Download or read book Quantum Corrected Full band Semiclassical Monte Carlo Simulation Research of Charge Transport in Si Stressed Si and SiGe MOSFETs written by Xiaofeng Fan and published by . This book was released on 2006 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Dissertation Abstracts International written by and published by . This book was released on 2008 with total page 902 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Full band Monte Carlo Simulation of Electrons and Holes in Strained Si and SiGe written by Fabian M. Bufler and published by Herbert Utz Verlag. This book was released on 1998 with total page 196 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Monte Carlo Device Simulation written by Karl Hess and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 317 pages. Available in PDF, EPUB and Kindle. Book excerpt: Monte Carlo simulation is now a well established method for studying semiconductor devices and is particularly well suited to highlighting physical mechanisms and exploring material properties. Not surprisingly, the more completely the material properties are built into the simulation, up to and including the use of a full band structure, the more powerful is the method. Indeed, it is now becoming increasingly clear that phenomena such as reliabil ity related hot-electron effects in MOSFETs cannot be understood satisfac torily without using full band Monte Carlo. The IBM simulator DAMOCLES, therefore, represents a landmark of great significance. DAMOCLES sums up the total of Monte Carlo device modeling experience of the past, and reaches with its capabilities and opportunities into the distant future. This book, therefore, begins with a description of the IBM simulator. The second chapter gives an advanced introduction to the physical basis for Monte Carlo simulations and an outlook on why complex effects such as collisional broadening and intracollisional field effects can be important and how they can be included in the simulations. References to more basic intro the book. The third chapter ductory material can be found throughout describes a typical relationship of Monte Carlo simulations to experimental data and indicates a major difficulty, the vast number of deformation poten tials required to simulate transport throughout the entire Brillouin zone. The fourth chapter addresses possible further extensions of the Monte Carlo approach and subtleties of the electron-electron interaction.

Download or read book Monte Carlo Simulation of Semiconductor Devices written by C. Moglestue and published by Springer Science & Business Media. This book was released on 2013-04-17 with total page 343 pages. Available in PDF, EPUB and Kindle. Book excerpt: Particle simulation of semiconductor devices is a rather new field which has started to catch the interest of the world's scientific community. It represents a time-continuous solution of Boltzmann's transport equation, or its quantum mechanical equivalent, and the field equation, without encountering the usual numerical problems associated with the direct solution. The technique is based on first physical principles by following in detail the transport histories of indi vidual particles and gives a profound insight into the physics of semiconductor devices. The method can be applied to devices of any geometrical complexity and material composition. It yields an accurate description of the device, which is not limited by the assumptions made behind the alternative drift diffusion and hydrodynamic models, which represent approximate solutions to the transport equation. While the development of the particle modelling technique has been hampered in the past by the cost of computer time, today this should not be held against using a method which gives a profound physical insight into individual devices and can be used to predict the properties of devices not yet manufactured. Employed in this way it can save the developer much time and large sums of money, both important considerations for the laboratory which wants to keep abreast of the field of device research. Applying it to al ready existing electronic components may lead to novel ideas for their improvement. The Monte Carlo particle simulation technique is applicable to microelectronic components of any arbitrary shape and complexity.

Download or read book Full band Monte Carlo Simulation of Nanoscale Strained Silicon MOSFETs written by Fabian M. Bufler and published by . This book was released on 2003 with total page 79 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book A Full Band Monte Carlo Charge Transport Model for Nanoscale Silicon Devices Including Strain written by Björn Fischer and published by . This book was released on 2000 with total page 140 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book The Monte Carlo Method for Semiconductor Device Simulation written by Carlo Jacoboni and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 370 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume presents the application of the Monte Carlo method to the simulation of semiconductor devices, reviewing the physics of transport in semiconductors, followed by an introduction to the physics of semiconductor devices.

