Download or read book Proceedings of the Tenth International Workshop on the Physics of Semiconductor Devices December 14 18 1999 New Delhi 2 2000 written by and published by Allied Publishers. This book was released on 2000 with total page 800 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Index of Conference Proceedings written by British Library. Document Supply Centre and published by . This book was released on 2003 with total page 870 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Oxide and Nitride Semiconductors written by Takafumi Yao and published by Springer Science & Business Media. This book was released on 2009-03-20 with total page 525 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is a unique book devoted to the important class of both oxide and nitride semiconductors. It covers processing, properties and applications of ZnO and GaN. The aim of this book is to provide the fundamental and technological issues for both ZnO and GaN.

Download or read book JJAP written by and published by . This book was released on 2004 with total page 1306 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Physics Chemistry and Application of Nanostructures written by Viktor Evgen?evich Borisenko and published by World Scientific. This book was released on 2007 with total page 630 pages. Available in PDF, EPUB and Kindle. Book excerpt: This proceedings volume presents invited reviews and original short notes of recent results obtained in studies concerning the fabrication and application of nanostructures, which hold great promise for the new generation of electronic and optoelectronic devices. Governing exciting and relatively new topics such as fast-progressing nanoelectronics and optoelectronics, molecular electronics and spintronics, as well as nanotechnology and quantum processing of information, this books gives readers a more complete understanding of the practical uses of nanotechnology and nanostructures.

Download or read book JJAP Letters written by and published by . This book was released on 2004 with total page 1108 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Comprehensive Semiconductor Science and Technology written by and published by Newnes. This book was released on 2011-01-28 with total page 3572 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductors are at the heart of modern living. Almost everything we do, be it work, travel, communication, or entertainment, all depend on some feature of semiconductor technology. Comprehensive Semiconductor Science and Technology, Six Volume Set captures the breadth of this important field, and presents it in a single source to the large audience who study, make, and exploit semiconductors. Previous attempts at this achievement have been abbreviated, and have omitted important topics. Written and Edited by a truly international team of experts, this work delivers an objective yet cohesive global review of the semiconductor world. The work is divided into three sections. The first section is concerned with the fundamental physics of semiconductors, showing how the electronic features and the lattice dynamics change drastically when systems vary from bulk to a low-dimensional structure and further to a nanometer size. Throughout this section there is an emphasis on the full understanding of the underlying physics. The second section deals largely with the transformation of the conceptual framework of solid state physics into devices and systems which require the growth of extremely high purity, nearly defect-free bulk and epitaxial materials. The last section is devoted to exploitation of the knowledge described in the previous sections to highlight the spectrum of devices we see all around us. Provides a comprehensive global picture of the semiconductor world Each of the work's three sections presents a complete description of one aspect of the whole Written and Edited by a truly international team of experts

Download or read book Hydride vapour phase epitaxy growth crystal properties and dopant incorporation in gallium nitride written by Patrick Hofmann and published by BoD – Books on Demand. This book was released on 2018-08-15 with total page 166 pages. Available in PDF, EPUB and Kindle. Book excerpt: This dissertation employs doping to investigate basic gallium nitride (GaN) crystal properties and to solve challenges of the hydride vapour phase epitaxy (HVPE) growth process. Whereas the first chapter is a short introduction to the history of the GaN single crystal growth, the 2nd chapter introduces to current crystal growth techniques, discusses properties of the GaN material system and the resulting influence on the applicable crystal growth techniques. HVPE, as a vapour phase epitaxy crystal growth method will be explained in greater detail, with focus on the used vertical reactor and its capabilities for doping. The 3rd chapter then focusses on point defects in GaN, specifically on intentionally introduced extrinsic point defects used for doping purposes, i.e. to achieve p-type, n-type or semi-insulating behaviour. Different dopants will be reviewed before the diffusion of point defects in a solid will be discussed. The in-situ introduction of iron, manganese, and carbon during crystal growth is employed in chapter 4 to compensate the unintentional doping (UID) of the GaN crystals, and therefore to achieve truly semi-insulating behaviour of the HVPE GaN. However the focus of this chapter lies on the characterisation of the pyroelectric coefficient (p), as semi-insulating properties are a necessary requirement for the applied Sharp-Garn measurement method. The creation of tensile stress due to in-situ silicon doping during GaN crystal growth is the topic of the 5th chapter. The tensile stress generation effect will be reproduced and the strain inside the crystal will be monitored ex-situ employing Raman spectroscopy. The n-type doping is achieved by using a vapour phase doping line and a process is developed to hinder the tensile strain generation effect. The 6th chapter concentrates on the delivery of the doping precursor via a solid state doping line, a newly developed doping method. Similar to chapter 5, the doping line is characterised carefully before the germanium doping is employed to the GaN growth. The focus lies on the homogeneity of the germanium doping and it is compared compared to the silicon doping and the vapour phase doping line. Benefits and drawbacks are discussed in conjunction with the obtained results. The germanium doping via solid state doping line is applied to the HVPE GaN growth process to measure accurately growth process related properties unique to the applied set of GaN growth parameters.

Download or read book International Aerospace Abstracts written by and published by . This book was released on 1999 with total page 1020 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Amorphous Metals and Semiconductors written by P. Haasen and published by Elsevier. This book was released on 2013-10-22 with total page 484 pages. Available in PDF, EPUB and Kindle. Book excerpt: Amorphous Metals and Semiconductors contains the proceedings of an international workshop held at Coronado, California, USA on May 12-18, 1985. Organized into five parts, this book first looks into the historical perspective on semiconductors and metals. This book then explains the glass formation, magnetic glasses, and amorphous semiconductors. The mechanical and chemical properties of these materials are also given.

Download or read book Wide Bandgap Semiconductor Materials and Devices 16 written by S. Jang and published by The Electrochemical Society. This book was released on 2015 with total page 347 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Japanese Journal of Applied Physics written by and published by . This book was released on 2004 with total page 980 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Semiconductor Process Reliability in Practice written by Zhenghao Gan and published by McGraw Hill Professional. This book was released on 2012-10-06 with total page 623 pages. Available in PDF, EPUB and Kindle. Book excerpt: Proven processes for ensuring semiconductor device reliability Co-written by experts in the field, Semiconductor Process Reliability in Practice contains detailed descriptions and analyses of reliability and qualification for semiconductor device manufacturing and discusses the underlying physics and theory. The book covers initial specification definition, test structure design, analysis of test structure data, and final qualification of the process. Real-world examples of test structure designs to qualify front-end-of-line devices and back-end-of-line interconnects are provided in this practical, comprehensive guide. Coverage includes: Basic device physics Process flow for MOS manufacturing Measurements useful for device reliability characterization Hot carrier injection Gate-oxide integrity (GOI) and time-dependent dielectric breakdown (TDDB) Negative bias temperature instability Plasma-induced damage Electrostatic discharge protection of integrated circuits Electromigration Stress migration Intermetal dielectric breakdown

Download or read book Physics of Semiconductor Devices written by Vikram Kumar and published by . This book was released on 2000 with total page 820 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Government Reports Announcements Index written by and published by . This book was released on 1996-02 with total page 792 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Beyond Si Based CMOS Devices written by Sangeeta Singh and published by Springer Nature. This book was released on with total page 331 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book The Physics of Semiconductor Devices written by Rajendra Singh and published by Springer Nature. This book was released on with total page 406 pages. Available in PDF, EPUB and Kindle. Book excerpt: