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Book Pseudomorphic and Strain relaxed InGaAs Channel Modulation doped Field effect Transistors on GaAs and InP Substrates

Download or read book Pseudomorphic and Strain relaxed InGaAs Channel Modulation doped Field effect Transistors on GaAs and InP Substrates written by David J. Cheskis and published by . This book was released on 1995 with total page 302 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book InGaAs Field effect Transistors

Download or read book InGaAs Field effect Transistors written by Klaus Heime and published by Wiley-Blackwell. This book was released on 1989 with total page 240 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Molecular beam Epitaxial Growth and Characterization of Pseudomorphic Double Modulation doped Field Effect Transistor Structures on Gallium Arsenide

Download or read book Molecular beam Epitaxial Growth and Characterization of Pseudomorphic Double Modulation doped Field Effect Transistor Structures on Gallium Arsenide written by Pierre Mandeville and published by Ann Arbor, Mich. : University Microfilms International. This book was released on 1993 with total page 372 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Characterization of Modulation doped Field effect Transistors with Gate Lengths Down to 600 Angstroms

Download or read book Characterization of Modulation doped Field effect Transistors with Gate Lengths Down to 600 Angstroms written by Paul Raymond De la Houssaye and published by . This book was released on 1988 with total page 310 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Modulation doped Field effect Transistors

Download or read book Modulation doped Field effect Transistors written by Heinrich Daembkes and published by Institute of Electrical & Electronics Engineers(IEEE). This book was released on 1991 with total page 544 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Modulation doped Field effect Transistors

Download or read book Modulation doped Field effect Transistors written by Heinrich Daembkes and published by Institute of Electrical & Electronics Engineers(IEEE). This book was released on 1991 with total page 484 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Modulation Doped Field Effect Transistors for Microwave Device Applications

Download or read book Modulation Doped Field Effect Transistors for Microwave Device Applications written by Norman C. Tien and published by . This book was released on 1993 with total page 282 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Investigation of 8 doped P channel GaAs and GaAs InGaAs Field effect Transistors

Download or read book Investigation of 8 doped P channel GaAs and GaAs InGaAs Field effect Transistors written by 王建勛 and published by . This book was released on 1995 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book High Frequency Doped Channel InGaP InGaAs InP Heterojunction Field Effect Transistor

Download or read book High Frequency Doped Channel InGaP InGaAs InP Heterojunction Field Effect Transistor written by Zhuang Tang and published by . This book was released on 1998 with total page 106 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Modulation Doped Field Effect Transistors in Strained Layer Superlattices

Download or read book Modulation Doped Field Effect Transistors in Strained Layer Superlattices written by S. M. Bedair and published by . This book was released on 1986 with total page 33 pages. Available in PDF, EPUB and Kindle. Book excerpt: In the mm-wave device investigation the limitations imposed by parasitic elements upon high-frequency performance were investigated. It was determined that the high field domain that forms in the channel of field-effect type transistors presents a limitation to high frequency operation. The domain capacitance creates a complex pole in the unilateral gain that results in a 12 db/octave roll-off above the resonant frequency of the pole. The various factors that effect this pole have been investigated. Current FETs are limited to upper operation frequencies of about 150-160 GHz. The GaAs(1-y)P(y)-Ga(1-yInx)As material system is proposed for potential HEMT applications. This structure is made of strained layers that can be grown with y = 2x free from dislocations, and lattice matched to a GaAs substrate. HEMT devices fabricated in such structure have several potential advantages over the conventional AlGaAs-GaAs HEMT. First, the active layer is Ga(1-x)In(x)As instead of GaAs. Thus, the potential exists for higher room temperature mobilities with larger saturation velocities and a larger conduction band edge discontinuity. An advantage over the Ga(0.47)In(0.53)As-InP system is that the composition of the Ga(1-x)In(x)As in the proposed structure can be varied to optimize the HEMT performance, whereas the Ga(0.47)In(0.53)As has a fairly low bandgap for optimum FET devices.

Book Fabrication of AlGaAs InGaAs Pseudomorphic Modulation Doped Field Effect Transistors with P Doped Surface Layers

Download or read book Fabrication of AlGaAs InGaAs Pseudomorphic Modulation Doped Field Effect Transistors with P Doped Surface Layers written by Thomas E. McLaughlin and published by . This book was released on 1986 with total page 145 pages. Available in PDF, EPUB and Kindle. Book excerpt: In this thesis modulation doped field-effect transistors (MODFETs) were fabricated. Two recently developed improvements to the MODFET structure were incorporated to produce an electronic device that had never before been fabricated. Highly p-doped surface layers were incorporated under the gate contact of the device. These layers have been shown to increase the Schottky barrier height at the MODFETs. Pseudomorphic AlGaAs/InGaAs technology was also incorporated for its proven unsurpassed electron saturation velocity and resulting high speed of operation. To evaluate the response of these ES pseudomorphic devices, their characteristics were measured and compared directly with those of reference samples fabricated at the reference transistors were etched off chemically just before deposition of gate contact metal. The peak transconductance, threshold voltage, contact resistance and barrier height of all devices were measured at direct current (DC). Also, microwave S-parameters were measured over the range of 2 to 12 gigahertz (GHz).