Download or read book 3D Electro thermal Monte Carlo Study of Transport in Confined Silicon Devices written by and published by . This book was released on 2012 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Monte Carlo Study of Current Variability in UTB SOI DG MOSFETs written by Craig Riddet and published by . This book was released on 2008 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The scaling of conventional silicon based MOSFETs is increasingly difficult into the nanometer regime due to short channel effects, tunneling and subthreshold leakage current. Ultra-thin body silicon-on-insulator based architectures offer a promising alternative, alleviating these problems through their geometry. However, the transport behaviour in these devices is more complex, especially for silicon thicknesses below 10 nm, with enhancement from band splitting and volume inversion competing with scattering from phonons, Coulomb interactions, interface roughness and body thickness fluctuation. Here, the effect of the last scattering mechanism on the drive current is examined as it is considered a significant limitation to device performance for body thicknesses below 5 nm. A simulation technique that properly captures non-equilibrium transport, includes quantum effects and maintains computational efficiency is essential for the study of this scattering mechanism. Therefore, a 3D Monte Carlo simulator has been developed which includes this scattering effect in an ab initio fashion, and quantum corrections using the Density Gradient formalism. Monte Carlo simulations using Hfrozen field approximation have been carried out to examine the dependence of mobility on silicon thickness in large, self averaging devices. This approximation is then used to carry out statistical studies of uniquely different devices to examine the variability of on-current. Finally, Monte Carlo simulations self consistent with Poisson s equation have been carried out to further investigate this mechanism.

Download or read book Performance Analysis of Double Gate MOSFET Using Monte Carlo Simulation written by Fawad H. Ismail and published by . This book was released on 2010 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: In this thesis, we explore the performance characteristics, speci cally the drain current drive, of the double gate silicon MOSFET device, using MoCa, the Monte Carlo simulator. Drain current performance is analyzed as a result of varying di erent parameters like oxide thickness, dielectric constant, and misalignment of top and bottom gates. An interesting result is obtained in the misalignment analysis, according to which overlap with source increases the drain current, even in the presence of drain underlap. Misalignment can be tolerable in devices up to a certain extent depending on the application. High- dielectrics and small oxide thickness are shown to improve the current drive. Comparison is made between quantum-corrected and classical simulation results. Change in potential and concentration pro les in the quantum-corrected simulation is the result of coupling between the Schr odinger and the Poisson equations. The drain current increase compared to a conventional MOSFET of the same dimensions and materials is shown to be signi cant. Main features of the full band quantum-corrected Monte Carlo simulator are delineated and its signi cance at the mesoscopic scale is discussed. Finally recent research on electrothermal analysis is reviewed and its importance in relation to the current work is explained. An outline of possible future work is presented for both the simulator and the device.

Download or read book Quantum Monte Carlo Approaches for Correlated Systems written by Federico Becca and published by Cambridge University Press. This book was released on 2017-11-30 with total page 287 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive introduction to state-of-the-art quantum Monte Carlo techniques for applications in strongly-interacting systems. Including variational wave functions, stochastic samplings, the variational technique, optimisation techniques, real-time dynamics and projection methods and recent developments on the continuum space. An extensive resource for students and researchers.

Download or read book Recent Advances In Quantum Monte Carlo Methods Part Ii written by William A Lester and published by World Scientific. This book was released on 2002-02-27 with total page 329 pages. Available in PDF, EPUB and Kindle. Book excerpt: This invaluable book consists of 16 chapters written by some of the most notable researchers in the field of quantum Monte Carlo, highlighting the advances made since Lester Jr.'s 1997 monograph with the same title. It may be regarded as the proceedings of the Symposium on Advances in Quantum Monte Carlo Methods held during the Pacifichem meeting in December 2000, but the contributions go beyond what was presented there.

Download or read book Monte Carlo Simulation in Statistical Physics written by Kurt Binder and published by Springer. This book was released on 1988-01-01 with total page 127 pages. Available in PDF, EPUB and Kindle. Book excerpt: The Monte Carlo method is a computer simulation method which uses random numbers to simulate statistical fluctuations. The method is used to model complex systems with many degrees of freedom. Probability distributions for these systems are generated numerically and the method then yields numerically exact information on the models. Such simulations may be used to see how well a model system approximates a real one or to see how valid the assumptions are in an analytical theory. A short and systematic theoretical introduction to the method forms the first part of this book. The second part is a practical guide with plenty of examples and exercises for the student. Problems treated by simple sampling (random and self-avoiding walks, percolation clusters, etc.) and by importance sampling (Ising models etc.) are included, along with such topics as finite-size effects and guidelines for the analysis of Monte Carlo simulations. The two parts together provide an excellent introduction to the theory and practice of Monte Carlo simulations.

Download or read book Monte Carlo Simulation in the Radiological Sci written by Richard L. Morin and published by Springer. This book was released on 1988-07-31 with total page 256 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Quantum Monte Carlo Methods in Condensed Matter Physics written by Masuo Suzuki and published by World Scientific Publishing Company Incorporated. This book was released on 1993 with total page 368 pages. Available in PDF, EPUB and Kindle. Book excerpt: General decomposition theory of exponential operators / M. Suzuki -- Quantum monte carlo and related methods : recent developments / N. Hatano and M. Suzuki -- Monte Carlo renormalization group study of the D=l XXZ model / M.A. Novotny and H.G. Evertz -- Overcoming critical slowing down in quantum Monte Carlo simulations / H.G. Evertz and M. Marcu -- Quantum manybody spin systems in random fields and anisotropies / P. Reed --Inhomogeneity effects in quantum spin systems / S. Miyashita, J. Behre and S. Yamamoto -- The quantum transfer matrix and its application to quantum spin chains / K. Kubo -- Transfer matrices in quantum many-body systems / T. Koma -- Monte Carlo calculations of elementary excitation / M. Takahashi -- The decoupled cell method of quantum Monte Carlo calculation / S. Homma -- Decoupled cell Monte Carlo study of the critical properties of the spin-1/2 ferromagnetic Heisenberg Model in three dimensions / R.J. Creswick and C.J. Sisson -- Variational Monte Carlo studies of correlated electrons / H. Shiba -- Quantum Monte Carlo simulation of multiband fermion systems and its application to superconductivity / K. Kuroki and H. Aoki -- Quantum Monte Carlo in the infinite dimensional limit / M. Jarrell, H. Akhlaghpour and Th. Pruschke -- Aspects of the sign problem / J.H. Samson -- Quantum simulations of the degenerate single-impurity Anderson model / J. Bonca and J. E. Gubernatis -- Quantum monte carlo simulation by auxiliary fields / S. Sorella -- Ground-state projection using auxiliary fields / S. Fahy -- Fermion simulations of correlated systems / M. Imada -- Dirty bosons in 2D : phases and phase transitions / N. Trivedi and M. Makivic -- Path-integral quantum Monte Carlo studies of the static and time-dependent thermodynamics of the vibrational properties of crystals / A.R. McGurn -- Relaxation of quantum systems in fluctuating media / M. Takasu

Download or read book Full Band Ensemble Monte Carlo Simulation of Silicon Devices written by Christopher Heechang Lee and published by . This book was released on 1994 with total page 186 pages. Available in PDF, EPUB and Kindle. Book excerpt: A Monte Carlo simulator for silicon devices has been developed. The band structure data for this self-consistent device simulator were computed using the empirical pseudopotential method. The ensemble Monte Carlo technique used in the simulations is described in detail. A homogeneous simulator, based on the same transport physics, is used to calibrate the device simulator as well as to indicate the shortcomings of more traditional simulators such as drift-diffusion based models, hydrodynamic and energy balance based models, and nonparabolic band approximation Monte Carlo models. A conventional metal-oxide-semiconductor field effect transistor (MOSFET) is simulated as a test case to validate the simulator. Finally, a floating gate memory element (non-volatile memory) is also examined. In this simulation, the Monte Carlo simulator is used as a post-processor to PISCES IIB in the interest of execution time. Despite the lack of self-consistency and rigor, the simulator is able to produce results which are in good agreement with experimental data.