Download or read book Pre amorphization Damage in Ion implanted Silicon written by Robert Jan Schreutelkamp and published by . This book was released on 1991 with total page 92 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book The Formation of Amorphous Silicon by Light Ion Damage written by Yih-Cheng Shih and published by . This book was released on 1986 with total page 298 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Ion Implantation Induced Defect Formation and Amorphization in the Group IV Semiconductors written by Diane P. Hickey and published by . This book was released on 2007 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Damage in Si and Ge was produced by Si implantation at 40 keV to a dose of 1 x 1014 cm−2 and 1 x 1015 cm−2, and amorphizing damage in diamond was produced by Si implantation at 1 MeV to a dose of 3 and 7 x 1015 cm−2. All implants were carried out at room temperature. For non-amorphizing implants (1014 Si+ cm−2) into Ge, dot-like defects formed immediately upon implantation and were stable up to temperatures of 650 °C. The activation energy of these defects was determined to be approximately 0.2 " 0.1 eV. For amorphizing implants (1015 Si+ cm−2) into Ge and upon solid-phase epitaxial regrowth, the same types of defects seen in Si were also seen in Ge. However, in Ge, the end-of-range defects were the least stable, dissolving at temperatures around 650 °C. The activation energy for the dissolution of end-of-range defects in Ge is approximately 0.4 " 0.1 eV. For diamond, non-amorphizing Si+ implantation (

Download or read book Defects in Ion Implanted Silicon Investigated by Transmission Electron Microscopy written by Kevin Scott Jones and published by . This book was released on 1987 with total page 292 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Ion Implantation Technology 94 written by S. Coffa and published by Newnes. This book was released on 1995-05-16 with total page 1031 pages. Available in PDF, EPUB and Kindle. Book excerpt: The aim of these proceedings is to present and stimulate discussion on the many subjects related to ion implantation among a broad mix of specialists from areas as diverse as materials science, device production and advanced ion implanters.The contents open with a paper on the future developments of the microelectronics industry in Europe within the framework of the global competition. The subsequent invited and oral presentations cover in detail the following areas: trends in processing and devices, ion-solid interaction, materials science issues, advanced implanter systms, process control and yield, future trends and applications.

Download or read book A Study of the Amorphization of Silicon by Ion Implantation written by John Robert Dennis and published by . This book was released on 1976 with total page 125 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Amorphization Threshold in Si implanted Strained SiGe Alloy Layers written by and published by . This book was released on 1994 with total page 7 pages. Available in PDF, EPUB and Kindle. Book excerpt: The authors have examined the damage produced by Si-ion implantation into strained Si{sub 1-x}Ge(subscript x) epilayers. Damage accumulation in the implanted layers was monitored in situ by time-resolved reflectivity and measured by ion channeling techniques to determine the amorphization threshold in strained Si{sub 1-x}Ge(subscript x) (x = 0.16 and 0.29) over the temperature range 30--110 C. The results are compared with previously reported measurements on unstrained Si{sub 1-x}Ge(subscript x), and with the simple model used to describe those results. They report here data which lend support to this model and which indicate that pre-existing strain does not enhance damage accumulation in the alloy layer.

Download or read book Amorphization and the Effect of Implanted Ions in SiC written by and published by . This book was released on 1994 with total page 7 pages. Available in PDF, EPUB and Kindle. Book excerpt: The effects of implanted ion chemistry and displacement damage on the amorphization threshold dose of SiC were studied using cross-section transmission electron microscopy. Room temperature as well as 200 and 400 C irradiations were carried out with 3.6 MeV Fe, 1.8 MeV Cl, 1 MeV He or 0.56 MeV Si ions. The room temperature amorphization threshold dose in irradiated regions well separated from the implanted ions was found to range from 0.3 to 0.5 dpa for the four different ion species. The threshold dose for amorphization in the He, Si and Fe ion-implanted regions was also (approximately)0.3 to 0.5 dpa. On the other hand, the amorphization threshold in the Cl-implanted region was only about 0.1 dpa. The volume change associated with amorphization was (approximately)17%. No evidence for amorphization was obtained in specimens irradiated at 200 or 400 C. An understanding of the microstructural evolution of SiC under irradiation is critical to the application of these materials in fusion energy systems.

Download or read book Defects in Microelectronic Materials and Devices written by Daniel M. Fleetwood and published by CRC Press. This book was released on 2008-11-19 with total page 772 pages. Available in PDF, EPUB and Kindle. Book excerpt: Uncover the Defects that Compromise Performance and ReliabilityAs microelectronics features and devices become smaller and more complex, it is critical that engineers and technologists completely understand how components can be damaged during the increasingly complicated fabrication processes required to produce them.A comprehensive survey of defe

Download or read book High Energy and High Dose Ion Implantation written by S.U. Campisano and published by Elsevier. This book was released on 1992-06-16 with total page 320 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ion beam processing is a means of producing both novel materials and structures. The contributions in this volume strongly focus on this aspect and include many papers reporting on the modification of the electrical and structural properties of the target materials, both metals and semiconductors, as well as the synthesis of buried and surface compound layers. Many examples on the applications of high energy and high dose ion implantation are also given. All of the papers from Symposia C and D are presented in this single volume because the interests of many of the participants span both topics. Additionally many of the materials science aspects, including experimental methods, equipment and processing problems, diagnostic and analytical techniques are common to both symposia.

Download or read book Formation of Amorphous Silicon by Light Ion Damage written by and published by . This book was released on 1985 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Amorphization by implantation of boron ions (which is the lightest element generally used in I.C. fabrication processes) has been systematically studied for various temperatures, various voltages and various dose rates. Based on theoretical considerations and experimental results, a new amorphization model for light and intermediate mass ion damage is proposed consisting of two stages. The role of interstitial type point defects or clusters in amorphization is emphasized. Due to the higher mobility of interstitials out-diffusion to the surface particularly during amorphization with low energy can be significant. From a review of the idealized amorphous structure, diinterstitial-divacancy pairs are suggested to be the embryos of amorphous zones formed during room temperature implantation. The stacking fault loops found in specimens implanted with boron at room temperature are considered to be the origin of secondary defects formed during annealing.

Download or read book Crucial Issues in Semiconductor Materials and Processing Technologies written by S. Coffa and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 523 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductors lie at the heart of some of the most important industries and technologies of the twentieth century. The complexity of silicon integrated circuits is increasing considerably because of the continuous dimensional shrinkage to improve efficiency and functionality. This evolution in design rules poses real challenges for the materials scientists and processing engineers. Materials, defects and processing now have to be understood in their totality. World experts discuss, in this volume, the crucial issues facing lithography, ion implication and plasma processing, metallization and insulating layer quality, and crystal growth. Particular emphasis is placed upon silicon, but compound semiconductors and photonic materials are also highlighted. The fundamental concepts of phase stability, interfaces and defects play a key role in understanding these crucial issues. These concepts are reviewed in a crucial fashion.

Download or read book Mechanisms for Amorphous State Formation in Ion Implanted Silicon written by Edward B. Hale and published by . This book was released on 1978 with total page 8 pages. Available in PDF, EPUB and Kindle. Book excerpt: A summary is given of the results obtained on this grant. Various experiments were performed to better understand the mechanisms which are important to the crystalline to amorphous transformation produced by ion implantation. From these experiments have emerged several important concepts and processes. These have been reported in several publications and talks, and it has been possible to interpret the results in terms of a composite model for the amorphization transformation.

Download or read book Engineering of Damage in Ion Implanted Silicon written by Jan Reinder Liefting and published by . This book was released on 1992 with total page 104 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Ion Implantation and Synthesis of Materials written by Michael Nastasi and published by Springer Science & Business Media. This book was released on 2007-05-16 with total page 271 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ion implantation is one of the key processing steps in silicon integrated circuit technology. Some integrated circuits require up to 17 implantation steps and circuits are seldom processed with less than 10 implantation steps. Controlled doping at controlled depths is an essential feature of implantation. Ion beam processing can also be used to improve corrosion resistance, to harden surfaces, to reduce wear and, in general, to improve materials properties. This book presents the physics and materials science of ion implantation and ion beam modification of materials. It covers ion-solid interactions used to predict ion ranges, ion straggling and lattice disorder. Also treated are shallow-junction formation and slicing silicon with hydrogen ion beams. Topics important for materials modification, such as ion-beam mixing, stresses, and sputtering, are also described.

Download or read book Silicon on insulator Technology and Devices XII written by George K. Celler and published by The Electrochemical Society. This book was released on 2005 with total page 412 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Device Implications of Ion Implantation Damage in Silicon written by D. Eirug Davies and published by . This book was released on 1973 with total page 7 pages. Available in PDF, EPUB and Kindle. Book excerpt: Thermal stimulated current and diode recovery measurements are presented for ion implanted silicon. The results are used to evaluate device possibilities such as bipolar transistors and hyperabrupt diodes where control of implantation damage is critical. (Author).