Download or read book Pulsed CO2 Laser Annealing of Ion implanted Silicon written by and published by . This book was released on 1984 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: From studies of time-resolved reflectivity and microstructural changes, we have obtained direct evidence of CO2 laser-induced melting above a threshold energy density. Results of the optical measurements, transmission electron microscopy, and secondary ion mass spectrometry are reported. The measurements show that melt depths as deep as 1 .mu.m can be achieved with pulsed CO2 laser radiation. By using differential absorption between layers with different free-carrier densities, we find that a CO2 laser can be used to melt regions which are embedded in the material. It is likely that this observed phenomenon is impossible to obtain with a visible or ultraviolet laser.
Download or read book Laser Annealing of Ion Implanted CZ Silicon for Solar Cell Junction Formation written by J. S. Katzeff and published by . This book was released on 1981 with total page 36 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Dynamical Aspects of Pulsed Laser Annealing of Ion implanted Silicon written by Yoshihiko Kanemitsu and published by . This book was released on 1983 with total page 28 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Laser Annealing of Ion Implanted CZ Silicon for Solar Cell Junction Formation written by and published by . This book was released on 1981 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Results on a contract to evaluate the merits of large spot size pulsed laser annealing of ion implanted silicon wafers for junction formation of solar cells are presented. Three inch diameter cells were fabricated for reference by furnace annealing of the ion implanted wafers. Conversion efficiencies on these cells ranged from 12.3% to 14.3%, with and without a BSF. Scaled-up size cells, from 2 x 2 cm to 2 x 4 cm, were fabricated using a two-step 25% overlap pulsed laser annealing process. Conversion efficiencies up to 15.4% were achieved. Pulsed laser annealing of textured surface wafers proved unacceptable based on the subpar electrical performances of fabricated 2 x 2 cm and 2 x 4 cm cells. Further laser annealing work using textured surfaces has been discontinued. SIMS profiling of 11B and/or 49BF2 ion implanted species for back surface field followed by pulse annealing, both by electron beam and laser, revealed that additional work is required for optimization. The process verification phase of the contract was initiated for small (2 x 2 cm) and large (3 in. dia) cells using the surviving processing candidates showing best promise. A high throughput laser system was conceptualized which will accommodate three (3) inch diameter wafers at a rate of one per second.
Download or read book Energy Research Abstracts written by and published by . This book was released on 1989 with total page 644 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Research in Progress written by and published by . This book was released on 1982 with total page 236 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Theoretical Considerations Regarding Pulsed CO2 Laser Annealing of Silicon written by Anjan Bhattacharyya and published by . This book was released on 1980 with total page 6 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Dynamics of Pulsed CO2 Laser Annealing of Silicon written by Anjan Bhattacharyya and published by . This book was released on 1981 with total page 7 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Laser Annealing of Ion Implanted CZ Silicon for Solar Cell Junction Formation Quarterly Report written by and published by . This book was released on 1980 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Results on a contract to evaluate the merits of large spot size pulsed laser annealing of ion implanted silicon wafers for junction formation in solar cells are reported. Investigations on homogenization of the laser beam were continued. In addition to the 30 mm diameter fused silica rod with a 90° bend configuration, quartz tubes were obtained and briefly tried. Best results were obtained with the rod homogenizer. Laser annealing experimentation resulted in complete recrystallization of ion implanted silicon substrates as confirmed by TEM and RBS analysis. Single pulse laser annealed, functional cells (2 x 2cm) were fabricated using varying process conditions, yielding conversion efficiencies predominantly in the 13% to slightly less than 15%.
Download or read book Laser Annealing Processes in Semiconductor Technology written by Fuccio Cristiano and published by Woodhead Publishing. This book was released on 2021-04-21 with total page 428 pages. Available in PDF, EPUB and Kindle. Book excerpt: Laser Annealing Processes in Semiconductor Technology: Theory, Modeling and Applications in Nanoelectronics synthesizes the scientific and technological advances of laser annealing processes for current and emerging nanotechnologies. The book provides an overview of the laser-matter interactions of materials and recent advances in modeling of laser-related phenomena, with the bulk of the book focusing on current and emerging (beyond-CMOS) applications. Reviewed applications include laser annealing of CMOS, group IV semiconductors, superconducting materials, photonic materials, 2D materials. This comprehensive book is ideal for post-graduate students, new entrants, and experienced researchers in academia, research and development in materials science, physics and engineering. - Introduces the fundamentals of laser materials and device fabrication methods, including laser-matter interactions and laser-related phenomena - Addresses advances in physical modeling and in predictive simulations of laser annealing processes such as atomistic modeling and TCAD simulations - Reviews current and emerging applications of laser annealing processes such as CMOS technology and group IV semiconductors
Download or read book Some Studies Related to Laser Annealing of Ion Implanted Silicon written by Göran Alestig and published by . This book was released on 1986 with total page 44 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Materials Analysis by Ion Channeling written by Leonard C. Feldman and published by Academic Press. This book was released on 2012-12-02 with total page 321 pages. Available in PDF, EPUB and Kindle. Book excerpt: Our intention has been to write a book that would be useful to people with a variety of levels of interest in this subject. Clearly it should be useful to both graduate students and workers in the field. We have attempted to bring together many of the concepts used in channeling beam analysis with an indication of the origin of the ideas within fundamental channeling theory. The level of the book is appropriate to senior under-graduates and graduate students who have had a modern physics course work in related areas of materials science and wish to learn more about the "channeling" probe, its strengths, weaknesses, and areas of further potential application. To them we hope we have explained this apparent paradox of using mega-electron volt ions to probe solid state phenomena that have characteristic energies of electron volts.
Download or read book Laser Annealing of Ion Implanted CZ Silicon for Solar Cell Junction Formation Quarterly Report written by and published by . This book was released on 1980 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: A project to evaluate the merits of large spot size pulsed laser annealing of ion implanted silicon wafers for junction formation on solar cells is described. A Q-switched Nd:Glass laser system is used operating in the 1064 (regular) and 532 (with frequency doubler) nm wavelengths. The laser output is in excess of 30 joules with a 20 to 50 ns pulse duration. Material used in this investigation is 3-inch diameter CZ silicon, P-type 0.014 inches thick, 10.cap omega.-cm resistivity, 100 orientation. Three wafer surface conditions are being evaluated in this pulse annealing investigation: chem-polished, texture etched, and flash etched. Annealing was performed with and without beam homogenization. Both modes showed excellent lattice recovery from the implant-induced damage as analyzed using Rutherford backscattering techniques. Homogenization of the beam was performed using a fused silica rod configured with a 90° bend. The unhomogenized annealing was performed using a plano-concave lens. Fabrication of laser annealed cells using both modes is forthcoming.
Download or read book Pulsed CO Sub 2 Laser Processing of Thin Ion implanted Silicon Layers written by and published by . This book was released on 1988 with total page 5 pages. Available in PDF, EPUB and Kindle. Book excerpt: We show that extremely shallow ({approx lt} 800 Å) melt depths can be easily obtained by irradiating a thin heavily doped silicon layer with a CO2 laser pulse. Since the absorption of the CO2 laser pulse is dominated by free-carrier transitions, the beam heating occurs primarily in the thin degenerately doped film. For CO2 pulse-energy densities exceeding a threshold value, surface melting occurs and the reflectivity of the incident laser pulse increases abruptly to about 90%. This large increase in the reflectivity acts like a switch to reflect almost all of the energy in the remainder of the pulse, thereby greatly reducing the amount of energy available to drive the melt front to deeper depths in the material. Transmission electron microscopy shows no extended defects in the near-surface region after laser irradiation, and van der Pauw electrical measurements verify that 100% of the implanted arsenic dopant is electrically active. 8 refs., 3 figs., 1 tab.
Download or read book Laser Annealing of Ion Implanted Silicon written by and published by . This book was released on 1980 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Pulsed laser annealing of ion implanted silicon leads to the formation of supersaturated alloys by nonequilibrium crystal growth processes at the interface occurring during liquid phase epitaxial regrowth. The interfacial distribution coefficients from the melt (k') and the maximum substitutional solubilities (C/sub s//sup max/) are far greater than equilibrium values. Both K' and C/sub s//sup max/ are functions of growth velocity. Mechanisms limiting substitutional solubilities are discussed. 5 figures, 2 tables.
Download or read book ERDA Energy Research Abstracts written by and published by . This book was released on 1985 with total page 676 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Ion Implantation Equipment and Techniques written by H. Ryssel and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 564 pages. Available in PDF, EPUB and Kindle. Book excerpt: The Fourth International Conference on Ion Implantation: Equipment and Tech niques was held at the Convention Center in Berchtesgaden, Bavaria, Germany, from September 13 to 17, 1982. It was attended by more than 200 participants from over 20 different countries. Severa1 series of conferences have dealt with the app1ication of ion implantation to semiconductors and other materials (Thousand Oaks, 1970; Garmisch-Partenkirchen, 1971; Osaka, 1974; Warwick, 1975; Bou1der, 1975; Budapest, 1978; and Albany, 1980). Another series of conferences has been devoted to implantation equipment and techniques (S- ford, 1977; Trento, 1978; and Kingston, 1980). This conference was the fourth in the 1atter series. Twe1ve invited papers and 55 contributed papers covered the areas of ion implantation equipment, measuring techniques, and app1ica tions of implantation to metals and semiconductors. A schoo1 on ion implantation was held in connection with the conference, and the 1ectures presented at this schoo1 were pub1ished as Vo1. 10 of the Springer Series in E1ectrophysics under the tit1e Ion Implantation Techniques (edited by H. Rysse1 and H. G1awischnig). During the conference, space was also provided for presentations and demonstrations by manufacturers of ion implantation equipment. Once again, this conference provided a forum for free discussion among implantation specia1ists in industry as we11 as research institutions. Espe cially effective in stimulating a free exchange of information was the daily get-together over free beer at the "Bier Adam". Many people contributed to the success of this conference.
