Download or read book Production and Characterization of Nanostructured Silicon Carbide written by and published by . This book was released on 2004 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Nanostructured materials continue to attract attention because of their new and interesting properties, which are very different from their macrostructured equivalents. Since the size of grain and surface differs, a better understanding of the microstructure, the mechanism of formation, and methods of controlling surface properties is necessary. In this study, nanostructured silicon carbide has been produced from the solid-solid reaction of a mixture of silicon nanopowder and carbon multiwalled nanotubes (MWNT) sintered by induction. A study of the reaction rate at different temperatures has yielded a value for the activation energy of 254 " 36 kJ/mol, and has led to the conclusion that the reaction is diffusion-controlled. A second method produced pure silicon carbide nanowires using a procedure which kept the solid reactants, silicon powder and MWNT, separated while sintering at a constant temperature of 1200̆%. Silicon in the vapor-phase reacted at the surface of the MWNTs followed by diffusion of both precursors through the product phase boundary. The reaction time was varied, and a morphological study has been done describing changes in shape and size as a function of time. The initial reaction produced a layer of SiC providing the outer shell of coaxial structures with carbon nanotubes inside. As Si and C diffused through the product phase to react at the interface, the tube became filled with SiC to form solid SiC nanowires, and the outer diameter of the nanowires grew continuously as reaction time increased. After long sintering times, growth continued in two dimensions, fusing nanowires together into planar structures. In addition, the precursor form of carbon was varied, and nanowires produced by two different types of nanotubes have been studied. The produced SiC nanowires show cubic crystal structure. After a few hours of sintering, stacking faults began to occur inside the wires, and the frequency of occurrence of the stacking faults increased as reacti.

Download or read book Synthesis and Characterization of beta silicon Carbide Nanostructures written by Enagnon Thymour Legba and published by . This book was released on 2007 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Silicon Carbide Nanostructures written by Jiyang Fan and published by Springer. This book was released on 2014-07-26 with total page 336 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book brings together the most up-to-date information on the fabrication techniques, properties, and potential applications of low dimensional silicon carbide (SiC) nanostructures such as nanocrystallites, nanowires, nanotubes, and nanostructured films. It also summarizes the tremendous achievements acquired during the past three decades involving structural, electronic, and optical properties of bulk silicon carbide crystals. SiC nanostructures exhibit a range of fascinating and industrially important properties, such as diverse polytypes, stability of interband and defect-related green to blue luminescence, inertness to chemical surroundings, and good biocompatibility. These properties have generated an increasing interest in the materials, which have great potential in a variety of applications across the fields of nanoelectronics, optoelectronics, electron field emission, sensing, quantum information, energy conversion and storage, biomedical engineering, and medicine. SiC is also a most promising substitute for silicon in high power, high temperature, and high frequency microelectronic devices. Recent breakthrough pertaining to the synthesis of ultra-high quality SiC single-crystals will bring the materials closer to real applications. Silicon Carbide Nanostructures: Fabrication, Structure, and Properties provides a unique reference book for researchers and graduate students in this emerging field. It is intended for materials scientists, physicists, chemists, and engineers in microelectronics, optoelectronics, and biomedical engineering.

Download or read book Synthesis and Characterization of Silicon Oxide and Silicon Carbide Nanostructures written by Majid Salim Mohammed Al-Ruqieshi and published by . This book was released on 2010 with total page 420 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Silicon Carbide One dimensional Nanostructures written by Laurence Latu-Romain and published by John Wiley & Sons. This book was released on 2015-02-23 with total page 150 pages. Available in PDF, EPUB and Kindle. Book excerpt: Dedicated to SiC-based 1D nanostructures, this book explains the properties and different growth methods of these nanostructures. It details carburization of silicon nanowires, a growth process for obtaining original Si-SiC core-shell nanowires and SiC nanotubes of high crystalline quality, thanks to the control of the siliconout-diffusion. The potential applications of these particular nano-objects is also discussed, with regards to their eventual integration in biology, energy and electronics.

Download or read book Bulk and Nano scale Characterization of Polymer Derived Silicon Carbide and Comparison with Sintered Silicon Carbide written by Arif Rahman and published by . This book was released on 2009 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Silicon Carbide Nanostructures written by Ji-Yang Fan and published by . This book was released on 2014-08-31 with total page 342 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Advancing Silicon Carbide Electronics Technology II written by Konstantinos Zekentes and published by Materials Research Forum LLC. This book was released on 2020-03-15 with total page 292 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book presents an in-depth review and analysis of Silicon Carbide device processing. The main topics are: (1) Silicon Carbide Discovery, Properties and Technology, (2) Processing and Application of Dielectrics in Silicon Carbide Devices, (3) Doping by Ion Implantation, (4) Plasma Etching and (5) Fabrication of Silicon Carbide Nanostructures and Related Devices. The book is also suited as supplementary textbook for graduate courses. Keywords: Silicon Carbide, SiC, Technology, Processing, Semiconductor Devices, Material Properties, Polytypism, Thermal Oxidation, Post Oxidation Annealing, Surface Passivation, Dielectric Deposition, Field Effect Mobility, Ion Implantation, Post Implantation Annealing, Channeling, Surface Roughness, Dry Etching, Plasma Etching, Ion Etching, Sputtering, Chemical Etching, Plasma Chemistry, Micromasking, Microtrenching, Nanocrystal, Nanowire, Nanotube, Nanopillar, Nanoelectromechanical Systems (NEMS).

Download or read book Advanced Processing and Manufacturing Technologies for Nanostructured and Multifunctional Materials II Volume 36 Issue 6 written by Tatsuki Ohji and published by John Wiley & Sons. This book was released on 2016-01-05 with total page 184 pages. Available in PDF, EPUB and Kindle. Book excerpt: The Ceramic Engineering and Science Proceeding has been published by The American Ceramic Society since 1980. This series contains a collection of papers dealing with issues in both traditional ceramics (i.e., glass, whitewares, refractories, and porcelain enamel) and advanced ceramics. Topics covered in the area of advanced ceramic include bioceramics, nanomaterials, composites, solid oxide fuel cells, mechanical properties and structural design, advanced ceramic coatings, ceramic armor, porous ceramics, and more.

Download or read book Silicon Carbide and Advanced Materials written by Juraj Marek and published by Trans Tech Publications Ltd. This book was released on 2023-05-26 with total page 178 pages. Available in PDF, EPUB and Kindle. Book excerpt: Special topic volume with invited peer-reviewed papers only

Download or read book Physics and Technology of Silicon Carbide Devices written by Yasuto Hijikata and published by BoD – Books on Demand. This book was released on 2012-10-16 with total page 416 pages. Available in PDF, EPUB and Kindle. Book excerpt: Recently, some SiC power devices such as Schottky-barrier diodes (SBDs), metal-oxide-semiconductor field-effect-transistors (MOSFETs), junction FETs (JFETs), and their integrated modules have come onto the market. However, to stably supply them and reduce their cost, further improvements for material characterizations and those for device processing are still necessary. This book abundantly describes recent technologies on manufacturing, processing, characterization, modeling, and so on for SiC devices. In particular, for explanation of technologies, I was always careful to argue physics underlying the technologies as much as possible. If this book could be a little helpful to progress of SiC devices, it will be my unexpected happiness.

Download or read book Advanced Processing and Manufacturing Technologies for Nanostructured and Multifunctional Materials Volume 35 Issue 6 written by Tatsuki Ohji and published by John Wiley & Sons. This book was released on 2015-01-29 with total page 236 pages. Available in PDF, EPUB and Kindle. Book excerpt: Over 170 contributions (invited talks, oral presentations, and posters) were presented by participants from universities, research institutions, and industry, which offered interdisciplinary discussions indicating strong scientific and technological interest in the field of nanostructured systems. This issue contains 23 peer-reviewed papers that cover various aspects and the latest developments related to nanoscaled materials and functional ceramics.

Download or read book Nanostructured Thin Films and Coatings written by Sam Zhang and published by CRC Press. This book was released on 2010-06-18 with total page 415 pages. Available in PDF, EPUB and Kindle. Book excerpt: Authored by leading experts from around the world, the three-volume Handbook of Nanostructured Thin Films and Coatings gives scientific researchers and product engineers a resource as dynamic and flexible as the field itself. The first two volumes cover the latest research and application of the mechanical and functional properties of thin films an

Download or read book Production and Characterization of Silicon Nanostructures for the Advancement of Novel Energetic Formulations written by and published by . This book was released on 2008 with total page 7 pages. Available in PDF, EPUB and Kindle. Book excerpt: This paper details the synthesis and characterization of Silicon (Si) nanostructured powder with a wide variety of morphologies such as nanoparticles, nanowires, nanotubes, etc., produced by DC plasma arc discharge route. These nanostructures were synthesized by controlling the synthesis parameters such as current, voltage, catalyst, gas pressure, etc. The structural, morphological and vibrational properties were investigated using X-ray diffraction, transmission electron microscopy, scanning electron microscopy, nitrogen adsorption-desorption isotherms and Raman Spectrometer. Both bright and dark field imaging were performed in order to study the morphological characteristics of the nanostructures. These images confirm the formation of high aspect ratio nanostructures of Si with diameters of up to 15 nm and lengths in the range of 500 - 1000 nm. Diffraction patterns were recorded to identify the number of phases formed and determine the crystal structure of the observed phases. The BET surface area of Si nanoparticles and high aspect ratio Si nanostructures (nanowires and nanotubes) are about 60 m2/g and 360 m2/g respectively. Raman spectrum of nanostructured Si showed both shift in the peak position and broadening of the Raman peak.

Download or read book Fundamentals of Silicon Carbide Technology written by Tsunenobu Kimoto and published by John Wiley & Sons. This book was released on 2014-11-24 with total page 565 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001. The SiC SBD market has grown significantly since that time, and SBDs are now used in a variety of power systems, particularly switch-mode power supplies and motor controls. SiC power MOSFETs entered commercial production in 2011, providing rugged, high-efficiency switches for high-frequency power systems. In this wide-ranging book, the authors draw on their considerable experience to present both an introduction to SiC materials, devices, and applications and an in-depth reference for scientists and engineers working in this fast-moving field. Fundamentals of Silicon Carbide Technology covers basic properties of SiC materials, processing technology, theory and analysis of practical devices, and an overview of the most important systems applications. Specifically included are: A complete discussion of SiC material properties, bulk crystal growth, epitaxial growth, device fabrication technology, and characterization techniques. Device physics and operating equations for Schottky diodes, pin diodes, JBS/MPS diodes, JFETs, MOSFETs, BJTs, IGBTs, and thyristors. A survey of power electronics applications, including switch-mode power supplies, motor drives, power converters for electric vehicles, and converters for renewable energy sources. Coverage of special applications, including microwave devices, high-temperature electronics, and rugged sensors. Fully illustrated throughout, the text is written by recognized experts with over 45 years of combined experience in SiC research and development. This book is intended for graduate students and researchers in crystal growth, material science, and semiconductor device technology. The book is also useful for design engineers, application engineers, and product managers in areas such as power supplies, converter and inverter design, electric vehicle technology, high-temperature electronics, sensors, and smart grid technology.

Download or read book Growth and Characterization of Silicon Carbide Thin Films and Nanowires written by Lunet Estefany Luna and published by . This book was released on 2016 with total page 109 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon carbide (SiC) based electronics and sensors hold promise for pushing past the limits of current technology to achieve small, durable devices that can function in high-temperature, high-voltage, corrosive, and biological environments. SiC is an ideal material for such conditions due to its high mechanical strength, excellent chemical stability, and its biocompatibility. Consequently, SiC thin films and nanowires have attracted interest in applications such as micro- and nano-electromechanical systems, biological sensors, field emission cathodes, and energy storage devices. In terms of high-temperature microdevices, maintaining low-resistance electrical contact between metal and SiC remains a challenge. Although SiC itself maintains structural and electrical stability at high temperatures, the metallization schemes on SiC can suffer from silicide formation and oxidation when exposed to air. The second chapter presents efforts to develop stable metallization schemes to SiC. A stack consisting of Ni-induced solid-state graphitization of SiC and an atomic layer deposited layer of alumina is shown to yield low contact resistivity of Pt/Ti to polycrystalline n-type 3C-SiC films that is stable in air at 450 oC for 500 hours. The subsequent chapters focus on the growth and structural characterization of SiC nanowires. In addition to its structural stability in harsh-environments, there is interest in controlling SiC crystal structure or polytype formation. Over 200 different polytypes have been reported for SiC, with the most common being 3C, 4H, and 2H. In terms of SiC nanowire growth, the 3C or cubic phase is the most prevalent. However, as the stacking fault energy for SiC is on the order of a few meV, it is common to have a high density of stacking faults within a given SiC crystal structure. Thus, to enable reliable performance of SiC nanowires, a growth method that can promote a specific polytype or reduce stacking faults is of importance. Ni-catalyzed chemical vapor deposition method is employed for the growth of the nanowires. The effects of substrate structure and quality as well as the various growth parameters such as temperature, pressure, and post-deposition annealing are investigated. Most significant has been the growth and characterization of vertically aligned hexagonal phase (or 4H-like) SiC nanowires grown on commercially available 4H-SiC (0001). The studies presented in this thesis tackle issues in SiC metallization and nanowire growth in efforts to expand the versatility of SiC as a material platform for novel devices.

Download or read book Dissertation Abstracts International written by and published by . This book was released on 2008 with total page 868 pages. Available in PDF, EPUB and Kindle. Book excerpt: