Download or read book Pulsed Laser Crystallization of Ferroelectric Piezoelectric Oxide Thin Films written by Adarsh Rajashekhar and published by . This book was released on 2017 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Integration of ferroelectric/piezoelectric thin films, such as those of lead zirconate titanate (PZT), with temperature sensitive substrates (complementary metal oxide semiconductors (CMOS), or polymers) would benefit from growth at substrate temperatures below 400C. However, high temperatures are usually required for obtaining good quality PZT films via conventional routes like rapid thermal processing (>550C). Those conditions are not compatible either with polymer substrates or completed CMOS circuits and dictate exploration of alternative methods to realize integration with such substrates.In part of this work, factors influencing KrF excimer laser induced crystallization of amorphous sputtered Pb(Zr0.30Ti0.70)O3 thin films at substrate temperatures

Download or read book Pulsed Laser Deposition of Ferroelectric Thin Films in Conjunction with Superconducting Oxides written by and published by . This book was released on 1994 with total page 18 pages. Available in PDF, EPUB and Kindle. Book excerpt: The possibility of combining ferroelectrics and superconductors has been of interest for use in memory storage devices. Additionally, superconductors offer crystal structures compatible to the epitaxial growth of the ferroelectric, Ba(0.6)Sr(0.4)TiO3 (BSTO), which is cubic at this stoichiometry. BSTO has a lattice constant of 3.94 A as compared to the superconducting Pr(2-x)Ce(x)CuO4 tetragonal single crystal which also has a lattice constant of a=3.94 A. (minor variations with Cerium content). In this study, ferroelectric thin films of BSTO were deposited on single crystals of Pr2CuO4 and Pr(2-x)Ce(x)CuO4. The optical constants of the substrates, single crystals of Pr2CuO4 and Pr(2-x)Ce(x)CuO4, were determined using Variable Angle Spectroscopic Ellipsometry (VASE) and the composition and crystal structure were examined using Rutherford Backscattering Spectrometry (RBS) with ion beam channeling. The substrate/film interfaces and the compositional variation in the films were also studied with RBS and with SEM/EDS. Glancing angle x-ray diffraction was used to verify the epitaxial nature of the films. The effect of the deposition parameters (laser repetition rate, oxygen backfill pressure, and deposition geometry) on the quality of the films was experimented with previously and only the optimized parameters were used. (jg).

Download or read book Synthesis and Properties of Ferroelectric Oxide Thin Films Grown by Pulsed Laser Deposition for Nonlinear Optical Waveguide Application written by Jong-Souk Yeo and published by . This book was released on 1998 with total page 190 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Thin Films and Heterostructures for Oxide Electronics written by Satishchandra B. Ogale and published by Springer Science & Business Media. This book was released on 2005-07-15 with total page 440 pages. Available in PDF, EPUB and Kindle. Book excerpt: Oxides form a broad subject area of research and technology development which encompasses different disciplines such as materials science, solid state chemistry, physics etc. The aim of this book is to demonstrate the interplay of these fields and to provide an introduction to the techniques and methodologies involving film growth, characterization and device processing. The literature in this field is thus fairly scattered in different research journals covering one or the other aspect of the specific activity. This situation calls for a book that will consolidate this information and thus enable a beginner as well as an expert to get an overall perspective of the field, its foundations, and its projected progress.

Download or read book Formation and Characterization of Ferroelectric Thin films Deposited by Pulsed laser Ablation written by Christopher Scarfone and published by . This book was released on 1991 with total page 208 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Pulsed Laser Deposition of Thin Films written by Robert Eason and published by John Wiley & Sons. This book was released on 2007-12-14 with total page 754 pages. Available in PDF, EPUB and Kindle. Book excerpt: Edited by major contributors to the field, this text summarizes current or newly emerging pulsed laser deposition application areas. It spans the field of optical devices, electronic materials, sensors and actuators, biomaterials, and organic polymers. Every scientist, technologist and development engineer who has a need to grow and pattern, to apply and use thin film materials will regard this book as a must-have resource.

Download or read book Cation Ordering and Ferroelectric Properties of Epitaxial Pb SC Ta O3 Thin Films Grown by Pulsed Laser Deposition written by Anuj Chopra and published by . This book was released on 2011 with total page 110 pages. Available in PDF, EPUB and Kindle. Book excerpt: PbSc0.5Ta0.5O3 (PST) is an example of relaxor ferroelectrics having two B-site cations in the perovskite structure, which gives rise to B-site cation-ordering and disordering. In addition, PST is a candidate for uncooled infrared detector applications. Epitaxial PST films were deposited on different single-crystal substrates and epitaxial electrode layers, respectively, by pulsed laser deposition. Films grown in optimised conditions were phase-pure perovskites. The crystallographic structure and epitaxial quality of the films were investigated by X-ray diffraction and transmission electron microscopy. Further, it was found that the degree of cation-ordering and the size of the ordered regions can be varied by changing the thickness of the films and by substrate-induced strain. Cation-ordered epitaxial PST thin films with good ferroelectric properties were also successfully deposited on buffered Si(100) substrates. Piezoelectric and dielectric non-linearities as well as phase transitions of different order were observed near room temperature.

Download or read book Development of Lead free Piezoelectric Thin Films by Pulsed Laser Deposition written by Maryam Abazari Torghabeh and published by . This book was released on 2010 with total page 193 pages. Available in PDF, EPUB and Kindle. Book excerpt: As a high performance piezoelectric material widely used in sensors, actuators and other electronic devices, lead zirconate titanate (PZT) ceramics have been the center of attention for many years. However, the toxicity of these materials and their exposure to the environment during processing steps, such as calcination, sintering, machining as well as problems in recycling and disposal have been major concerns regarding their usage all around the globe for the past couple of decades. Consequently, utilizing lead-based materials for many commercial applications have been recently restricted in Europe and Asia and measures are being taken in United States as well. Therefore, there is an urgent need for lead-free piezoelectrics whose properties are comparable to those of well-known PZT materials. Recently, the discovery of ultra-high piezoelectric activity in the ternary lead-free KNaNbO3-LiTaO3-LiSbO3 (KNN-LT-LS) and (Bi, Na)TiO3-(Bi, K)TiO3-BaTiO3 (BNT-BKT-BT) systems have given hope for alternatives to PZT. Furthermore, the demand for new generation of environment-friendly functional devices, utilizing piezoelectric materials, inspired a new surge in lead-free piezoelectric thin film research. In this study, an attempt has been made to explore the development of lead-free piezoelectric thin films by Pulsed Laser Deposition (PLD) on SrTiO3 substrate. While the growth and development process of KNN-LT-LS thin films was the primary goal of this thesis, a preliminary effort was also made to fabricate and characterize BNT-BKT-BT thin films. In a comprehensive and systematic process optimization study in conjunction with X-ray diffractometry, the phase evolution, stoichiometry, and growth orientation of the films are monitored as a function of deposition conditions including temperature and ambient oxygen partial pressure. Processing parameters such as substrate temperature and pressure are shown to be highly dominant in determining the phase and composition of the films. Oxygen partial pressure has shown to control the chemical composition of the films through solid-gaseous phase equilibrium and substrate temperature has mostly influenced the growth mode and microstructure. Findings of this study has shown that 300-500 nm single-phase epitaxial KNN-LT-LS and BNT-BKT-BT thin films could indeed be obtained at a temperature of 700-750 oC and 300-400 mTorr of oxygen partial pressure. Following a series of studies on effect of doping, it was revealed that addition of 1 mol% Mn to KNN-LT-LS composition resulted in a significant suppression of leakage current and enhancement of polarization saturation. A remanent polarization of 16 æC/cm2 and coercive field of 20 kV/cm were measured for such thin film, which are comparable to those of hard PZT counterparts. Also, a high remanent polarization and coercive field of 30 æC/cm2 and 95 kV/cm were achieved in 350 nm BNT-BKT-BT thin films. Longitudinal (d33) and transverse (e31, f) piezoelectric coefficients of KNN-LT-LS thin films were found to be 55 pm/V and -4.5 C/m2 respectively, prepared at the optimized conditions, whereas 350 nm BNT-BKT-BT thin films exhibited an e31, f of -2.25 C/m2. The results of this study present the great potential of KNN-LT-LS and BNT-BKT-BT thin films for piezoelectric MEMS devices and provide a baseline for future investigations on lead-free piezoelectric thin films.

