Download or read book Pseudomorphic HEMT Technology and Applications written by R.L. Ross and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 352 pages. Available in PDF, EPUB and Kindle. Book excerpt: PHEMT devices and their incorporation into advanced monolithic integrated circuits is the enabling technology for modern microwave/millimeter wave system applications. Although still in its infancy, PHEMT MIMIC technology is already finding applications in both military and commercial systems, including radar, communication and automotive technologies. The successful team in a globally competitive market is one in which the solid-state scientist, circuit designer, system engineer and technical manager are cognizant of those considerations and requirements that influence each other's function. This book provides the reader with a comprehensive review of PHEMT technology, including materials, fabrication and processing, device physics, CAD tools and modelling, monolithic integrated circuit technology and applications. Readers with a broad range of specialities in one or more of the areas of materials, processing, device physics, circuit design, system design and marketing will be introduced quickly to important basic concepts and techniques. The specialist who has specific PHEMT experience will benefit from the broad range of topics covered and the open discussion of practical issues. Finally, the publication offers an additional benefit, in that it presents a broad scope to both the researcher and manager, both of whom must be aware and educated to remain relevant in an ever-expanding technology base.
Download or read book Handbook for III V High Electron Mobility Transistor Technologies written by D. Nirmal and published by CRC Press. This book was released on 2019-05-14 with total page 446 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book focusses on III-V high electron mobility transistors (HEMTs) including basic physics, material used, fabrications details, modeling, simulation, and other important aspects. It initiates by describing principle of operation, material systems and material technologies followed by description of the structure, I-V characteristics, modeling of DC and RF parameters of AlGaN/GaN HEMTs. The book also provides information about source/drain engineering, gate engineering and channel engineering techniques used to improve the DC-RF and breakdown performance of HEMTs. Finally, the book also highlights the importance of metal oxide semiconductor high electron mobility transistors (MOS-HEMT). Key Features Combines III-As/P/N HEMTs with reliability and current status in single volume Includes AC/DC modelling and (sub)millimeter wave devices with reliability analysis Covers all theoretical and experimental aspects of HEMTs Discusses AlGaN/GaN transistors Presents DC, RF and breakdown characteristics of HEMTs on various material systems using graphs and plots
Download or read book RFIC and MMIC Design and Technology written by I.D. Robertson and published by IET. This book was released on 2001-11-30 with total page 583 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book gives an in-depth account of GaAs, InP and SiGe, technologies and describes all the key techniques for the design of amplifiers, ranging from filters and data converters to image oscillators, mixers, switches, variable attenuators, phase shifters, integrated antennas and complete monolithic transceivers.
Download or read book Handbook of RF and Microwave Power Amplifiers written by John L. B. Walker and published by Cambridge University Press. This book was released on 2012 with total page 705 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is a one-stop guide for circuit designers and system/device engineers, covering everything from CAD to reliability.
Download or read book Proceedings of the Technology and the Mine Problem Symposium written by Albert M. Bottoms and published by . This book was released on 1996 with total page 756 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Proceedings of the 11th International Conference on Robotics Vision Signal Processing and Power Applications written by Nor Muzlifah Mahyuddin and published by Springer Nature. This book was released on 2022-02-11 with total page 1124 pages. Available in PDF, EPUB and Kindle. Book excerpt: The proceeding is a collection of research papers presented at the 11th International Conference on Robotics, Vision, Signal Processing & Power Applications (RoViSP 2021). The theme of RoViSP 2021 “Enhancing Research and Innovation through the Fourth Industrial Revolution (IR 4.0)” served as a platform for researchers, scientists, engineers, academicians as well as industrial professionals from all around the globe to present and exchange their research findings and development activities through oral presentations. The book covers various topics of interest, including: Robotics, Control, Mechatronics and Automation Telecommunication Systems and Applications Electronic Design and Applications Vision, Image and Signal Processing Electrical Power, Energy and Industrial Applications Computer and Information Technology Biomedical Engineering and Applications Intelligent Systems Internet-of-things Mechatronics Mobile Technology
Download or read book Advances in Energy and Control Systems written by Afzal Sikander and published by Springer Nature. This book was released on with total page 582 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Quantum Wells Wires and Dots written by Paul Harrison and published by John Wiley & Sons. This book was released on 2016-04-26 with total page 624 pages. Available in PDF, EPUB and Kindle. Book excerpt: Quantum Wells, Wires and Dots provides all the essential information, both theoretical and computational, to develop an understanding of the electronic, optical and transport properties of these semiconductor nanostructures. The book will lead the reader through comprehensive explanations and mathematical derivations to the point where they can design semiconductor nanostructures with the required electronic and optical properties for exploitation in these technologies. This fully revised and updated 4th edition features new sections that incorporate modern techniques and extensive new material including: Properties of non-parabolic energy bands Matrix solutions of the Poisson and Schrödinger equations Critical thickness of strained materials Carrier scattering by interface roughness, alloy disorder and impurities Density matrix transport modelling Thermal modelling Written by well-known authors in the field of semiconductor nanostructures and quantum optoelectronics, this user-friendly guide is presented in a lucid style with easy to follow steps, illustrative examples and questions and computational problems in each chapter to help the reader build solid foundations of understanding to a level where they can initiate their own theoretical investigations. Suitable for postgraduate students of semiconductor and condensed matter physics, the book is essential to all those researching in academic and industrial laboratories worldwide. Instructors can contact the authors directly ([email protected] / [email protected]) for Solutions to the problems.
Download or read book Transmit Receive Modules for Radar and Communication Systems written by Rick Sturdivant and published by Artech House. This book was released on 2015-12-01 with total page 268 pages. Available in PDF, EPUB and Kindle. Book excerpt: The use of electronically scanned phased arrays is increasing in systems such as radar, wireless networks, and satellite ground terminals. An important and necessary component for these systems is the transmit receive (T/R) module, which provides the amplification and electronic beam steering that is required for proper function. This new resource presents a comprehensive overview of all design, fabrication, integration, and implementation issues associated with T/R modules for radar and communications. This book provides engineers and researchers with practical designs and 44 examples of analysis, circuits, and components used in T/R modules. It also provides a solid explanation of the theory for how T/R modules operate and how they can be optimized. In addition, this book shows how the latest technical advances in silicon germanium (SiGe) and gallium nitride (GaN) are allowing levels of performance that were previously unachievable. The book concludes with informative chapters on testing, cost considerations, and the future of next generation T/R modules.
Download or read book APTIKOM Journal on Computer Science and Information Technologies CSIT Vol 6 No 1 March 2021 written by APTIKOM Journal on Computer Science and Information Technologies (CSIT) and published by IAIC BANGUN BANGSA . This book was released on 2021-05-31 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: CSIT (APTIKOM Journal on Computer Science and Information Technologies) Published by APTIKOM & Organized by Aptikom Publisher and Pandawan. CSIT is published three a year, every March, July, and November.
Download or read book Frontiers of Thin Film Technology written by and published by Academic Press. This book was released on 2000-11-07 with total page 476 pages. Available in PDF, EPUB and Kindle. Book excerpt: Frontiers of Thin Film Technology, Volume 28 focuses on recent developments in those technologies that are critical to the successful growth, fabrication, and characterization of newly emerging solid-state thin film device architectures. Volume 28 is a condensed sampler of the Handbook for use by professional scientists, engineers, and students involved in the materials, design, fabrication, diagnostics, and measurement aspects of these important new devices.
Download or read book Semiconductor Physical Electronics written by Sheng S. Li and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 514 pages. Available in PDF, EPUB and Kindle. Book excerpt: The purpose of this book is to provide the reader with a self-contained treatment of fundamen tal solid state and semiconductor device physics. The material presented in the text is based upon the lecture notes of a one-year graduate course sequence taught by this author for many years in the ·Department of Electrical Engineering of the University of Florida. It is intended as an introductory textbook for graduate students in electrical engineering. However, many students from other disciplines and backgrounds such as chemical engineering, materials science, and physics have also taken this course sequence, and will be interested in the material presented herein. This book may also serve as a general reference for device engineers in the semiconductor industry. The present volume covers a wide variety of topics on basic solid state physics and physical principles of various semiconductor devices. The main subjects covered include crystal structures, lattice dynamics, semiconductor statistics, energy band theory, excess carrier phenomena and recombination mechanisms, carrier transport and scattering mechanisms, optical properties, photoelectric effects, metal-semiconductor devices, the p--n junction diode, bipolar junction transistor, MOS devices, photonic devices, quantum effect devices, and high speed III-V semiconductor devices. The text presents a unified and balanced treatment of the physics of semiconductor materials and devices. It is intended to provide physicists and mat erials scientists with more device backgrounds, and device engineers with a broader knowledge of fundamental solid state physics.
Download or read book Advanced Indium Arsenide Based HEMT Architectures for Terahertz Applications written by N. Mohankumar and published by CRC Press. This book was released on 2021-09-28 with total page 114 pages. Available in PDF, EPUB and Kindle. Book excerpt: High electron mobility transistor (HEMT) has better performance potential than the conventional MOSFETs. Further, InAs is a perfect candidate for the HEMT device architecture owing to its peak electron mobility. Advanced Indium Arsenide-based HEMT Architectures for Terahertz Applications characterizes the HEMT based on InAs III-V material to achieve outstanding current and frequency performance. This book explains different types of device architectures available to enhance performance including InAs-based single gate (SG) HEMT and double gate (DG) HEMT. The noise analysis of InAs-based SG and DG-HEMT is also discussed. The main goal of this book is to characterize the InAs device to achieve terahertz frequency regime with proper device parameters. Features: Explains the influence of InAs material in the performance of HEMTs and MOS-HEMTs. Covers novel indium arsenide architectures for achieving terahertz frequencies Discusses impact of device parameters on frequency response Illustrates noise characterization of optimized indium arsenide HEMTs Introduces terahertz electronics including sources for terahertz applications. This book is of special interest to researchers and graduate students in Electronics Engineering, High Electron Mobility Transistors, Semi-conductors, Communications, and Nanodevices.
Download or read book Gallium Arsenide and Related Compounds 1993 Proceedings of the 20th INT Symposium 29 August 2 September 1993 Freiburg im Braunschweig Germany written by Günter Weimann and published by CRC Press. This book was released on 1994-01-01 with total page 880 pages. Available in PDF, EPUB and Kindle. Book excerpt: Gallium Arsenide and Related Compounds 1993 covers III-V compounds from crystal growth of materials to their device applications. Focusing on the fields of optical communications and satellite broadcasting, the book describes the practical applications for GaAs and III-V compounds in devices and circuits, both conventional and those based on quantum effects. It also discusses ultrafast GaAs transistors and integrated circuits, novel laser diodes, and tunneling devices, and considers the direction for future technologies. In addition, this volume addresses the increasing demands of ultra high speed systems that require careful selection of III-V materials to optimize the performance of electronic and optoelectronic components. It is ideal reading for physicists, materials scientists, electrical, and electronics engineers investigating III-V compound materials, properties, and devices.
Download or read book 75th Anniversary of the Transistor written by Arokia Nathan and published by John Wiley & Sons. This book was released on 2023-08-01 with total page 469 pages. Available in PDF, EPUB and Kindle. Book excerpt: 75th Anniversary of the Transistor 75th anniversary commemorative volume reflecting the transistor's development since inception to current state of the art 75th Anniversary of the Transistor is a commemorative anniversary volume to celebrate the invention of the transistor. The anniversary volume was conceived by the IEEE Electron Devices Society (EDS) to provide comprehensive yet compact coverage of the historical perspectives underlying the invention of the transistor and its subsequent evolution into a multitude of integration and manufacturing technologies and applications. The book reflects the transistor's development since inception to the current state of the art that continues to enable scaling to very large-scale integrated circuits of higher functionality and speed. The stages in this evolution covered are in chronological order to reflect historical developments. Narratives and experiences are provided by a select number of venerated industry and academic leaders, and retired veterans, of the semiconductor industry. 75th Anniversary of the Transistor highlights: Historical perspectives of the state-of-the-art pre-solid-state-transistor world (pre-1947) leading to the invention of the transistor Invention of the bipolar junction transistor (BJT) and analytical formulations by Shockley (1948) and their impact on the semiconductor industry Large scale integration, Moore's Law (1965) and transistor scaling (1974), and MOS/LSI, including flash memories — SRAMs, DRAMs (1963), and the Toshiba NAND flash memory (1989) Image sensors (1986), including charge-coupled devices, and related microsensor applications With comprehensive yet succinct and accessible coverage of one of the cornerstones of modern technology, 75th Anniversary of the Transistor is an essential reference for engineers, researchers, and undergraduate students looking for historical perspective from leaders in the field.
Download or read book High Speed Compound Semiconductor Devices for Wireless Applications and State of the Art Program on Compound Semiconductors XXXIII written by A. G. Baca and published by The Electrochemical Society. This book was released on 2000 with total page 230 pages. Available in PDF, EPUB and Kindle. Book excerpt: The proceedings were published before the two symposia actually took place, and some of the papers presented were not received in time. The 21 that did make it discuss compound semiconductors from perspectives of recent developments in materials, growth, characterization, processing, device fabrication, and reliability. Among the specific topics are the non-crystallographic wet etching of gallium arsenide, fabricating an integrated optics One to Two optical switch, and the fabrication and materials characterization of pulsed laser deposited nickel silicide ohmic contacts to 4H n-SiC. Annotation copyrighted by Book News, Inc., Portland, OR
Download or read book State of the Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors Photonics and Electronics V written by H. M. Ng and published by The Electrochemical Society. This book was released on 2004 with total page 616 pages. Available in PDF, EPUB and Kindle. Book excerpt:
