Download or read book Process Optimization and Consumable Development for Chemical Mechanical Planarization CMP Processes written by Subrahmanya R. Mudhivarthi and published by . This book was released on 2007 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: ABSTRACT: Chemical Mechanical Planarization (CMP) is one of the most critical processing steps that enables fabrication of multilevel interconnects. The success of CMP process is limited by the implementation of an optimized process and reduction of process generated defects along with post CMP surface characteristics such as dishing and erosion. This thesis investigates to identify various sources of defects and studies the effect of factors that can be used to optimize the process. The major contributions of this work are: Understanding the effect of temperature rise on surface tribology, electrochemistry and post CMP pattern effects during the CMP process; investigating the effect of pad conditioning temperature and slurry flow rate on tribology and post CMP characteristics; development of novel slurries using polymer hybrid particles and improvement in slurry metrology to reduce surface damage during CMP. From the current research, it was shown that the effect of temperature on CMP tribology is predominantly affected by the polishing parameters and the polishing pad characteristics more than the chemical nature of the slurry. The effect of temperature is minimal on the resulting surface roughness but the with-in die non-uniformity is significantly affected by the temperature at the interface. Secondly, in this research it was shown that the effectiveness and aggressiveness of the pad conditioning process is highly influenced by the conditioning temperature. This aspect can be utilized to optimize the parameters for the pad conditioning process. Further, post CMP characteristics such as dishing, erosion and metal loss on patterned samples were shown to decrease with increase in slurry flow rate. This research then concentrates on the development of novel low defect slurry using polymer hybrid abrasive particles. Several varieties of surface functionalized polymer particles were employed to make oxide CMP slurries. These novel slurries proved to be potential candidates to reduce surface damage during CMP as they resulted in low coefficient of friction and much less surface scratches as compared to conventional abrasives. Thus, this research helps to reduce defects and non-planarity issues during CMP process thereby improving yield and reducing the cost of ownership.

Download or read book Integrated Modeling of Chemical Mechanical Planarization for Sub Micron IC Fabrication written by Jianfeng Luo and published by Springer Science & Business Media. This book was released on 2013-03-09 with total page 327 pages. Available in PDF, EPUB and Kindle. Book excerpt: Chemical mechanical planarization, or chemical mechanical polishing as it is simultaneously referred to, has emerged as one of the critical processes in semiconductor manufacturing and in the production of other related products and devices, MEMS for example. Since its introduction some 15+ years ago CMP, as it is commonly called, has moved steadily into new and challenging areas of semiconductor fabrication. Demands on it for consistent, efficient and cost-effective processing have been steady. This has continued in the face of steadily decreasing feature sizes, impressive increases in wafer size and a continuing array of new materials used in devices today. There are a number of excellent existing references and monographs on CMP in circulation and we defer to them for detailed background information. They are cited in the text. Our focus here is on the important area of process mod els which have not kept pace with the tremendous expansion of applications of CMP. Preston's equation is a valuable start but represents none of the subtleties of the process. Specifically, we refer to the development of models with sufficient detail to allow the evaluation and tradeoff of process inputs and parameters to assess impact on quality or quantity of production. We call that an "integrated model" and, more specifically, we include the important role of the mechanical elements of the process.

Download or read book Integrated Modeling of Chemical Mechanical Planarization for Sub Micron IC Fabrication written by Jianfeng Luo and published by Springer. This book was released on 2014-03-12 with total page 311 pages. Available in PDF, EPUB and Kindle. Book excerpt: Chemical mechanical planarization, or chemical mechanical polishing as it is simultaneously referred to, has emerged as one of the critical processes in semiconductor manufacturing and in the production of other related products and devices, MEMS for example. Since its introduction some 15+ years ago CMP, as it is commonly called, has moved steadily into new and challenging areas of semiconductor fabrication. Demands on it for consistent, efficient and cost-effective processing have been steady. This has continued in the face of steadily decreasing feature sizes, impressive increases in wafer size and a continuing array of new materials used in devices today. There are a number of excellent existing references and monographs on CMP in circulation and we defer to them for detailed background information. They are cited in the text. Our focus here is on the important area of process mod els which have not kept pace with the tremendous expansion of applications of CMP. Preston's equation is a valuable start but represents none of the subtleties of the process. Specifically, we refer to the development of models with sufficient detail to allow the evaluation and tradeoff of process inputs and parameters to assess impact on quality or quantity of production. We call that an "integrated model" and, more specifically, we include the important role of the mechanical elements of the process.

