Download or read book Recrystallization Method to Selenization of Thin Film Cu In Ga Se2 for Semiconductor Device Applications written by and published by . This book was released on 1995 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Enhanced Quality Thin Film Cu In Ga Se2 for Semiconductor Device Applications by Vapor Phase Recrystallization written by and published by . This book was released on 1994 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Official Gazette of the United States Patent and Trademark Office written by and published by . This book was released on 1995 with total page 884 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Enhanced Quality Thin Film Cu In Ga Se sub 2 for Semiconductor Device Applications by Vapor phase Recrystallization written by and published by . This book was released on 1994 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Enhanced quality thin films of Cu.sub.w (In, Ga.sub.y)Se.sub.z for semiconductor device applications are fabricated by initially forming a Cu-rich, phase-separated compound mixture comprising Cu(In, Ga):Cu.sub.x Se on a substrate to form a large-grain precursor and then converting the excess Cu.sub.x Se to Cu(In, Ga)Se.sub. 2 by exposing it to an activity of In and/or Ga, either in vapor In and/or Ga form or in solid (In, Ga).sub.y Se.sub.z. Alternatively, the conversion can be made by sequential deposition of In and/or Ga and Se onto the phase-separated precursor. The conversion process is preferably performed in the temperature range of about 300.degree.-600.degree. C., where the Cu(In, Ga)Se.sub. 2 remains solid, while the excess Cu.sub.x Se is in a liquid flux. The characteristic of the resulting Cu.sub.w (In, Ga).sub.y Se.sub.z can be controlled by the temperature. Higher temperatures, such as 500.degree.-600.degree. C., result in a nearly stoichiometric Cu(In, Ga)Se.sub. 2, whereas lower temperatures, such as 300.degree.-400.degree. C., result in a more Cu-poor compound, such as the Cu.sub.z (In, Ga).sub. 4 Se.sub. 7 phase.

Download or read book Intelligent Links 2 written by and published by vabs93. This book was released on with total page 68 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Australian Official Journal of Patents written by and published by . This book was released on 1996 with total page 690 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Processing Approach Towards the Formation of Thin film Cu In Ga Se2 written by and published by . This book was released on 2003 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: A two-stage method of producing thin-films of group IB-IIIA-VIA on a substrate for semiconductor device applications includes a first stage of depositing an amorphous group IB-IIIA-VIA precursor onto an unheated substrate, wherein the precursor contains all of the group IB and group IIIA constituents of the semiconductor thin-film to be produced in the stoichiometric amounts desired for the final product, and a second stage which involves subjecting the precursor to a short thermal treatment at 420.degree. C.-550.degree. C. in a vacuum or under an inert atmosphere to produce a single-phase, group IB-III-VIA film. Preferably the precursor also comprises the group VIA element in the stoichiometric amount desired for the final semiconductor thin-film. The group IB-IIIA-VIA semiconductor films may be, for example, Cu(In, Ga)(Se, S).sub. 2 mixed-metal chalcogenides. The resultant supported group IB-IIIA-VIA semiconductor film is suitable for use in photovoltaic applications.

Download or read book New Deposition Process of Cu In Ga Se2 Thin Films for Solar Cell Applications written by Himal Khatri and published by . This book was released on 2009 with total page 296 pages. Available in PDF, EPUB and Kindle. Book excerpt: Molybdenum (Mo) is currently the most common material used for Cu(In, Ga)Se2 solar cell back contacts. The first objective of this study is to utilize in-situ and ex-situ characterization techniques to investigate the growth, as well as the physical and chemical properties, of Mo thin films deposited by RF magnetron sputtering onto soda-lime glass (SLG) substrates. The effects of the deposition pressure on the nucleation and growth mechanisms that ultimately influence morphology and grain structure have been studied. Correspondence between real time spectroscopic ellipsometry (RTSE), X-ray diffraction (XRD), atomic force microscopy (AFM), and four-point probe resistivity measurements indicate that increasing deposition pressure leads to smaller average grain sizes and higher oxygen content in the Mo thin films. Changes of the material properties were also evaluated by changing RF power. It is observed that higher RF power, results in higher conductivity films. The second and overall objective of this work is to focus on the deposition and characterization of the Cu(In, Ga)Se2 absorber layer using the hybrid co-sputtering and evaporation process, which has potential for commercial PV. Solar cells were completed with a range of elemental compositions in the absorber layer, keeping a constant profile of Ga and varying Cu concentrations. The slightly Cu deficient Cu(In, Ga)Se2 films of band gap ~1.15 eV fabricated by this process consist of a single chalcopyrite phase and device efficiencies up to 12.4% were achieved for the composition ratios (x, y) = (0.30, 0.88). Correspondence between energy dispersive X-ray spectroscopy (EDS), X-ray diffraction, transmission and reflection (T & R), four-point probe resistivity, and current density-voltage (J-V) measurements indicate that increased Cu concentration leads to the incorporation of a secondary phase Cu2-xSe compound in the Cu(In, Ga)Se2 films, which is detrimental to cell performance. The third objective of this work is to evaluate the Cu2-xSe material properties by employing in-situ RTSE, as well as ex-situ SE and various other characterization techniques. SE revealed that the dielectric function spectra of Cu2-xSe evolve with temperature, providing insights into the evolution of transport properties and critical point structures. At room temperature, semi-metallic behavior of Cu2-xSe thin films was revealed by SE and Hall Effect measurements. These characteristics serve as key inputs for optical modeling of complex layer structures of Cu(In, Ga)Se2 films grown by 2- and 3-step processes.

Download or read book Sintering of CU In Ga Se2 Nanocrystal Films for Photovoltaics written by Taylor Bryan Harvey and published by . This book was released on 2014 with total page 256 pages. Available in PDF, EPUB and Kindle. Book excerpt: Low cost solar cells are needed to increase availability and reliability of electricity throughout the world. Spray deposition of Cu(In,Ga)Se2 (CIGS) nanocrystal inks is a promising route to low cost photovoltaics(PVs). CIGS nanocrystal inks have been used to fabricate solar cells with 3.1% power conversion efficiency (PCE) without any heat treatment, but are limited by poor charge transport. Sintering the nanocrystals into a polycrystalline film improves charge transport and device performance. Two sintering methods are investigated here: selenization and photonic curing. The nanocrystal films can be sintered by annealing the films in a Se environment, also known as selenization. The selenized device morphology and efficiency is influenced by the starting nanocrystal composition. A Se/Carbon layer deriving from the organic ligand decreases device efficiency, but is eliminated by annealing the nanocrystal films in Ar before the selenization treatment. In addition to eliminating the Se/Carbon layer, the pre-selenization anneal drives Na from the soda-lime glass substrate into the film and improves grain growth. Devices with efficiencies above 7.0% are fabricated using a multi-step deposition and sintering process. To simplify device fabrication, a single-step, scalable deposition is demonstrated using fully automated, ultrasonic spray coating. The ultrasonic spray deposition is highly sensitive to the nanocrystal ink organic content, and optimization of the nanocrystal synthesis wash procedure leads to highly uniform, reflective nanocrystal films. Devices fabricated from these films achieve 6.6% efficiency after selenization. The use of rapid pulses of broadband light, or photonic curing, is an alternative sintering method that is compatible with roll-to-roll fabrication and does not use high temperature processing. A wide range of pulse energy is used to treat nanocrystal films after spray deposition on three different back contact materials. Nanocrystal dewetting and agglomeration was observed after photonic curing of the films on a Mo contact, but is reduced significantly by using Au or MoSe2/Mo back contacts. Low energy pulses remove the organic capping ligand and bring the nanocrystals into close electrical contact, leading to devices exhibiting multiple exciton generation and extraction. Higher energy pulses sinter the nanocrystal layer and sintered nanocrystal photovoltaic devices are demonstrated.

