Download or read book Pulsed laser Annealing of Ion implanted Silicon written by Dick Hoonhout and published by . This book was released on 1980 with total page 123 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Dynamical Aspects of Pulsed Laser Annealing of Ion implanted Silicon written by Yoshihiko Kanemitsu and published by . This book was released on 1983 with total page 28 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Laser Annealing of Ion Implanted CZ Silicon for Solar Cell Junction Formation written by J. S. Katzeff and published by . This book was released on 1981 with total page 36 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Picosecond Dynamics of Pulsed Laser Annealing of Ion implanted Silicon written by Yoshihiko Kanemitsu and published by . This book was released on 1983 with total page 17 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Laser Annealing of Ion Implanted CZ Silicon for Solar Cell Junction Formation written by and published by . This book was released on 1981 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Results on a contract to evaluate the merits of large spot size pulsed laser annealing of ion implanted silicon wafers for junction formation of solar cells are presented. Three inch diameter cells were fabricated for reference by furnace annealing of the ion implanted wafers. Conversion efficiencies on these cells ranged from 12.3% to 14.3%, with and without a BSF. Scaled-up size cells, from 2 x 2 cm to 2 x 4 cm, were fabricated using a two-step 25% overlap pulsed laser annealing process. Conversion efficiencies up to 15.4% were achieved. Pulsed laser annealing of textured surface wafers proved unacceptable based on the subpar electrical performances of fabricated 2 x 2 cm and 2 x 4 cm cells. Further laser annealing work using textured surfaces has been discontinued. SIMS profiling of 11B and/or 49BF2 ion implanted species for back surface field followed by pulse annealing, both by electron beam and laser, revealed that additional work is required for optimization. The process verification phase of the contract was initiated for small (2 x 2 cm) and large (3 in. dia) cells using the surviving processing candidates showing best promise. A high throughput laser system was conceptualized which will accommodate three (3) inch diameter wafers at a rate of one per second.

Download or read book Laser Annealing of Ion Implanted CZ Silicon for Solar Cell Junction Formation Quarterly Report written by and published by . This book was released on 1980 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: A project to evaluate the merits of large spot size pulsed laser annealing of ion implanted silicon wafers for junction formation on solar cells is described. A Q-switched Nd:Glass laser system is used operating in the 1064 (regular) and 532 (with frequency doubler) nm wavelengths. The laser output is in excess of 30 joules with a 20 to 50 ns pulse duration. Material used in this investigation is 3-inch diameter CZ silicon, P-type 0.014 inches thick, 10.cap omega.-cm resistivity, 100 orientation. Three wafer surface conditions are being evaluated in this pulse annealing investigation: chem-polished, texture etched, and flash etched. Annealing was performed with and without beam homogenization. Both modes showed excellent lattice recovery from the implant-induced damage as analyzed using Rutherford backscattering techniques. Homogenization of the beam was performed using a fused silica rod configured with a 90° bend. The unhomogenized annealing was performed using a plano-concave lens. Fabrication of laser annealed cells using both modes is forthcoming.

Download or read book Comments on the Plasma Annealing Model to Explain the Dynamics of Pulsed Laser Annealing of Ion Implanted Silicon written by Anjan Bhattacharyya and published by . This book was released on 1981 with total page 2 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Laser Annealing of Ion Implanted CZ Silicon for Solar Cell Junction Formation Quarterly Report written by and published by . This book was released on 1980 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Results on a contract to evaluate the merits of large spot size pulsed laser annealing of ion implanted silicon wafers for junction formation in solar cells are reported. Investigations on homogenization of the laser beam were continued. In addition to the 30 mm diameter fused silica rod with a 90° bend configuration, quartz tubes were obtained and briefly tried. Best results were obtained with the rod homogenizer. Laser annealing experimentation resulted in complete recrystallization of ion implanted silicon substrates as confirmed by TEM and RBS analysis. Single pulse laser annealed, functional cells (2 x 2cm) were fabricated using varying process conditions, yielding conversion efficiencies predominantly in the 13% to slightly less than 15%.

Download or read book A MELTING MODEL FOR PULSING LASER ANNEALING OF ION IMPLANTED SILICON SEMICONDUCTOR written by and published by . This book was released on 1991 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Laser Annealing of Ion Implanted Silicon written by and published by . This book was released on 1978 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The physical and electrical properties of ion implanted silicon annealed with high powered ruby laser radiation are summarized. Results show that pulsed laser annealing can lead to a complete removal of extended defects in the implanted region accompanied by incorporation of dopants into lattice sites even when their concentration far exceeds the solid solubility limit.

