Download or read book Radiation Effects on Thin film Microelectronics written by Virgil H. Strahan and published by . This book was released on 1966 with total page 40 pages. Available in PDF, EPUB and Kindle. Book excerpt: The report describes the program to investigate the mechanisms of transient radiation effects on thin-film passive components. The effects under study included secondary emission effects, radiation-induced conductivity, memory and accumulated dose effects and damage by neutron irradiation. Radiation sources used were the 2 MeV and 600 keV flash X-ray machines, LINAC, and Fast Burst Reactor (FBR). A group of thin-film capacitors for studying the various effects was designed and fabricated. These capacitors were irradiated in air and in vacuum to determine the relative importance of the ambient environment on the total radiation-induced disturbance. Particular attention was paid to the effects of materials in the immediate proximity of the devices under study to determine methods of minimizing the effects of transient radiation.
Download or read book Radiation Effects in Advanced Semiconductor Materials and Devices written by C. Claeys and published by Springer Science & Business Media. This book was released on 2013-11-11 with total page 424 pages. Available in PDF, EPUB and Kindle. Book excerpt: This wide-ranging book summarizes the current knowledge of radiation defects in semiconductors, outlining the shortcomings of present experimental and modelling techniques and giving an outlook on future developments. It also provides information on the application of sensors in nuclear power plants.
Download or read book Study of Transient Radiation Effects on Microelectronics written by Edward J. Steele and published by . This book was released on 1967 with total page 237 pages. Available in PDF, EPUB and Kindle. Book excerpt: The purpose was to determine microcircuit vulnerability in a transient radiation environment. Microcircuits constructed by different fabrication techniques were experimentally evaluated in an ionizing and bulk displacement radiation environment to study the basic failure mechanisms. Test specimens were of three basic circuit types; gates, flip-flops, and amplifiers. Fabrication techniques represented were monolithic p-n junction isolation, monolithic oxide-isolation, multiple chip, thin-film compatible, and thin-film hybrid. Circuit failure thresholds were determined as a function of fan-out, ambient temperature requirements, and electrical parameter degradation. Experimental study consisted of measuring transient responses in pulsed ionizing radiation environments, and determining bulk displacement effects from exposure to a reactor neutron/gamma environment. Failure mechanisms were analytically related to the characteristics of the circuit design and fabrication technique. (Author).
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1991 with total page 1460 pages. Available in PDF, EPUB and Kindle. Book excerpt: Lists citations with abstracts for aerospace related reports obtained from world wide sources and announces documents that have recently been entered into the NASA Scientific and Technical Information Database.
Download or read book Transient Radiation Effects on Microelectronics written by William C. Bowman and published by . This book was released on 1965 with total page 89 pages. Available in PDF, EPUB and Kindle. Book excerpt: Eleven microcircuit logic gates, representing five types of construction techniques, and a number of thin-film components were tested for transient responses using pulsed ionizing radiation and for permanent damage using neutrons. A linear accelerator provided the radiation for both tests (10-Mev electrons and uranium photoneutrons respectively). Logic failures due to ionizing radiation pulses required from 6 to 1,000 rads (Si) or from 10 to the 8 power to 10 to the 10 power rads (Si)/sec and occurred usually in the 1 state but occasionally at lower radiation levels in the 0 state. Detailed studies were also made on components that were electrically isolated from each circuit. Results indicate that the failure levels are primarily a function of circuit design and that construction methods, although having some effect, are of less significance. Responses of thin-film components were attributed mainly to secondary-emission effects. Neutron irradiation caused all circuits to fail at about 10 to the 15 power n/cm/sq (E> 10 kev). The circuit degradation was due entirely to the degradation of the circuit transistors. Higher leakage currents developed in monolithic circuits had no effect on circuit performance. Failure levels depended on the transistor gain degradation, its initial value, and the minimum gain required for the circuit to function. (Author).
Download or read book Radiation Effects in Interfaces and Thin Films written by Alexander Mairov and published by . This book was released on 2016 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: One of the key approaches to developing materials with greater radiation damage resistance is to introduce a large fraction of internal interfaces. Interfaces act as sinks for recombination of radiation-induced defects and as sites for accumulation of helium bubbles, thereby diverting them away from grain boundaries, where they can induce embrittlement. The beneficial role of interfaces in mitigating radiation damage has been demonstrated in nanoscale multilayered structures and in nanograined materials. Another more common example is oxide dispersion strengthened (ODS) steels and nanostructured ferritic alloys (NFA) where a fine distribution of particles (clusters) of varying stoichiometries (e.g., Y2Ti2O7, Y2TiO5, Y2O3, TiO2 and Y-Ti-O non-stoichiometric oxides) not only confer high creep strength, but also high radiation damage tolerance due to the large area of metal/oxide interfaces. However, the efficacy of these interfaces to act as defect sinks depends on their compositional and physical stability under radiation. With this background, this work focused on the stability of interfaces between Ti, TiO2, and Y2O3 thin film deposited on Fe-12%Cr substrates after irradiation with 5MeV Ni+2 ions at various temperatures. TEM and STEM-EDS methods were used to understand the compositional changes at the interfaces. Additionally, accumulation of implanted helium at epitaxial and non-epitaxial Fe/Y2O3 interfaces was also studied. Finally, the study was extended to study irradiation effects (up to 150 dpa) in novel Al2O3 nanoceramic films with immediate potential applications as coatings for corrosion protection in the harsh high temperature environments of Gen IV reactors. This research is expected to have implications in the development of radiation damage tolerant nanostructured alloys for nuclear reactors while also expanding the scientific knowledge-base in the area of radiation stability of interfaces in solids and protective coatings.
Download or read book Study of Transient Radiation Effects on Microelectronics Volume I Introduction Experimental Study Digital Logic Gate Study written by James P. Raymond and published by . This book was released on 1965 with total page 220 pages. Available in PDF, EPUB and Kindle. Book excerpt: The purpose was to compare microcircuits of differing construction techniques to determine their relative vulnerability, to study basic radiation-induced failure mechanisms, and to relate these mechanisms to both construction technique and circuit design. Test specimens were of three basic circuit types of five different fabrication techniques. Circuit types included digital logic gates, flip-flops, and differential or digital sense amplifiers. Fabrication techniques represented monolithic, multiple-chip, thin film compatible, oxide-isolation, and thin-film hybrid. Experimental study consisted of determining the electrical circuit performance parameters, the transient response in pulsed ionizing radiation environments, and permanent degradation from exposure to a pulsed reactor neutron/gamma environment. Failure mechanisms were, when possible, related analyticall, to the characteristics of the circuit and the fabrication technique. (Author).
Download or read book Technical Abstract Bulletin written by Defense Documentation Center (U.S.) and published by . This book was released on 1967 with total page 784 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Study of Transient Radiation Effects on Microelectronics Volume Ii Flip flop Study Amplifier Study Supplementary Circuit Investigation Conclusions and Recommendations written by James P. Raymond and published by . This book was released on 1965 with total page 183 pages. Available in PDF, EPUB and Kindle. Book excerpt: The transient radiation effects in 17 circuit types were experimentally studied in detail. Conclusions regarding the vulnerability of each circuit type were presented in the previous discussions. The overall conclusion might be that the circuit design is the most important consideration in the circuit vulnerability with the specific circuit fabrication technique closely following. Optimum circuit design will include the widest allowable margin for transistor neutron-induced gain degradation and a trade-off between the ionizing-radiation compensation and turn-on transistor photocurrents. Observed transient responses in the p-n junction isolation circuits were substantially greater than the responses observed in the passive substrate or polycrystalline-oxide isolation circuits. For identical circuits the low level ionizing radiation response would be the greatest for the monolithic-chip circuit followed by the compatible thin-film, polycrystalline-oxide, multiple-chip and thin-film hybrid in order of decreasing response. With the exception of the monolithic response, the relative circuit response between types will be dominated by the specific circuit characteristics. (Author).
Download or read book ERDA Energy Research Abstracts written by United States. Energy Research and Development Administration and published by . This book was released on 1976-05 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book ERDA Energy Research Abstracts written by United States. Energy Research and Development Administration. Technical Information Center and published by . This book was released on 1976 with total page 724 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book ERDA Research Abstracts written by United States. Energy Research and Development Administration and published by . This book was released on 1976 with total page 716 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Nuclear Science Abstracts written by and published by . This book was released on 1976 with total page 680 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Effects of Radiation on Ferroelectric Thin Film Materials written by Hanhan Zhou and published by . This book was released on 2019 with total page 163 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Applications of Microelectronics to Aerospace Equipment written by Robert Charles Davy and published by . This book was released on 1968 with total page 436 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Radiation Effects on Embedded Systems written by Raoul Velazco and published by Springer Science & Business Media. This book was released on 2007-06-19 with total page 273 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume provides an extensive overview of radiation effects on integrated circuits, offering major guidelines for coping with radiation effects on components. It contains a set of chapters based on the tutorials presented at the International School on Effects of Radiation on Embedded Systems for Space Applications (SERESSA) that was held in Manaus, Brazil, November 20-25, 2005.
Download or read book Radiation Effects on Thin Film Integrated Circuit Elements written by V. H. Strahan and published by . This book was released on 1968 with total page 54 pages. Available in PDF, EPUB and Kindle. Book excerpt: The charge change seen by a thin-film conductor deposited on a substrate due to electrons scattered from the substrate by incident X rays was investigated both experimentally and theoretically.
