Download or read book Random Telegraph Signals in Semiconductor Devices written by Eddy Simoen and published by IOP Publishing Limited. This book was released on 2016 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: As semiconductor devices move to the nanoscale, random telegraph signals have become an issue of major concern to the semiconductor industry. This book aims to provide a comprehensive and up-to-date review of one of the most challenging issues facing the semiconductor industry, from the fundamentals of random telegraph signals to applied technology

Download or read book Random Telegraph Signals in Semiconductor Devices written by E Simoen and published by Myprint. This book was released on 2016-11 with total page 218 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Random Telegraph Signals written by Eddy SIMOEN and published by . This book was released on 2016 with total page 242 pages. Available in PDF, EPUB and Kindle. Book excerpt: Annotation As semiconductor devices move to the nanoscale, random telegraph signals have become an issue of major concern to the semiconductor industry, both in development of current technology, such as memory devices and logic circuits, as well as in future semiconductor devices such as nanowire, TFET and carbon nanotube -based devices. This book provides a comprehensive and up to date review of one of the most challenging issues facing the semiconductor industry, from the fundamentals of random telegraph signals to applied technology.

Download or read book Noise in Nanoscale Semiconductor Devices written by Tibor Grasser and published by Springer Nature. This book was released on 2020-04-26 with total page 724 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book summarizes the state-of-the-art, regarding noise in nanometer semiconductor devices. Readers will benefit from this leading-edge research, aimed at increasing reliability based on physical microscopic models. Authors discuss the most recent developments in the understanding of point defects, e.g. via ab initio calculations or intricate measurements, which have paved the way to more physics-based noise models which are applicable to a wider range of materials and features, e.g. III-V materials, 2D materials, and multi-state defects. Describes the state-of-the-art, regarding noise in nanometer semiconductor devices; Enables readers to design more reliable semiconductor devices; Offers the most up-to-date information on point defects, based on physical microscopic models.

Download or read book Temperature Independent Switching Rates for a Random Telegraph Signal in a Silicon Metal Oxide Semiconductor Field Effect Transistor at Low Temperatures written by and published by . This book was released on 1999 with total page 10 pages. Available in PDF, EPUB and Kindle. Book excerpt: We have observed discrete random telegraph signals (RTS'S) in the drain voltages of three, observed above 30 K were thermally activated. The switching rate for the only RTS observed below 30 K was thermally activated above 30 K but temperature-independent below 10 K. To our knowledge, this cross-over from thermal activation to tunneling behavior has not been previously observed for RTS's Metal-oxide-semiconductor field-effect transistors (MCEWETS) often exhibit relatively large levels of low-frequency (1/fl noise) [1,2]. Much evidence suggests that this noise is related to the capture all cases, switching rates have been thermally activated, often with different activation energies for capture and/or emission is accompanied by lattice relaxation. Though thermally activated behavior has sufficiently low temperatures [7,9]. While not observed in MOSFETS, cross-over from thermal activation to configurational tunneling has been observed for RTS's in junctions [13]. drain voltage was observed to randomly switch between two discrete levels, designated as Vup and Vdn, similar to RTS's reported by others [2,7'- 11]. We have characterized six RTS 'S for temperatures above 30 K where thermally activated switching rates are observed. The properties of five of these have been the trap, i.e., the mean time a captured charge carrier spends in the trap before it is emitted. Similarly, we identify the mean time in the low resistance state (trup in state Vup) as the capture time rc. F@ure 1 shows a typical time trace of the drain-voltage fluctuation & d(t)= Vd(t)+Vd>. This indicate that both the mean capture and emission times become independent of Tat low temperatures and where a= capture or emission, is temperature independent. The solid curve in Figure 3(a) (mean capture time) was obtained using a weighted nonlinear charge carriers are not in thermal equilibrium with the lattice, i.e., that while the lattice is being cooled Instead, we believe that the transition from thermally activated to temperature-independent switching rates is associated with a lattice relaxation mechanism similar to that observed in metal- insulator-metal tunnel junctions [13]. Capture and emission of carriers are mediated by lattice relaxation, which proceeds via a thermally activated process at higher temperatures and a configurational tunneling electron capture rate depended on both lattice and electron temperatures while the emission rate Fkure 2. Arrhenius plot showing the thermally-activated behavior of both the mean capture (triangle) and emission (square) times of the RTS for temperatures above 20 K'.

Download or read book Measurements Modeling and Simulation of Semiconductor gate Dielectric Defects Using Random Telegraph Signals written by Mohamed Nour and published by . This book was released on 2016 with total page 192 pages. Available in PDF, EPUB and Kindle. Book excerpt: Constructing an effective statistical model and a simulation tool that can predict the phenomenon of random telegraph signals (RTS) is the objective of this work. The continuous scaling down of metal oxide - semiconductor field effect transistors (MOSFETs) makes charging/discharging traps(s) located at the silicon/silicon dioxide interface or deep in the oxide bulk by mobile charge(s) a more pronounced problem for both analog and digital applications. The intent of this work is to develop an RTS statistical model and a simulation tool based on first principles and supported by extensive experimental data. The newly developed RTS statistical model and its simulation tool should be able to replicate and predict the RTS in time and frequency domains. First, room temperature RTS measurements are performed which provide limited information about the trap. They yield the extraction of some trap and RTS characteristics such as average capture and emission times associated with RTS traces, trap position in the oxide with respect to the Si/SiO2 interface and along the channel with respect to the source, capture cross section, and trap energies in the Si and SiO2 band - gaps. Variable temperature measurements, on the other hand, yield much more valuable information. Variable temperature RTS measurements from room temperature down to 80 K were performed, with the MOSFET biased from threshold voltage to strong inversion, in the linear and saturation regions. Variable temperature RTS measurements yield the extraction of trap characteristics such as capture cross - section prefactor, capture and emission activation energies, change in entropy and enthalpy, and relaxation energy associated with a trap from which the nature and origin of a defect center can be identified. The newly developed Random Telegraph Signals Simulation (RTSSIM) is based on several physical principles and mechanisms e.g. (1) capturing and emitting a mobile charge from and to the channel is governed by phonon- assisted- tunneling, (2) traps only within a few kBT of the Fermi energy level are considered electrically active, (3) trap density is taken as U - shaped in energy in the silicon band-gap, (4) device scalability is accounted for, (5) and temperature dependence of all parameters is considered. RTSSIM reconstructs the RTS traces in time domain from which the power spectral density (PSD) is evaluated. If there is 20 or more active traps, RTSSIM evaluates the PSD from the superposition of the RTS spectra. RTSSIM extracts RTS and trap characteristics from the simulated RTS data and outputs them to MS Excel files for further analyses and study. The novelty of this work is: (1) it is the first time quantum trap states have been accurately assigned to each switching level in a complex RTS corresponding to dependently and independently interacting traps, (2) new physics-based measurementdriven model and simulation tool has been developed for RTS phenomenon in a MOSFET, (3) and it is the first time a species in SiO2 responsible for RTS has been identified through time-domain measurements and extensive analysis using four trap characteristics at the same time.

Download or read book Physics of Semiconductor Devices written by K. N. Bhat and published by Alpha Science Int'l Ltd.. This book was released on 2004 with total page 1310 pages. Available in PDF, EPUB and Kindle. Book excerpt: Contributed papers of the workshop held at IIT, Madras, in 2003.

Download or read book Temperature and Gate Voltage Dependence of Random Telegraph Switching in MOSFETs written by Nicholas Borland and published by . This book was released on 1993 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: We performed experiments on a type of transistor known as a MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor), hoping to discover how the magnitude of the noise in these devices depended on temperature and gate voltage. In the process we learned that the 1/f noise is actually the superposition of many Random Telegraph Signals (RTSs), which are fluctuations between two electron states that cause a change in the resistance of the transistor. It is generally believed that these fluctuations arise when defects in the device create localized electron energy levels that may trap a carrier. Thus, learning about the specific properties of these fluctuations can give us insight into the nature of the defects themselves. By studying small devices and lowering the temperature to the 5-200K range, it was possible to observe individual fluctuators and thus discover what these properties are.

