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Book Purification  Doping and Defects in II VI Materials

Download or read book Purification Doping and Defects in II VI Materials written by R. Triboulet and published by . This book was released on 1996 with total page 297 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Purification  Doping and Defects in II IV Materials

Download or read book Purification Doping and Defects in II IV Materials written by R. Triboulet and published by . This book was released on 1995 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Purification  Controlled Doping and Crystal Growth of II VI Compound Semiconductors

Download or read book Purification Controlled Doping and Crystal Growth of II VI Compound Semiconductors written by George N. Webb and published by . This book was released on 1977 with total page 37 pages. Available in PDF, EPUB and Kindle. Book excerpt: The synthesis of various ultra high purity compounds of the II-VI group of semiconductor materials is described and tables of analytical data for each are included. The level of impurity concentration in synthesized ZnSe has been significantly lowered. The growth of crystals of II-VI compounds from the melt in the pressure furnace is reported. Included are data concerning doping of melt grown crystals with various amounts of selected impurities. The overall quality of the melt grown ZnSe has been improved.

Book Selected Topics in Group IV and II VI Semiconductors

Download or read book Selected Topics in Group IV and II VI Semiconductors written by Erich Kasper and published by North-Holland. This book was released on 1996-01-01 with total page 770 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book contains the proceedings of two symposia which brought together crystal growers, chemists and physicists from across the world. The first part is concerned with silicon molecular beam epitaxy and presents an overview of the most research being done in the field.Part two discusses the problems dealing with purification, doping and defects of II-VI materials, mainly of the important semiconductors CdTe and ZnSe. The focus is on materials science issues which are the key for a better understanding of these materials and for any industrial application.

Book Selected Topics in Group IV and II VI Semiconductors

Download or read book Selected Topics in Group IV and II VI Semiconductors written by E.H.C. Parker and published by Newnes. This book was released on 2012-12-02 with total page 465 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book contains the proceedings of two symposia which brought together crystal growers, chemists and physicists from across the world. The first part is concerned with silicon molecular beam epitaxy and presents an overview of the most research being done in the field. Part two discusses the problems dealing with purification, doping and defects of II-VI materials, mainly of the important semiconductors CdTe and ZnSe. The focus is on materials science issues which are the key for a better understanding of these materials and for any industrial application.

Book Handbook of II VI Semiconductor Based Sensors and Radiation Detectors

Download or read book Handbook of II VI Semiconductor Based Sensors and Radiation Detectors written by Ghenadii Korotcenkov and published by Springer Nature. This book was released on 2023-03-30 with total page 700 pages. Available in PDF, EPUB and Kindle. Book excerpt: The reference provides interdisciplinary discussion for diverse II-VI semiconductors with a wide range of topics. The third volume of a three volume set, the book provides an up-to-date account of the present status of multifunctional II-VI semiconductors, from fundamental science and processing to their applications as various sensors, biosensors, and radiation detectors, and based on them to formulate new goals for the further research. The chapters in this volume provide a comprehensive overview of the manufacture, parameters and principles of operation of these devices. The application of these devices in various fields such medicine, agriculture, food quality control, environment monitoring and others is also considered. The analysis carried out shows the great potential of II-VI semiconductor-based sensors and detectors for these applications. Considers solid-state radiation detectors based on semiconductors of II-VI group and their applications; Analyzes the advantages of II-VI compounds to develop chemical and optical gas and ion sensors; Describes all types of biosensors based on II-VI semiconductors and gives examples of their use in various fields.

Book II VI Semiconductor Materials and their Applications

Download or read book II VI Semiconductor Materials and their Applications written by MariaC. Tamargo and published by Routledge. This book was released on 2018-05-04 with total page 240 pages. Available in PDF, EPUB and Kindle. Book excerpt: II-VI Semiconductor Materials and Their Applications deals with II-VI compound semiconductors and the status of the two areas of current optoelectronics applications: blue-green emitters and IR detectors. Specifically, the growth, charactrtization, materials and device issues for these two applications are described. Emphasis is placed on the wide bandgap emitters where much progress has occurred recently.The book also presents new directions that have potential, future applications in optoelectronics for II-VI materials. In particular, it discusses the status of dilute magnetic semiconductors for mango-optical and electromagnetic devices, nonlinear optical properties, photorefractive effects and new materials and physics phenomena, such as self-organized, low-dimensional structures.II_VI Semiconductor Materials and Their Applications is a valuable reference book for researchers in the field as well as a textbook for materials science and applied physics courses.

Book Compound Semiconductor

Download or read book Compound Semiconductor written by and published by . This book was released on 1995 with total page 484 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Research in Purification and Single Growth of Ii vi Compounds

Download or read book Research in Purification and Single Growth of Ii vi Compounds written by Richard H. Fahrig and published by . This book was released on 1967 with total page 61 pages. Available in PDF, EPUB and Kindle. Book excerpt: A process for the purification of cadmium metal by multiple treatment steps is described. Impurities in cadmium, as determined by emission spectrographic, mass spectrographic, and atomic absorption are given in tabular form. The preparation of various pure semiconductor materials of the Group II-VI compound type is discussed and tables of analytical data for each are included. The level of impurity concentration in synthesized cadmium sulfide was significantly lowered. Less than 1 part per million (atomic) total impurities was found by the mass spectrograph in two batches of CdS. The growth of crystals of pure II-VI compounds and mixtures of compounds from the melt is reported. Included are data concerning doping of melt grown crystals with various elemental dopants, and, in the case of some compound semiconductors, the maximum doping levels possible by this method. (Author).

Book Research in Purification and Single Crystal Growth of II VI Compounds

Download or read book Research in Purification and Single Crystal Growth of II VI Compounds written by R. H. Fahrig and published by . This book was released on 1968 with total page 134 pages. Available in PDF, EPUB and Kindle. Book excerpt: A process for the purification of cadmium metal by multiple treatment steps is described. Impurities in cadmium, as determined by emission spectrographic, mass spectrographic, and atomic absorption are given in tabular form. The preparation of various pure semiconductor materials of the Group II-VI compound type is discussed and tables of analytical data for each are included. The level of impurity concentration in synthesized cadmium sulfide was significantly lowered. Less than 1 part per million (atomic) total impurities was found by the mass spectrograph in two batches of CdS. The growth of crystals of pure II-VI compounds and mixtures of compounds from the melt is reported. Included are data concerning doping of melt grown crystals with various elemental dopants, and, in the case of some compound semiconductors, the maximum doping levels possible by this method. The results of vapor phase crystal growth of CdS and ZnS, are given. Preliminary experiments with hydrothermal and gel diffusion crystal growth are reported. (Author).

Book Proceedings in Print

Download or read book Proceedings in Print written by and published by . This book was released on 1996 with total page 508 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Elements of Doping Engineering in Semiconductors

Download or read book Elements of Doping Engineering in Semiconductors written by and published by . This book was released on 1998 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Using defect thermodynamics, we discuss physical factors that affect doping limits in semiconductors. The dependencies of the defect formation enthalpy on the atomic chemical potentials and on the electron Fermi energy are demonstrated. These dependencies, in particular on the Fermi energy, lead to spontaneous formation of charge-compensating defects that can limit doping. Experimental data compiled for III-V, II-VI, and I-III-VI2 compounds support this view and further provide insight into the connections among different host materials. We argue that what matters is not the magnitude of the band gap that determines the dopability of a material, but rather, the relative position of the conduction-band minimum (in the case of n-doping) and the valence-band maximum (in the case of p-doping) with respect to vacuum.

Book Defects in Nanocrystals

Download or read book Defects in Nanocrystals written by Sergio Pizzini and published by CRC Press. This book was released on 2020-05-11 with total page 253 pages. Available in PDF, EPUB and Kindle. Book excerpt: Defects in Nanocrystals: Structural and Physico-Chemical Aspects discusses the nature of semiconductor systems and the effect of the size and shape on their thermodynamic and optoelectronic properties at the mesoscopic and nanoscopic levels. The nanostructures considered in this book are individual nanometric crystallites, nanocrystalline films, and nanowires of which the thermodynamic, structural, and optical properties are discussed in detail. The work: Outlines the influence of growth processes on their morphology and structure Describes the benefits of optical spectroscopies in the understanding of the role and nature of defects in nanostructured semiconductors Considers the limits of nanothermodynamics Details the critical role of interfaces in nanostructural behavior Covers the importance of embedding media in the physico-chemical properties of nanostructured semiconductors Explains the negligible role of core point defects vs. surface and interface defects Written for researchers, engineers, and those working in the physical and physicochemical sciences, this work comprehensively details the chemical, structural, and optical properties of semiconductor nanostructures for the development of more powerful and efficient devices.

Book Kokuritsu Kokkai Toshokan shoz   kagaku gijutsu kankei   bun kaigiroku mokuroku

Download or read book Kokuritsu Kokkai Toshokan shoz kagaku gijutsu kankei bun kaigiroku mokuroku written by Kokuritsu Kokkai Toshokan (Japan) and published by . This book was released on 1997 with total page 1596 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Narrow gap II VI Compounds for Optoelectronic and Electromagnetic Applications

Download or read book Narrow gap II VI Compounds for Optoelectronic and Electromagnetic Applications written by Peter Capper and published by Springer Science & Business Media. This book was released on 1997-10-31 with total page 632 pages. Available in PDF, EPUB and Kindle. Book excerpt: The field of narrow-gap II-VI materials is dominated by lhe compound mercury cadmium telluride, MCT or Hg1_ .. Cd .. Te. By varying the x value, material can be made to cover all the important infrared (lR) ranges of interest. It is probably true to say that MCT is the third most studied semiconductor after silicon and gallium arsenide. As current epitaxial layers of MCT are mainly grown on bulk CdTe family substrates these materials are included in this book, although strictly, of course, they are not 'narrow-gap'. This book is intended for readers who are either new to the field or are experienced workers in the field who need a comprehensive and up to date view of this rapidly expanding area. To satisfy the needs of the frrst group each chapter discusses the principles underlying each topic and some of the historical background before bringing the reader the most recent information available. For those currently in the field the book can be used as a collection of useful data, as a guide to the literature and as an overview of topics covering the wide range of work areas.

Book MBE Growth and Doping of Wide Band Gap II VI Semiconductors

Download or read book MBE Growth and Doping of Wide Band Gap II VI Semiconductors written by Robert Peter Vaudo and published by . This book was released on 1995 with total page 254 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Activation of Shallow Dopants in II VI Compounds

Download or read book Activation of Shallow Dopants in II VI Compounds written by and published by . This book was released on 1995 with total page 15 pages. Available in PDF, EPUB and Kindle. Book excerpt: The amphoteric native defect model is applied to the understanding of the variations in the dopant activation efficiency in II-VI compounds. It is shown that the location of the common energy reference, the Fermi level stabilization energy, relative to the band edges can be used to determine the doping induced reduction of the formation energy and the enhancement of the concentration of compensating native defects. The model is applied to the most extensively studied compound semiconductors as well as to ternary and quaternary alloys. The effects of the compound ionicity on the dopant activation are briefly discussed.