Download or read book Preconditioned Iterative Methods for the Numerical Solution of the Stationary Semiconductor Device Equations written by Sean P. Mulligan and published by . This book was released on 1992 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Numerical Methods for the Solution of the Stationary Semiconductor Device Equations in Two and Three Dimensions written by Song Wang and published by . This book was released on 1989 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Performance Issues for Iterative Solvers in Device Simulation written by Research Institute for Advanced Computer Science (U.S.) and published by . This book was released on 1994 with total page 26 pages. Available in PDF, EPUB and Kindle. Book excerpt: Abstract: "Due to memory limitations, iterative methods have become the method of choice for large scale semiconductor device simulation. However, it is well known that these methods still suffer from reliability problems. The linear systems which appear in numerical simulation of semiconductor devices are notoriously ill-conditioned. In order to produce robust algorithms for practical problems, careful attention must be given to many implementation issues. This paper concentrates on strategies for developing robust preconditioners. In addition, effective data structures and convergence check issues are also discussed. These algorithms are compared with a standard direct sparse matrix solver on a variety of problems."
Download or read book Mathematical Modelling and Simulation of Electrical Circuits and Semiconductor Devices written by R. Bank and published by Birkhäuser. This book was released on 2013-11-22 with total page 298 pages. Available in PDF, EPUB and Kindle. Book excerpt: Numerical simulation and modelling of electric circuits and semiconductor devices are of primal interest in today's high technology industries. At the Oberwolfach Conference more than forty scientists from around the world, in cluding applied mathematicians and electrical engineers from industry and universities, presented new results in this area of growing importance. The contributions to this conference are presented in these proceedings. They include contributions on special topics of current interest in circuit and device simulation, as well as contributions that present an overview of the field. In the semiconductor area special lectures were given on mixed finite element methods and iterative procedures for the solution of large linear systems. For three dimensional models new discretization procedures including software packages were presented. Con nections between semiconductor equations and the Boltzmann equation were shown as well as relations to the quantum transport equation. Other issues discussed in this area include the design of simulation programs for semiconductors, vectorcomputers, and interface problems in several dimensions. Topics discussed in the area of circuit simulation include the index classification of differential-algebraic systems, connections with ill-posed problems, and regularization techniques. Split discretization procedures were given for the efficient calculation of periodic solutions of circuits taking into acount the latency. Homotopy methods and new numerical techniques for differential-algebraic systems were presented, and im provements of special numerical methods for standard software packages were sug gested. The editors VII Table of Contents Circuit Simulation Merten K.
Download or read book Various Iterative Methods for the Solution of the Steady state Basic Semiconductor Device Equations written by Markus Clemens and published by . This book was released on 1994 with total page 198 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book SIAM Journal on Scientific and Statistical Computing written by Society for Industrial and Applied Mathematics and published by . This book was released on 1992 with total page 888 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Mathematical Modelling and Simulation of Electric Circuits and Semiconductor Devices written by Randolph E. Bank and published by . This book was released on 1990 with total page 324 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Numerical Simulation of Semiconductor Devices written by Sumantri Slamet and published by . This book was released on 1981 with total page 64 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book High Performance Computing written by Constantine Polychronopoulos and published by Springer Science & Business Media. This book was released on 1999-05-12 with total page 428 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book constitutes the refereed proceedings of the Second International Symposium on High-Performance Computing, ISHPC'99, held in Kyoto, Japan in May 1999. The 23 revised full papers presented were carefully selected from a total of 61 submissions. Also included are the abstracts of several invited talks and 12 reviewed short papers corresponding to the poster presentations given at the symposium. The papers address many current issues in high-performance computing and communication, regarding hardware and network architectures as well as regarding software and theoretical foundations; also advanced applications are studied in a variety of fields including modeling, visualisation, and computational science.
Download or read book Mathematical Reviews written by and published by . This book was released on 2005 with total page 1852 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Application of Iterative Methods for Solving Nonsymmetric Linear Systems in the Simulation of Semiconductor Processing written by Werner Schmid and published by . This book was released on 1993 with total page 28 pages. Available in PDF, EPUB and Kindle. Book excerpt: Abstract: "This paper presents a systematic comparison of recently developed iterative methods for solving nonsymmetric linear equations arising from the numerical simulation of semiconductor processing. A non comprehensive survey of the literature concerning iterative solvers is given including theoretical studies as well as current articles on practical applications. In particular, we consider the conjugate gradient-type algorithms CGS, Bi-CGSTAB and GMRES as well as the Broyden type secant method GB specially adapted to the linear case. At the moment these methods are among the most frequently applied techniques for the solution of nonsymmetric linear systems. The algorithms, including ILU-D (incomplete LU-diagonal decomposition) as a preconditioner, are given and their performance is compared on an industrial application within the process simulator MIMAS II. The simulation of semiconductor processing is an important and challenging area of industrial application and therefore an ideal field for testing the performance of iterative methods in real life problems. To highlight the physical background of this application, the physics of process simulation is briefly sketched."