Download or read book Ion Implantation and Beam Processing written by J. S. Williams and published by Academic Press. This book was released on 2014-06-28 with total page 432 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ion Implantation and Beam Processing covers the scientific and technological advances in the fields of ion implantation and beam processing. The book discusses the amorphization and crystallization of semiconductors; the application of the Boltzmann transport equation to ion implantation in semiconductors and multilayer targets; and the high energy density collision cascades and spike effects. The text also describes the implantation of insulators (ices and lithographic materials); the ion-bombardment-induced compositions changes in alloys and compounds; and the fundamentals and applications of ion beam and laser mixing. The high-dose implantation and the trends of ion implantation in silicon technology are also considered. The book further tackles the implantation in gaAs technology and the contacts and interconnections on semiconductors. Engineers and people involved in microelectronics will find the book invaluable.

Download or read book Laser Annealing of Semiconductors written by J Poate and published by Elsevier. This book was released on 2012-12-02 with total page 577 pages. Available in PDF, EPUB and Kindle. Book excerpt: Laser Annealing of Semiconductors deals with the materials science of surfaces that have been subjected to ultrafast heating by intense laser or electron beams. This book is organized into 13 chapters that specifically tackle transient annealing of compound semiconductors. After briefly dealing with an overview of laser annealing, this book goes on discussing the concepts of solidification and crystallization pertinent to the field. These topics are followed by discussions on the main mechanisms of interaction of photon and electron beams with condensed matter; the calculation of thermophysical properties of crystalline materials; and high-speed crystal growth by laser annealing of ion-implanted silicon. The subsequent chapters describe the microstructural and topographical properties of annealed semiconductor layers and the epitaxy of ion-implanted silicon irradiated with a laser or electron beam single pulse. This text also explores the electronic and surface properties and the continuous-wave beam processing of semiconductors. The concluding chapters cover various reactions in metal-semiconductor systems, such as fast and laser-induced melting, solidification, mixing, and quenching. Laser-induced interactions in metal-semiconductor systems and the factors involved in control of the heat treatment process are also discussed in these chapters. Materials scientists and researchers and device engineers will find this book invaluable.

Download or read book EPR of Ion implanted Laser annealed Silicon written by and published by . This book was released on 1979 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Electron paramagnetic resonance and ion backscattering measurements were made on ion-implanted, pulsed laser-annealed silicon. For phosphorus-implanted silicon (3 x 1013 200 keV P/cm2) the electrical activity of the implanted donors is restored after laser annealing with greater than or equal to 1.8 J/cm2. Silicon made amorphous with 2 x 1015 200 keV Si/cm2 and implanted with 3 x 1013 200 keV P/sup +//cm2 can be restored to crystallinity after laser annealing, but electrical activity of the P was not restored due to residual defects for laser energies less than or equal to 3 J/cm2. Electrical activity can be restored, at least in part, for amorphous silicon implanted at lower energies (approx. = 50 keV). We also observed that N2 reacts with amorphous silicon surfaces to form silicon-nitride. Under laser annealing the N is redistributed and exists as an N interstitial within the implanted layer.

Download or read book Comparison of Pulsed Electron Beam annealed and Pulsed Ruby Laser annealed Ion implanted Silicon 100keV As written by and published by . This book was released on 1978 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Recently two new techniques, pulsed electron beam annealing and pulsed laser annealing, have been developed for processing ion-implanted silicon. These two types of anneals have been compared using ion-channeling, ion back-scattering, and transmission electron microscopy (TEM). Single crystal samples were implanted with 100 keV As ions to a dose of approx. 1 x 1016 ions/cm2 and subsequently annealed by either a pulsed Ruby laser or a pulsed electron beam. Our results show in both cases that the near-surface region has melted and regrown epitaxially with nearly all of the implanted As (97 to 99%) incroporated onto lattice sites. The analysis indicates that the samples are essentially defect free and have complete electrical recovery.

Download or read book Some Studies Related to Laser Annealing of Ion Implanted Silicon written by Göran Alestig and published by . This book was released on 1986 with total page 44 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Pulsed CO2 Laser Annealing of Ion implanted Silicon written by and published by . This book was released on 1984 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: From studies of time-resolved reflectivity and microstructural changes, we have obtained direct evidence of CO2 laser-induced melting above a threshold energy density. Results of the optical measurements, transmission electron microscopy, and secondary ion mass spectrometry are reported. The measurements show that melt depths as deep as 1 .mu.m can be achieved with pulsed CO2 laser radiation. By using differential absorption between layers with different free-carrier densities, we find that a CO2 laser can be used to melt regions which are embedded in the material. It is likely that this observed phenomenon is impossible to obtain with a visible or ultraviolet laser.

Download or read book Laser Processing of High Dose Ion Implanted Si written by Arto Lietoila and published by . This book was released on 1981 with total page 156 pages. Available in PDF, EPUB and Kindle. Book excerpt: