features in the 2nd edition: Expanded treatment of ESD and analog design of passive devices of resistors, capacitors, inductors, and active devices of diodes, bipolar junction transistors, MOSFETs, and FINFETs. Increased focus on ESD power clamps for power rails for CMOS, Bipolar, and BiCMOS. Co-synthesizing of semiconductor chip architecture and floor planning with ESD design practices for analog, and mixed signal applications Illustrates the influence of analog design practices on ESD design circuitry, from integration, synthesis and layout, to symmetry, matching, inter-digitation, and common centroid techniques. Increased emphasis on system-level testing conforming to IEC 61000-4-2 and IEC 61000-4-5. Improved coverage of low-capacitance ESD, scaling of devices and oxide scaling challenges. ESD: Circuits and Devices 2nd Edition is an essential reference to ESD, circuit & semiconductor engineers and quality, reliability &analysis engineers. It is also useful for graduate and undergraduate students in electrical engineering, semiconductor sciences, microelectronics and IC design.

Book Reliability of High Temperature Electronics

Download or read book Reliability of High Temperature Electronics written by A. Christou and published by RIAC. This book was released on 1996 with total page 392 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Microcircuit Reliability Bibliography

Download or read book Microcircuit Reliability Bibliography written by and published by . This book was released on 1978 with total page 412 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book The ESD Handbook

Download or read book The ESD Handbook written by Steven H. Voldman and published by John Wiley & Sons. This book was released on 2021-04-12 with total page 1172 pages. Available in PDF, EPUB and Kindle. Book excerpt: A practical and comprehensive reference that explores Electrostatic Discharge (ESD) in semiconductor components and electronic systems The ESD Handbook offers a comprehensive reference that explores topics relevant to ESD design in semiconductor components and explores ESD in various systems. Electrostatic discharge is a common problem in the semiconductor environment and this reference fills a gap in the literature by discussing ESD protection. Written by a noted expert on the topic, the text offers a topic-by-topic reference that includes illustrative figures, discussions, and drawings. The handbook covers a wide-range of topics including ESD in manufacturing (garments, wrist straps, and shoes); ESD Testing; ESD device physics; ESD semiconductor process effects; ESD failure mechanisms; ESD circuits in different technologies (CMOS, Bipolar, etc.); ESD circuit types (Pin, Power, Pin-to-Pin, etc.); and much more. In addition, the text includes a glossary, index, tables, illustrations, and a variety of case studies. Contains a well-organized reference that provides a quick review on a range of ESD topics Fills the gap in the current literature by providing information from purely scientific and physical aspects to practical applications Offers information in clear and accessible terms Written by the accomplished author of the popular ESD book series Written for technicians, operators, engineers, circuit designers, and failure analysis engineers, The ESD Handbook contains an accessible reference to ESD design and ESD systems.

Book Component Reliability for Electronic Systems

Download or read book Component Reliability for Electronic Systems written by Titu I. Băjenescu and published by Artech House. This book was released on 2010 with total page 706 pages. Available in PDF, EPUB and Kindle. Book excerpt: The main reason for the premature breakdown of today's electronic products (computers, cars, tools, appliances, etc.) is the failure of the components used to build these products. Today professionals are looking for effective ways to minimize the degradation of electronic components to help ensure longer-lasting, more technically sound products and systems. This practical book offers engineers specific guidance on how to design more reliable components and build more reliable electronic systems. Professionals learn how to optimize a virtual component prototype, accurately monitor product reliability during the entire production process, and add the burn-in and selection procedures that are the most appropriate for the intended applications. Moreover, the book helps system designers ensure that all components are correctly applied, margins are adequate, wear-out failure modes are prevented during the expected duration of life, and system interfaces cannot lead to failure.

Book Failure Analysis

Download or read book Failure Analysis written by Marius Bazu and published by John Wiley & Sons. This book was released on 2011-03-08 with total page 372 pages. Available in PDF, EPUB and Kindle. Book excerpt: Failure analysis is the preferred method to investigate product or process reliability and to ensure optimum performance of electrical components and systems. The physics-of-failure approach is the only internationally accepted solution for continuously improving the reliability of materials, devices and processes. The models have been developed from the physical and chemical phenomena that are responsible for degradation or failure of electronic components and materials and now replace popular distribution models for failure mechanisms such as Weibull or lognormal. Reliability engineers need practical orientation around the complex procedures involved in failure analysis. This guide acts as a tool for all advanced techniques, their benefits and vital aspects of their use in a reliability programme. Using twelve complex case studies, the authors explain why failure analysis should be used with electronic components, when implementation is appropriate and methods for its successful use. Inside you will find detailed coverage on: a synergistic approach to failure modes and mechanisms, along with reliability physics and the failure analysis of materials, emphasizing the vital importance of cooperation between a product development team involved the reasons why failure analysis is an important tool for improving yield and reliability by corrective actions the design stage, highlighting the ‘concurrent engineering' approach and DfR (Design for Reliability) failure analysis during fabrication, covering reliability monitoring, process monitors and package reliability reliability resting after fabrication, including reliability assessment at this stage and corrective actions a large variety of methods, such as electrical methods, thermal methods, optical methods, electron microscopy, mechanical methods, X-Ray methods, spectroscopic, acoustical, and laser methods new challenges in reliability testing, such as its use in microsystems and nanostructures This practical yet comprehensive reference is useful for manufacturers and engineers involved in the design, fabrication and testing of electronic components, devices, ICs and electronic systems, as well as for users of components in complex systems wanting to discover the roots of the reliability flaws for their products.

Book Semiconductor Reliability

Download or read book Semiconductor Reliability written by John E. Shwop and published by . This book was released on 1961 with total page 332 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Reliability Prediction and Testing Textbook

Download or read book Reliability Prediction and Testing Textbook written by Lev M. Klyatis and published by John Wiley & Sons. This book was released on 2018-07-12 with total page 289 pages. Available in PDF, EPUB and Kindle. Book excerpt: This textbook reviews the methodologies of reliability prediction as currently used in industries such as electronics, automotive, aircraft, aerospace, off-highway, farm machinery, and others. It then discusses why these are not successful; and, presents methods developed by the authors for obtaining accurate information for successful prediction. The approach is founded on approaches that accurately duplicate the real world use of the product. Their approach is based on two fundamental components needed for successful reliability prediction; first, the methodology necessary; and, second, use of accelerated reliability and durability testing as a source of the necessary data. Applicable to all areas of engineering, this textbook details the newest techniques and tools to achieve successful reliabilityprediction and testing. It demonstrates practical examples of the implementation of the approaches described. This book is a tool for engineers, managers, researchers, in industry, teachers, and students. The reader will learn the importance of the interactions of the influencing factors and the interconnections of safety and human factors in product prediction and testing.

Book Discrete Semiconductor Reliability Transistor Diode Data  Winter 79 80

Download or read book Discrete Semiconductor Reliability Transistor Diode Data Winter 79 80 written by Joseph Vincent Beasock and published by . This book was released on 1979 with total page 417 pages. Available in PDF, EPUB and Kindle. Book excerpt: This Discrete Semiconductor Reliability compendium contains failure rates on transistors and diodes from actual field use conditions, in-house checkout and reliability tests performed at the equipment level. Generic part-type failure rate summaries and a reliability data tabulation by E.I.A.-registered part number are presented. The failures reported are described in a separate section which includes detailed failure analysis information.

Book Reliability Study of InGaP GaAs Heterojunction Bipolar Transistor MMIC Technology by Characterization  Modeling and Simulation

