Download or read book Rapid thermal Annealing of ion implanted silicon written by Chi-Chien Ho and published by . This book was released on 1986 with total page 186 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Characteristics of Rapid Thermal Annealing in Ion Implanted Silicon written by O. W. Holland and published by . This book was released on 1984 with total page 26 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Physics and modeling of dopant diffusion in ion implanted silicon during rapid thermal annealing of shallow junction written by Tzu-hsin Huang and published by . This book was released on 1994 with total page 296 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Modeling of the dopant diffusion in ion implanted Si during rapid thermal annealing written by Tai Su and published by . This book was released on 1996 with total page 256 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Rapid thermal annealing of silicon ion implanted semi insulating indium phosphide written by Gentry Elizabeth Crook and published by . This book was released on 1986 with total page 76 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Advances in Rapid Thermal Processing written by Fred Roozeboom and published by The Electrochemical Society. This book was released on 1999 with total page 470 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Study on the Rapid Thermal Annealing Process of Low energy Arsenic and Phosphorous Ion implanted Silicon by Reflective Second Harmonic Generation written by Kuang-yao Lo and published by . This book was released on 2005 with total page 16 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Rapid Thermal Processing of Semiconductors written by Victor E. Borisenko and published by Springer Science & Business Media. This book was released on 2013-11-22 with total page 374 pages. Available in PDF, EPUB and Kindle. Book excerpt: Rapid thermal processing has contributed to the development of single wafer cluster processing tools and other innovations in integrated circuit manufacturing environments. Borisenko and Hesketh review theoretical and experimental progress in the field, discussing a wide range of materials, processes, and conditions. They thoroughly cover the work of international investigators in the field.
Download or read book Rapid Thermal Annealing Effects on Gate Oxides of Ion Implanted Devices written by Farzad Hashemi and published by . This book was released on 1987 with total page 264 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Rapid Thermal and Other Short time Processing Technologies II written by Dim-Lee Kwong and published by The Electrochemical Society. This book was released on 2001 with total page 458 pages. Available in PDF, EPUB and Kindle. Book excerpt: "Electronics, Dielectric Science and Technology, and High Temperature Materials Divisions."
Download or read book Physics and modeling of boron diffusion activation and evolution of extended defects and point defects during rapid thermal annealing of ion implanted silicon written by Hiroyuki Kinoshita and published by . This book was released on 1993 with total page 220 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Ion Implantation in Semiconductors written by Susumu Namba and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 716 pages. Available in PDF, EPUB and Kindle. Book excerpt: The technique of ion implantation has become a very useful and stable technique in the field of semiconductor device fabrication. This use of ion implantation is being adopted by industry. Another important application is the fundamental study of the physical properties of materials. The First Conference on Ion Implantation in Semiconductors was held at Thousand Oaks, California in 1970. The second conference in this series was held at Garmish-Partenkirchen, Germany, in 1971. At the third conference, which convened at Yorktown Heights, New York in 1973, the emphasis was broadened to include metals and insulators as well as semiconductors. This scope of the conference was still accepted at the fourth conference which was held at Osaka, Japan, in 1974. A huge number of papers had been submitted to this conference. All papers which were presented at the Fourth International Conference on Ion Implantation in Semiconductors and Other Materials are included in this proceedings. The success of this conference was due to technical presentations and discussions of 224 participants from 14 countries as well as to financial support from many companies in Japan. On behalf of the committee, I wish to thank the authors for their excellent papers and the sponsors for their financial support. The International Committee responsible for advising this conference consisted of B.L. Crowder, J.A. Davies, G. Dearna1ey, F.H. Eisen, Ph. G1otin, T. Itoh, A.U. MacRae, J.W. Mayer, S. Namba, I. Ruge, and F.L. Vook.
Download or read book Rapid Thermal and Integrated Processing written by and published by . This book was released on 1996 with total page 416 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Rapid Thermal Annealing Chemical Vapor Deposition and Integrated Processing Volume 146 written by David Hodul and published by . This book was released on 1989-11-03 with total page 544 pages. Available in PDF, EPUB and Kindle. Book excerpt: The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Download or read book Rapid Thermal Processing and beyond Applications in Semiconductor Processing written by Wielfried Lerch and published by Trans Tech Publications Ltd. This book was released on 2008-03-24 with total page 448 pages. Available in PDF, EPUB and Kindle. Book excerpt: Heat-treatment and thermal annealing are very common processing steps which have been employed during semiconductor manufacturing right from the beginning of integrated circuit technology. In order to minimize undesired diffusion, and other thermal budget-dependent effects, the trend has been to reduce the annealing time sharply by switching from standard furnace batch-processing (involving several hours or even days), to rapid thermal processing involving soaking times of just a few seconds. This transition from thermal equilibrium, to highly non-equilibrium, processing was very challenging and is still a field ripe for further development.
Download or read book Ion Implantation Technology 92 written by D.F. Downey and published by Elsevier. This book was released on 2012-12-02 with total page 716 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ion implantation technology has made a major contribution to the dramatic advances in integrated circuit technology since the early 1970's. The ever-present need for accurate models in ion implanted species will become absolutely vital in the future due to shrinking feature sizes. Successful wide application of ion implantation, as well as exploitation of newly identified opportunities, will require the development of comprehensive implant models. The 141 papers (including 24 invited papers) in this volume address the most recent developments in this field. New structures and possible approaches are described. The implications for ion implantation technology as well as additional observations of needs and opportunities are discussed. The volume will be of value to all those who are interested in acquiring a more complete understanding of the current developments in ion implantation processes and comprehensive implant models.
Download or read book Ion Implantation Basics to Device Fabrication written by Emanuele Rimini and published by Springer Science & Business Media. This book was released on 2013-11-27 with total page 400 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ion implantation offers one of the best examples of a topic that starting from the basic research level has reached the high technology level within the framework of microelectronics. As the major or the unique procedure to selectively dope semiconductor materials for device fabrication, ion implantation takes advantage of the tremendous development of microelectronics and it evolves in a multidisciplinary frame. Physicists, chemists, materials sci entists, processing, device production, device design and ion beam engineers are all involved in this subject. The present monography deals with several aspects of ion implantation. The first chapter covers basic information on the physics of devices together with a brief description of the main trends in the field. The second chapter is devoted to ion im planters, including also high energy apparatus and a description of wafer charging and contaminants. Yield is a quite relevant is sue in the industrial surrounding and must be also discussed in the academic ambient. The slowing down of ions is treated in the third chapter both analytically and by numerical simulation meth ods. Channeling implants are described in some details in view of their relevance at the zero degree implants and of the available industrial parallel beam systems. Damage and its annealing are the key processes in ion implantation. Chapter four and five are dedicated to this extremely important subject.
