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Book Processing Issues of Germanium MOS Devices on Silicon Substrates

Download or read book Processing Issues of Germanium MOS Devices on Silicon Substrates written by Sachin Vineet Joshi and published by . This book was released on 2004 with total page 90 pages. Available in PDF, EPUB and Kindle. Book excerpt: As conventional scaling approaches its limits, novel materials are increasingly being explored for continuing the exponential growth predicted by Moore's law. Germanium and high K gate dielectrics are currently the subject of extensive study. This work is an initial report about the challenges and opportunities in the integration of compressively strained Germanium films and high k gate dielectrics onto conventional silicon substrates for faster MOS devices. A novel MOS device structure with a thin, meta-stable Ge film in the channel region and a high k gate dielectric material is explored for its thermodynamic instability.

Book Rapid Melt Growth of Silicon Germanium for Heterogeneous Integration on Silicon

Download or read book Rapid Melt Growth of Silicon Germanium for Heterogeneous Integration on Silicon written by Hwei Yin Serene Koh and published by Stanford University. This book was released on 2011 with total page 238 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon has made modern integrated circuit technology possible. As MOSFET gate lengths are scaled to 22nm and beyond, it has become apparent that new materials must be introduced to the silicon-based CMOS process for improved performance and functionality. This dissertation begins with a review of the MOSFET leakage current problem and presents one potential solution: Band-to-Band Tunneling (BTBT) transistors, which have the potential for steeper subthreshold slopes because they do not have the fundamental 'kT/q' limit in the rate at which conventional MOSFETs can be turned on or off. It is clear that these devices must be fabricated in materials with smaller bandgaps for improved performance. Silicon Germanium (SiGe) is one possible material system that could be used to fabricate enhanced BTBT transistors. Rapid Melt Growth (RMG) is a technique that has been used to recrystallize materials on Si substrates. RMG, however, has not previously been applied to SiGe, a binary alloy with large separation in the liquidus-solidus curve in its phase diagram. The development of process and experimental results for obtaining SiGe-on-insulator (SGOI) from bulk Si substrates through RMG are presented. The theory of RMG is analyzed and compositional profiles obtained during RMG of SiGe are modeled to understand why we were able to obtain high quality lateral compositionally graded SGOI substrates. The success of RMG SiGe suggests that the RMG technique can also be applied to III-V ternary and quaternary compounds with similar pseudo-binary phase diagrams. This opens up a wide range of material possibilities with the potential for novel applications in heterogeneous integration and 3-D device technology.

Book Advanced Short time Thermal Processing for Si based CMOS Devices 2

Download or read book Advanced Short time Thermal Processing for Si based CMOS Devices 2 written by Mehmet C. Öztürk and published by The Electrochemical Society. This book was released on 2004 with total page 444 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book SiGe and Ge

Download or read book SiGe and Ge written by David Louis Harame and published by The Electrochemical Society. This book was released on 2006 with total page 1280 pages. Available in PDF, EPUB and Kindle. Book excerpt: The second International SiGe & Ge: Materials, Processing, and Devices Symposium was part of the 2006 ECS conference held in Cancun, Mexico from October 29-Nov 3, 2006. This meeting provided a forum for reviewing and discussing all materials and device related aspects of SiGe & Ge. The hardcover edition includes a bonus CD-ROM containing the PDF of the entire issue.

Book SiGe  Ge  and Related Compounds 4  Materials  Processing  and Devices

Download or read book SiGe Ge and Related Compounds 4 Materials Processing and Devices written by D. Harame and published by The Electrochemical Society. This book was released on 2010-10 with total page 1066 pages. Available in PDF, EPUB and Kindle. Book excerpt: Advanced semiconductor technology is depending on innovation and less on "classical" scaling. SiGe, Ge, and Related Compounds has become a key component in the arsenal in improving semiconductor performance. This symposium discusses the technology to form these materials, process them, FET devices incorporating them, Surfaces and Interfaces, Optoelectronic devices, and HBT devices.

Book Defects in Microelectronic Materials and Devices

Download or read book Defects in Microelectronic Materials and Devices written by Daniel M. Fleetwood and published by CRC Press. This book was released on 2008-11-19 with total page 772 pages. Available in PDF, EPUB and Kindle. Book excerpt: Uncover the Defects that Compromise Performance and ReliabilityAs microelectronics features and devices become smaller and more complex, it is critical that engineers and technologists completely understand how components can be damaged during the increasingly complicated fabrication processes required to produce them.A comprehensive survey of defe

Book SiGe  Ge  and Related Compounds 3  Materials  Processing  and Devices

Download or read book SiGe Ge and Related Compounds 3 Materials Processing and Devices written by David Harame and published by The Electrochemical Society. This book was released on 2008 with total page 1136 pages. Available in PDF, EPUB and Kindle. Book excerpt: Advanced semiconductor technology is depending on innovation and less on "classical" scaling. SiGe, Ge, and Related Compounds have become a key component of the arsenal in improving semiconductor performance. This issue of ECS Transactions discusses the technology to form these materials, process them, FET devices incorporating them, Surfaces and Interfaces, Optoelectronic devices, and HBT devices.

Book The Source Drain Engineering of Nanoscale Germanium based MOS Devices

Download or read book The Source Drain Engineering of Nanoscale Germanium based MOS Devices written by Zhiqiang Li and published by Springer. This book was released on 2016-03-24 with total page 71 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book mainly focuses on reducing the high parasitic resistance in the source/drain of germanium nMOSFET. With adopting of the Implantation After Germanide (IAG) technique, P and Sb co-implantation technique and Multiple Implantation and Multiple Annealing (MIMA) technique, the electron Schottky barrier height of NiGe/Ge contact is modulated to 0.1eV, the thermal stability of NiGe is improved to 600°C and the contact resistivity of metal/n-Ge contact is drastically reduced to 3.8×10−7Ω•cm2, respectively. Besides, a reduced source/drain parasitic resistance is demonstrated in the fabricated Ge nMOSFET. Readers will find useful information about the source/drain engineering technique for high-performance CMOS devices at future technology node.

Book Crucial Issues in Semiconductor Materials and Processing Technologies

Download or read book Crucial Issues in Semiconductor Materials and Processing Technologies written by S. Coffa and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 523 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductors lie at the heart of some of the most important industries and technologies of the twentieth century. The complexity of silicon integrated circuits is increasing considerably because of the continuous dimensional shrinkage to improve efficiency and functionality. This evolution in design rules poses real challenges for the materials scientists and processing engineers. Materials, defects and processing now have to be understood in their totality. World experts discuss, in this volume, the crucial issues facing lithography, ion implication and plasma processing, metallization and insulating layer quality, and crystal growth. Particular emphasis is placed upon silicon, but compound semiconductors and photonic materials are also highlighted. The fundamental concepts of phase stability, interfaces and defects play a key role in understanding these crucial issues. These concepts are reviewed in a crucial fashion.

Book SiGe  Ge  and Related Compounds  Materials  Processing  and Devices 8

Download or read book SiGe Ge and Related Compounds Materials Processing and Devices 8 written by Q. Liu and published by The Electrochemical Society. This book was released on 2018-09-21 with total page 450 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Advances in Chemical Mechanical Planarization  CMP

Download or read book Advances in Chemical Mechanical Planarization CMP written by Babu Suryadevara and published by Woodhead Publishing. This book was released on 2021-09-10 with total page 650 pages. Available in PDF, EPUB and Kindle. Book excerpt: Advances in Chemical Mechanical Planarization (CMP), Second Edition provides the latest information on a mainstream process that is critical for high-volume, high-yield semiconductor manufacturing, and even more so as device dimensions continue to shrink. The second edition includes the recent advances of CMP and its emerging materials, methods, and applications, including coverage of post-CMP cleaning challenges and tribology of CMP. This important book offers a systematic review of fundamentals and advances in the area. Part one covers CMP of dielectric and metal films, with chapters focusing on the use of current and emerging techniques and processes and on CMP of various materials, including ultra low-k materials and high-mobility channel materials, and ending with a chapter reviewing the environmental impacts of CMP processes. New content addressed includes CMP challenges with tungsten, cobalt, and ruthenium as interconnect and barrier films, consumables for ultralow topography and CMP for memory devices. Part two addresses consumables and process control for improved CMP and includes chapters on CMP pads, diamond disc pad conditioning, the use of FTIR spectroscopy for characterization of surface processes and approaches for defection characterization, mitigation, and reduction. Advances in Chemical Mechanical Planarization (CMP), Second Edition is an invaluable resource and key reference for materials scientists and engineers in academia and R&D. Reviews the most relevant techniques and processes for CMP of dielectric and metal films Includes chapters devoted to CMP for current and emerging materials Addresses consumables and process control for improved CMP, including post-CMP

Book Chemistry in Microelectronics

Download or read book Chemistry in Microelectronics written by Yannick Le Tiec and published by John Wiley & Sons. This book was released on 2013-02-28 with total page 261 pages. Available in PDF, EPUB and Kindle. Book excerpt: Microelectronics is a complex world where many sciences need to collaborate to create nano-objects: we need expertise in electronics, microelectronics, physics, optics and mechanics also crossing into chemistry, electrochemistry, as well as biology, biochemistry and medicine. Chemistry is involved in many fields from materials, chemicals, gases, liquids or salts, the basics of reactions and equilibrium, to the optimized cleaning of surfaces and selective etching of specific layers. In addition, over recent decades, the size of the transistors has been drastically reduced while the functionality of circuits has increased. This book consists of five chapters covering the chemicals and sequences used in processing, from cleaning to etching, the role and impact of their purity, along with the materials used in “Front End Of the Line” which corresponds to the heart and performance of individual transistors, then moving on to the “Back End Of the Line” which is related to the interconnection of all the transistors. Finally, the need for specific functionalization also requires key knowledge on surface treatments and chemical management to allow new applications. Contents 1. Chemistry in the “Front End of the Line” (FEOL): Deposits, Gate Stacks, Epitaxy and Contacts, François Martin, Jean-Michel Hartmann, Véronique Carron and Yannick Le Tiec. 2. Chemistry in Interconnects, Vincent Jousseaume, Paul-Henri Haumesser, Carole Pernel, Jeffery Butterbaugh, Sylvain Maîtrejean and Didier Louis. 3. The Chemistry of Wet Surface Preparation: Cleaning, Etching and Drying, Yannick Le Tiec and Martin Knotter. 4. The Use and Management of Chemical Fluids in Microelectronics, Christiane Gottschalk, Kevin Mclaughlin, Julie Cren, Catherine Peyne and Patrick Valenti. 5. Surface Functionalization for Micro- and Nanosystems: Application to Biosensors, Antoine Hoang, Gilles Marchand, Guillaume Nonglaton, Isabelle Texier-Nogues and Francoise Vinet. About the Authors Yannick Le Tiec is a technical expert at CEA-Leti, Minatec since 2002. He is a CEA-Leti assignee at IBM, Albany (NY) to develop the advanced 14 nm CMOS node and the FDSOI technology. He held different technical positions from the advanced 300 mm SOI CMOS pilot line to different assignments within SOITEC for advanced wafer development and later within INES to optimize solar cell ramp-up and yield. He has been part of the ITRS Front End technical working group at ITRS since 2008.

Book Computer Aided Design of Analog Integrated Circuits and Systems

Download or read book Computer Aided Design of Analog Integrated Circuits and Systems written by Rob A. Rutenbar and published by John Wiley & Sons. This book was released on 2002-05-06 with total page 773 pages. Available in PDF, EPUB and Kindle. Book excerpt: The tools and techniques you need to break the analog design bottleneck! Ten years ago, analog seemed to be a dead-end technology. Today, System-on-Chip (SoC) designs are increasingly mixed-signal designs. With the advent of application-specific integrated circuits (ASIC) technologies that can integrate both analog and digital functions on a single chip, analog has become more crucial than ever to the design process. Today, designers are moving beyond hand-crafted, one-transistor-at-a-time methods. They are using new circuit and physical synthesis tools to design practical analog circuits; new modeling and analysis tools to allow rapid exploration of system level alternatives; and new simulation tools to provide accurate answers for analog circuit behaviors and interactions that were considered impossible to handle only a few years ago. To give circuit designers and CAD professionals a better understanding of the history and the current state of the art in the field, this volume collects in one place the essential set of analog CAD papers that form the foundation of today's new analog design automation tools. Areas covered are: * Analog synthesis * Symbolic analysis * Analog layout * Analog modeling and analysis * Specialized analog simulation * Circuit centering and yield optimization * Circuit testing Computer-Aided Design of Analog Integrated Circuits and Systems is the cutting-edge reference that will be an invaluable resource for every semiconductor circuit designer and CAD professional who hopes to break the analog design bottleneck.

Book Frontiers In Electronics

Download or read book Frontiers In Electronics written by Sorin Cristoloveanu and published by World Scientific. This book was released on 2009-08-06 with total page 335 pages. Available in PDF, EPUB and Kindle. Book excerpt: Frontiers in Electronics contains the selected best papers presented at the Workshop on Frontiers in Electronics (WOFE-07). This meeting was the fifth in the series of WOFE workshops, and strongly reinforced the tradition of scientific quality and visionary research. The issues addressed ranged from THz and infrared electronics to nanoelectronics and photonics. The papers focused on the fabrication, characterization and applications of nanodevices; wide band gap structures; and state-of-the-art FETs. The participants also discussed the device physics and processing issues including aspects related to SOI and germanium-on-insulator technologies, TFTs, and advanced CMOS and MOSFETs. It is this cross-pollination between different but related fields that made this conference very special.This book, which goes beyond the publication of the WOFE Proceedings, includes full-length invited papers selected at the conference and reviewed by international leaders. The book is divided into four distinct sections, with the common denominator throughout being the “nano-device”, present under various metamorphoses in the wide CMOS and optoelectronics arena./a

Book SiGe  Ge  and Related Compounds 6  Materials  Processing  and Devices

Download or read book SiGe Ge and Related Compounds 6 Materials Processing and Devices written by D. Harame and published by The Electrochemical Society. This book was released on with total page 1042 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Silicon Compatible Materials  Processes  and Technologies for Advanced Integrated Circuits and Emerging Applications 8

Download or read book Silicon Compatible Materials Processes and Technologies for Advanced Integrated Circuits and Emerging Applications 8 written by F. Roozeboom and published by The Electrochemical Society. This book was released on 2018-05-04 with total page 188 pages. Available in PDF, EPUB and Kindle. Book excerpt: