Download or read book Random Telegraph Signal and 1 f Noise in MOS Transistors written by Ming-Horn Tsai and published by . This book was released on 1994 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Noise In Physical Systems And 1 f Fluctuations Proceedings Of The 14th International Conference written by C Claeys and published by World Scientific. This book was released on 1997-06-01 with total page 702 pages. Available in PDF, EPUB and Kindle. Book excerpt: The recent conferences in this series were organised in Montreal (1987), Budapest (1989), Kyoto (1991), St Louis (1993) and Palanga (1995). The aim of the conference was to bring together specialists in fluctuation phenomena from different fields and to make a bridge between theoretical scientists and more applied or engineering oriented researchers. Therefore a broad variety of topics covering the fundamental aspects of noise and fluctuations as well as applications in various fields are addressed. Noise in materials, components, circuits and electronic, biological and other physical systems are discussed.
Download or read book The Physics and Modeling of Mosfets written by Mitiko Miura-Mattausch and published by World Scientific. This book was released on 2008 with total page 381 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume provides a timely description of the latest compact MOS transistor models for circuit simulation. The first generation BSIM3 and BSIM4 models that have dominated circuit simulation in the last decade are no longer capable of characterizing all the important features of modern sub-100nm MOS transistors. This book discusses the second generation MOS transistor models that are now in urgent demand and being brought into the initial phase of manufacturing applications. It considers how the models are to include the complete drift-diffusion theory using the surface potential variable in the MOS transistor channel in order to give one characterization equation.
Download or read book Low Frequency Noise in Advanced MOS Devices written by Martin Haartman and published by Springer Science & Business Media. This book was released on 2007-08-23 with total page 224 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is an introduction to noise, describing fundamental noise sources and basic circuit analysis, discussing characterization of low-frequency noise and offering practical advice that bridges concepts of noise theory and modelling, characterization, CMOS technology and circuits. The text offers the latest research, reviewing the most recent publications and conference presentations. The book concludes with an introduction to noise in analog/RF circuits and describes how low-frequency noise can affect these circuits.
Download or read book Advanced Experimental Methods for Noise Research in Nanoscale Electronic Devices written by Josef Sikula and published by Springer Science & Business Media. This book was released on 2006-02-21 with total page 371 pages. Available in PDF, EPUB and Kindle. Book excerpt: A discussion of recently developed experimental methods for noise research in nanoscale electronic devices, conducted by specialists in transport and stochastic phenomena in nanoscale physics. The approach described is to create methods for experimental observations of noise sources, their localization and their frequency spectrum, voltage-current and thermal dependences. Our current knowledge of measurement methods for mesoscopic devices is summarized to identify directions for future research, related to downscaling effects. The directions for future research into fluctuation phenomena in quantum dot and quantum wire devices are specified. Nanoscale electronic devices will be the basic components for electronics of the 21st century. From this point of view the signal-to-noise ratio is a very important parameter for the device application. Since the noise is also a quality and reliability indicator, experimental methods will have a wide application in the future.
Download or read book Noise In Physical Systems And 1 f Fluctuations Proceedings Of The 13th International Conference written by Vytautas Bareikis and published by World Scientific. This book was released on 1995-04-26 with total page 770 pages. Available in PDF, EPUB and Kindle. Book excerpt: The volume constitutes the proceedings of the 13th International Conference on Noise in Physical Systems and 1/f Fluctuations (ICNF'95) held in Palanga, Lithuania, in the period 29 May - 3 June 1995.International conference of fluctuation phenomena has a rich history. Previous ones were held in St. Louis (USA, 1993), Kyoto (Japan, 1991), Budapest (Hungary, 1989), Montreal (Canada, 1983), etc. The conference proved to be successful in bringing together specialists in fluctuation phenomena in very different areas, and providing a bridge linking theorists and applied scientists involved in the design of new generation of electronic devices. Correspondingly, the volume covers fundamental aspects of noise in various fields of science and modern technology. Mesoscopic fluctuations, noise in high temperature superconductors, in nanoscale structures, in optoelectronic and microwave devices, fluctuation phenomena in biological systems and human body are in the spotlight.
Download or read book Random Telegraph Signals in Semiconductor Devices written by Eddy Simoen and published by . This book was released on 2016 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: "Following their first observation in 1984, random telegraph signals (RTSs) were initially a purely scientific tool to study fundamental aspects of defects in semiconductor devices. As semiconductor devices move to the nanoscale however, RTSs have become an issue of major concern to the semiconductor industry, both in development of current technology, such as memory devices and logic circuits, as well as in future semiconductor devices beyond the silicon roadmap, such as nanowire, TFET and carbon nanotube-based devices. It has become clear that the reliability of state-of-the-art and future CMOS technology nodes is dominated by RTS and single trap phenomena, and so its understanding is of vital importance for the modelling and simulation of the operation and the expected lifetime of CMOS devices and circuits. It is the aim of this book to provide a comprehensive and up-to-date review of one of the most challenging issues facing the semiconductor industry, from the fundamentals of RTSs to applied technology."--Prové de l'editor.
Download or read book Noise in Physical Systems and 1 f Fluctuations written by T. Musha and published by IOS Press. This book was released on 1992 with total page 784 pages. Available in PDF, EPUB and Kindle. Book excerpt: Presents and discusses fundamental aspects and key implications of noise and fluctuations in various fields of science, technology and sociology, with special emphasis in 1/f fluctuations in biology. There are contributions from leading international experts.
Download or read book Noise In Physical Systems And 1 f Fluctuations Icnf 2001 Procs Of The 16th Intl Conf written by Gijs Bosman and published by World Scientific. This book was released on 2001-08-20 with total page 850 pages. Available in PDF, EPUB and Kindle. Book excerpt: The International Conference on Noise in Physical Systems and 1/f Fluctuations brings together physicists and engineers interested in all aspects of noise and fluctuations in materials, devices, circuits, and physical and biological systems. The experimental research on novel devices and systems and the theoretical studies included in this volume provide the reader with a comprehensive, in-depth treatment of present noise research activities worldwide.
Download or read book Noise in Physical Systems and 1 f Fluctuations written by Gijs Bosman and published by World Scientific. This book was released on 2001 with total page 850 pages. Available in PDF, EPUB and Kindle. Book excerpt: The International Conference on Noise in Physical Systems and 1/f Fluctuations brings together physicists and engineers interested in all aspects of noise and fluctuations in materials, devices, circuits, and physical and biological systems. The experimental research on novel devices and systems and the theoretical studies included in this volume provide the reader with a comprehensive, in-depth treatment of present noise research activities worldwide.
Download or read book Noise in Nanoscale Semiconductor Devices written by Tibor Grasser and published by Springer Nature. This book was released on 2020-04-26 with total page 724 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book summarizes the state-of-the-art, regarding noise in nanometer semiconductor devices. Readers will benefit from this leading-edge research, aimed at increasing reliability based on physical microscopic models. Authors discuss the most recent developments in the understanding of point defects, e.g. via ab initio calculations or intricate measurements, which have paved the way to more physics-based noise models which are applicable to a wider range of materials and features, e.g. III-V materials, 2D materials, and multi-state defects. Describes the state-of-the-art, regarding noise in nanometer semiconductor devices; Enables readers to design more reliable semiconductor devices; Offers the most up-to-date information on point defects, based on physical microscopic models.
Download or read book Physics And Modeling Of Mosfets The Surface potential Model Hisim written by Tatsuya Ezaki and published by World Scientific. This book was released on 2008-06-03 with total page 381 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume provides a timely description of the latest compact MOS transistor models for circuit simulation. The first generation BSIM3 and BSIM4 models that have dominated circuit simulation in the last decade are no longer capable of characterizing all the important features of modern sub-100nm MOS transistors. This book discusses the second generation MOS transistor models that are now in urgent demand and being brought into the initial phase of manufacturing applications. It considers how the models are to include the complete drift-diffusion theory using the surface potential variable in the MOS transistor channel in order to give one characterization equation.