Download or read book Index to Theses with Abstracts Accepted for Higher Degrees by the Universities of Great Britain and Ireland and the Council for National Academic Awards written by and published by . This book was released on 1995 with total page 1200 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Implications of Analytical Investigations about the Semiconductor Equations on Device Modeling Programs written by Ch Ringhofer and published by . This book was released on 1983 with total page 54 pages. Available in PDF, EPUB and Kindle. Book excerpt: This paper gives guidelines for the development of computer programs for the numerical simulation of semiconductor devices. For this purpose the basic mathematical results on the corresponding elliptic boundary value problem are reviewed. In particular, existence, smoothness and structure of the solutions of the fundamental semiconductor equations are discussed. Various feasible approaches to the numerical solution of the semiconductor equations are described. Much emphasis is placed on constructive remarks to help authors of device simulation programs to make decisions on their code design problems. In particular, criteria for an optimal mesh generation strategy are given. The iterative solution of the systems of nonlinear and linear equations obtained by discretising the semiconductor equations is discussed. An example is given showing the power of these concepts combined with modern numerical methods in comparison to classical approaches. (Author).
Download or read book Numerical Methods for the Wigner Poisson Equations written by and published by . This book was released on 2004 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: This thesis applies modern numerical methods to solve the Wigner-Poisson equations for simulating quantum mechanical electron transport in nanoscale semiconductor devices, in particular, a resonant tunneling diode (RTD). The goal of this dissertation is to provide engineers with a simulation tool that will verify earlier numerical results as well as improve upon the computational efficiency and resolution of older simulations. Iterative methods are applied to the linear and nonlinear problems in these simulations to reduce the computational memory and time required to calculate solutions. Initially the focus of the research involved updating time-integration techniques, but this switched to implementing continuation methods for finding steady-state solutions to the equations as the applied voltage drop across the device varied. This method requires the solution to eigenvalue problems to produce information on the RTD's time-dependent behavior such as the development of current oscillation at a particular applied voltage drop. The continuation algorithms/eigensolving capabilities were provided by Sandia National Laboratories' software library LOCA (Library of Continuation Algorithms). The RTD simulator was parallelized, and a preconditioner was developed to speed-up the iterative linear solver. This allowed us to use finer computational meshes to fully resolve the physics. We also theoretically analyze the steady-state solutions of the Wigner-Poisson equations by noting that the solutions to the steady-state problems are also solutions to a fixed point problem. By analyzing the fixed point map, we are able to prove some regularity of the steady-state solutions as well provide a theoretical explanation for the mesh-independence of the preconditioned linear solver.
Download or read book EDA for IC Implementation Circuit Design and Process Technology written by Luciano Lavagno and published by CRC Press. This book was released on 2018-10-03 with total page 762 pages. Available in PDF, EPUB and Kindle. Book excerpt: Presenting a comprehensive overview of the design automation algorithms, tools, and methodologies used to design integrated circuits, the Electronic Design Automation for Integrated Circuits Handbook is available in two volumes. The second volume, EDA for IC Implementation, Circuit Design, and Process Technology, thoroughly examines real-time logic to GDSII (a file format used to transfer data of semiconductor physical layout), analog/mixed signal design, physical verification, and technology CAD (TCAD). Chapters contributed by leading experts authoritatively discuss design for manufacturability at the nanoscale, power supply network design and analysis, design modeling, and much more. Save on the complete set.
Download or read book Numerical Methods for Transient Semiconductor Device Modelling written by C. Ringhofer and published by . This book was released on 1983 with total page 39 pages. Available in PDF, EPUB and Kindle. Book excerpt: A mixed system of parabolic and elliptic partial differential equations is used to describe the carrier transport and potential distribution in semi-conductor devices such as MOSFETs, diodes, etc. A singular perturbation analysis of the corresponding initial boundary value problem is carried out. Asymptotic expansions of the solution in powers of the minimal Debeye length are given. Based on this analysis a finite difference method for the numerical solution of these problems is developed. Here problems arise due to different time scales which are intrinsically present in the analytical problem. These different time scales do not occur in the physical solutions because of special (equilibrium- ) initial conditions. Nevertheless they cause severe stability problems for finite difference methods. An unconditionally stable scheme is developed which minimizes computational effort. Numerical experiments on a test problem in one space dimension are presented. (Author).
Download or read book NASECODE III Proceedings of the International Conference on the Numerical Analysis of Semiconductor Devices and Integrated Circuits 3rd Held in Galway Ireland on 15 17 June 1983 written by J. J. H. Miller and published by . This book was released on 1983 with total page 298 pages. Available in PDF, EPUB and Kindle. Book excerpt: Partial Contents: LSI layout verification system using circuit simulation programs; Application of numerical simulation in the modeling of I.C. device structures; Discretization methods for the semiconductor equations; Two-dimensional numerical analysis of doping processes; Submicron device simulation; A singular perturbation analysis of discretisation methods for the parabolic semicondutor device equations; Two-dimensional analysis of the back region of I.B.C. silicon solar cells; Two dimensional simulation of VLSI processes: a solution using finite element method; The influence of various mobility models on the iteration process and solution of the basic semiconductor equations; Surface and bulk-dominaTED PUNCH-through in short-channel MOSFETS; Adaptation of stiff methods to simulation of impurity diffusion in semiconductors; Application of parabolic partial differential equations to semiconductor device modeling; Calculation of quasi-static device behavior with small computational burden; Modeling the body effect of a short channel MOSFET. Steady state numerical analysis of single carrier two dimensional semiconductor devices using the control area approximation; Carrier mobility at interfaces; Nonstatic modeling of submicron transistors; Numerical solutions of the electrical properties of GaAs/Al1-x GaxAs superlattices and heterojunctions; An accurate 2-d simulation program of MOS transistors using the finite element method, and interfaced to other process simulation programs; Numerical simulation of the phase memory in nonlinear active media with diffusion; Finite element modelling of junction terminations in reverse-biased semiconductor devices.