Download or read book Analysis of the Ferroelectric Thin Films Deposited by Pulsed Laser Deposition on Oxide and Fluoride Substrates written by and published by . This book was released on 1994 with total page 18 pages. Available in PDF, EPUB and Kindle. Book excerpt: This work has been carried out as part of an ongoing investigation in which thin film ferroelectric phase shifters are being constructed, tested, and optimized. These phase shifters will be incorporated into multi-element phased array antennas where the beam steering material used was Ba(0.6)Sr(0.4)TiO3 (BSTO) and BSTO with 1 wt.% oxide additive. Thin films of BSTO have been deposited by pulsed laser deposition (PLD) onto various oxide and fluoride substrates. These include oxide substrates such as magnesium oxide (MgO), sapphire (Al2O3), lanthanum aluminate (LaAlO3), neodymium gallate (NdGaO3), and fluoride substrates such as rubidium manganese fluoride (RbMnF3). (jg).

Download or read book Growth of Semiconductor Thin Films by Pulsed Laser Deposition written by Yilu Li and published by . This book was released on 2016 with total page 97 pages. Available in PDF, EPUB and Kindle. Book excerpt: Pulsed ultraviolet light from a XeF excimer laser was used to grow thin films of zinc oxide and tin dioxide on (111) p-type silicon wafers within a versatile high vacuum laser deposition system. This pulsed laser deposition system was self-designed and self-built. Parameters such as pressure, target temperature, and distance from the target to the substrate can be adjusted in the system. Scanning electron microscopy, energy dispersive X-ray spectroscopy, X-ray diffraction spectroscopy, Raman spectroscopy and ellipsometry were used to analyze the structures and properties of ZnO and SnO2 thin films. The critical temperature required to fabricate a crystalline ZnO thin film by pulsed laser deposition was found and has been confirmed. For the SnO2 thin film, the critical temperature required to generate a crystalline structure could not be found because of the temperature limit of the substrate heater used in the experiment. In SnO2 thin films, thermal annealing has been used to convert into crystalline structure with (110), (101) and (211) orientations. After fabricating the amorphous SnO2 thin films, they were put into an oven with specific temperatures to anneal them. The minimum annealing temperature range was found for converting the amorphous SnO2 thin films into SnO2 thin films with a crystalline structure. Thermal annealing has also been applied to some amorphous ZnO thin films which were fabricated under the critical temperature required to produce crystalline ZnO thin films. The minimum annealing temperature range for amorphous ZnO thin films was found and only one orientation (002) shown after annealing. Laser annealing technology has also been applied for converting both amorphous ZnO and SnO2 thin films, and results show that this method was not well suited for this attempt. ZnO thin films and SnO2 thin films with a crystalline structure have inportant widely used in industry, for example, application in devices such as solar cells and UV or blue-light-emitting devices. The aim of this research is to help improving the manufacturing process of ZnO and SnO2 thin films.

Download or read book Pulsed Excimer Laser Deposition of Ferroelectric Thin Films written by S. B. Krupanidhi and published by . This book was released on 1991 with total page 16 pages. Available in PDF, EPUB and Kindle. Book excerpt: Pulsed UV excimer laser ablation was employed to deposit multi-axial, bi-axial and uni-axial ferroelectric compositions of PZT, bismuth titanate and lead germanate respectively. In general, a fluence lower than 2 J/cm2 caused a preferential evaporation of volatile components, resulting in stoichiometric imbalance. However, the fluences beyond 2 J/cm2 enabled the deposition of stoichiometric thin films of multi-component oxide systems. The intrinsic bombardment due to the energetic ablated species during the thin film deposition seemed to influence the composition, structure, orientation and the electrical properties. The electrical characterization of ferroelectric films indicated a dielectric constant of 800-1000, a P, of 32 micron C/cm2 and E sub c of 130KV/cm for polycrystalline PZT films and the corresponding quantities were measured to be 150, 7 micron C/cm2 and 20 KV/cm for in-situ crystallized c-axis preferred oriented bismuth titanate films. Lead germanate thin films oriented along c-axis (OO3) showed a dielectric constant of 30, a P sub r of 2.5 micron C/cm2 and E sub c of 55 KV/cm.

Download or read book Integration of Epitaxial Piezoelectric Thin Films on Silicon written by Shi Yin and published by . This book was released on 2013 with total page 194 pages. Available in PDF, EPUB and Kindle. Book excerpt: Recently, piezoelectric materials, like lead titanate zirconate Pb(ZrxTi1-x)O3 (PZT), zinc oxide ZnO, and the solid solution Pb(Mg1/3Nb2/3)O3-PbTiO3 (PMN-PT), increasingly receive intensive studies because of their innovative applications in the microelectromechanical systems (MEMS). In order to integrate them on silicon substrate, several preliminaries must be taken into considerations, e.g. buffer layer, bottom electrode. In this thesis, piezoelectric films (PZT and PMN-PT) have been successfully epitaxially grown on silicon and SOI (silicon-on-insulator) in the form of single crystal by sol-gel process. In fact, recent studies show that single crystalline films seem to possess the superior properties than that of polycrystalline films, leading to an increase of the performance of MEMS devices. The first objective of this thesis was to realize the epitaxial growth of single crystalline film of piezoelectric materials on silicon. The use of a buffer layer of gadolinium oxide(Gd2O3) or strontium titanate (SrTiO3 or STO) deposited by molecular beam epitaxy (MBE) has been studied in detail to integrate epitaxial PZT and PMN-PT films on silicon. For Gd2O3/Si(111) system, the study of X-ray diffraction (XRD) on the growth of PZT film shows that the film is polycrystalline with coexistence of the nonferroelectric parasite phase, i.e. pyrochlore phase. On the other hand, the PZT film deposited on STO/Si(001) substrate is successfully epitaxially grown in the form of single crystalline film. In order to measure the electrical properties, a layer of strontium ruthenate (SrRuO3 or SRO) deposited by pulsed laser deposition (PLD) has been employed for bottom electrode due to its excellent conductivity and perovskite crystalline structure similar to that of PZT. The electrical characterization on Ru/PZT/SRO capacitors demonstrates good ferroelectric properties with the presence of hysteresis loop. Besides, the relaxor ferroelectric PMN-PT has been also epitaxially grown on STO/Si and confirmed by XRD and transmission electrical microscopy (TEM). This single crystalline film has the perovskite phase without the appearance of pyrochlore. Moreover, the study of infrared transmission using synchrotron radiation has proven a diffused phase transition over a large range of temperature, indicating a typical relaxor ferroelectric material. The other interesting in the single crystalline PZT films deposited on silicon and SOI is to employ them in the application of MEMS devices, where the standard silicon techniques are used. The microfabrication process performed in the cleanroom has permitted to realize cantilevers and membranes in order to mechanically characterize the piezoelectric layers. Mechanical deflection under the application of an electric voltage could be detected by interferometry. Eventually, this characterization by interferometry has been studied using the modeling based on finite element method and analytic method. In the future, it will be necessary to optimize the microfabrication process of MEMS devices based on single crystalline piezoelectric films in order to ameliorate the electromechanical performance. Finally, the characterizations at MEMS device level must be developed for their utilization in the future applications.

Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1991 with total page 1102 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Ferroelectricity in Doped Hafnium Oxide written by Uwe Schroeder and published by Woodhead Publishing. This book was released on 2019-03-27 with total page 570 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices covers all aspects relating to the structural and electrical properties of HfO2 and its implementation into semiconductor devices, including a comparison to standard ferroelectric materials. The ferroelectric and field-induced ferroelectric properties of HfO2-based films are considered promising for various applications, including non-volatile memories, negative capacitance field-effect-transistors, energy storage, harvesting, and solid-state cooling. Fundamentals of ferroelectric and piezoelectric properties, HfO2 processes, and the impact of dopants on ferroelectric properties are also extensively discussed in the book, along with phase transition, switching kinetics, epitaxial growth, thickness scaling, and more. Additional chapters consider the modeling of ferroelectric phase transformation, structural characterization, and the differences and similarities between HFO2 and standard ferroelectric materials. Finally, HfO2 based devices are summarized. Explores all aspects of the structural and electrical properties of HfO2, including processes, modelling and implementation into semiconductor devices Considers potential applications including FeCaps, FeFETs, NCFETs, FTJs and more Provides comparison of an emerging ferroelectric material to conventional ferroelectric materials with insights to the problems of downscaling that conventional ferroelectrics face

Download or read book Atomically Smooth Epitaxial Ferroelectric Piezoelectric Thin Films for the Development of a Nonvolatile Ultrahigh Density Fast Low Voltage Radiation Hard Memory written by and published by . This book was released on 2003 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: The goal of this research program is to develop atomically smooth, nanostructured, single crystalline, epitaxial complex oxide thin films as the basic building block for a nonvolatile, ultrahigh density, fast, low voltage, radiation-hard memory. Oxide materials exhibit a broad diversity of behavior: transport properties that include superconducting, metallic, semiconducting and insulating ground states; magnetic properties ranging from ferromagnetism and colossal magnetoresistance to antiferromagnetism; and dielectric properties ranging from high-k insulating behavior to ferroelectricity, piezoelectricity, and pyroelectricity. The chemical and structural similarity of perovskite oxides makes it possible to combine these various functionalities into epitaxial heterostructures. In this work, the crystallinity and surface quality of epitaxial films and the quality of the interfaces between different oxides are important factors determining device performance.

Download or read book Magnetic Semiconducting Oxide Thin Films and Heterostructures by Pulsed Laser Deposition written by Gong Wai Leung and published by . This book was released on 2011 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Functional Complex Oxide Thin Films and Related Superlattices Grown Via Pulsed Laser Deposition written by Joseph A. Cianfrone and published by . This book was released on 2011 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: ABSTRACT: Oxide electronics offer a wide array of interesting properties, including ferromagnetism, ferroelectricity and superconductivity. This dissertation investigates the transport, magnetic, and structural properties of several perovskite and spinel material systems, with particular interest in their manipulation at the nanoscale through the growth of functional heterostructures. Spinel phase ZnCo2O4 is investigated as a ferromagnetic semiconductor whose carrier type changes with oxygen concentration. The perovskite system of K(Ta, Nb)O3 is investigated for its interesting properties as a solid solution which exhibits a ferroelectric transition dependent on composition. Its thin film epitaxial growth modes are investigated via reflection high energy electron diffraction, with particular attention paid to the volatile potassium ion. Superlattices of K(Ta, Nb)O3 and SrTiO3 are also investigated for the possibility of dielectric enhancement and conductive interfaces. The multiferroic properties of BaFeO3 K(Ta, Nb)O3 superlattices are investigated, with particular attention paid to the role of magnetoelectric coupling and strain as stabilizing mechanisms.