Download or read book Strain Engineered MOSFETs written by C.K. Maiti and published by CRC Press. This book was released on 2018-10-03 with total page 320 pages. Available in PDF, EPUB and Kindle. Book excerpt: Currently strain engineering is the main technique used to enhance the performance of advanced silicon-based metal-oxide-semiconductor field-effect transistors (MOSFETs). Written from an engineering application standpoint, Strain-Engineered MOSFETs introduces promising strain techniques to fabricate strain-engineered MOSFETs and to methods to assess the applications of these techniques. The book provides the background and physical insight needed to understand new and future developments in the modeling and design of n- and p-MOSFETs at nanoscale. This book focuses on recent developments in strain-engineered MOSFETS implemented in high-mobility substrates such as, Ge, SiGe, strained-Si, ultrathin germanium-on-insulator platforms, combined with high-k insulators and metal-gate. It covers the materials aspects, principles, and design of advanced devices, fabrication, and applications. It also presents a full technology computer aided design (TCAD) methodology for strain-engineering in Si-CMOS technology involving data flow from process simulation to process variability simulation via device simulation and generation of SPICE process compact models for manufacturing for yield optimization. Microelectronics fabrication is facing serious challenges due to the introduction of new materials in manufacturing and fundamental limitations of nanoscale devices that result in increasing unpredictability in the characteristics of the devices. The down scaling of CMOS technologies has brought about the increased variability of key parameters affecting the performance of integrated circuits. This book provides a single text that combines coverage of the strain-engineered MOSFETS and their modeling using TCAD, making it a tool for process technology development and the design of strain-engineered MOSFETs.

Download or read book Analytical and Diagnostic Techniques for Semiconductor Materials Devices and Processes written by Bernd O. Kolbesen and published by The Electrochemical Society. This book was released on 2003 with total page 572 pages. Available in PDF, EPUB and Kindle. Book excerpt: .".. ALTECH 2003 was Symposium J1 held at the 203rd Meeting of the Electrochemical Society in Paris, France from April 27 to May 2, 2003 ... Symposium M1, Diagnostic Techniques for Semiconductor Materials and Devices, was part of the 202nd Meeting of the Electrochemical Society held in Salt Lake City, Utah, from October 21 to 25, 2002 ..."--p. iii.

Download or read book Nanoscale Devices written by Brajesh Kumar Kaushik and published by CRC Press. This book was released on 2018-11-16 with total page 414 pages. Available in PDF, EPUB and Kindle. Book excerpt: The primary aim of this book is to discuss various aspects of nanoscale device design and their applications including transport mechanism, modeling, and circuit applications. . Provides a platform for modeling and analysis of state-of-the-art devices in nanoscale regime, reviews issues related to optimizing the sub-nanometer device performance and addresses simulation aspect and/or fabrication process of devices Also, includes design problems at the end of each chapter

Download or read book CMOS written by Angelo Rivetti and published by CRC Press. This book was released on 2018-09-03 with total page 589 pages. Available in PDF, EPUB and Kindle. Book excerpt: CMOS: Front-End Electronics for Radiation Sensors offers a comprehensive introduction to integrated front-end electronics for radiation detectors, focusing on devices that capture individual particles or photons and are used in nuclear and high energy physics, space instrumentation, medical physics, homeland security, and related fields. Emphasizing practical design and implementation, this book: Covers the fundamental principles of signal processing for radiation detectors Discusses the relevant analog building blocks used in the front-end electronics Employs systematically weak and moderate inversion regimes in circuit analysis Makes complex topics such as noise and circuit-weighting functions more accessible Includes numerical examples where appropriate CMOS: Front-End Electronics for Radiation Sensors provides specialized knowledge previously obtained only through the study of multiple technical and scientific papers. It is an ideal text for students of physics and electronics engineering, as well as a useful reference for experienced practitioners.

Download or read book Molecular Electronics written by Mahler and published by CRC Press. This book was released on 2020-08-11 with total page 413 pages. Available in PDF, EPUB and Kindle. Book excerpt: Integrating molecular physics and information theory, this work presents molecular electronics as a method for information storage and retrieval that incorporates nanometer-scaled systems, uses microscopic particles and exploits the laws of quantum mechanics. It furnishes application examples employing properties of distinct molecules joined together to a macroscopic ensemble of virtually identical units.

