Download or read book Recent Advances in PMOS Negative Bias Temperature Instability written by Souvik Mahapatra and published by Springer Nature. This book was released on 2021-11-25 with total page 322 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book covers advances in Negative Bias Temperature Instability (NBTI) and will prove useful to researchers and professionals in the semiconductor devices areas. NBTI continues to remain as an important reliability issue for CMOS transistors and circuits. Development of NBTI resilient technology relies on utilizing suitable stress conditions, artifact free measurements and accurate physics-based models for the reliable determination of degradation at end-of-life, as well as understanding the process, material and device architectural impacts. This book discusses: Ultra-fast measurements and modelling of parametric drift due to NBTI in different transistor architectures: planar bulk and FDSOI p-MOSFETs, p-FinFETs and GAA-SNS p-FETs, with Silicon and Silicon Germanium channels. BTI Analysis Tool (BAT), a comprehensive physics-based framework, to model the measured time kinetics of parametric drift during and after DC and AC stress, at different stress and recovery biases and temperature, as well as pulse duty cycle and frequency. The Reaction Diffusion (RD) model is used for generated interface traps, Transient Trap Occupancy Model (TTOM) for charge occupancy of the generated interface traps and their contribution, Activated Barrier Double Well Thermionic (ABDWT) model for hole trapping in pre-existing bulk gate insulator traps, and Reaction Diffusion Drift (RDD) model for bulk trap generation in the BAT framework; NBTI parametric drift is due to uncorrelated contributions from the trap generation (interface, bulk) and trapping processes. Analysis and modelling of Nitrogen incorporation into the gate insulator, Germanium incorporation into the channel, and mechanical stress effects due to changes in the transistor layout or device dimensions; similarities and differences of (100) surface dominated planar and GAA MOSFETs and (110) sidewall dominated FinFETs are analysed.

Download or read book Bias Temperature Instability for Devices and Circuits written by Tibor Grasser and published by Springer Science & Business Media. This book was released on 2013-10-22 with total page 805 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides a single-source reference to one of the more challenging reliability issues plaguing modern semiconductor technologies, negative bias temperature instability. Readers will benefit from state-of-the art coverage of research in topics such as time dependent defect spectroscopy, anomalous defect behavior, stochastic modeling with additional metastable states, multiphonon theory, compact modeling with RC ladders and implications on device reliability and lifetime.

Download or read book Fundamentals of Bias Temperature Instability in MOS Transistors written by Souvik Mahapatra and published by Springer. This book was released on 2015-08-05 with total page 282 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book aims to cover different aspects of Bias Temperature Instability (BTI). BTI remains as an important reliability concern for CMOS transistors and circuits. Development of BTI resilient technology relies on utilizing artefact-free stress and measurement methods and suitable physics-based models for accurate determination of degradation at end-of-life and understanding the gate insulator process impact on BTI. This book discusses different ultra-fast characterization techniques for recovery artefact free BTI measurements. It also covers different direct measurements techniques to access pre-existing and newly generated gate insulator traps responsible for BTI. The book provides a consistent physical framework for NBTI and PBTI respectively for p- and n- channel MOSFETs, consisting of trap generation and trapping. A physics-based compact model is presented to estimate measured BTI degradation in planar Si MOSFETs having differently processed SiON and HKMG gate insulators, in planar SiGe MOSFETs and also in Si FinFETs. The contents also include a detailed investigation of the gate insulator process dependence of BTI in differently processed SiON and HKMG MOSFETs. The book then goes on to discuss Reaction-Diffusion (RD) model to estimate generation of new traps for DC and AC NBTI stress and Transient Trap Occupancy Model (TTOM) to estimate charge occupancy of generated traps and their contribution to BTI degradation. Finally, a comprehensive NBTI modeling framework including TTOM enabled RD model and hole trapping to predict time evolution of BTI degradation and recovery during and after DC stress for different stress and recovery biases and temperature, during consecutive arbitrary stress and recovery cycles and during AC stress at different frequency and duty cycle. The contents of this book should prove useful to academia and professionals alike.

Download or read book Recent Advances in Microelectronics Reliability written by Willem Dirk van Driel and published by Springer Nature. This book was released on with total page 405 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book 75th Anniversary of the Transistor written by Arokia Nathan and published by John Wiley & Sons. This book was released on 2023-08-01 with total page 469 pages. Available in PDF, EPUB and Kindle. Book excerpt: 75th Anniversary of the Transistor 75th anniversary commemorative volume reflecting the transistor's development since inception to current state of the art 75th Anniversary of the Transistor is a commemorative anniversary volume to celebrate the invention of the transistor. The anniversary volume was conceived by the IEEE Electron Devices Society (EDS) to provide comprehensive yet compact coverage of the historical perspectives underlying the invention of the transistor and its subsequent evolution into a multitude of integration and manufacturing technologies and applications. The book reflects the transistor's development since inception to the current state of the art that continues to enable scaling to very large-scale integrated circuits of higher functionality and speed. The stages in this evolution covered are in chronological order to reflect historical developments. Narratives and experiences are provided by a select number of venerated industry and academic leaders, and retired veterans, of the semiconductor industry. 75th Anniversary of the Transistor highlights: Historical perspectives of the state-of-the-art pre-solid-state-transistor world (pre-1947) leading to the invention of the transistor Invention of the bipolar junction transistor (BJT) and analytical formulations by Shockley (1948) and their impact on the semiconductor industry Large scale integration, Moore's Law (1965) and transistor scaling (1974), and MOS/LSI, including flash memories — SRAMs, DRAMs (1963), and the Toshiba NAND flash memory (1989) Image sensors (1986), including charge-coupled devices, and related microsensor applications With comprehensive yet succinct and accessible coverage of one of the cornerstones of modern technology, 75th Anniversary of the Transistor is an essential reference for engineers, researchers, and undergraduate students looking for historical perspective from leaders in the field.

Download or read book Reliability Wearout Mechanisms in Advanced CMOS Technologies written by Alvin W. Strong and published by John Wiley & Sons. This book was released on 2009-10-13 with total page 642 pages. Available in PDF, EPUB and Kindle. Book excerpt: This invaluable resource tells the complete story of failure mechanisms—from basic concepts to the tools necessary to conduct reliability tests and analyze the results. Both a text and a reference work for this important area of semiconductor technology, it assumes no reliability education or experience. It also offers the first reference book with all relevant physics, equations, and step-by-step procedures for CMOS technology reliability in one place. Practical appendices provide basic experimental procedures that include experiment design, performing stressing in the laboratory, data analysis, reliability projections, and interpreting projections.

Download or read book Fundamental Issues and Applications of Shock Wave and High Strain Rate Phenomena written by K.P. Staudhammer and published by Elsevier. This book was released on 2001-02-08 with total page 715 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book contains the proceedings of EXPLOMETTM 2000, International Conference on Fundamental Issues and Applications of Shock-Wave and High-Strain-Rate Phenomena, held in Albuquerque, New Mexico, 2000; the fifth in the EXPLOMETTM quinquennial series which began in Albuquerque in 1980. The book is divided into five major sections with a total of 85 chapters. Section I deals with materials issues in shock and high strain rates while Section II covers shock consolidation, reactions, and synthesis. Materials aspects of ballistic and hypervelocity impact are covered in Section III followed by modeling and simulation in Section IV and a range of novel applications of shock and high-strain-rate phenomena in Section V. Like previous conference volumes published in 1980, 1985, and 1995, the current volume includes contributions from fourteen countries outside the United States. As a consequence, it is hoped that this book will serve as a global summary of current issues involving shock and high-strain-rate phenomena as well as a general reference and teaching componant for specializd curricula dealing with these features in a contemporary way. Over the past twenty years, the EXPLOMETTM Conferences have created a family of participants who not only converse every five years but who have developed long-standing interactions and professional relationships which continue to stimulate new concepts and applications particularly rooted in basic materials behavior.

Download or read book Transport Phenomena in Porous Media written by Yasuaki Ichikawa and published by Springer Science & Business Media. This book was released on 2012-02-10 with total page 399 pages. Available in PDF, EPUB and Kindle. Book excerpt: This monograph presents an integrated perspective of the wide range of phenomena and processes applicable to the study of transport of species in porous materials. In order to formulate the entire range of porous media and their uses, this book gives the basics of continuum mechanics, thermodynamics, seepage and consolidation and diffusion, including multiscale homogenization methods. The particular structure of the book has been chosen because it is essential to be aware of the true properties of porous materials particularly in terms of nano, micro and macro mechanisms. This book is of pedagogical and practical importance to the fields covered by civil, environmental, nuclear and petroleum engineering and also in chemical physics and geophysics as it relates to radioactive waste disposal, geotechnical engineering, mining and petroleum engineering and chemical engineering.

Download or read book Photonic Crystals Theory Applications and Fabrication written by Dennis W Prather and published by John Wiley & Sons. This book was released on 2009-05-26 with total page 417 pages. Available in PDF, EPUB and Kindle. Book excerpt: The Only Source You Need for Understanding the Design and Applications of Photonic Crystal-Based Devices This book presents in detail the fundamental theoretical background necessary to understand the unique optical phenomena arising from the crystalline nature of photonic-crystal structures and their application across a range of disciplines. Organized to take readers from basic concepts to more advanced topics, the book covers: Preliminary concepts of electromagnetic waves and periodic media Numerical methods for analyzing photonic-crystal structures Devices and applications based on photonic bandgaps Engineering photonic-crystal dispersion properties Fabrication of two- and three-dimensional photonic crystals The authors assume an elementary knowledge of electromagnetism, vector calculus, Fourier analysis, and complex number analysis. Therefore, the book is appropriate for advanced undergraduate students in physics, applied physics, optics, electronics, and chemical and electrical engineering, as well as graduate students and researchers in these fields.

Download or read book Design and Analysis of Spiral Inductors written by Genemala Haobijam and published by Springer Science & Business Media. This book was released on 2013-09-07 with total page 116 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book addresses the critical challenges faced by the ever-expanding wireless communication market and the increasing frequency of operation due to continuous innovation of high performance integrated passive devices. The challenges like low quality factor, design complexity, manufacturability, processing cost, etc., are studied with examples and specifics. Silicon on-chip inductor was first reported in 1990 by Nguyen and Meyer in a 0.8 μm silicon bipolar complementary metal oxide semiconductor technology (BiCMOS). Since then, there has been an enormous progress in the research on the performance trends, design and optimization, modeling, quality factor enhancement techniques, etc., of spiral inductors and significant results are reported in literature for various applications. This book introduces an efficient method of determining the optimized layout of on chip spiral inductor. The important fundamental tradeoffs of the design like quality factor and area, quality factor and inductance, quality factor and operating frequency, maximum quality factor and the peak frequency is also explored. The authors proposed an algorithm for accurate design and optimization of spiral inductors using a 3D electromagnetic simulator with minimum number of inductor structure simulations and thereby reducing its long computation time. A new multilayer pyramidal symmetric inductor structure is also proposed in this book. Being multilevel, the proposed inductor achieves high inductance to area ratio and hence occupies smaller silicon area.

Download or read book Reliability of High Mobility SiGe Channel MOSFETs for Future CMOS Applications written by Jacopo Franco and published by Springer Science & Business Media. This book was released on 2013-10-19 with total page 203 pages. Available in PDF, EPUB and Kindle. Book excerpt: Due to the ever increasing electric fields in scaled CMOS devices, reliability is becoming a showstopper for further scaled technology nodes. Although several groups have already demonstrated functional Si channel devices with aggressively scaled Equivalent Oxide Thickness (EOT) down to 5Å, a 10 year reliable device operation cannot be guaranteed anymore due to severe Negative Bias Temperature Instability. This book focuses on the reliability of the novel (Si)Ge channel quantum well pMOSFET technology. This technology is being considered for possible implementation in next CMOS technology nodes, thanks to its benefit in terms of carrier mobility and device threshold voltage tuning. We observe that it also opens a degree of freedom for device reliability optimization. By properly tuning the device gate stack, sufficiently reliable ultra-thin EOT devices with a 10 years lifetime at operating conditions are demonstrated. The extensive experimental datasets collected on a variety of processed 300mm wafers and presented here show the reliability improvement to be process - and architecture-independent and, as such, readily transferable to advanced device architectures as Tri-Gate (finFET) devices. We propose a physical model to understand the intrinsically superior reliability of the MOS system consisting of a Ge-based channel and a SiO2/HfO2 dielectric stack. The improved reliability properties here discussed strongly support (Si)Ge technology as a clear frontrunner for future CMOS technology nodes.

Download or read book Advances in Electronic Testing written by Dimitris Gizopoulos and published by Springer Science & Business Media. This book was released on 2006-01-22 with total page 431 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is a new type of edited volume in the Frontiers in Electronic Testing book series devoted to recent advances in electronic circuits testing. The book is a comprehensive elaboration on important topics which capture major research and development efforts today. "Hot" topics of current interest to test technology community have been selected, and the authors are key contributors in the corresponding topics.

Download or read book Defects in Microelectronic Materials and Devices written by Daniel M. Fleetwood and published by CRC Press. This book was released on 2008-11-19 with total page 772 pages. Available in PDF, EPUB and Kindle. Book excerpt: Uncover the Defects that Compromise Performance and ReliabilityAs microelectronics features and devices become smaller and more complex, it is critical that engineers and technologists completely understand how components can be damaged during the increasingly complicated fabrication processes required to produce them.A comprehensive survey of defe

Download or read book Processes and mechanisms of welding residual stress and distortion written by Zhili Feng and published by CRC Press. This book was released on 2005-11-01 with total page 372 pages. Available in PDF, EPUB and Kindle. Book excerpt: As a fabrication technology, welding presents a number of technical challenges to the designer, manufacturer, and end-user of the welded structures. Both weld residual stress and distortion can significantly impair the performance and reliability of the welded structures. They must be properly dealt with during design, fabrication, and in-service use of the welded structures. There have been many significant and exciting developments on the subject in the past ten to fifteen years. Measurement techniques have been improved significantly. More importantly, the development of computational welding mechanics methods has been phenomenal. The progresses in the last decade or so have not only greatly expanded our fundamental understanding of the processes and mechanisms of residual stress and distortion during welding, but also have provided powerful tools to quantitatively determine the detailed residual stress and distortion information for a given welded structure. New techniques for effective residual stress and distortion mitigations and controls have also been applied in different industry sectors. Processes and Mechanisms of Welding Residual Stress and Distortion provides a comprehensive summary on the developments in the subject. It outlines theoretical treatments on heat transfer, solid mechanics and materials behavior that are essential for understanding and determining the welding residual stress and distortion. The approaches for computational methods and analysis methodology are described so that non specialists can follow them. There are chapters devoted to the discussion of various techniques for control and mitigation of residual stress and distortion, and residual stress and distortion results for various typical welded structures are provided. The second half of the book looks at case studies and practical solutions and provides insights into the techniques, challenges, limitations and future trends of each application. This book will not only be useful for advanced analysis of the subject, but also provide sufficient examples and practical solutions for welding engineers. With a panel of leading experts this authoritative book will be a valuable resource for welding engineers and designers as well as academics working in the fields of structural and mechanical engineering.

Download or read book Plasma and Fluid Turbulence written by A. Yoshizawa and published by CRC Press. This book was released on 2002-11-12 with total page 459 pages. Available in PDF, EPUB and Kindle. Book excerpt: Theory and modelling with direct numerical simulation and experimental observations are indispensable in the understanding of the evolution of nature, in this case the theory and modelling of plasma and fluid turbulence. Plasma and Fluid Turbulence: Theory and Modelling explains modelling methodologies in depth with regard to turbulence phenomena a

Download or read book Advanced Circuits for Emerging Technologies written by Krzysztof Iniewski and published by John Wiley & Sons. This book was released on 2012-04-17 with total page 632 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book will address the-state-of-the-art in integrated circuit design in the context of emerging systems. New exciting opportunities in body area networks, wireless communications, data networking, and optical imaging are discussed. Emerging materials that can take system performance beyond standard CMOS, like Silicon on Insulator (SOI), Silicon Germanium (SiGe), and Indium Phosphide (InP) are explored. Three-dimensional (3-D) CMOS integration and co-integration with sensor technology are described as well. The book is a must for anyone serious about circuit design for future technologies. The book is written by top notch international experts in industry and academia. The intended audience is practicing engineers with integrated circuit background. The book will be also used as a recommended reading and supplementary material in graduate course curriculum. Intended audience is professionals working in the integrated circuit design field. Their job titles might be : design engineer, product manager, marketing manager, design team leader, etc. The book will be also used by graduate students. Many of the chapter authors are University Professors.

Download or read book Modulated Temperature Differential Scanning Calorimetry written by Mike Reading and published by Springer Science & Business Media. This book was released on 2006-02-22 with total page 352 pages. Available in PDF, EPUB and Kindle. Book excerpt: MTDSC provides a step-change increase in the power of calorimetry to characterize virtually all polymer systems including curing systems, blends and semicrystalline polymers. It enables hidden transitions to be revealed, miscibility to be accurately assessed, and phases and interfaces in complex blends to be quantified. It also enables crystallinity in complex systems to be measured and provides new insights into melting behaviour. All of this is achieved by a simple modification of conventional DSC. In 1992 a new calorimetric technique was introduced that superimposed a small modulation on top of the conventional linear temperature program typically used in differential scanning calorimetry. This was combined with a method of data analysis that enabled the sample’s response to the linear component of the temperature program to be separated from its response to the periodic component. In this way, for the first time, a signal equivalent to that of conventional DSC was obtained simultaneously with a measure of the sample’s heat capacity from the modulation. The new information this provided sparked a revolution in scanning calorimetry by enabling new insights to be gained into almost all aspects of polymer characteristics. This book provides both a basic and advanced treatment of the theory of the technique followed by a detailed exposition of its application to reacting systems, blends and semicrystalline polymers by the leaders in all of these fields. It is an essential text for anybody interested in calorimetry or polymer characterization, especially if they have found that conventional DSC cannot help them with their problems.