Download or read book Advances in Chemical Mechanical Planarization CMP written by Babu Suryadevara and published by Woodhead Publishing. This book was released on 2021-09-10 with total page 650 pages. Available in PDF, EPUB and Kindle. Book excerpt: Advances in Chemical Mechanical Planarization (CMP), Second Edition provides the latest information on a mainstream process that is critical for high-volume, high-yield semiconductor manufacturing, and even more so as device dimensions continue to shrink. The second edition includes the recent advances of CMP and its emerging materials, methods, and applications, including coverage of post-CMP cleaning challenges and tribology of CMP. This important book offers a systematic review of fundamentals and advances in the area. Part one covers CMP of dielectric and metal films, with chapters focusing on the use of current and emerging techniques and processes and on CMP of various materials, including ultra low-k materials and high-mobility channel materials, and ending with a chapter reviewing the environmental impacts of CMP processes. New content addressed includes CMP challenges with tungsten, cobalt, and ruthenium as interconnect and barrier films, consumables for ultralow topography and CMP for memory devices. Part two addresses consumables and process control for improved CMP and includes chapters on CMP pads, diamond disc pad conditioning, the use of FTIR spectroscopy for characterization of surface processes and approaches for defection characterization, mitigation, and reduction. Advances in Chemical Mechanical Planarization (CMP), Second Edition is an invaluable resource and key reference for materials scientists and engineers in academia and R&D. Reviews the most relevant techniques and processes for CMP of dielectric and metal films Includes chapters devoted to CMP for current and emerging materials Addresses consumables and process control for improved CMP, including post-CMP

Download or read book Yield Improvement of Chemical Mechanical Planarization Processes written by Sutee Eamkajornsiri and published by . This book was released on 2005 with total page 298 pages. Available in PDF, EPUB and Kindle. Book excerpt: Chemical mechanical polishing (CMP) is a planarization process that produces high quality surfaces both locally and globally. It is one of the key process steps during fabrication of very large scale integrated (VLSI) chips in integrated circuit (IC) manufacturing. High and reliable wafer yield is critical in the CMP process; it is dependent upon uniformity of material removal rate across the entire wafer. The focus on this research is the development of control algorithm for CMP process. Wafer-scale and die-scale models are the two scales used in this study. To achieve improvement in wafer yield, three control strategies are formulated with greedy algorithm, method heuristic and non-linear programming in this wafer-scale. The simulation results show that average wafer yield from genetic algorithm is improved, compared to greedy algorithm. Moreover, average wafer yield from non-linear programming is also improved, compared to greedy algorithm. At die-scale, a comprehensive control algorithm is developed based on the MRR equations with interface pressure as a control parameter. The interface pressure is varied spatially and/or temporally across the die. In this concept, three control strategies are developed and studied. The strategies are included spatial pressure control, spatial and temporal pressure control, and look-ahead scheduled pressure control. The simulation results of these three strategies show improvement in the upper surface uniformity; however, look-ahead scheduled pressure control seems to be the promising algorithm.

