Download or read book Preparation and Characterisation of Hydrogenated R F Sputtered Amorphous Silicon Carbide Films written by Fook Leong Loo and published by . This book was released on 1996 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Characterization of Amorphous Silicon carbon Alloy Films a Si C H Prepared by Radio Frequency RF Sputtering written by Chen Chen Lau and published by . This book was released on 2005 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Hydrogenated Amorphous Silicon Carbide Prepared Using DC Saddle Field PECVD for Photovoltaic Applications written by Cheng-Chieh Yang and published by . This book was released on 2011 with total page 260 pages. Available in PDF, EPUB and Kindle. Book excerpt: Hydrogenated amorphous silicon carbide (a-SiC:H) can provide exceptional surface passivation essential for high-efficiency crystalline silicon solar cells. This thesis reports on the fundamental study of a-SiC:H films deposited using a novel deposition technique, DC saddle field PECVD, in contrast to the conventional industrial use of RF-PECVD. The growth conditions were optimized and correlated with passivating, structural, and optical characteristics. The lifetime has a strong dependency on deposition temperature and improves by over two orders of magnitude as the temperature increases; the maximum lifetime achieved in this work reached 0.5 ms. In addition, the Tauc optical gap can be increased from 1.7 eV to 2.3 eV by varying the precursor gas mixture ratio. Post-deposition annealing experiments demonstrate thermal stability of the samples deposited at 250 °C and in some instances shows improvement in passivation quality by a factor of two with a one-step annealing treatment at 300 °C for 15 minutes.
Download or read book He Mechanical Properties of Amorphous Silicon Carbide Films Deposited by Pecvd and Rf Sputtering for Application as a Structural Layer in Microbridge Based Rf Mems written by Rocco John Parro (III.) and published by . This book was released on 2010 with total page 124 pages. Available in PDF, EPUB and Kindle. Book excerpt: The purpose of this thesis was to characterize the relevant mechanical properties of amorphous silicon carbide in order to evaluate its application to microbridge-based RF MEMS switches. For the study, Young's modulus and residual stress were determined by load deflection testing of bulk micromachined thin film diaphragms of SiC deposited by plasma-enhanced chemical vapor deposition (PECVD) and radio-frequency magnetron sputtering. The effects of film thickness, a silicon or silicon dioxide substrate material, and metallization with chromium and gold on the values of Young's modulus and residual stress were quantified for 300 and 500 nm-thick PECVD SiC films annealed at 450 @C. For bi-layered, 500 nm-thick sputtered SiC films on silicon, the effects of thermal annealing at 350@C and 450@C on the values of Young's modulus, residual stress, and Poisson's ratio were determined.
Download or read book Preparation and Characterization of Hydrogenated Amorphous Silicon Thin Films and Thin Film Solar Cells Produced by Ion Plating Techniques Final Report 1 January 1979 31 May 1980 written by and published by . This book was released on 1980 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Ion plating techniques for the preparation of hydrogenated amorphous silicon thin films have been successfully developed. The technique involves essentially the evaporation of elemental silicon through a d.c. produced hydrogen plasma. In this way hydrogen has been successfully incorporated into amorphous silicon films in concentrations as high as 30 atomic percent. Infrared spectroscopy indicates the usual SiHx stretching mode at approximately 2000 cm−1. Further evidence for the bonding of hydrogen was obtained from ESR measurement of hydrogenated and unhydrogenated samples. The measured unpaired spin density was a factor of 25 less in the hydrogenated sample. The optical absorption edges of the hydrogenated films fell in the usual range between 1.7 and 1.9 eV. Electrical conductivity measurements indicated a substantial reduction in the density of defect states in the gap as expected. It was also shown that hydrogenated amorphous silicon prepared by ion-plating could be doped by co-evaporation of the dopant element during film deposition. Both co-evaporated phosphorous and co-evaporated bismuth have been found to substantially increase the dark conductivity of a-Si:H while shifting the Fermi level towards the conduction band edge. An x-ray method for estimating the density and hydrogen content of a-Si:H has been developed. The measurement of strain in a-Si:H thin films is discussed. (WHK).
Download or read book RF Sputtering for Preparing Substantially Pure Amorphous Silicon Monohydride written by and published by . This book was released on 1982 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: A process for controlling the dihydride and monohydride bond densities in hydrogenated amorphous silicon produced by reactive rf sputtering of an amorphous silicon target. There is provided a chamber with an amorphous silicon target and a substrate therein with the substrate and the target positioned such that when rf power is applied to the target the substrate is in contact with the sputtering plasma produced thereby. Hydrogen and argon are fed to the chamber and the pressure is reduced in the chamber to a value sufficient to maintain a sputtering plasma therein, and then rf power is applied to the silicon target to provide a power density in the range of from about 7 watts per square inch to about 22 watts per square inch to sputter an amorphous silicon hydride onto the substrate, the dihydride bond density decreasing with an increase in the rf power density. Substantially pure monohydride films may be produced.
Download or read book Effects of Annealing on the Structural Properties of R F Sputtered Amorphous Silicon Carbide Films written by Tiong Yew Ong and published by . This book was released on 1998 with total page 296 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Preparation and Characterization of Reactive RF Sputtered Nitride Thin Films written by Geok Loo Chen and published by . This book was released on 1999 with total page 226 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Effects of RF Power and Annealing on the Properties of RF Sputtered Amorphous Silicon Carbide Films written by Nyok Boon Chong and published by . This book was released on 2000 with total page 242 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Preparation and Characterisation of RF sputtered Bismuth Oxide Thin Films written by Lois Sara Tovey and published by . This book was released on 1989 with total page 398 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Preparation and Characterization of Hydrogenated Amorphous silicon Films Produced by Ion Plating and Hydrogenated Amorphous boron Films Produced by Glow Discharge Decomposition written by Franklin H. Cocks and published by . This book was released on 1981 with total page 60 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Preparation and Characterization of Hydrogenated Amorphous Silicon Films Produced by Ion Plating and Hydrogenated Amorphous Boron Films Produced by Glow Discharge Decomposition written by and published by . This book was released on 1981 with total page 60 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Amorphous Silicon Carbide Thin Films written by Mariana Amorim Fraga and published by . This book was released on 2011 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon carbide (SiC) has been described as a suitable semiconductor material to use in MEMS and electronic devices for harsh environments. In recent years, many developments in SiC technology as bulk growth, materials processing, electronic devices and sensors have been shown. Moreover, some studies show the synthesis, characterisation and processing of crystalline SiC films. However, few works have investigated the potential of amorphous silicon carbide (a-SiC) thin films for sensors applications. This book presents fundamentals of amorphous silicon carbide thin films and their applications in piezoresistive sensors for high temperature applications.
Download or read book The Preparation Characterization and Tribological Study of RF Sputtered Thin Films for Magnetic Memory Disk written by Chengyea Leu and published by . This book was released on 1987 with total page 638 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Preparation and Physical Properties of Hydrogenated Amorphous Silicon Thin Films written by Gregory N. Parsons and published by . This book was released on 1989 with total page 384 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Oxidation Studies of Hydrogenated Amorphous Silicon Carbide Films written by Liang Pao Lee and published by . This book was released on 2001 with total page 186 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Silicon Based Material and Devices Two Volume Set written by Hari Singh Nalwa and published by Academic Press. This book was released on 2001-06-13 with total page 646 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book covers a broad spectrum of the silicon-based materials and their device applications. This book provides a broad coverage of the silicon-based materials including different kinds of silicon-related materials, their processing, spectroscopic characterization, physical properties, and device applications. This two-volume set offers a selection of timely topics on silicon materials namely those that have been extensively used for applications in electronic and photonic technologies. The extensive reference provides broad coverage of silicon-based materials, including different types of silicon-related materials, their processing, spectroscopic characterization, physical properties, and device applications. Fourteen chapters review the state of the art research on silicon-based materials and their applications to devices. This reference contains a subset of articles published in AP's recently released Handbook of Advanced Electronic and Photonic Materials and Devices ( 2000, ISBN 012-5137451, ten volumes) by Dr. Hari Nalwa. This two-volume work strives to present a highly coherent coverage of silicon-based material uses in the vastly dynamic arena of silicon chip research and technology. Key Features * Covers silicon-based materials and devices * Include types of materials, their processing, fabrication, physical properties and device applications * Role of silicon-based materials in electronic and photonic technology * A very special topic presented in a timely manner and in a format