Download or read book Advances in Electronics and Electron Physics written by and published by Academic Press. This book was released on 1993-11-17 with total page 319 pages. Available in PDF, EPUB and Kindle. Book excerpt: Advances in Electronics and Electron Physics
Download or read book Predictive Simulation of Semiconductor Processing written by Jarek Dabrowski and published by Springer Science & Business Media. This book was released on 2013-03-09 with total page 505 pages. Available in PDF, EPUB and Kindle. Book excerpt: Predictive Simulation of Semiconductor Processing enables researchers and developers to extend the scaling range of semiconductor devices beyond the parameter range of empirical research. It requires a thorough understanding of the basic mechanisms employed in device fabrication, such as diffusion, ion implantation, epitaxy, defect formation and annealing, and contamination. This book presents an in-depth discussion of our current understanding of key processes and identifies areas that require further work in order to achieve the goal of a comprehensive, predictive process simulation tool.
Download or read book Silicon Analog Components written by Badih El-Kareh and published by Springer. This book was released on 2019-08-07 with total page 648 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book covers modern analog components, their characteristics, and interactions with process parameters. It serves as a comprehensive guide, addressing both the theoretical and practical aspects of modern silicon devices and the relationship between their electrical properties and processing conditions. Based on the authors’ extensive experience in the development of analog devices, this book is intended for engineers and scientists in semiconductor research, development and manufacturing. The problems at the end of each chapter and the numerous charts, figures and tables also make it appropriate for use as a text in graduate and advanced undergraduate courses in electrical engineering and materials science. Enables engineers to understand analog device physics, and discusses important relations between process integration, device design, component characteristics, and reliability; Describes in step-by-step fashion the components that are used in analog designs, the particular characteristics of analog components, while comparing them to digital applications; Explains the second-order effects in analog devices, and trade-offs between these effects when designing components and developing an integrated process for their manufacturing.
Download or read book Noise in Devices and Circuits written by and published by . This book was released on 2003 with total page 546 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Piezoelectric Accelerometers with Integral Electronics written by Felix Levinzon and published by Springer. This book was released on 2014-08-06 with total page 180 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides an invaluable reference to Piezoelectric Accelerometers with Integral Electronics (IEPE). It describes the design and performance parameters of IEPE accelerometers and their key elements, PE transducers and FET-input amplifiers. Coverage includes recently designed, low-noise and high temperature IEPE accelerometers. Readers will benefit from the detailed noise analysis of the IEPE accelerometer, which enables estimation of its noise floor and noise limits. Other topics useful for designers of low-noise, high temperature silicon-based electronics include noise analysis of FET amplifiers, experimental investigation and comparison of low-frequency noise in different JFETs and MOSFETs, and ultra-low-noise JFETs (at level of 0.6 nV/√Hz). The discussion also includes ultra-low-noise (at level of 3 ng/√Hz) seismic IEPE accelerometers and high temperature (up to 175 ̊C) triaxial and single axis miniature IEPE accelerometers, along with key factors for their design. • Provides a comprehensive reference to the design and performance of IEPE accelerometers, including low-noise and high temperature IEPE sensors; • Includes noise analysis of the IEPE accelerometer, which enables estimation of the its noise floor and noise limits; • Describes recently design of ultra-low-noise (at level of 3 ng/√Hz) IEPE seismic accelerometers and high temperature (up to 175 ̊C) triaxial and single axis miniature IEPE accelerometers; • Compares low-frequency noise in different JFETs and MOSFETs including measurement results of ultra-low-noise (at level of 0.6 nV/√Hz) JFET; • Presents key factors for design of low-noise and high temperature IEPE accelerometer and their electronics.
