Download or read book Rapid Silicon Dioxide Film Formation on Clean Silicon Surfaces written by and published by . This book was released on 1992 with total page 182 pages. Available in PDF, EPUB and Kindle. Book excerpt: Future generations of silicon-based microelectronic circuits will require ever-smaller devices, new classes of devices, and demands for higher reliability, thereby requiring further refinements of silicon planar technology. An understanding of the kinetics of film formation and optical properties of ultrathin silicon dioxide films on a parent silicon substrate is necessary to measure and predict the behavior of such devices. A high-speed ellipsometer and growth chamber were constructed to measure the growth rate of SiO2 on hot silicon substrates from which the prior native oxide had been removed. Data gathered from temperatures between 800 deg C and 1000 deg C for three substrate orientations (100), (111), and (1 10) reveal the dependence of the refractive index of SiO2 as a function of oxide thickness. No orientation effects were found. Kinetic measurements reveal two new linear growth regions with activation energies of El = 0.603 eV and Ell = 0.794 eV, respectively. X-ray photoelectron spectroscopy provides chemical evidence of oxygen supersaturation and a coesite- like structure near the oxide-substrate interface. The results will provide baseline data necessary for radiation hardening assessments, data to aid the development of the next generation of ellipsometric thin film standards, and will permit process designers to develop thinner device oxides. The instrumentation developed for this work may have commercial applicability for process control feedback and in situ quality assurance. SiO2 Films, Si, Ellipsometry, X-ray Photoelectron Spectroscopy Kinetics of Film Formation, High Temperature Oxidation.
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1995 with total page 704 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Ultra Clean Processing of Silicon Surfaces written by and published by . This book was released on 2003 with total page 340 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Ultra Clean Processing of Silicon Surfaces VII written by Paul Mertens and published by Trans Tech Publications Ltd. This book was released on 2005-04-01 with total page 398 pages. Available in PDF, EPUB and Kindle. Book excerpt: Volume is indexed by Thomson Reuters CPCI-S (WoS). This book is sub-divided into 10 different topical sections; each dealing with important issues in surface cleaning and preparation.
Download or read book Handbook for Cleaning for Semiconductor Manufacturing written by Karen A. Reinhardt and published by John Wiley & Sons. This book was released on 2011-04-12 with total page 596 pages. Available in PDF, EPUB and Kindle. Book excerpt: Provides an In-depth discussion of surface conditioning for semiconductor applications The Handbook of Cleaning for Semiconductor Manufacturing: Fundamentals and Applications provides an in-depth discussion of surface conditioning for semiconductor applications. The fundamental physics and chemistry associated with wet processing is reviewed as well as surface and colloidal aspects of cleaning and etching. Topics covered in this new reference include: Front end line (FEOL) and back end of line (BEOL) cleaning applications such as high-k/metal gate post-etch cleaning and pore sealing, high-dose implant stripping and cleaning, and germanium, and silicon passivation Formulation development practices, methodology and a new directions are presented including chemicals used for preventing corrosion of copper lines, cleaning aluminium lines, reclaiming wafers, and water bonding, as well as the filtering and recirculating of chemicals including reuse and recycling Wetting, cleaning, and drying of features, such as high aspect ratio features and hydrophilic surface states, especially how to dry without watermarks, the abilities to wet hydrophobic surfaces and to remove liquid from deep features The chemical reactions and mechanisms of silicon dioxide etching with hydrofluoric acid, particle removal with ammonium hydroxide/hydrogen peroxide mixture, and metal removal with hydrochloric acid The Handbook of Cleaning for Semiconductor Manufacturing: Fundamentals and Applications is a valuable resource for any engineer or manager associated with using or supplying cleaning and contamination free technologies for semiconductor manufacturing. Engineers working for semiconductor manufacturing, capital equipment, chemicals, or other industries that assures cleanliness of chemicals, material, and equipment in the manufacturing area will also find this handbook an indispensible reference.
Download or read book Dissertation Abstracts International written by and published by . This book was released on 2005 with total page 918 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Silicon Device Processing written by Charles P. Marsden and published by . This book was released on 1970 with total page 472 pages. Available in PDF, EPUB and Kindle. Book excerpt: The objective of the Symposium was to provide an opportunity for engineers and applied scientists actively engaged in the silicon device technology field to discuss the most advanced measurement methods for process control and materials characterization.The basic theme of the meeting was to stress the interdependence of measurements techniques, facilities, and materials as they relate to the overall problems of improving and advancing silicon device sciences and technologies.(Author).
Download or read book Proceedings of the Fourth International Symposium on Cleaning Technology in Semiconductor Device Manufacturing written by Richard E. Novak and published by The Electrochemical Society. This book was released on 1996 with total page 642 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book New Insulators Devices and Radiation Effects written by and published by Elsevier. This book was released on 1999-02-11 with total page 967 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon technology today forms the basis of a world-wide, multi-billion dollar component industry. The reason for this expansion can be found not only in the physical properties of silicon but also in the unique properties of the silicon-silicon dioxide interface. However, silicon devices are still subject to undesired electrical phenomena called "instabilities". These are due mostly to the imperfect nature of the insulators used, to the not-so-perfect silicon-insulator interface and to the generation of defects and ionization phenomena caused by radiation. The problem of instabilities is addressed in this volume, the third of this book series. Vol.3 updates and supplements the material presented in the previous two volumes, and devotes five chapters to the problems of radiation-matter and radiation-device interactions. The volume will aid circuit manufacturers and circuit users alike to relate unstable electrical parameters and characteristics to the presence of physical defects and impurities or to the radiation environment which caused them.
Download or read book Official Gazette of the United States Patent and Trademark Office written by and published by . This book was released on 2002 with total page 870 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book The Surface Properties of Oxidized Silicon written by Else Kooi and published by Springer. This book was released on 2013-12-21 with total page 143 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Silicon Oxidation Studies A Review of Recent Studies on Thin Film Silicon Dioxide Formation in The Physics and Chemistry of SiO2 and the Si SiO2 Interface written by E. A. Irene and published by . This book was released on 1988 with total page 16 pages. Available in PDF, EPUB and Kindle. Book excerpt: The formation of the thin silicon dioxide (SiO2) films via thermal oxidation on single crystal silicon substrates has been found to depend on the method of Si cleaning, impurities on the Si surface, the Si crystal orientation, film stress, and the availability of electrons at the Si surface. Recent studies on these topics are recounted along with a framework for understanding. No fully acceptable model for thin Si02 formation yet exists, but recent studies lead in new directions towards this goal.
Download or read book Silicon Materials Science and Technology written by Howard R. Huff and published by The Electrochemical Society. This book was released on 1998 with total page 894 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Silicon Materials Science and Technology written by and published by The Electrochemical Society. This book was released on 1998 with total page 894 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Silicon Nitride and Silicon Dioxide Thin Insulating Films VII written by Electrochemical Society. Meeting and published by The Electrochemical Society. This book was released on 2003 with total page 652 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Ultra Fast Silicon Bipolar Technology written by Ludwig Treitinger and published by Springer Science & Business Media. This book was released on 2013-03-13 with total page 171 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since the first bipolar transistor was investigated in 1947, enormous efforts have been devoted to semiconductor devices. The strong world wide competition in fabricating metal-oxide-semiconductor field-effect of develop transistor (MOSFET) memories has accelerated the pace ments in semiconductor technology. Bipolar transistors play a major role due to their high-speed performance. Delay times of about 20 ps per gate have already been achieved. Because of this rapid technologi cal progress, it is difficult to predict the future with any certainty. In 1987 a special session on ultrafast bipolar transistors was held at the European Solid-State Device Research Conference. Its aim was to sum marize the most recent developments and to discuss the future of bip olar transistors. This book is based on that session but also includes contributions by other participants, such that a broad range of up-to is presented. Several conclusions can be drawn from date information this information: the first and most important is the very large poten tial for future progress still existing in this field. This progress is char acterized by the drive towards higher speed and lower power con sumption required for complex single-chip systems, as well as by sev eral concrete technological implementations for fulfilling these dem is that a large part of this potential can be ands. The second conclusion realized by rather unsophisticated techniques and configurations well suited to uncomplicated transfer to fabrication.
Download or read book Silicon Surfaces and Formation of Interfaces written by Jarek Dabrowski and published by World Scientific. This book was released on 2000 with total page 580 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon, the basic material for a multibillion-dollar industry, is the most widely researched and applied semiconductor, and its surfaces are the most thoroughly studied of all semiconductor surfaces. Silicon Surfaces and Formation of Interfaces may be used as an introduction to graduate-level physics and chemical physics. Moreover, it gives a specialized and comprehensive description of the most common faces of silicon crystals as well as their interaction with adsorbates and overlayers. This knowledge is presented in a systematic and easy-to-follow way. Discussion of each system is preceded by a brief overview which categorizes the features and physical mechanisms before the details are presented. The literature is easily available, and the references am numerous and organized in tables, allowing a search without the need to browse through the text. Though this volume focuses on a scientific understanding of physics on the atomistic and mesoscopic levels, it also highlights existing and potential links between basic research in surface science and applications in the silicon industry. It will be valuable to anyone writing a paper, thesis, or proposal in the field of silicon surfaces.
