Download or read book Point Defect Mediated Dopant Diffusion in Silicon written by Sung Tae Ahn and published by . This book was released on 1988 with total page 268 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Intrinsic Point Defects Impurities and Their Diffusion in Silicon written by Peter Pichler and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 576 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book contains the first comprehensive review of intrinsic point defects, impurities and their complexes in silicon. Besides compiling the structures, energetic properties, identified electrical levels and spectroscopic signatures, and the diffusion behaviour from investigations, it gives a comprehensive introduction into the relevant fundamental concepts.
Download or read book Point Defects and Dopant Diffusion in Silicon written by Paul Martin Fahey and published by . This book was released on 1995 with total page 224 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Point Defect Diffusion and Dopant defect Interactions in Silicon 100 Doping Superlattices written by Toshiharu Kiheipua Mogi and published by . This book was released on 1996 with total page 432 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Point Defect dopant Diffusion Considerations Following Preamorphization of Silicon Via Si and Ge Implantation written by A. C. Ajmera and published by . This book was released on 1987 with total page 7 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Charged Semiconductor Defects written by Edmund G. Seebauer and published by Springer Science & Business Media. This book was released on 2008-11-14 with total page 304 pages. Available in PDF, EPUB and Kindle. Book excerpt: Defects in semiconductors have been studied for many years, in many cases with a view toward controlling their behaviour through various forms of “defect engineering”. For example, in the bulk, charging significantly affects the total concentration of defects that are available to mediate phenomena such as solid-state diffusion. Surface defects play an important role in mediating surface mass transport during high temperature processing steps such as epitaxial film deposition, diffusional smoothing in reflow, and nanostructure formation in memory device fabrication. “Charged Defects in Semiconductors” details the current state of knowledge regarding the properties of the ionized defects that can affect the behaviour of advanced transistors, photo-active devices, catalysts, and sensors. Features: group IV, III-V, and oxide semiconductors; intrinsic and extrinsic defects; and, point defects, as well as defect pairs, complexes and clusters.
Download or read book Dopants and Defects in Semiconductors written by Matthew D. McCluskey and published by CRC Press. This book was released on 2018-02-19 with total page 373 pages. Available in PDF, EPUB and Kindle. Book excerpt: Praise for the First Edition "The book goes beyond the usual textbook in that it provides more specific examples of real-world defect physics ... an easy reading, broad introductory overview of the field" ―Materials Today "... well written, with clear, lucid explanations ..." ―Chemistry World This revised edition provides the most complete, up-to-date coverage of the fundamental knowledge of semiconductors, including a new chapter that expands on the latest technology and applications of semiconductors. In addition to inclusion of additional chapter problems and worked examples, it provides more detail on solid-state lighting (LEDs and laser diodes). The authors have achieved a unified overview of dopants and defects, offering a solid foundation for experimental methods and the theory of defects in semiconductors. Matthew D. McCluskey is a professor in the Department of Physics and Astronomy and Materials Science Program at Washington State University (WSU), Pullman, Washington. He received a Physics Ph.D. from the University of California (UC), Berkeley. Eugene E. Haller is a professor emeritus at the University of California, Berkeley, and a member of the National Academy of Engineering. He received a Ph.D. in Solid State and Applied Physics from the University of Basel, Switzerland.
Download or read book Point defect based Two dimensional Modeling of Dislocation Loops and Stress Effects on Dopant Diffusion in Silicon written by Heemyong Park and published by . This book was released on 1993 with total page 290 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Coupled Diffusion Of Impurity Atoms And Point Defects In Silicon Crystals written by Oleg Velichko and published by World Scientific. This book was released on 2019-11-05 with total page 404 pages. Available in PDF, EPUB and Kindle. Book excerpt: This work presents a comprehensive theory describing atomic diffusion in silicon crystals under strong nonequilibrium conditions caused by ion implantation and interaction with the surface or other interfaces. A set of generalized equations that describe diffusion of impurity atoms and point defects are presented in a form suitable for solving numerically. Based on this theory, partial diffusion models are constructed, and the simulation of many doping processes used in microelectronics is carried out.Coupled Diffusion of Impurity Atoms and Point Defects in Silicon Crystals is a useful text for researchers, engineers, and advanced students in semiconductor physics, microelectronics, and nanoelectronics. It helps readers acquire a deep understanding of the physics of diffusion and demonstrates the practical application of the theoretical ideas formulated to find cheaper solutions in the course of manufacturing semiconductor devices and integrated microcircuits.
Download or read book Point Defects in Group IV Semiconductors written by S. Pizzini and published by Materials Research Forum LLC. This book was released on 2017-04-05 with total page 134 pages. Available in PDF, EPUB and Kindle. Book excerpt: A self-consistent model of point defects requires a reliable connection with the experimentally deduced structural, spectroscopic and thermodynamic properties of the defect centres, to allow their unambiguous identification. This book focuses on the properties of defects in group IV semiconductors and seeks to clarify whether full knowledge of their chemical nature can account for several problems encountered in practice. It is shown how difficult the fulfilment of self-consistency conditions can be, even today, after more than four decades of dedicated research work, especially in the case of compound semiconductors, such as SiC, but also in the apparently simple cases of silicon and germanium. The reason for this is that the available microscopic models do not yet account for defect interactions in real solids.
Download or read book Defects and Impurities in Silicon Materials written by Yutaka Yoshida and published by Springer. This book was released on 2016-03-30 with total page 498 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book emphasizes the importance of the fascinating atomistic insights into the defects and the impurities as well as the dynamic behaviors in silicon materials, which have become more directly accessible over the past 20 years. Such progress has been made possible by newly developed experimental methods, first principle theories, and computer simulation techniques. The book is aimed at young researchers, scientists, and technicians in related industries. The main purposes are to provide readers with 1) the basic physics behind defects in silicon materials, 2) the atomistic modeling as well as the characterization techniques related to defects and impurities in silicon materials, and 3) an overview of the wide range of the research fields involved.
Download or read book Silicon Materials Science and Technology written by and published by . This book was released on 1998 with total page 800 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Dopant dopant and Dopant defect Processes Underlying Activation Kinetics written by Ali Mokhberi and published by . This book was released on 2003 with total page 168 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Proceedings of the Second Symposium on Defects in Silicon written by W. Murray Bullis and published by . This book was released on 1991 with total page 716 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Silicon Germanium and Their Alloys written by Gudrun Kissinger and published by CRC Press. This book was released on 2014-12-09 with total page 436 pages. Available in PDF, EPUB and Kindle. Book excerpt: Despite the vast knowledge accumulated on silicon, germanium, and their alloys, these materials still demand research, eminently in view of the improvement of knowledge on silicon–germanium alloys and the potentialities of silicon as a substrate for high-efficiency solar cells and for compound semiconductors and the ongoing development of nanodevices based on nanowires and nanodots. Silicon, Germanium, and Their Alloys: Growth, Defects, Impurities, and Nanocrystals covers the entire spectrum of R&D activities in silicon, germanium, and their alloys, presenting the latest achievements in the field of crystal growth, point defects, extended defects, and impurities of silicon and germanium nanocrystals. World-recognized experts are the authors of the book’s chapters, which span bulk, thin film, and nanostructured materials growth and characterization problems, theoretical modeling, crystal defects, diffusion, and issues of key applicative value, including chemical etching as a defect delineation technique, the spectroscopic analysis of impurities, and the use of devices as tools for the measurement of materials quality.
Download or read book Proceedings of the Fourth International Symposium of Process Physics and Modeling in Semiconductor Technology written by G. R. Srinivasan and published by The Electrochemical Society. This book was released on 1996 with total page 546 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Silicon Materials Science and Technology X written by Howard R. Huff and published by The Electrochemical Society. This book was released on 2006 with total page 599 pages. Available in PDF, EPUB and Kindle. Book excerpt: This was the tenth symposium of the International Symposium on Silcon Material Science and Technology, going back to 1969. This issue provides a unique historical record of the program and will aid in the understanding of silicon materials over the last 35 years.
