Download or read book Preparation and Characterization of Hydrogenated Amorphous Silicon Thin Films and Thin Film Solar Cells Produced by Ion Plating Techniques Third Quarterly Progress Report July 1 September 30 1979 written by and published by . This book was released on 1979 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Using quartz, sapphire and stainless steel substrates, hydrogenated a-Si films have been prepared by ion-plating techniques through a 1000 to 2000 volt hydrogen glow. The highest hydrogen content to date has been 18 a/o in a film evaporated in partial pressure of 55 .mu. of hydrogen. Optical band gaps of these films varied from 1.67 eV to 2.21 eV. Films made on sapphire substrates were used in IR-spectroscopy measurement; they had a doublet absorption peak at approximately 2000 cm−1 corresponding to SiH bond stretching.
Download or read book Energy Research Abstracts written by and published by . This book was released on 1982 with total page 1696 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Solar Energy Update written by and published by . This book was released on 1981 with total page 688 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Preparation and Characterization of Hydrogenated Amorphous Silicon Thin Films and Thin Film Solar Cells Produced by Ion Plating Techniques Final Report 1 January 1979 31 May 1980 written by and published by . This book was released on 1980 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Ion plating techniques for the preparation of hydrogenated amorphous silicon thin films have been successfully developed. The technique involves essentially the evaporation of elemental silicon through a d.c. produced hydrogen plasma. In this way hydrogen has been successfully incorporated into amorphous silicon films in concentrations as high as 30 atomic percent. Infrared spectroscopy indicates the usual SiHx stretching mode at approximately 2000 cm−1. Further evidence for the bonding of hydrogen was obtained from ESR measurement of hydrogenated and unhydrogenated samples. The measured unpaired spin density was a factor of 25 less in the hydrogenated sample. The optical absorption edges of the hydrogenated films fell in the usual range between 1.7 and 1.9 eV. Electrical conductivity measurements indicated a substantial reduction in the density of defect states in the gap as expected. It was also shown that hydrogenated amorphous silicon prepared by ion-plating could be doped by co-evaporation of the dopant element during film deposition. Both co-evaporated phosphorous and co-evaporated bismuth have been found to substantially increase the dark conductivity of a-Si:H while shifting the Fermi level towards the conduction band edge. An x-ray method for estimating the density and hydrogen content of a-Si:H has been developed. The measurement of strain in a-Si:H thin films is discussed. (WHK).
Download or read book Government Reports Announcements Index written by and published by . This book was released on 1980 with total page 1182 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Government Reports Annual Index written by and published by . This book was released on 1981 with total page 986 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Energy Research Abstracts written by and published by . This book was released on 1982 with total page 844 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Preparation and Characterization of Hydrogenated Amorphous Silicon Films Produced by Ion Plating and Hydrogenated Amorphous Boron Films Produced by Glow Discharge Decomposition written by and published by . This book was released on 1981 with total page 60 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Preparation and Characterization of Hydrogenated Amorphous silicon Films Produced by Ion Plating and Hydrogenated Amorphous boron Films Produced by Glow Discharge Decomposition written by Franklin H. Cocks and published by . This book was released on 1981 with total page 60 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Preparation and Physical Properties of Hydrogenated Amorphous Silicon Thin Films written by Gregory N. Parsons and published by . This book was released on 1989 with total page 384 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Impact of Contamination on Hydrogenated Amorphous Silicon Thin Films Solar Cells written by Jan Wördenweber and published by . This book was released on 2010 with total page 138 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Deposition and Characterization of Hydrogenated Silicon Thin Films for Flexible Solar Cell Applications written by and published by . This book was released on 2009 with total page 86 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book High Growth Rate Deposition of Hydrogenated Amorphous Silicon germanium Films and Devices Using ECR PECVD written by Yong Liu and published by . This book was released on 2002 with total page 170 pages. Available in PDF, EPUB and Kindle. Book excerpt: Hydrogenated amorphous silicon germanium (a-SiGe:H) films and devices have been extensively studied because of the tunable band gap for matching the solar spectrum and mature the fabrication techniques. a-SiGe:H thin film solar cells have great potential for commercial manufacture because of very low cost and adaptability to large scale manufacturing. Although it has been demonstrated that a-SiGe:H thin films and devices with good quality can be produced successfully, some issues regarding growth chemistry have remained yet unexplored, such as the hydrogen and inert gas dilution, bombardment effect, and chemical annealing, to name a few. The alloying of the SiGe introduces above an order-of-magnitude higher defect density, which degrades the performance of the a-SiGe:H thin film solar cells. This degradation becomes worse when high growth-rate deposition is required. The work presented here uses the Electron-Cyclotron-Resonance Plasma-Enhanced Chemical Vapor Deposition (ECR-PECVD) technique to fabricate a-SiGe:H films and devices with high growth rates. Helium gas, together with small amount of H2, was used as the plasma species. Thickness, optical band gap, conductivity, Urbach energy, mobility-lifetime product, and quantum efficiency were characterized during the process of pursuing good materials. High-quality material was successfully fabricated with the ECR-PECVD technique at high growth rates. The device we made with 1.47 eV band gap has a fill factor of 64.5%. With the graded band gap and graded doping techniques, 70% fill factor was achieved when the band gap was graded from 1.75 to 1.47 eV. We also got 68% fill factor with the band gap graded form 1.75 to 1.38 eV.
Download or read book The Improvement of Ion Plated Ag and Au Film Adherence to Si3N4 and SiC Surfaces for Increased Tribological Performance written by Talivaldis Spalvins and published by . This book was released on 1998 with total page 16 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book High Growth Rate Deposition of Hydrogenated Amorphous Silicon Germanium Films and Devices Using ECR PECVD written by and published by . This book was released on 2003 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Hydrogenated amorphous silicon germanium films (a-SiGe:H) and devices have been extensively studied because of the tunable band gap for matching the solar spectrum and mature the fabrication techniques. a-SiGe:H thin film solar cells have great potential for commercial manufacture because of very low cost and adaptability to large-scale manufacturing. Although it has been demonstrated that a-SiGe:H thin films and devices with good quality can be produced successfully, some issues regarding growth chemistry have remained yet unexplored, such as the hydrogen and inert-gas dilution, bombardment effect, and chemical annealing, to name a few. The alloying of the SiGe introduces above an order-of-magnitude higher defect density, which degrades the performance of the a-SiGe:H thin film solar cells. This degradation becomes worse when high growth-rate deposition is required. Preferential attachment of hydrogen to silicon, clustering of Ge and Si, and columnar structure and buried dihydride radicals make the film intolerably bad. The work presented here uses the Electron-Cyclotron-Resonance Plasma-Enhanced Chemical Vapor Deposition (ECR-PECVD) technique to fabricate a-SiGe:H films and devices with high growth rates. Helium gas, together with a small amount of H[sub 2], was used as the plasma species. Thickness, optical band gap, conductivity, Urbach energy, mobility-lifetime product, I-V curve, and quantum efficiency were characterized during the process of pursuing good materials. The microstructure of the a-(Si, Ge):H material was probed by Fourier-Transform Infrared spectroscopy. They found that the advantages of using helium as the main plasma species are: (1) high growth rate--the energetic helium ions break the reactive gas more efficiently than hydrogen ions; (2) homogeneous growth--heavy helium ions impinging on the surface promote the surface mobility of the reactive radicals, so that heteroepitaxy growth as clustering of Ge and Si, columnar structure are reduced; (3) surface hydrogen removal--heavier and more energetic helium ions break the Si-H much easier than hydrogen ions. The preferential attachment of Si-H to Ge-H is reduced. They also found that with the small amount of hydrogen put into the plasma, the superior properties of a-(Si, Ge):H made from pure hydrogen dilution plasma were still maintained. These hydrogen ions help to remove the subsurface weakly bonded hydrogen and buried hydrogen. They also help to passivate the Ge-dangling bond.
Download or read book Amorphous Thin Films for Solar cell Applications written by and published by . This book was released on 1979 with total page 39 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Plasma Deposition of Amorphous Silicon Based Materials written by Pio Capezzuto and published by Elsevier. This book was released on 1995-10-10 with total page 339 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductors made from amorphous silicon have recently become important for their commercial applications in optical and electronic devices including FAX machines, solar cells, and liquid crystal displays. Plasma Deposition of Amorphous Silicon-Based Materials is a timely, comprehensive reference book written by leading authorities in the field. This volume links the fundamental growth kinetics involving complex plasma chemistry with the resulting semiconductor film properties and the subsequent effect on the performance of the electronic devices produced. Focuses on the plasma chemistry of amorphous silicon-based materials Links fundamental growth kinetics with the resulting semiconductor film properties and performance of electronic devices produced Features an international group of contributors Provides the first comprehensive coverage of the subject, from deposition technology to materials characterization to applications and implementation in state-of-the-art devices
