Download or read book Properties of Ru based Thin Films Grown by Chemical Vapor Deposition CVD and Atomic Layer Deposition ALD Methods for Future Complementary Metal Oxide Semiconductor CMOS Gate Electrode Applications written by Filippos Papadatos and published by . This book was released on 2006 with total page 184 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Atomic Layer Deposition for Semiconductors written by Cheol Seong Hwang and published by Springer Science & Business Media. This book was released on 2013-10-18 with total page 266 pages. Available in PDF, EPUB and Kindle. Book excerpt: Offering thorough coverage of atomic layer deposition (ALD), this book moves from basic chemistry of ALD and modeling of processes to examine ALD in memory, logic devices and machines. Reviews history, operating principles and ALD processes for each device.
Download or read book Dissertation Abstracts International written by and published by . This book was released on 2007 with total page 902 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Atomic Layer Deposition Applications 6 written by J. W. Elam and published by The Electrochemical Society. This book was released on 2010-10 with total page 469 pages. Available in PDF, EPUB and Kindle. Book excerpt: The continuously expanding realm of Atomic Layer Deposition (ALD) Applications is the focus of this reoccurring symposium. ALD can enable the precise deposition of ultra-thin, highly conformal coatings over complex 3D topographies with controlled thickness and composition. This issue of ECS Transactions contains peer reviewed papers presented at the symposium. A broad spectrum of ALD applications is featured, including novel nano-composites and nanostructures, dielectrics for state-of-the-art transistors and capacitors, optoelectronics, and a variety of other emerging applications.
Download or read book Growth and Characterization of Ru Films Deposited by Chemical Vapor Deposition written by Kelly Marriott Thom and published by . This book was released on 2009 with total page 282 pages. Available in PDF, EPUB and Kindle. Book excerpt: As device dimensions in integrated circuits scale down, there is an increasing need to deposit ultra-thin, smooth, continuous films for use in applications such as the liner in back end processing. The liner must have good adhesion to both Cu and the dielectric, act as a Cu diffusion barrier, and be conductive enough to allow the electroplating of Cu. Ruthenium (Ru) has been considered as a possible material to be implemented into the liner due to its low electrical resistivity, high thermal and chemical stability, and negligible solubility with copper. Chemical vapor deposition (CVD) is an attractive growth technique for Ru films because it allows conformal deposition in high-aspect ratio features. However, there are some limitations that must be overcome in the deposition of Ru films. CVD Ru films suffer from poor nucleation on oxide and nitride substrates. Poor nucleation leads to rough, large-grained polycrystalline columnar films, which may not coalesce into a continuous film until the thickness greatly exceeds the requirements for the liner. This dissertation presents surface chemistry and film growth studies involving Ru CVD and focuses on improving the nucleation and properties of Ru films. In situ surface analysis techniques including X-ray photoelectron spectroscopy (XPS) and temperature programmed desorption (TPD) were used to study the fundamental adsorption behavior of the Ru precursor, (2,4- dimethylpentadienyl)(ethylcyclopentadienyl)Ru or DER, on polycrystalline Ta, both with and without iodine adsorbed on the Ta. Based upon these results, CVD films were grown using DER/O2, and it was shown that nucleation and film properties can be improved by the addition of methyl iodide. Ru films grown using DER/O2 show sparse nucleation, which leads to very rough surface topography and large polycrystalline columnar grains. The addition of methyl iodide during growth significantly improves nucleation and results in smoother, smaller-grained films. Iodine adsorbs on the initially-formed Ru islands and continuously segregates through the film to the surface during the entire deposition. In addition, CVD films grown with Ru3(CO)12 were studied. Use of the Ru3(CO)12 precursor results in thin, ultra-smooth films that show little to no columnar grain structure.
Download or read book Atomic Layer Deposition written by Tommi Kääriäinen and published by John Wiley & Sons. This book was released on 2013-05-28 with total page 274 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since the first edition was published in 2008, Atomic Layer Deposition (ALD) has emerged as a powerful, and sometimes preferred, deposition technology. The new edition of this groundbreaking monograph is the first text to review the subject of ALD comprehensively from a practical perspective. It covers ALD's application to microelectronics (MEMS) and nanotechnology; many important new and emerging applications; thermal processes for ALD growth of nanometer thick films of semiconductors, oxides, metals and nitrides; and the formation of organic and hybrid materials.
Download or read book Oxide Electronics written by Asim K. Ray and published by John Wiley & Sons. This book was released on 2021-04-12 with total page 628 pages. Available in PDF, EPUB and Kindle. Book excerpt: Oxide Electronics Multiple disciplines converge in this insightful exploration of complex metal oxides and their functions and properties Oxide Electronics delivers a broad and comprehensive exploration of complex metal oxides designed to meet the multidisciplinary needs of electrical and electronic engineers, physicists, and material scientists. The distinguished author eschews complex mathematics whenever possible and focuses on the physical and functional properties of metal oxides in each chapter. Each of the sixteen chapters featured within the book begins with an abstract and an introduction to the topic, clear explanations are presented with graphical illustrations and relevant equations throughout the book. Numerous supporting references are included, and each chapter is self-contained, making them perfect for use both as a reference and as study material. Readers will learn how and why the field of oxide electronics is a key area of research and exploitation in materials science, electrical engineering, and semiconductor physics. The book encompasses every application area where the functional and electronic properties of various genres of oxides are exploited. Readers will also learn from topics like: Thorough discussions of High-k gate oxide for silicon heterostructure MOSFET devices and semiconductor-dielectric interfaces An exploration of printable high-mobility transparent amorphous oxide semiconductors Treatments of graphene oxide electronics, magnetic oxides, ferroelectric oxides, and materials for spin electronics Examinations of the calcium aluminate binary compound, perovoksites for photovoltaics, and oxide 2Degs Analyses of various applications for oxide electronics, including data storage, microprocessors, biomedical devices, LCDs, photovoltaic cells, TFTs, and sensors Suitable for researchers in semiconductor technology or working in materials science, electrical engineering, and physics, Oxide Electronics will also earn a place in the libraries of private industry researchers like device engineers working on electronic applications of oxide electronics. Engineers working on photovoltaics, sensors, or consumer electronics will also benefit from this book.
Download or read book Thin Films by Chemical Vapour Deposition written by C. E. Moroșanu and published by . This book was released on 1990 with total page 724 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Low Temperature Chemical Vapor Deposition of Ruthenium and Manganese Nitride Thin Films written by Teresa S. Lazarz and published by . This book was released on 2009 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Materials and thin film processing development has been and remains key to continuing to make ever smaller, or miniaturized, microelectronic devices. In order to continue miniaturization, conformal, low-temperature deposition of new electronic materials is needed. Two techniques capable of conformality have emerged: chemical vapor deposition (CVD) and atomic layer deposition (ALD). Here, two processes for deposition of materials which could be useful in microelectronics, but for which no low-temperature, conformal process has been established as commercializable, are presented. One is ruthenium, intended for use in interconnects and in dynamic random access memory electrodes, a known material for use in microelectronics but for which a more conformal, yet fast process than previously demonstrated is required. The other is manganese nitride, which could be used as active magnetic layers in devices or as a dopant in materials for spintronics, which is not yet established as a desired material in part due to the lack of any previously known CVD or ALD process for deposition.
Download or read book Thin Films Atomic Layer Deposition and 3D Printing written by Kingsley Ukoba and published by CRC Press. This book was released on 2023-11-29 with total page 287 pages. Available in PDF, EPUB and Kindle. Book excerpt: Thin Films, Atomic Layer Deposition, and 3D Printing explains the concept of thin films, atomic layers deposition, and the Fourth Industrial Revolution (4IR) with an aim to illustrate existing resources and give a broader perspective of the involved processes as well as provide a selection of different types of 3D printing, materials used for 3D printing, emerging trends and applications, and current top-performing 3D printers using different technologies. It covers the concept of the 4IR and its role in current and future human endeavors for both experts/nonexperts. The book includes figures, diagrams, and their applications in real-life situations. Features: Provides comprehensive material on conventional and emerging thin film, atomic layer, and additive technologies. Discusses the concept of Industry 4.0 in thin films technology. Details the preparation and properties of hybrid and scalable (ultra) thin materials for advanced applications. Explores detailed bibliometric analyses on pertinent applications. Interconnects atomic layer deposition and additive manufacturing. This book is aimed at researchers and graduate students in mechanical, materials, and metallurgical engineering.
Download or read book Metallorganic Chemical Vapor Deposition and Atomic Layer Deposition Approaches for the Growth of HF based Thin Films from Dialkylamide Precursors for Advanced CMOs Gate Stack Applications written by Steven P. Consiglio and published by . This book was released on 2007 with total page 155 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Deposition and Properties of Co and Ru based Ultra thin Films written by Lucas Benjamin Henderson and published by . This book was released on 2009 with total page 284 pages. Available in PDF, EPUB and Kindle. Book excerpt: Future copper interconnect systems will require replacement of the materials that currently comprise both the liner layer(s) and the capping layer. Ruthenium has previously been considered as a material that could function as a single material liner, however its poor ability to prevent copper diffusion makes it incompatible with liner requirements. A recently described chemical vapor deposition route to amorphous ruthenium-phosphorus alloy films could correct this problem by eliminating the grain boundaries found in pure ruthenium films. Bias-temperature stressing of capacitor structures using 5 nm ruthenium-phosphorus film as a barrier to copper diffusion and analysis of the times-to-failure at accelerated temperature and field conditions implies that ruthenium-phosphorus performs acceptably as a diffusion barrier for temperatures above 165 °C. The future problems associated with the copper capping layer are primarily due to the poor adhesion between copper and the current Si-based capping layers. Cobalt, which adheres well to copper, has been widely proposed to replace the Si-based materials, but its ability to prevent copper diffusion must be improved if it is to be successfully implemented in the interconnect. Using a dual-source chemistry of dicobaltoctacarbonyl and trimethylphosphine at temperatures from 250-350 °C, amorphous cobalt-phosphorus can be deposited by chemical vapor deposition. The films contain elemental cobalt and phosphorus, plus some carbon impurity, which is incorporated in the film as both graphitic and carbidic (bonded to cobalt) carbon. When deposited on copper, the adhesion between the two materials remains strong despite the presence of phosphorus and carbon at the interface, but the selectivity for growth on copper compared to silicon dioxide is poor and must be improved prior to consideration for application in interconnect systems. A single molecule precursor containing both cobalt and phosphorus atoms, tetrakis(trimethylphosphine)cobalt(0), yields cobalt-phosphorus films without any co-reactant. However, the molecule does not contain sufficient amounts of amorphizing agents to fully eliminate grain boundaries, and the resulting film is nanocrystalline.