Download or read book Reliability Study of InGaP GaAs Heterojunction Bipolar Transistor MMIC Technology by Characterization Modeling and Simulation written by Xiang Liu and published by . This book was released on 2011 with total page 88 pages. Available in PDF, EPUB and Kindle. Book excerpt: Recent years have shown real advances of microwave monolithic integrated circuits (MMICs) for millimeter-wave frequency systems, such as wireless communication, advanced imaging, remote sensing and automotive radar systems, as MMICs can provide the size, weight and performance required for these systems. Traditionally, GaAs pseudomorphic high electron mobility transistor (pHEMT) or InP based MMIC technology has dominated in millimeter-wave frequency applications because of their high f[subscript T] and f[subscript max] as well as their superior noise performance. But these technologies are very expensive. Thus, for low cost and high performance applications, InGaP/GaAs heterojunction bipolar transistors (HBTs) are quickly becoming the preferred technology to be used due to their inherently excellent characteristics. These features, together with the need for only one power supply to bias the device, make InGaP/GaAs HBTs very attractive for the design of high performance fully integrated MMICs. With the smaller dimensions for improving speed and functionality of InGaP/GaAs HBTs, which dissipate large amount of power and result in heat flux accumulated in the device junction, technology reliability issues are the first concern for the commercialization. As the thermally triggered instabilities often seen in InGaP/GaAs HBTs, a carefully derived technique to define the stress conditions of accelerated life test has been employed in our study to acquire post-stress device characteristics for the projection of long-term device performance degradation pattern. To identify the possible origins of the post-stress device behaviors observed experimentally, a two dimensional (2-D) TCAD numerical device simulation has been carried out. Using this approach, it is suggested that the acceptor-type trapping states located in the emitter bulk are responsible for the commonly seen post-stress base current instability over the moderate base-emitter voltage region. HBT-based MMIC performance is very sensitive to the variation of core device characteristics and the reliability issues put the limit on its radio frequency (RF) behaviors. While many researchers have reported the observed stress-induced degradations of GaAs HBT characteristics, there has been little published data on the full understanding of stress impact on the GaAs HBT-based MMICs. If care is not taken to understand this issue, stress-induced degradation paths can lead to built-in circuit failure during regular operations. However, detection of this failure may be difficult due to the circuit complexity and lead to erroneous data or output conditions. Thus, a practical and analytical methodology has been developed to predict the stress impacts on HBT-based MMICs. It provides a quick way and guidance for the RF design engineer to evaluate the circuit performance with reliability considerations. Using the present existing EDA tools (Cadance SpectreRF and Agilent ADS) with the extracted pre- and post-stress transistor models, the electrothermal stress effects on InGaP/GaAs HBT-based RF building blocks including power amplifier (PA), low-noise amplifier (LNA) and oscillator have been systematically evaluated. This provides a potential way for the RF/microwave industry to save tens of millions of dollars annually in testing costs. The world now stands at the threshold of the age of advanced GaAs HBT MMIC technology and researchers have been exploring here for years. The reliability of GaAs HBT technology is no longer the post-design evaluation, but the pre-design consideration. The successful and fruitful results of this dissertation provide methods and guidance for the RF designers to achieve more reliable RF circuits with advanced GaAs HBT technology in the future.

Book Scientific and Technical Aerospace Reports

Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1994 with total page 836 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Automotive Electronics Reliability

Download or read book Automotive Electronics Reliability written by Ronald K Jurgen and published by SAE International. This book was released on 2010-08-10 with total page 377 pages. Available in PDF, EPUB and Kindle. Book excerpt: Vehicle reliability problems continue to be the news because of major vehicle recalls from several manufacturers. This book includes 40 SAE technical papers, published from 2007 through 2010, that describe the latest research on automotive electronics reliability technology. This book will help engineers and researchers focus on the design strategies being used to minimize electronics reliability problems, and how to test and verify those strategies. After an overview of durability, risk assessment, and failure mechanisms, this book focuses on state-of-the-art techniques for reliability-based design, and reliability testing and verification. Topics include: powertrain control monitoring distributed automotive embedded systems model-based design x-by-wire systems battery durability design verification fault tree analysis The book also includes editor Ronald K. Jurgen’s introduction ,“Striving for Maximum Reliability in a Highly Complex Electronic Environment”, and a concluding section on the future of electronics reliability, including networking technology, domain control units, the use of AUTOSAR, and embedded software.

Book Failure Analysis of Hot Electron Effect on Power Rf N Ldmos Transistor

Download or read book Failure Analysis of Hot Electron Effect on Power Rf N Ldmos Transistor written by Mohamed Ali Bela D and published by LAP Lambert Academic Publishing. This book was released on 2012-07 with total page 76 pages. Available in PDF, EPUB and Kindle. Book excerpt: Current problems in electronics for manufacturers or users are to determine the lifetime and estimate the reliability of device or system. As well improve their performance and quality. This book presents a synthesis of Hot-Electron effects on power RF LDMOS performances, after accelerated ageing tests. This can modify and degrade transistor physical and electrical behaviour. The temperature can limit the lifetime of semiconductors and plays an essential part in the degradation mechanisms. An electric characterization (IC-CAP) has been made, and a thermoelectric model ADS has been implemented. This is used as the reliability tool (parameters extraction) in order to quantify the parameter shift. We have pointed out the relation between the ageing tests and the hot carrier degradation in RF LDMOS, and its effect on the electric performances. To understanding of the degradation physical phenomena brought into play in the structure, we used a physical simulation 2-D (Atlas) to con rm these phenomena. Finally, the work demonstrates that the degradation mechanism of power RF LDMOS is the hot carrier injection phenomenon in the already existing oxide traps and/or in the Si/SiO2 interface."

Book Discrete Semiconductor Reliability  Transistor diode Data

Download or read book Discrete Semiconductor Reliability Transistor diode Data written by Reliability Analysis Center (U.S.) and published by . This book was released on 1976 with total page 172 pages. Available in PDF, EPUB and Kindle. Book excerpt: