Download or read book Rapid Thermal Processing of Electronic Materials written by Syd R. Wilson and published by Cambridge University Press. This book was released on 2014-06-05 with total page 508 pages. Available in PDF, EPUB and Kindle. Book excerpt: The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.

Download or read book Rapid Thermal Processing written by Richard B. Fair and published by Academic Press. This book was released on 2012-12-02 with total page 441 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is the first definitive book on rapid thermal processing (RTP), an essential namufacturing technology for single-wafer processing in highly controlled environments. Written and edited by nine experts in the field, this book covers a range of topics for academics and engineers alike, moving from basic theory to advanced technology for wafer manufacturing. The book also provides new information on the suitability or RTP for thin film deposition, junction formation, silicides, epitaxy, and in situ processing. Complete discussions on equipment designs and comparisons between RTP and other processing approaches also make this book useful for supplemental information on silicon processing, VLSI processing, and integrated circuit engineering.

Download or read book Rapid Thermal and Integrated Processing written by Mehrdad M. Moslehi and published by . This book was released on 1992 with total page 226 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book GaAs High Speed Devices written by C. Y. Chang and published by John Wiley & Sons. This book was released on 1994-10-28 with total page 632 pages. Available in PDF, EPUB and Kindle. Book excerpt: The performance of high-speed semiconductor devices—the genius driving digital computers, advanced electronic systems for digital signal processing, telecommunication systems, and optoelectronics—is inextricably linked to the unique physical and electrical properties of gallium arsenide. Once viewed as a novel alternative to silicon, gallium arsenide has swiftly moved into the forefront of the leading high-tech industries as an irreplaceable material in component fabrication. GaAs High-Speed Devices provides a comprehensive, state-of-the-science look at the phenomenally expansive range of engineering devices gallium arsenide has made possible—as well as the fabrication methods, operating principles, device models, novel device designs, and the material properties and physics of GaAs that are so keenly integral to their success. In a clear five-part format, the book systematically examines each of these aspects of GaAs device technology, forming the first authoritative study to consider so many important aspects at once and in such detail. Beginning with chapter 2 of part one, the book discusses such basic subjects as gallium arsenide materials and crystal properties, electron energy band structures, hole and electron transport, crystal growth of GaAs from the melt and defect density analysis. Part two describes the fabrication process of gallium arsenide devices and integrated circuits, shedding light, in chapter 3, on epitaxial growth processes, molecular beam epitaxy, and metal organic chemical vapor deposition techniques. Chapter 4 provides an introduction to wafer cleaning techniques and environment control, wet etching methods and chemicals, and dry etching systems, including reactive ion etching, focused ion beam, and laser assisted methods. Chapter 5 provides a clear overview of photolithography and nonoptical lithography techniques that include electron beam, x-ray, and ion beam lithography systems. The advances in fabrication techniques described in previous chapters necessitate an examination of low-dimension device physics, which is carried on in detail in chapter 6 of part three. Part four includes a discussion of innovative device design and operating principles which deepens and elaborates the ideas introduced in chapter 1. Key areas such as metal-semiconductor contact systems, Schottky Barrier and ohmic contact formation and reliability studies are examined in chapter 7. A detailed discussion of metal semiconductor field-effect transistors, the fabrication technology, and models and parameter extraction for device analyses occurs in chapter 8. The fifth part of the book progresses to an up-to-date discussion of heterostructure field-effect (HEMT in chapter 9), potential-effect (HBT in chapter 10), and quantum-effect devices (chapters 11 and 12), all of which are certain to have a major impact on high-speed integrated circuits and optoelectronic integrated circuit (OEIC) applications. Every facet of GaAs device technology is placed firmly in a historical context, allowing readers to see instantly the significant developmental changes that have shaped it. Featuring a look at devices still under development and device structures not yet found in the literature, GaAs High-Speed Devices also provides a valuable glimpse into the newest innovations at the center of the latest GaAs technology. An essential text for electrical engineers, materials scientists, physicists, and students, GaAs High-Speed Devices offers the first comprehensive and up-to-date look at these formidable 21st century tools. The unique physical and electrical properties of gallium arsenide has revolutionized the hardware essential to digital computers, advanced electronic systems for digital signal processing, telecommunication systems, and optoelectronics. GaAs High-Speed Devices provides the first fully comprehensive look at the enormous range of engineering devices gallium arsenide has made possible as well as the backbone of the technology—ication methods, operating principles, and the materials properties and physics of GaAs—device models and novel device designs. Featuring a clear, six-part format, the book covers: GaAs materials and crystal properties Fabrication processes of GaAs devices and integrated circuits Electron beam, x-ray, and ion beam lithography systems Metal-semiconductor contact systems Heterostructure field-effect, potential-effect, and quantum-effect devices GaAs Microwave Monolithic Integrated Circuits and Digital Integrated Circuits In addition, this comprehensive volume places every facet of the technology in an historical context and gives readers an unusual glimpse at devices still under development and device structures not yet found in the literature.

Download or read book Defects in Electronic Materials Volume 104 written by M. Stavola and published by Mrs Proceedings. This book was released on 1988-05-05 with total page 694 pages. Available in PDF, EPUB and Kindle. Book excerpt: The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.

Download or read book Proceedings of First International Conference on Electronic Materials written by Takuo Sugano and published by . This book was released on 1989 with total page 280 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Macro to Microscale Heat Transfer written by D. Y. Tzou and published by John Wiley & Sons. This book was released on 2014-09-18 with total page 576 pages. Available in PDF, EPUB and Kindle. Book excerpt: Physical processes taking place in micro/nanoscale strongly depend on the material types and can be very complicated. Known approaches include kinetic theory and quantum mechanics, non-equilibrium and irreversible thermodynamics, molecular dynamics, and/or fractal theory and fraction model. Due to innately different physical bases employed, different approaches may involve different physical properties in describing micro/nanoscale heat transport. In addition, the parameters involved in different approaches, may not be mutually inclusive. Macro- to Microscale Heat Transfer: The Lagging Behavior, Second Edition continues the well-received concept of thermal lagging through the revolutionary approach that focuses on the finite times required to complete the various physical processes in micro/nanoscale. Different physical processes in heat/mass transport imply different delay times, which are common regardless of the material type. The delay times, termed phase lags, are characteristics of materials. Therefore the dual-phase-lag model developed is able to describe eleven heat transfer models from macro to nanoscale in the same framework of thermal lagging. Recent extensions included are the lagging behavior in mass transport, as well as the nonlocal behavior in space, bearing the same merit of thermal lagging in time, in shrinking the ultrafast response down to the nanoscale. Key features: Takes a unified approach describing heat and mass transport from macro, micro to nanoscale Compares experimental results for model validation Includes easy to follow mathematical formulation Accompanied by a website hosting supporting material Macro- to Microscale Heat Transfer: The Lagging Behavior, Second Edition is a comprehensive reference for researchers and practitioners, and graduate students in mechanical, aerospace, biological and chemical engineering.

Download or read book Silicon Carbide written by Moumita Mukherjee and published by BoD – Books on Demand. This book was released on 2011-10-10 with total page 562 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon Carbide (SiC) and its polytypes, used primarily for grinding and high temperature ceramics, have been a part of human civilization for a long time. The inherent ability of SiC devices to operate with higher efficiency and lower environmental footprint than silicon-based devices at high temperatures and under high voltages pushes SiC on the verge of becoming the material of choice for high power electronics and optoelectronics. What is more important, SiC is emerging to become a template for graphene fabrication, and a material for the next generation of sub-32nm semiconductor devices. It is thus increasingly clear that SiC electronic systems will dominate the new energy and transport technologies of the 21st century. In 21 chapters of the book, special emphasis has been placed on the materials aspects and developments thereof. To that end, about 70% of the book addresses the theory, crystal growth, defects, surface and interface properties, characterization, and processing issues pertaining to SiC. The remaining 30% of the book covers the electronic device aspects of this material. Overall, this book will be valuable as a reference for SiC researchers for a few years to come. This book prestigiously covers our current understanding of SiC as a semiconductor material in electronics. The primary target for the book includes students, researchers, material and chemical engineers, semiconductor manufacturers and professionals who are interested in silicon carbide and its continuing progression.

Download or read book Advances in Rapid Thermal Processing written by Fred Roozeboom and published by The Electrochemical Society. This book was released on 1999 with total page 470 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book SiO2 and Its Interfaces Volume 105 written by S. T. Pantelides and published by Mrs Proceedings. This book was released on 1988-07-21 with total page 360 pages. Available in PDF, EPUB and Kindle. Book excerpt: The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.

Download or read book Interfacial Structure Properties and Design Volume 122 written by M. H. Yoo and published by . This book was released on 1988-12-15 with total page 640 pages. Available in PDF, EPUB and Kindle. Book excerpt: The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.

Download or read book Epitaxy of Semiconductor Layered Structures Volume 102 written by R. T. Tung and published by . This book was released on 1988 with total page 650 pages. Available in PDF, EPUB and Kindle. Book excerpt: The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.

Download or read book Scientific Basis for Nuclear Waste Management XI Volume 112 written by Michael J. Apted and published by . This book was released on 1987 with total page 848 pages. Available in PDF, EPUB and Kindle. Book excerpt: The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.

Download or read book Chemical Perspectives of Microelectronic Materials written by and published by . This book was released on 1990 with total page 626 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book High temperature Ordered Intermetallic Alloys written by and published by . This book was released on 1988 with total page 810 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Biomedical Materials and Devices written by Jacob S. Hanker and published by . This book was released on 1989 with total page 840 pages. Available in PDF, EPUB and Kindle. Book excerpt: Proceedings of a symposium held Nov.-Dec., 1987, Boston, MA. New therapeutic modalities and bioengineering methods and devices for the continuous removal of toxins or pathologic products present in arthritis, atherosclerosis and malignancy are presented, as well as novel monitoring and controlled drug delivery systems and discussions of materials such as blood or plasma substitutes, artificial organs, and bone graft substitutes. Annotation copyrighted by Book News, Inc., Portland, OR

Download or read book Clusters and Cluster assembled Materials written by Robert S. Averback and published by . This book was released on 1991 with total page 794 pages. Available in PDF, EPUB and Kindle. Book excerpt: