Download or read book Quantum Transport in Epitaxial Graphene on Silicon Carbide 0001 written by Johannes Jobst and published by . This book was released on 2013-02-28 with total page 212 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Gateless Patterning in Epitaxial Graphene on Silicon Carbide 0001 Quantum Transport and THz Response written by Christian Sorger and published by . This book was released on 2016 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Epitaxial Graphene on Silicon Carbide written by Gemma Rius and published by CRC Press. This book was released on 2018-01-19 with total page 311 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is the first book dedicated exclusively to epitaxial graphene on silicon carbide (EG-SiC). It comprehensively addresses all fundamental aspects relevant for the study and technology development of EG materials and their applications, using quantum Hall effect studies and probe techniques such as scanning tunneling microscopy and atomic resolution imaging based on transmission electron microscopy. It presents the state of the art of the synthesis of EG-SiC and profusely explains it as a function of SiC substrate characteristics such as polytype, polarity, and wafer cut as well as the in situ and ex situ conditioning techniques, including H2 pre-deposition annealing and chemical mechanical polishing. It also describes growth studies, including the most popular characterization techniques, such as ultrahigh-vacuum, partial-pressure, or graphite-cap sublimation techniques, for high-quality controlled deposition. The book includes relevant examples on synthesis and characterization techniques as well as device fabrication processing and performance and complements them with theoretical modeling and simulation studies, which are helpful in the fundamental comprehension of EG-SiC substrates and their potential use in electronic applications. It addresses the fundamental aspects of EG-SiC using quantum Hall effect studies as well as probe techniques, such as scanning tunneling microscopy or atomic resolution imaging based on transmission electron microscopy. It comprises chapters that present reviews and vision on the current state of the art of experts in physics, electronic engineering, materials science, and nanotechnology from Europe and Asia.

Download or read book Charge Transport in Epitaxial Graphene on Silicon Carbide 0001 The Role of Mosaic like Disorder written by Ferdinand Kisslinger and published by . This book was released on 2018 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Epitaxial Graphene on Silicon Carbide written by Gemma Rius and published by CRC Press. This book was released on 2018-01-19 with total page 248 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is the first book dedicated exclusively to epitaxial graphene on silicon carbide (EG-SiC). It comprehensively addresses all fundamental aspects relevant for the study and technology development of EG materials and their applications, using quantum Hall effect studies and probe techniques such as scanning tunneling microscopy and atomic resolution imaging based on transmission electron microscopy. It presents the state of the art of the synthesis of EG-SiC and profusely explains it as a function of SiC substrate characteristics such as polytype, polarity, and wafer cut as well as the in situ and ex situ conditioning techniques, including H2 pre-deposition annealing and chemical mechanical polishing. It also describes growth studies, including the most popular characterization techniques, such as ultrahigh-vacuum, partial-pressure, or graphite-cap sublimation techniques, for high-quality controlled deposition. The book includes relevant examples on synthesis and characterization techniques as well as device fabrication processing and performance and complements them with theoretical modeling and simulation studies, which are helpful in the fundamental comprehension of EG-SiC substrates and their potential use in electronic applications. It addresses the fundamental aspects of EG-SiC using quantum Hall effect studies as well as probe techniques, such as scanning tunneling microscopy or atomic resolution imaging based on transmission electron microscopy. It comprises chapters that present reviews and vision on the current state of the art of experts in physics, electronic engineering, materials science, and nanotechnology from Europe and Asia.

Download or read book Manipulation and Characterization of Graphene on Silicon Carbide 0001 written by Daniel Waldmann and published by . This book was released on 2013-03 with total page 170 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Measurement of Electron Spin Transport in Graphene on 6H silicon Carbide 0001 written by Joseph R. Abel and published by . This book was released on 2012 with total page 85 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Free standing Epitaxial Graphene on Silicon Carbide and Transport Barriers in Layered Materials written by Shriram Shivaraman and published by . This book was released on 2013 with total page 157 pages. Available in PDF, EPUB and Kindle. Book excerpt: This thesis is based on the topic of layered materials, in which different layers interact with each other via van der Waals forces. The majority of this thesis deals with epitaxial graphene (EG) obtained from silicon carbide (SiC). Free-standing epitaxial graphene (FSEG) structures are produced from EG using a photoelectrochemical (PEC) etching process developed for making suspended graphene structures on a large-scale. These structures are investigated for their mechanical and electrical properties. For doubly-clamped FSEG structures, a unique U-beam effect is observed which causes orders of magnitude increase in their mechanical resonance frequency compared to that expected using simple beam theory. Combined magnetotransport and Raman spectroscopy studies reveal that FSEG devices produced from nominally monolayer graphene on the Si-face of SiC exhibit properties of an inhomogeneously doped bilayer after becoming suspended. This suggests that the buffer layer which precedes graphene growth on the Si-face of SiC gets converted to a graphene layer after the PEC etching process. In the second theme of this thesis, transport barriers in layered materials are investigated. The EG-SiC interface is studied using a combination of electrical (I-V, C-V) and photocurrent spectroscopy techniques. It is shown that the interface may be described as having a Schottky barrier for electron transport with a Gaussian distribution of barrier heights. Another interface explored in this work is that between different layers of MoS2, a layered material belonging to the class of transition metal dichalcogenides. This interface maybe thought of as a one-dimensional junction. Fourpoint transport measurements indicate the presence of a barrier for electron transport at this interface. A simple model of the junction as a region with an increased threshold voltage and degraded mobility is suggested. The final chapter is a collection of works based on the topic of layered materials, which are not related to the main theme of the thesis. They include fabrication and characterization details of a dual-gated bilayer graphene device, an investigation of the graphene-Si interface and hexagonal boron nitride-based membranes. These are presented in the hope that they may be useful for further investigations along those directions.

Download or read book 2 D Electronic Materials written by Dorr Oliver Campbell and published by . This book was released on 2015 with total page 230 pages. Available in PDF, EPUB and Kindle. Book excerpt: Graphene holds great promise as a material for high-speed electronics, especially as Si technology approaches its performance limits. Growth of epitaxial graphene by thermal decomposition of SiC is considered to be one of the most promising production routes since it has the potential to produce homogenous, wafer-size films directly on a semi-insulating or semiconducting substrate. Furthermore, graphene's planar 2-D structure enables devices and circuit designs with standard top-down lithography and processing techniques. However, the growth mechanism of graphene on SiC is not very well understood and much work remains to be done to improve the morphology, domain size and epitaxial quality of the grown graphene in order to take advantage of the unique properties of the material. This research work was aimed at using a modified CVD chamber in the Cornell University Wide-Bandgap-Semiconductor Laboratory to optimize the growth of epitaxial graphene by controlled decomposition of 6H-SiC(0001) in an argon mediated gas flow at near atmospheric pressure. Grown films were characterized using Raman spectroscopy, atomic force microscopy, X-ray photoelectron spectroscopy, transmission electron microscopy, and electrical measurements. Uniform large-area monolayer and few-layer epitaxial graphene were successfully grown on SiC terraces of up to 8 [MICRO SIGN]m wide, and with Hall mobilities of up to 840 cm2/V.s. The as-grown graphene was found to be intrinsically electron doped with sheet carrier density in the range of 3 - 9 x 1012 cm-2. However, certain growth features that tended to disrupt growth by uniform step flow decomposition were observed. These included deep rounded pits at higher temperatures, shallow triangular pits, arrow-like incursions across terraces, finger growths, residual SiC islands on terraces, nucleation of graphene at multiple defect points on terraces, and extra graphene layers at step edges. Further research is required to determine the mechanisms of formation of these features and to determine how they can be eliminated or reduced. For the first time SiC grown epitaxial graphene films, transferred from the substrate by a special process, was imaged in plan-view by TEM. The TEM images, along with selected-area electron diffraction, showed that a bilayer film had the AB Bernal stacking.!

Download or read book The New International System of Units SI written by Ernst O. Göbel and published by John Wiley & Sons. This book was released on 2019-09-16 with total page 276 pages. Available in PDF, EPUB and Kindle. Book excerpt: The International System of Units, the SI, provides the foundation for all measurements in science, engineering, economics, and society. The SI has been fundamentally revised in 2019. The new SI is a universal and highly stable unit system based on invariable constants of nature. Its implementation rests on quantum metrology and quantum standards, which base measurements on the manipulation and counting of single quantum objects, such as electrons, photons, ions, and flux quanta. This book explains and illustrates the new SI, its impact on measurements, and the quantum metrology and quantum technology behind it. The book is based on the book ?Quantum Metrology: Foundation of Units and Measurements? by the same authors. From the contents: -Measurement -The SI (Système International d?Unités) -Realization of the SI Second: Thermal Beam Cs Clock, Laser Cooling, and the Cs Fountain Clock -Flux Quanta, Josephson Effect, and the SI Volt -Quantum Hall Effect, the SI Ohm, and the SI Farad -Single-Charge Transfer Devices and the SI Ampere -The SI Kilogram, the Mole, and the Planck constant -The SI Kelvin and the Boltzmann Constant -Beyond the present SI: Optical Clocks and Quantum Radiometry -Outlook

Download or read book Electron Transport Studies in Epitaxial Graphene on SiC written by and published by . This book was released on 2013 with total page 78 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Developing Epitaxial Graphene for the Purpose of Nanoelectronics written by Andrew James Strudwick and published by . This book was released on 2012 with total page 546 pages. Available in PDF, EPUB and Kindle. Book excerpt: Work presented here has been centered around the growth of epitaxial graphene via the thermal decomposition of 4H silicon carbide wafers. Improvements to ultra high vacuum growth procedures used within the research group have been made via the optimization of annealing times and temperatures. The optimization involved the use of surface science techniques such as low energy electron diffraction, atomic force microscopy, low energy electron microscopy and Raman spectroscopy amongst others to monitor changes in surface reconstructions, lateral grain sizes of graphene domains and graphene coverage on the surface as the growth parameters were varied. Improvements observed via the surface science techniques such as increasing the lateral domain grain sizes from 10s nm to 100s nm and increasing the graphene film coverage were linked to the betterment of the electronic properties of the graphene films (electronic measurements carried out by Graham Creeth), this linking lead to published work. The mechanical properties of these films were also measured via the use of Raman spectroscopy to probe the formation of strains within the graphene and compare growth carried out on the silicon carbide (0001) face to literature work carried out on the (0001) face to show evidence of graphene-substrate decoupling within the films grown here, this work also lead to a publication. Alternate growth procedures have also been investigated. This involved carrying out annealing processes in inert argon gas atmospheres. Atomically terraced substrates were produced via annealing in argon gas atmospheres at temperatures of ~1500°C. These terraced substrates where then subsequently graphitised by increasing the annealing temperature to ~1600°C allowing for a single stage substrate preparation and graphitisation process. A result not published elsewhere. A Nanoprobe system has been used to manipulate the graphene films grown under argon atmosphere and make 4-probe electrical transport measurements allowing sheet resistance measurements to be made.

Download or read book Graphene Nanoelectronics written by Hassan Raza and published by Springer Science & Business Media. This book was released on 2012-03-05 with total page 611 pages. Available in PDF, EPUB and Kindle. Book excerpt: Graphene is a perfectly two-dimensional single-atom thin membrane with zero bandgap. It has attracted huge attention due to its linear dispersion around the Dirac point, excellent transport properties, novel magnetic characteristics, and low spin-orbit coupling. Graphene and its nanostructures may have potential applications in spintronics, photonics, plasmonics and electronics. This book brings together a team of experts to provide an overview of the most advanced topics in theory, experiments, spectroscopy and applications of graphene and its nanostructures. It covers the state-of-the-art in tutorial-like and review-like manner to make the book useful not only to experts, but also newcomers and graduate students.