Download or read book Low dimensional Semiconductors written by M. J. Kelly and published by Clarendon Press. This book was released on 1995-11-23 with total page 569 pages. Available in PDF, EPUB and Kindle. Book excerpt: This text is a first attempt to pull together the whole of semiconductor science and technology since 1970 in so far as semiconductor multilayers are concerned. Material, technology, physics and device issues are described with approximately equal emphasis, and form a single coherant point of view. The subject matter is the concern of over half of today's active semiconductor scientists and technologists, the remainder working on bulk semiconductors and devices. It is now routine to design and the prepare semiconductor multilayers at a time, with independent control over the dropping and composition in each layer. In turn these multilayers can be patterned with features that as a small as a few atomic layers in lateral extent. The resulting structures open up many new ares of exciting solid state and quantum physics. They have also led to whole new generations of electronic and optoelectronic devices whose superior performance relates back to the multilayer structures. The principles established in the field have several decades to go, advancing towards the ultimate of materials engineering, the design and preparation of solids atom by atom. The book should appeal equally to physicists, electronic engineers and materials scientists.

Download or read book Issues in Applied Physics 2011 Edition written by and published by ScholarlyEditions. This book was released on 2012-01-09 with total page 6150 pages. Available in PDF, EPUB and Kindle. Book excerpt: Issues in Applied Physics / 2011 Edition is a ScholarlyEditions™ eBook that delivers timely, authoritative, and comprehensive information about Applied Physics. The editors have built Issues in Applied Physics: 2011 Edition on the vast information databases of ScholarlyNews.™ You can expect the information about Applied Physics in this eBook to be deeper than what you can access anywhere else, as well as consistently reliable, authoritative, informed, and relevant. The content of Issues in Applied Physics: 2011 Edition has been produced by the world’s leading scientists, engineers, analysts, research institutions, and companies. All of the content is from peer-reviewed sources, and all of it is written, assembled, and edited by the editors at ScholarlyEditions™ and available exclusively from us. You now have a source you can cite with authority, confidence, and credibility. More information is available at http://www.ScholarlyEditions.com/.

Download or read book Low Frequency Noise in Advanced MOS Devices written by Martin Haartman and published by Springer Science & Business Media. This book was released on 2007-08-23 with total page 224 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is an introduction to noise, describing fundamental noise sources and basic circuit analysis, discussing characterization of low-frequency noise and offering practical advice that bridges concepts of noise theory and modelling, characterization, CMOS technology and circuits. The text offers the latest research, reviewing the most recent publications and conference presentations. The book concludes with an introduction to noise in analog/RF circuits and describes how low-frequency noise can affect these circuits.

Download or read book Inside NAND Flash Memories written by Rino Micheloni and published by Springer Science & Business Media. This book was released on 2010-07-27 with total page 582 pages. Available in PDF, EPUB and Kindle. Book excerpt: Digital photography, MP3, digital video, etc. make extensive use of NAND-based Flash cards as storage media. To realize how much NAND Flash memories pervade every aspect of our life, just imagine how our recent habits would change if the NAND memories suddenly disappeared. To take a picture it would be necessary to find a film (as well as a traditional camera...), disks or even magnetic tapes would be used to record a video or to listen a song, and a cellular phone would return to be a simple mean of communication rather than a multimedia console. The development of NAND Flash memories will not be set down on the mere evolution of personal entertainment systems since a new killer application can trigger a further success: the replacement of Hard Disk Drives (HDDs) with Solid State Drives (SSDs). SSD is made up by a microcontroller and several NANDs. As NAND is the technology driver for IC circuits, Flash designers and technologists have to deal with a lot of challenges. Therefore, SSD (system) developers must understand Flash technology in order to exploit its benefits and countermeasure its weaknesses. Inside NAND Flash Memories is a comprehensive guide of the NAND world: from circuits design (analog and digital) to Flash reliability (including radiation effects), from testing issues to high-performance (DDR) interface, from error correction codes to NAND applications like Flash cards and SSDs.