Download or read book Process Optimization and Fundamental Consumables Characterization of Advanced Dielectric and Metal Chemical Mechanical Planarization written by Xiaoyan Liao and published by . This book was released on 2014 with total page 232 pages. Available in PDF, EPUB and Kindle. Book excerpt: This dissertation presents a series of studies related to the characterization and optimization of consumables during Chemical Mechanical Planarization (CMP). These studies are also evaluated with the purpose of reducing the cost of ownership as well as minimizing the potential environmental impacts. It is well known that pad-wafer contact and pad surface micro-structure have significant impacts on polishing performance. The first study in this dissertation investigates the effect of pad surface contact and topography on polishing performance during copper CMP. Two different types of diamond discs (3M A2810 disc and MMC TRD disc) are used to condition the polishing pad. Pad surface contact area and topography are analyzed using laser confocal microscopy and scanning electron microscopy (SEM) to illustrate how variations in pad surface micro-texture affect the copper removal rate and the coefficient of friction (COF). Polishing results show that the 3M A2810 disc generates significantly higher COF (16%) and removal rate (39%) than the MMC TRD disc. Pad surface analysis results show that the 3M A2810 disc and MMC TRD disc generate similar pad surface height probability density function and pad surface abruptness. On the other hand, the MMC TRD disc generates large flat near contact areas that correspond to fractured and collapsed pore walls while the 3M A2810 disc generates solid contact area and clear pore structures. The fractured and collapsed pore walls generated by the MMC TRD disc partly cover the adjacent pores, making the pad surface more lubricated during wafer polishing and resulting in a significantly lower COF and removal rate. In the next study, the individual "large" pad surface contact areas are differentiated from the "small" contact areas and their role in copper CMP is investigated. Surface topography and the structure of a typical individual large contact area are examined via laser confocal microscopy and SEM. In addition, the Young's Modulus of the pad surface material is simulated. A case study is presented to illustrate the role of the individual large contact area of IC1000 K-groove pad in copper CMP. SEM analysis shows that the individual large pad surface contact areas are induced by fractured pore walls and loosely attached pad debris. Simulation results indicate that individual large contact areas correspond to very low values of the Young's modulus (about 50 MPa). Such low values indicate that the pad material is soft and the summit underlying the individual large contact is not fully supported. As a result, individual large contact area implies low contact pressure and may contribute little to removal rate. Case study results confirm that the individual large contact area has minimal contribution to removal rate and indicate that the removal rate is mainly caused by small individual contact areas. In our case, small contact areas correspond to those smaller than 9 square microns. We believe that this methodology can be also applied for other kinds of pad, although the threshold values that may define "small" and "large" individual contact areas for different pads and processes need to be further investigated. In the third study, the effect of pad surface micro-texture in interlayer dielectric CMP is also investigated. Blanket 200-mm oxide wafers are polished and the polishing pad is conditioned under two different conditioning forces (26.7 and 44.5 N). Results show that when conditioning force is increased from 26.7 to 44.5 N, oxide removal rate increases by 65% while COF increases by only 7%. Pad surface contact area and topography are measured and analyzed to illustrate their effects on the oxide removal rate. While the two conditioning forces generate similar pad surface abruptness, pad surface contact area is significantly lower (by 71%) at the conditioning force of 44.5 N. Such dramatic decrease in pad surface contact area leads to a significant increase in local contact pressure and therefore results in a significant increase in oxide removal rate. The oxide removal rate and local contact pressure exhibits a Prestonian relationship. Besides the above studies on the effect of the pad surface micro-texture during blanket wafer polishing, the fourth study investigates how pad micro-texture affects dishing and erosion during shallow trench isolation (STI) patterned wafer polishing. Two different types of diamond discs (3M A2810 disc and MMC TRD disc) are used to condition the pad during wafer polishing. Dishing and erosion analysis for the patterned wafer polishing is performed using a surface profiler. To illustrate the effect of pad surface micro-texture on dishing and erosion, pad surface abruptness and mean pad summit curvature are analyzed using laser confocal microscopy. Polishing results show that the two discs generate similar blanket wafer removal rates, while the MMC TRD disc generate significantly higher dishing and erosion than the 3M A2810 disc during patterned wafer polishing. Results of pad surface micro-texture analysis show that the MMC TRD disc generates sharper asperities with higher mean pad summit curvature than the 3M A2810 disc, resulting in higher dishing and erosion. Another contribution of this dissertation is the development of a slurry film thickness quantification technique using ultraviolet-enhanced fluorescence. The technique is developed to measure slurry film thickness at any location of interest. In the next study of this dissertation, this new technique is applied to determine how two different slurry application/injection schemes (standard pad center area application method and novel slurry injection system) along with various polishing conditions such as sliding velocity, ring pressure and slurry flow rate affect slurry availability in the bow wave region of the polisher. For the standard pad center area application method, slurry is directly applied onto the pad center area and a large amount of fresh slurry flow directly off the pad surface without flowing to the pad-retaining ring interface due to the centrifugal forces. For the novel slurry injection system, slurry is introduced through an injector that is placed adjacent (