Download or read book Handbook of Graphene Volume 1 written by Edvige Celasco and published by John Wiley & Sons. This book was released on 2019-06-28 with total page 875 pages. Available in PDF, EPUB and Kindle. Book excerpt: This unique multidisciplinary 8-volume set focuses on the emerging issues concerning graphene materials and provides a shared platform for both researcher and industry. The Handbook of Graphene comprises a set of 8 individual volumes that brings an interdisciplinary perspective to accomplish a more detailed understanding of the interplay between the synthesis, structure, characterization, processing, applications and performance of the advanced materials. The Handbook of Graphene comprises 140 chapters from world renowned experts. Volume 1 is solely focused on Growth, Synthesis, and Functionalization of Graphene. Some of the important topics include but not limited to: Graphite in metallic materials-growths, structures and defects of spheroidal graphite in ductile iron; synthesis and quality optimization; methods of synthesis and physico-chemical properties of fluorographenes; graphene-SiC reinforced hybrid composite foam: response to high strain rate deformation; atomic structure and electronic properties of few-layer graphene on SiC(001); features and prospects for epitaxial graphene on SiC; graphitic carbon/graphene on Si(111) via direct deposition of solid-state carbon atoms: growth mechanism and film characterization; chemical reactivity and variation in electronical properties of graphene on Ni(111) and reduced graphene oxide; chlorophyll and graphene: a new paradigm of biomimetic symphony; graphene structures: from preparations to applications; three-dimensional graphene-based structures: production methods, properties and applications; electrochemistry of graphene materials; hydrogen functionalized graphene nanostructure material for spintronic application; the impact of uniaxial strain and defect pattern on magnetoelectronic and transport properties of graphene; exploiting graphene as an efficient catalytic template for organic transformations: synthesis, characterization and activity evaluation of graphene-based catalysts; exfoliated graphene based 2D materials; synthesis and catalytic behaviors; functionalization of graphene with molecules and/or nanoparticles for advanced applications; carbon allotropes "between diamond and graphite": how to create semiconductor properties in graphene and related structures.

Download or read book Tunneling Spectroscopy Studies of Epitaxial Graphene on SiC 0001 and Its Interfaces written by Andreas Axel Tomas Sandin and published by . This book was released on 2012 with total page 157 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Physics and Applications of Graphene written by Sergey Mikhailov and published by IntechOpen. This book was released on 2011-04-19 with total page 552 pages. Available in PDF, EPUB and Kindle. Book excerpt: The Stone Age, the Bronze Age, the Iron Age... Every global epoch in the history of the mankind is characterized by materials used in it. In 2004 a new era in material science was opened: the era of graphene or, more generally, of two-dimensional materials. Graphene is the strongest and the most stretchable known material, it has the record thermal conductivity and the very high mobility of charge carriers. It demonstrates many interesting fundamental physical effects and promises a lot of applications, among which are conductive ink, terahertz transistors, ultrafast photodetectors and bendable touch screens. In 2010 Andre Geim and Konstantin Novoselov were awarded the Nobel Prize in Physics for groundbreaking experiments regarding the two-dimensional material graphene. The two volumes Physics and Applications of Graphene - Experiments and Physics and Applications of Graphene - Theory contain a collection of research articles reporting on different aspects of experimental and theoretical studies of this new material.

Download or read book Graphene Nanoelectronics written by Raghu Murali and published by Springer Science & Business Media. This book was released on 2012-03-13 with total page 271 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book describes how will graphene can be used as a replacement for Silicon technology “ and the potential benefits of using graphene in a wide variety of electronic applications. Graphene has emerged as a potential candidate to replace traditional CMOS for a number of electronic applications; this book presents the latest advances in graphene nanoelectronics and details its use in alternative channel materials, on-chip interconnects, heat spreaders, RF transistors, NEMS, and sensors. The book also provides details on the various methods to grow graphene, including epitaxial, CVD, and chemical methods. With the growing interest in this material, this book serves as a spring-board for anyone trying to start working on this topic. The book is also suitable to experts who wish to update themselves with the latest findings in the field.