Download or read book Materials Chemistry written by Bradley D. Fahlman and published by Springer. This book was released on 2018-08-28 with total page 817 pages. Available in PDF, EPUB and Kindle. Book excerpt: The 3rd edition of this successful textbook continues to build on the strengths that were recognized by a 2008 Textbook Excellence Award from the Text and Academic Authors Association (TAA). Materials Chemistry addresses inorganic-, organic-, and nano-based materials from a structure vs. property treatment, providing a suitable breadth and depth coverage of the rapidly evolving materials field — in a concise format. The 3rd edition offers significant updates throughout, with expanded sections on sustainability, energy storage, metal-organic frameworks, solid electrolytes, solvothermal/microwave syntheses, integrated circuits, and nanotoxicity. Most appropriate for Junior/Senior undergraduate students, as well as first-year graduate students in chemistry, physics, or engineering fields, Materials Chemistry may also serve as a valuable reference to industrial researchers. Each chapter concludes with a section that describes important materials applications, and an updated list of thought-provoking questions.
Download or read book 2D Materials written by Phaedon Avouris and published by Cambridge University Press. This book was released on 2017-06-29 with total page 521 pages. Available in PDF, EPUB and Kindle. Book excerpt: Learn about the most recent advances in 2D materials with this comprehensive and accessible text. Providing all the necessary materials science and physics background, leading experts discuss the fundamental properties of a wide range of 2D materials, and their potential applications in electronic, optoelectronic and photonic devices. Several important classes of materials are covered, from more established ones such as graphene, hexagonal boron nitride, and transition metal dichalcogenides, to new and emerging materials such as black phosphorus, silicene, and germanene. Readers will gain an in-depth understanding of the electronic structure and optical, thermal, mechanical, vibrational, spin and plasmonic properties of each material, as well as the different techniques that can be used for their synthesis. Presenting a unified perspective on 2D materials, this is an excellent resource for graduate students, researchers and practitioners working in nanotechnology, nanoelectronics, nanophotonics, condensed matter physics, and chemistry.
Download or read book The Physics of Semiconductor Devices written by R. K. Sharma and published by Springer. This book was released on 2019-01-31 with total page 1260 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book disseminates the current knowledge of semiconductor physics and its applications across the scientific community. It is based on a biennial workshop that provides the participating research groups with a stimulating platform for interaction and collaboration with colleagues from the same scientific community. The book discusses the latest developments in the field of III-nitrides; materials & devices, compound semiconductors, VLSI technology, optoelectronics, sensors, photovoltaics, crystal growth, epitaxy and characterization, graphene and other 2D materials and organic semiconductors.
Download or read book Ferroelectrics written by Mickaël Lallart and published by BoD – Books on Demand. This book was released on 2011-08-23 with total page 266 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ferroelectric materials have been and still are widely used in many applications, that have moved from sonar towards breakthrough technologies such as memories or optical devices. This book is a part of a four volume collection (covering material aspects, physical effects, characterization and modeling, and applications) and focuses on the application of ferroelectric devices to innovative systems. In particular, the use of these materials as varying capacitors, gyroscope, acoustics sensors and actuators, microgenerators and memory devices will be exposed, providing an up-to-date review of recent scientific findings and recent advances in the field of ferroelectric devices.
Download or read book Thin Film Metal Oxides written by Shriram Ramanathan and published by Springer Science & Business Media. This book was released on 2009-12-03 with total page 344 pages. Available in PDF, EPUB and Kindle. Book excerpt: Thin Film Metal-Oxides provides a representative account of the fundamental structure-property relations in oxide thin films. Functional properties of thin film oxides are discussed in the context of applications in emerging electronics and renewable energy technologies. Readers will find a detailed description of deposition and characterization of metal oxide thin films, theoretical treatment of select properties and their functional performance in solid state devices, from leading researchers. Scientists and engineers involved with oxide semiconductors, electronic materials and alternative energy will find Thin Film Metal-Oxides a useful reference.
