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Book Principles and Analysis of AlGaAs GaAs Heterojunction Bipolar Transistors

Download or read book Principles and Analysis of AlGaAs GaAs Heterojunction Bipolar Transistors written by Juin J. Liou and published by Artech House Publishers. This book was released on 1996 with total page 248 pages. Available in PDF, EPUB and Kindle. Book excerpt: The first book devoted entirely to HBTs, this reference examines the basic concept, standard and advanced structures, noise performance, reliability issues, and simulation. It's main emphasis is on device physics and its mathematical representations, through which the operational characterization of AlGaAs/GaAs HBTs can be understood. It enables device engineers, device researchers, and circuit designers to increase their knowledge of HBT principles and behavior with significantly less literature research time, and to design optimal HBTs with minimal design time. Extensively referenced, with 150 illustrations and 250 equations.

Book DC Study of AlGaAs GaAs Heterojunction Bipolar Transistors Grown on Silicon Substrates

Download or read book DC Study of AlGaAs GaAs Heterojunction Bipolar Transistors Grown on Silicon Substrates written by Tony Kam-Ming Ma and published by . This book was released on 1990 with total page 250 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Current Trends In Heterojunction Bipolar Transistors

Download or read book Current Trends In Heterojunction Bipolar Transistors written by M F Chang and published by World Scientific. This book was released on 1996-01-29 with total page 437 pages. Available in PDF, EPUB and Kindle. Book excerpt: Recent advances in communication, digital signal processing and computational systems demand very high performance electronic circuits. Heterojunction Bipolar Transistors (HBTs) have the potential of providing a more efficient solution to many key system requirements through intrinsic device advantages. This book reviews the present status of GaAs, InP and silicon-based HBT technologies and their applications to digital, analog, microwave and mixed-signal circuits and systems. It represents the first major effort to cover the complete scope of the HBT technology development in the past decade, starting from the fundamental device physics, material growth, device reliability, scaling, processing, modeling to advanced HBT integrated circuit design for various system applications.

Book SiGe GaAs and InP Heterojunction Bipolar Transistors

Download or read book SiGe GaAs and InP Heterojunction Bipolar Transistors written by Jiann S. Yuan and published by Wiley-Interscience. This book was released on 1999-04-12 with total page 496 pages. Available in PDF, EPUB and Kindle. Book excerpt: An up-to-date, comprehensive guide to heterojunction bipolar transistor technology. Owing to their superior performance in microwave and millimeter-wave applications, heterojunction bipolar transistors (HBTs) have become a major force in mobile and wireless communications. This book offers an integrated treatment of SiGe, GaAs, and InP HBTs, presenting a much-needed overview of HBTs based on different materials systems-their fabrication, analysis, and testing procedures. Highly respected expert Jiann S. Yuan discusses in depth the dc and RF performance and modeling of HBT devices, including simulation, thermal instability, reliability, low-temperature and high-temperature performance, and HBT analog and digital circuits. He provides step-by-step presentations of HBT materials-including Si HBTs and III-V and IV-IV compound HBTs, which are rarely described in the literature. Also covered are device and circuit interaction as well as specific high-speed devices in mobile and wireless communications. This immensely useful guide to a rapidly expanding field includes more than 200 figures, tables of different material systems in terms of their physical parameters, and up-to-date experimental results culled from the latest research. An essential resource for circuit and device designers in the semiconductor industry, SiGe, GaAs, and InP Heterojunction Bipolar Transistors is also useful for graduate students in electrical engineering, applied physics, and materials science.

Book Analysis of Collapse Patterns in Multi finger Power AlGaAs GaAs HBTs

Download or read book Analysis of Collapse Patterns in Multi finger Power AlGaAs GaAs HBTs written by and published by . This book was released on 1906 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: A new theory is developed in this paper to explain the collapse of current gain in multi-finger power AlGaAs/GaAs Heterojunction Bipolar Transistors. Two different collapse patterns are investigated. The reasons behind this unwanted phenomenon are clarified using a simple model to investigate the thermo-electrical interaction between the fingers. The method has been used to predict the collapse in AlGaAs/GaAs HBTs and the agreement is excellent.

Book Numerical Modeling of ALGAAs GAAs Heterojunction Bipolar Transistors

Download or read book Numerical Modeling of ALGAAs GAAs Heterojunction Bipolar Transistors written by A. M. Riyaz and published by . This book was released on 1990 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Characterization Modeling and Optimization of AlGaAs GaAs Heterojunction Bipolar Transistors

Download or read book Characterization Modeling and Optimization of AlGaAs GaAs Heterojunction Bipolar Transistors written by Madjid Hafizi-Esfahani and published by . This book was released on 1990 with total page 502 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book A Study of the Temperature Dependence of the DC Current voltage Characteristics of AlGaAs GaAs Heterojunction Bipolar Transistors with Application to Bandgap Voltage Reference Sources

Download or read book A Study of the Temperature Dependence of the DC Current voltage Characteristics of AlGaAs GaAs Heterojunction Bipolar Transistors with Application to Bandgap Voltage Reference Sources written by William G. Gazeley and published by . This book was released on 1989 with total page 190 pages. Available in PDF, EPUB and Kindle. Book excerpt: The bandgap voltage reference technique, as implemented in Silicon technology, has evolved to a state of advanced development and become the method of choice for temperature independent voltage biasing in integrated circuits. The heterojunction bipolar transistor (HBT), fabricated from epitaxial A1GaAs /GaAs, is developing to a point where basic circuit implementations are possible. This project extends the bandgap reference concept, as developed for Silicon bipolar junction transistor, to HBTs. The I [subscript C] - V [subscript BE] characteristics of sample HBTs are measured over a temperature range of 220K to 360K, and model parameters are determined from curve-fitting. Due to device nonidealities, such as high series resistance and low current gain, poor performance is expected from bandgap voltage reference sources made with HBTs.

Book Analysis of the Nonlinear Characteristics of Microwave Power Heterojunction Bipolar Transistors and Optoelectronic Integrated Circuits

Download or read book Analysis of the Nonlinear Characteristics of Microwave Power Heterojunction Bipolar Transistors and Optoelectronic Integrated Circuits written by Apostolos Samelis and published by . This book was released on 1996 with total page 790 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Processing of AlGaAs GaAs Heterojunction Bipolar Transistors

Download or read book Processing of AlGaAs GaAs Heterojunction Bipolar Transistors written by Anssi Hovinen and published by . This book was released on 2000 with total page 33 pages. Available in PDF, EPUB and Kindle. Book excerpt: