Download or read book Dynamic Power Characteristics of Selective Buried Oxide SELBOX MOSFET written by Rana Mahmoud and published by . This book was released on 2017 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: "The ever-increasing number of devices and electronic systems resulted in increasing the die size to satisfy the increasing demand. Moreover, the shrinking size of transistors according to the scaling theory became a contributor to increasing the leakage current. Many efforts have been made to reduce power dissipation by introducing new circuit designs and new device architectures, which is the main scope of this thesis, such as the Silicon-On-Insulator (SOI) and the Selective Buried Oxide (SELBOX) structures. The bulk Metal-Oxide-Semiconductor Field-Effect-Transistor (MOSFET) structure has relatively high power dissipation, in addition to its poor frequency response due to its internal capacitances. As a result, SOI MOSFET has been introduced as an alternative to the bulk MOSFET to minimize power dissipation as well as to tackle the existing problems of the bulk MOSFET. The SOI MOSFET transistor active region is isolated from the substrate and hence device parasitic capacitances are reduced resulting in a faster operation and lower leakage power dissipation. Unfortunately, results showed that the fully-depleted SOI (FD-SOI) and partially-depleted SOI (PD-SOI) suffer from self-heating effect and the PD-SOI has the kink effect problem. Therefore, the concerns towards fabricating a new device that combines the advantages of the bulk and SOI MOSFETs and eliminating their drawbacks have been raised again. The proposed device is called the SELBOX MOSFET and has structural features identical to SOI MOSFET structure with the only difference which is the gap in the isolation layer. Our results showed that the existing gap in the BOX layer has eliminated the self-heating and the kink effects which are the major drawbacks of the SOI MOSFET. The main objective of this thesis is to investigate the dynamic power dissipation of the CMOS SELBOX structure and compare it with that of the CMOS bulk and SOI structures. The devices’ fabrication simulation have been conducted using Silvaco TCAD tools. The simulation results show that the dynamic power dissipation of the CMOS bulk, SOI and SELBOX are almost the same at high frequencies. However, at low frequencies, the dynamic power dissipation of the CMOS bulk is the highest and that of CMOS SOI and SELBOX is very close."--Abstract.
Download or read book Power Characteristics of Selective Buried Oxide MOSFET written by Dana Tariq Younis and published by . This book was released on 2016 with total page 95 pages. Available in PDF, EPUB and Kindle. Book excerpt: "Power dissipation is an important factor in electronic circuit design due to the decreasing feature size of microelectronic devices, high clock frequencies, and large die size, as well as the growing number of mobile, battery-operated systems. The aim of low-power design for battery-powered devices is thus to increase battery service life while meeting performance requirements. Reducing power dissipation is a design goal for portable and non-portable devices since extreme power dissipation results in increased packaging and cooling costs as well as potential reliability problems. Recently, Silicon On Insulator (SOI) devices have been used that exhibit vertical and horizontal isolation of active devices from the substrate, which leads to higher speed operation and low leakage current. However, SOI devices have serious drawbacks such as the kink effect and self-heating. In this thesis, a new Metal-Oxide Semiconductor Field-Effect-Transistor (MOSFET) structure design is introduced to eliminate the kink effect and self-heating, and to reduce power dissipation while still keeping in consideration the advantages of others such as Bulk and SOI MOSFETs. The new structure is called SELective Buried OXide MOSFET (SELBOX). This transistor combines the advantages of the Bulk and SOI while eliminating the drawbacks. This thesis reviews the various power dissipation reduction methods available in the literature. Next it proposes the structures of Bulk, SOI, and SELBOX for NMOS, PMOS, and CMOS over the first stage followed by a simulation to obtain current-voltage characteristics and static power dissipation. The various MOSFET structures are evaluated in terms of power dissipation. Simulation results will show that the static power dissipation of the Bulk MOS as a single transistor is less than others due to the slow increase in the drain current. Also, SELBOX behavior is very close to Bulk with the advantages of SOI. Simulation results of the CMOS devices show that the static power dissipation of Bulk MOS is very high due to well leakage. SOI has the lowest power dissipation and SELBOX is very close to it. In all cases, SELBOX structure succeeded in reducing power dissipation with a high operating speed, elimination of self-heating, and without a kink effect."--Abstract.
Download or read book Effects of Buried Oxide Charges on Front Channel Characteristics in FD SOI MOSFET s written by Xuejun Zhao and published by . This book was released on 1997 with total page 134 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Design of Advanced Low power Sub quarter Micron Metal Oxide Semiconductor Field Effect Transistors MOSFET written by Weize Xiong and published by . This book was released on 2001 with total page 236 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Intelligent Communication Control and Devices written by Rajesh Singh and published by Springer. This book was released on 2018-04-10 with total page 1729 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book focuses on the integration of intelligent communication systems, control systems, and devices related to all aspects of engineering and sciences. It contains high-quality research papers presented at the 2nd international conference, ICICCD 2017, organized by the Department of Electronics, Instrumentation and Control Engineering of University of Petroleum and Energy Studies, Dehradun on 15 and 16 April, 2017. The volume broadly covers recent advances of intelligent communication, intelligent control and intelligent devices. The work presented in this book is original research work, findings and practical development experiences of researchers, academicians, scientists and industrial practitioners.
Download or read book Silicon on insulator Technology and Devices XII written by George K. Celler and published by The Electrochemical Society. This book was released on 2005 with total page 412 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Silicon on insulator Technology and Devices 13 written by George K. Celler and published by The Electrochemical Society. This book was released on 2007 with total page 409 pages. Available in PDF, EPUB and Kindle. Book excerpt: This issue of ESC Transactions covers recent significant advances in SOI technologies. It will be of interest to materials and device scientists, as well as to process and applications oriented engineers. Several keynote papers introduce and review the main topics. This is followed by contributed papers covering the latest research and implementation results.
Download or read book Nanoelectronic Devices and Applications written by Trupti Ranjan Lenka and published by Bentham Science Publishers. This book was released on 2024-07-02 with total page 358 pages. Available in PDF, EPUB and Kindle. Book excerpt: Nanoelectronic Devices and Applications presents reviews on recent advances in nanoelectronic device design and new directions for their practical use. The volume includes 16 edited chapters that cover novel material systems, band engineering, modelling and simulations, fabrication and characterization techniques, and their emerging applications. The discussions presented in this book are based on current understandings on innovations and future trends, and references are provided for advanced scholars. Chapter 1 presents an overview of recent innovations and future prospects in III-nitride semiconductor technologies for RF, power, digital and quantum applications. Chapter 2 reports new trends in GaN-based optical devices for sensing and micro-display applications. Chapter 3 shows current interests in nanophosphors and their utilizations in improving device performance of InGaN nanowire light-emitting diodes (LEDs). Recent studies on the effect of potential profile on the carrier transport in AlGaAs based double quantum well structures and their applications are presented in Chapter 4. The recent progress in high-electron-mobility transistors (HEMTs) is presented through Chapters 5, 6, and 7. A comprehensive review on β-Ga2O3 emphasizing material properties, growth approaches, and its applications for next-generation high-power nanoelectronics; the effect of dielectric layers on the characteristics of AlN/β-Ga2O3 HEMTs are presented in Chapter 8 and 9 respectively. Chapters 10-14 summarize the recent studies in field-effect transistors (FETs) adopting different materials and structures. Chapter 15 presents current research in 2D Tungsten Diselenide (WSe2) with special focus on the material properties, device structures, applications, and challenges. Finally, Chapter 16 presents a systematic review of memristors, and memristive semiconductor devices. The book is intended as a primary resource for elective subjects in advanced electronics and computer engineering courses at university level. Researchers and industry professionals will also learn about emerging trends and state-of-the-art research in nanoelectronics.
Download or read book NEC Research Development written by and published by . This book was released on 1997 with total page 1084 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Microcircuit Reliability Bibliography written by and published by . This book was released on 1974 with total page 888 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Chemical Abstracts written by and published by . This book was released on 2002 with total page 2540 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Functional Nanomaterials and Devices for Electronics Sensors and Energy Harvesting written by Alexei Nazarov and published by Springer. This book was released on 2014-08-28 with total page 464 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book contains reviews of recent experimental and theoretical results related to nanomaterials. It focuses on novel functional materials and nanostructures in combination with silicon on insulator (SOI) devices, as well as on the physics of new devices and sensors, nanostructured materials and nano scaled device characterization. Special attention is paid to fabrication and properties of modern low-power, high-performance, miniaturized, portable sensors in a wide range of applications such as telecommunications, radiation control, biomedical instrumentation and chemical analysis. In this book, new approaches exploiting nanotechnologies (such as UTBB FD SOI, Fin FETs, nanowires, graphene or carbon nanotubes on dielectric) to pave a way between “More Moore” and “More than Moore” are considered, in order to create different kinds of sensors and devices which will consume less electrical power, be more portable and totally compatible with modern microelectronics products.
Download or read book Nanoscale CMOS written by Francis Balestra and published by John Wiley & Sons. This book was released on 2013-03-01 with total page 518 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides a comprehensive review of the state-of-the-art in the development of new and innovative materials, and of advanced modeling and characterization methods for nanoscale CMOS devices. Leading global industry bodies including the International Technology Roadmap for Semiconductors (ITRS) have created a forecast of performance improvements that will be delivered in the foreseeable future – in the form of a roadmap that will lead to a substantial enlargement in the number of materials, technologies and device architectures used in CMOS devices. This book addresses the field of materials development, which has been the subject of a major research drive aimed at finding new ways to enhance the performance of semiconductor technologies. It covers three areas that will each have a dramatic impact on the development of future CMOS devices: global and local strained and alternative materials for high speed channels on bulk substrate and insulator; very low access resistance; and various high dielectric constant gate stacks for power scaling. The book also provides information on the most appropriate modeling and simulation methods for electrical properties of advanced MOSFETs, including ballistic transport, gate leakage, atomistic simulation, and compact models for single and multi-gate devices, nanowire and carbon-based FETs. Finally, the book presents an in-depth investigation of the main nanocharacterization techniques that can be used for an accurate determination of transport parameters, interface defects, channel strain as well as RF properties, including capacitance-conductance, improved split C-V, magnetoresistance, charge pumping, low frequency noise, and Raman spectroscopy.
Download or read book Electrical Characterization of Silicon on Insulator Materials and Devices written by Sorin Cristoloveanu and published by Springer Science & Business Media. This book was released on 1995-06-30 with total page 414 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon on Insulator is more than a technology, more than a job, and more than a venture in microelectronics; it is something different and refreshing in device physics. This book recalls the activity and enthu siasm of our SOl groups. Many contributing students have since then disappeared from the SOl horizon. Some of them believed that SOl was the great love of their scientific lives; others just considered SOl as a fantastic LEGO game for adults. We thank them all for kindly letting us imagine that we were guiding them. This book was very necessary to many people. SOl engineers will certainly be happy: indeed, if the performance of their SOl components is not always outstanding, they can now safely incriminate the relations given in the book rather than their process. Martine, Gunter, and Y. S. Chang can contemplate at last the amount of work they did with the figures. Our SOl accomplices already know how much we borrowed from their expertise and would find it indecent to have their detailed contri butions listed. Jean-Pierre and Dimitris incited the book, while sharing their experience in the reliability of floating bodies. Our families and friends now realize the SOl capability of dielectrically isolating us for about two years in a BOX. Our kids encouraged us to start writing. Our wives definitely gave us the courage to stop writing. They had a hard time fighting the symptoms of a rapidly developing SOl allergy.
Download or read book 21st Century Nanostructured Materials written by Phuong Pham and published by BoD – Books on Demand. This book was released on 2022-04-20 with total page 390 pages. Available in PDF, EPUB and Kindle. Book excerpt: Nanostructured materials (NMs) are attracting interest as low-dimensional materials in the high-tech era of the 21st century. Recently, nanomaterials have experienced breakthroughs in synthesis and industrial and biomedical applications. This book presents recent achievements related to NMs such as graphene, carbon nanotubes, plasmonic materials, metal nanowires, metal oxides, nanoparticles, metamaterials, nanofibers, and nanocomposites, along with their physical and chemical aspects. Additionally, the book discusses the potential uses of these nanomaterials in photodetectors, transistors, quantum technology, chemical sensors, energy storage, silk fibroin, composites, drug delivery, tissue engineering, and sustainable agriculture and environmental applications.
Download or read book Japanese Journal of Applied Physics written by and published by . This book was released on 2006 with total page 1912 pages. Available in PDF, EPUB and Kindle. Book excerpt:
