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Book Reduction of Radiation Effects in Metal insulator Semiconductor Structures

Download or read book Reduction of Radiation Effects in Metal insulator Semiconductor Structures written by A. G. Holmes-Siedle and published by . This book was released on 1973 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Radiation Effects in Advanced Semiconductor Materials and Devices

Download or read book Radiation Effects in Advanced Semiconductor Materials and Devices written by C. Claeys and published by Springer Science & Business Media. This book was released on 2002-08-21 with total page 440 pages. Available in PDF, EPUB and Kindle. Book excerpt: This wide-ranging book summarizes the current knowledge of radiation defects in semiconductors, outlining the shortcomings of present experimental and modelling techniques and giving an outlook on future developments. It also provides information on the application of sensors in nuclear power plants.

Book Tunnelling in Metal insulator semiconductor Structures

Download or read book Tunnelling in Metal insulator semiconductor Structures written by H. C. Card and published by . This book was released on 1971 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Scientific and Technical Aerospace Reports

Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on with total page 994 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Science and Technology of Semiconductor On Insulator Structures and Devices Operating in a Harsh Environment

Download or read book Science and Technology of Semiconductor On Insulator Structures and Devices Operating in a Harsh Environment written by Denis Flandre and published by Springer Science & Business Media. This book was released on 2005-02-15 with total page 364 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book collects the papers presented during NATO Advanced Research Workshop "Science and technology of Semiconductor on Insulator (SOI) structures and devices operating in a harsh environment" held in Kiev 26-30 April 2004. The volume contains both reviews from invited speakers and selected papers presenting major innovations in SOI materials and devices. Particular attention is paid to the reliability of SOI structures operated under harsh conditions. In the first part of the book dealing with SOI material technology, the evolution of SOI materials, achievements in the main standard technologies as Smart Cut, SIMOX, porous silicon as well as methods to create more exotic structures are described. The second part of the book covers the reliability aspect of SOI devices operating in a harsh environment: high and low temperatures, high voltages, with a focus on radiation effects and characterization of these devices. Third part of the book overviews novel devices and sensors opportunities for such conditions and the closes with papers discussing the perspectives of SOI scaling to nano devices.

Book Nuclear Science Abstracts

Download or read book Nuclear Science Abstracts written by and published by . This book was released on 1976 with total page 658 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book A Study of Thin Film Metal Insulator semiconductor Structures

Download or read book A Study of Thin Film Metal Insulator semiconductor Structures written by Steven David Mittleman and published by . This book was released on 1966 with total page 90 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book New Insulators Devices and Radiation Effects

Download or read book New Insulators Devices and Radiation Effects written by and published by Elsevier. This book was released on 1999-02-11 with total page 967 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon technology today forms the basis of a world-wide, multi-billion dollar component industry. The reason for this expansion can be found not only in the physical properties of silicon but also in the unique properties of the silicon-silicon dioxide interface. However, silicon devices are still subject to undesired electrical phenomena called "instabilities". These are due mostly to the imperfect nature of the insulators used, to the not-so-perfect silicon-insulator interface and to the generation of defects and ionization phenomena caused by radiation. The problem of instabilities is addressed in this volume, the third of this book series. Vol.3 updates and supplements the material presented in the previous two volumes, and devotes five chapters to the problems of radiation-matter and radiation-device interactions. The volume will aid circuit manufacturers and circuit users alike to relate unstable electrical parameters and characteristics to the presence of physical defects and impurities or to the radiation environment which caused them.

Book The Fabrication and Experimental Analysis of Metal Insulator Semiconductor Devices for Radiation Vulnerability Studies

Download or read book The Fabrication and Experimental Analysis of Metal Insulator Semiconductor Devices for Radiation Vulnerability Studies written by T. A. Williamson and published by . This book was released on 1971 with total page 247 pages. Available in PDF, EPUB and Kindle. Book excerpt: The report discusses the following: The insulated gate field effect transistor (IGFET); Nuclear radiation effects on the IGFET; The fabrication of metal-insulator-silicon (MIS) capacitors; Analysis of the MIS capacitor; Testing of experimental devices, and Analysis of the experimental data.

Book Effects of Radiation on Semiconductors

Download or read book Effects of Radiation on Semiconductors written by Viktor S. Vavilov and published by Springer. This book was released on 2013-12-14 with total page 235 pages. Available in PDF, EPUB and Kindle. Book excerpt: The effects of electromagnetic radiation and high-energy par ticles on semiconductors can be divided into two main processes: (a) the excitation of electrons (the special case is internal ioniza tion, i. e. , the generation of excess charge carriers); and(b) dis turbance of the periodic structure of the crystal, i. e. , the forma tion of "structural radiation defects. " Naturally, investigations of the effects of radiation on semiconductors cannot be considered in isolation. Thus, for example, the problern of "radiation de fects" is part of the generalproblern of crystal lattice defects and the influence of such defects on the processes occurring in semi conductors. The same is true of photoelectric and similar phe nomena where the action of the radiation is only the start of a complex chain of nonequilibrium electronprocesses. Nevertheless, particularly from the point of view of the experimental physicist, the radiation effects discussed in the present book have inter esting features: several types of radiation may produce the same resul t (for example, ionization by photons and by charged particles) or one type of radiation may produce several effects (ionization and radiation -defect formation). The aim of the author was to consider the most typical prob lems. The subjects discussed differ widely from one another in the extent to which they have been investigated.

Book Numerical Analysis of Metal insulator semiconductor Structure Including the Effects of Surface States and Backside Ohmic Contact

Download or read book Numerical Analysis of Metal insulator semiconductor Structure Including the Effects of Surface States and Backside Ohmic Contact written by Fariborz Ghoorkhanian and published by . This book was released on 1987 with total page 290 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Advances in Cryptology     EUROCRYPT  87

Download or read book Advances in Cryptology EUROCRYPT 87 written by David Chaum and published by Springer. This book was released on 2003-05-16 with total page 290 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book contains the proceedings of the EUROCRYPT '87 conference, a workshop on theory and applications of cryptographic techniques held at Amsterdam, April 1987. 26 papers were selected from over twice that number submitted to the program committee. The authors come from Europe, North America, and Japan and represent some of the leading research groups working in the fields of cryptography and data security. The subjects covered include sequences and linear complexity; hardware considerations, including random sources, physical security, and cryptographic algorithm implementation; topics in public key cryptography; authentication and secure transactions; hash functions and signatures; and the theory and application of symmetric ciphers.

Book Scientific and Technical Aerospace Reports

Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1989 with total page 1148 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Ionizing Radiation Effects in MOS Devices and Circuits

Download or read book Ionizing Radiation Effects in MOS Devices and Circuits written by T. P. Ma and published by John Wiley & Sons. This book was released on 1989-04-18 with total page 616 pages. Available in PDF, EPUB and Kindle. Book excerpt: The first comprehensive overview describing the effects of ionizing radiation on MOS devices, as well as how to design, fabricate, and test integrated circuits intended for use in a radiation environment. Also addresses process-induced radiation effects in the fabrication of high-density circuits. Reviews the history of radiation-hard technology, providing background information for those new to the field. Includes a comprehensive review of the literature and an annotated listing of research activities in radiation-hardness research.

Book The Effects of Electron and Hole Trapping on the Radiation Hardness of Al2O3 MIS Metal Insulator Semiconductor  Devices

Download or read book The Effects of Electron and Hole Trapping on the Radiation Hardness of Al2O3 MIS Metal Insulator Semiconductor Devices written by Eli Harari and published by . This book was released on 1973 with total page 16 pages. Available in PDF, EPUB and Kindle. Book excerpt: The radiation sensitivity of MIS capacitors with pyrohydrolytic Al2O3 insulators has been investigated for X-irradiation at 300 and 80K. Both X-rays and light of various photon energies were used to vary the populations of electron and hole traps inherent in the 'as prepared' films. The energies of the trapping levels have been determined and the spatial distribution of the electron traps within the oxide estimated. These traps together with an SiO(x) layer at the semiconductor-oxide interface are shown to control the device behavior under ionizing radiation. (Author).