Download or read book Enhancement of the Deposition Processes of Cu In Ga Se2 and Cds Thin Films Via In situ and Ex situ Measurements for Solar Cell Application written by Vikash Ranjan and published by . This book was released on 2011 with total page 164 pages. Available in PDF, EPUB and Kindle. Book excerpt: Thin films of Cu(In, Ga)Se2 deposited by 1-stage, 2-stage and 3-stage co-evaporation processes result into the highest efficiency solar cells. Controlling the rate and sequences of individual sources during these co-evaporation processes are important for better quality Cu(In, Ga)Se2 absorber layers. At the same time, spectroscopic ellipsometry due to its ex-situ as well as in-situ application is considered as a very powerful tool to understand the material properties as well as to monitor the process. Nevertheless, spectroscopic ellipsometry was not properly utilized until now to characterize Cu(In, Ga)Se2 thin films. In this study, one of our goal is to understand the optical and electrical properties of Cu(In, Ga)Se2 as a function of process and composition. In the first part of this study, we implemented ex-situ spectroscopic ellipsometry (SE) along with other characterization techniques like Secondary ion mass spectroscopy (SIMS), Scanning electron microscopy (SEM), Auger electron spectroscopy (AES), x-ray diffraction (XRD), atomic force microscopy (AFM) etc. to compare Cu(In, Ga)Se2 thin films deposited by the above mentioned three co-evaporation processes. During this study, we were able to use SE to find the thickness, roughness, band gap, Ga grading of the Cu(In, Ga)Se2 deposited by 2-stage and 3-stage process. Finding of SE were correlated by SIMS, AES, SEM etc. In the case of Cu(In, Ga)Se2 deposited by 1-stage process, due to the high surface roughness, we are not able to implement the ex-situ spectroscopic ellipsometry. In the second and third part of this study, real time spectroscopic ellipsometry is implemented to study the material properties of Cu(In, Ga)Se2 thin films as a function of Cu and Ga concentration. Effectively, in a 3-stage co-evaporation process, the composition of the film changes during the process. To monitor and control the composition of Cu(In, Ga)Se2 during the 3-stage process by in-situ ellipsometry, it was necessary to understand the optical properties of Cu(In, Ga)Se2 as a function of Cu atomic percentage (at.%) as well as Ga at.%. Along with this, the inability to implement ex-situ SE for Cu(In, Ga)Se2 thin film motivated us to implement the spectroscopic ellipsometry in real time i.e. during the growth of the film. This in-situ real time application of SE helped us in understanding the micostructural evolution and dependence of the band gap with the Cu atomic percentage (at.%) as well as the Ga at.%. We also used this opportunity to understand the shift in the critical points as a function of temperature for CuInSe2 alloys. Characterization like AES, XRD, AFM etc were performed after the growth at room temperature to corroborate the RTSE findings. In the fourth and last part of this study, the growth of CdS on a Cu(In, Ga)Se2 surface as a function of time was studied using SE as well as AFM. We also used this opportunity to compare the growth of CdS on another substrate (SiO2). Spectroscopic ellipsometry and AFM revealed a quantum confinement effect in the case of CdS on SiO2 whereas no such effect was observed for CdS on Cu(In, Ga)Se2 surface due to the growth of compact CdS layers.

Download or read book Polycrystalline Thin Films Structure Texture Properties and Applications written by and published by . This book was released on 1994 with total page 818 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Polycrystalline Thin Films written by Katayun Barmak and published by . This book was released on 1994 with total page 806 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Electrical Electronics Abstracts written by and published by . This book was released on 1997 with total page 1860 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Photovoltaic Solar Energy written by Angèle Reinders and published by John Wiley & Sons. This book was released on 2017-02-06 with total page 755 pages. Available in PDF, EPUB and Kindle. Book excerpt: Solar PV is now the third most important renewable energy source, after hydro and wind power, in terms of global installed capacity. Bringing together the expertise of international PV specialists Photovoltaic Solar Energy: From Fundamentals to Applications provides a comprehensive and up-to-date account of existing PV technologies in conjunction with an assessment of technological developments. Key features: Written by leading specialists active in concurrent developments in material sciences, solar cell research and application-driven R&D. Provides a basic knowledge base in light, photons and solar irradiance and basic functional principles of PV. Covers characterization techniques, economics and applications of PV such as silicon, thin-film and hybrid solar cells. Presents a compendium of PV technologies including: crystalline silicon technologies; chalcogenide thin film solar cells; thin-film silicon based PV technologies; organic PV and III-Vs; PV concentrator technologies; space technologies and economics, life-cycle and user aspects of PV technologies. Each chapter presents basic principles and formulas as well as major technological developments in a contemporary context with a look at future developments in this rapidly changing field of science and engineering. Ideal for industrial engineers and scientists beginning careers in PV as well as graduate students undertaking PV research and high-level undergraduate students.

Download or read book Chemical Solution Deposition of Functional Oxide Thin Films written by Theodor Schneller and published by Springer Science & Business Media. This book was released on 2014-01-24 with total page 801 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is the first text to cover all aspects of solution processed functional oxide thin-films. Chemical Solution Deposition (CSD) comprises all solution based thin- film deposition techniques, which involve chemical reactions of precursors during the formation of the oxide films, i. e. sol-gel type routes, metallo-organic decomposition routes, hybrid routes, etc. While the development of sol-gel type processes for optical coatings on glass by silicon dioxide and titanium dioxide dates from the mid-20th century, the first CSD derived electronic oxide thin films, such as lead zirconate titanate, were prepared in the 1980’s. Since then CSD has emerged as a highly flexible and cost-effective technique for the fabrication of a very wide variety of functional oxide thin films. Application areas include, for example, integrated dielectric capacitors, ferroelectric random access memories, pyroelectric infrared detectors, piezoelectric micro-electromechanical systems, antireflective coatings, optical filters, conducting-, transparent conducting-, and superconducting layers, luminescent coatings, gas sensors, thin film solid-oxide fuel cells, and photoelectrocatalytic solar cells. In the appendix detailed “cooking recipes” for selected material systems are offered.

Download or read book Advanced Characterization Techniques for Thin Film Solar Cells written by Daniel Abou-Ras and published by John Wiley & Sons. This book was released on 2016-07-13 with total page 760 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book focuses on advanced characterization methods for thin-film solar cells that have proven their relevance both for academic and corporate photovoltaic research and development. After an introduction to thin-film photovoltaics, highly experienced experts report on device and materials characterization methods such as electroluminescence analysis, capacitance spectroscopy, and various microscopy methods. In the final part of the book simulation techniques are presented which are used for ab-initio calculations of relevant semiconductors and for device simulations in 1D, 2D and 3D. Building on a proven concept, this new edition also covers thermography, transient optoelectronic methods, and absorption and photocurrent spectroscopy.

Download or read book Solution Processing of Inorganic Materials written by David Mitzi and published by John Wiley & Sons. This book was released on 2008-12-22 with total page 522 pages. Available in PDF, EPUB and Kindle. Book excerpt: Discover the materials set to revolutionize the electronics industry The search for electronic materials that can be cheaply solution-processed into films, while simultaneously providing quality device characteristics, represents a major challenge for materials scientists. Continuous semiconducting thin films with large carrier mobilities are particularly desirable for high-speed microelectronic applications, potentially providing new opportunities for the development of low-cost, large-area, flexible computing devices, displays, sensors, and solar cells. To date, the majority of solution-processing research has focused on molecular and polymeric organic films. In contrast, this book reviews recent achievements in the search for solution-processed inorganic semiconductors and other critical electronic components. These components offer the potential for better performance and more robust thermal and mechanical stability than comparable organic-based systems. Solution Processing of Inorganic Materials covers everything from the more traditional fields of sol-gel processing and chemical bath deposition to the cutting-edge use of nanomaterials in thin-film deposition. In particular, the book focuses on materials and techniques that are compatible with high-throughput, low-cost, and low-temperature deposition processes such as spin coating, dip coating, printing, and stamping. Throughout the text, illustrations and examples of applications are provided to help the reader fully appreciate the concepts and opportunities involved in this exciting field. In addition to presenting the state-of-the-art research, the book offers extensive background material. As a result, any researcher involved or interested in electronic device fabrication can turn to this book to become fully versed in the solution-processed inorganic materials that are set to revolutionize the electronics industry.