Download or read book Physicochemical Modeling of Copper Chemical Mechanical Planarization CMP Considering Synergies in Removal Materials written by Seungchoun Choi and published by . This book was released on 2013 with total page 166 pages. Available in PDF, EPUB and Kindle. Book excerpt: With stringent requirements of copper chemical mechanical planarization (CMP), such as minimized step heights, enhanced uniformity and minimal defects, the CMP process needs to be improved based on a fundamental understanding of the material removal mechanisms. Also, with the stringent requirements, the problems in copper CMP process cannot be resolved solely improving the process itself; rather, systemic understanding of the entire manufacturing processes is necessary, demanding a robust copper CMP model to be implemented to design for manufacturing (DfM) tools. Previous models heavily relied on Preston's equation (), which needs to be calibrated for every new set of processing parameters, slowing down the process development. Previous models focused on limited interactions of the consumables and the workpiece during copper CMP, being insufficient at capturing the synergies between chemical and mechanical aspects of copper CMP. Therefore, a quantitative and physicochemical model of copper CMP that predicts material removal rate (MRR) was proposed while focusing on the interplay of consumables and copper and the synergies between chemical and mechanical aspects of the process. While considering the synergies, two mechanisms of the material removal during copper CMP were suggested: chemically dominant and mechanically dominant mechanisms. The total MRR during copper CMP was determined by summing those two contributions. The chemically dominant mechanism attributed the material removal during copper CMP to the removal of the protective material formed on the surface of copper and to the chemical dissolution of copper from the surface both at regions occupied and not occupied by the protective material with different rates. The kinetics of the formation of the protective material at the millisecond scale were studied through electrochemical experiments and theoretical analysis where a governing equation for the adsorption of benzotriazole (BTA) was constructed and solved. It was found that the grown protective material (CuBTA) during copper CMP was only a fraction of a monolayer partly occupying the surface of a wafer. This was because the time allowed for the adsorption of BTA on the surface of copper was limited by the time between consecutive asperity and copper interactions, which was only of the order of one millisecond. The formation and the removal of the protective material were assumed to be balanced during CMP, yielding a constant chemically dominant MRR. The removal of the protective material by abrasion with abrasive particles was investigated by in situ electrochemical measurement during polishing. The removal efficiency of a pad asperity where abrasive particles are embedded was evaluated from the measurements and was compared with the theoretical analysis. It showed a good agreement and suggested that the copper during CMP is mostly deformed elastically by the abrasive particles. The influence of the concentration of copper ions on the kinetics of the formation of the protective material was also investigated using potential-step chronoamperometry using two types of copper microelectrode, namely a three dimensional and a planar electrode. The amount of copper ion may easily build up to a level that exceeds the solubility product of Cu(II)BTA2. Under these conditions, Cu(II)BTA2 can nucleate, consuming the protective material formed on the surface of copper. This phenomenon is highly undesirable as it increases the dissolution rates at the regions where the protective material is removed, worsening the topography after copper CMP. The mechanically dominant MRR was determined from the volume of a wafer that is plastically deformed by indentation of abrasives that are squeezed between pad asperities and the wafer. The shear stress induced in copper by the force applied on an abrasive is lower than the ideal shear strength of copper, which is the relevant property for plasticity at this length scale. However, the crystallographic defects in the copper crystal may reduce the hardness of the material, allowing the material to be plastically deformed. Especially the roughness of the surface induced by chemical additives in the slurry greatly reduces the resistance to plastic deformation of copper. Because of the localized spatial distribution of those crystallographic defects the plastic deformation occurs only locally. Also, only a part of the plastically deformed material will be detached from the surface, contributing to the MRR. While applying this mechanism, the discrepancy of the MRR behavior with varying size and concentration of abrasives between the prediction and the experimental observations was resolved by proposing a new mechanism that determines the number of abrasives participating in the abrasion of the material. The transport mechanisms of abrasive particles toward a wafer and the electrostatic interactions between abrasives were considered to affect the number of abrasive particles deposited on the surface of a wafer. If the deposition of abrasives on the surface of a wafer is limited by the diffusion of abrasives, the MRR decreases with the size of the abrasives. In contrast, the MRR increases with the size of abrasives if the deposition of the abrasives is limited by the jamming limit of the deposited abrasives at the surface of the wafer. Also, micrometer sized abrasives increases the MRR when the size is increased because the deposition of abrasives is limited by the interception mechanism of the abrasives. The proposed model successfully captured the synergies between chemical and mechanical aspects and quantitatively predicted the MRR during copper CMP. In the future, the model will be applied to predict the pattern dependent variability of topography of a wafer after CMP. The proposed model quantitatively predicts the local MRR of copper. Along with a robust model for dielectric and barrier materials, the model can predict the topography after CMP, contributing to the optimization of the CMP process.

Download or read book Chemical Mechanical Planarization of Microelectronic Materials written by Joseph M. Steigerwald and published by John Wiley & Sons. This book was released on 2008-09-26 with total page 337 pages. Available in PDF, EPUB and Kindle. Book excerpt: Chemical Mechanical Planarization (CMP) plays an important role in today's microelectronics industry. With its ability to achieve global planarization, its universality (material insensitivity), its applicability to multimaterial surfaces, and its relative cost-effectiveness, CMP is the ideal planarizing medium for the interlayered dielectrics and metal films used in silicon integrated circuit fabrication. But although the past decade has seen unprecedented research and development into CMP, there has been no single-source reference to this rapidly emerging technology-until now. Chemical Mechanical Planarization of Microelectronic Materials provides engineers and scientists working in the microelectronics industry with unified coverage of both the fundamental mechanisms and engineering applications of CMP. Authors Steigerwald, Murarka, and Gutmann-all leading CMP pioneers-provide a historical overview of CMP, explain the various chemical and mechanical concepts involved, describe CMP materials and processes, review the latest scientific data on CMP worldwide, and offer examples of its uses in the microelectronics industry. They provide detailed coverage of the CMP of various materials used in the making of microcircuitry: tungsten, aluminum, copper, polysilicon, and various dielectric materials, including polymers. The concluding chapter describes post-CMP cleaning techniques, and most chapters feature problem sets to assist readers in developing a more practical understanding of CMP. The only comprehensive reference to one of the fastest growing integrated circuit manufacturing technologies, Chemical Mechanical Planarization of Microelectronic Materials is an important resource for research scientists and engineers working in the microelectronics industry. An indispensable resource for scientists and engineers working in the microelectronics industry Chemical Mechanical Planarization of Microelectronic Materials is the only comprehensive single-source reference to one of the fastest growing integrated circuit manufacturing technologies. It provides engineers and scientists who work in the microelectronics industry with unified coverage of both the fundamental mechanisms and engineering applications of CMP, including: * The history of CMP * Chemical and mechanical underpinnings of CMP * CMP materials and processes * Applications of CMP in the microelectronics industry * The CMP of tungsten, aluminum, copper, polysilicon, and various dielectrics, including polymers used in integrated circuit fabrication * Post-CMP cleaning techniques * Chapter-end problem sets are also included to assist readers in developing a practical understanding of CMP.

Download or read book Microelectronic Applications of Chemical Mechanical Planarization written by Yuzhuo Li and published by John Wiley & Sons. This book was released on 2007-12-04 with total page 760 pages. Available in PDF, EPUB and Kindle. Book excerpt: An authoritative, systematic, and comprehensive description of current CMP technology Chemical Mechanical Planarization (CMP) provides the greatest degree of planarization of any known technique. The current standard for integrated circuit (IC) planarization, CMP is playing an increasingly important role in other related applications such as microelectromechanical systems (MEMS) and computer hard drive manufacturing. This reference focuses on the chemical aspects of the technology and includes contributions from the foremost experts on specific applications. After a detailed overview of the fundamentals and basic science of CMP, Microelectronic Applications of Chemical Mechanical Planarization: * Provides in-depth coverage of a wide range of state-of-the-art technologies and applications * Presents information on new designs, capabilities, and emerging technologies, including topics like CMP with nanomaterials and 3D chips * Discusses different types of CMP tools, pads for IC CMP, modeling, and the applicability of tribometrology to various aspects of CMP * Covers nanotopography, CMP performance and defect profiles, CMP waste treatment, and the chemistry and colloidal properties of the slurries used in CMP * Provides a perspective on the opportunities and challenges of the next fifteen years Complete with case studies, this is a valuable, hands-on resource for professionals, including process engineers, equipment engineers, formulation chemists, IC manufacturers, and others. With systematic organization and questions at the end of each chapter to facilitate learning, it is an ideal introduction to CMP and an excellent text for students in advanced graduate courses that cover CMP or related semiconductor manufacturing processes.

Download or read book Proceedings of the Symposium Om Process Control Diagnostics and Modeling in Semiconductor Manufacturing written by M. Meyyappan and published by The Electrochemical Society. This book was released on 1995 with total page 644 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Integrated Modeling of Chemical Mechanical Planarization Polishing CMP for Integrated Circuit Fabrication written by Jianfeng Luo and published by . This book was released on 2003 with total page 716 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Chemical Mechanical Polishing 10 written by G. Banerjee and published by The Electrochemical Society. This book was released on 2009-05 with total page 145 pages. Available in PDF, EPUB and Kindle. Book excerpt: The papers included in this issue of ECS Transactions were originally presented in the symposium ¿Chemical Mechanical Polishing 10¿, held during the 215th meeting of The Electrochemical Society, in San Francisco, California from May 24 to 29, 2009.

Download or read book Chemical Mechanical Planarization Volume 767 written by Duane S. Boning and published by . This book was released on 2003-08-27 with total page 376 pages. Available in PDF, EPUB and Kindle. Book excerpt: Chemical-mechanical planarization (CMP) has emerged as a critical fabrication technology for advanced integrated circuits. Even as the applications of CMP have diversified and we have begun to understand aspects of the physics and chemistry of the process, a new generation of CMP innovations is unfolding. New slurries and consumables are under development. New applications to novel devices continue to appear. This book, the most recent in a successful series on CMP, offers a review of the advances to date and provides a comprehensive discussion of the future challenges that must be overcome. Presentations from academia, government labs and industry are featured. Topics include; CMP modeling; CMP science; CMP slurries and particles for planarization of copper, oxide, and other materials; planarization applications including shallow trench isolation (STI), copper damascene, and novel devices and CMP integration.

Download or read book Chemical Mechanical Polishing 14 written by R. Rhoades and published by The Electrochemical Society. This book was released on 2016-09-21 with total page 93 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Chemical Mechanical Planarization of Semiconductor Materials written by M.R. Oliver and published by Springer Science & Business Media. This book was released on 2004-01-26 with total page 444 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book contains a comprehensive review of CMP (Chemical-Mechanical Planarization) technology, one of the most exciting areas in the field of semiconductor technology. It contains detailed discussions of all aspects of the technology, for both dielectrics and metals. The state of polishing models and their relation to experimental results are covered. Polishing tools and consumables are also covered. The leading edge issues of damascene and new dielectrics as well as slurryless technology are discussed.

Download or read book Chemical Mechanical Planarization VI written by Sudipta Seal and published by The Electrochemical Society. This book was released on 2003 with total page 370 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Chemical Mechanical Planarization of Semiconductor Materials written by M.R. Oliver and published by Springer Science & Business Media. This book was released on 2013-03-14 with total page 432 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book contains a comprehensive review of CMP (Chemical-Mechanical Planarization) technology, one of the most exciting areas in the field of semiconductor technology. It contains detailed discussions of all aspects of the technology, for both dielectrics and metals. The state of polishing models and their relation to experimental results are covered. Polishing tools and consumables are also covered. The leading edge issues of damascene and new dielectrics as well as slurryless technology are discussed.