Download or read book Point Defect Characterization of Bulk II VI Semiconductors Using Positron Annihilation Spectroscopy written by Grant Tessaro and published by . This book was released on 1998 with total page 91 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Advances in Defect Characterizations of Semiconductors Using Positrons written by and published by . This book was released on 1996 with total page 7 pages. Available in PDF, EPUB and Kindle. Book excerpt: Positron Annihilation Spectroscopy (PAS) is a sensitive probe for studying the electronic structure of defects in solids. The authors summarize recent developments in defect characterization of semiconductors using depth-resolved PAS. The progress achieved in extending the capabilities of the PAS method is also described.
Download or read book Positron Annihilation in Semiconductors written by Reinhard Krause-Rehberg and published by Springer Science & Business Media. This book was released on 1999 with total page 408 pages. Available in PDF, EPUB and Kindle. Book excerpt: This comprehensive book reports on recent investigations of lattice imperfections in semiconductors by means of positron annihilation. It reviews positron techniques, and describes the application of these techniques to various kinds of defects, such as vacancies, impurity vacancy complexes and dislocations.
Download or read book Identification of Defects in Semiconductors written by and published by Academic Press. This book was released on 1998-07-02 with total page 393 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors.The"Willardson and Beer"Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices,Oxygen in Silicon, and others promise indeed that this tradition will be maintained and even expanded.Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry.
Download or read book Positron Spectroscopy of Solids written by Alfredo Dupasquier and published by IOS Press. This book was released on 1995 with total page 830 pages. Available in PDF, EPUB and Kindle. Book excerpt: The lifetime of a positron inside a solid is normally less than a fraction of nanosecond. This is a very short time on a human scale, but is long enough to enable the positron to visit an extended region of the material, and to sense the atomic and electronic structure of the environment. Thus, we can inject a positron in a sample to draw from it some signal giving us information on the microscopic properties of the material. This idea has been successfully developed in a number of positron-based techniques of physical analysis, with resolution in energy, momentum, or position. The complex of these techniques is what we call now positron spectroscopy of solids. The field of application of the positron spectroscopy extends from advanced problems of solid-state physics to industrial applications in the area of characterization of high-tech materials. This volume focuses the attention on the physics that can be learned from positron-based methods, but also frames those methods in a wider context including other experimental approaches. It can be considered as a textbook on positron spectroscopy of solids, the sort of book that the newcomer takes for his approach to this field, but also as a useful research tool for the expert.
Download or read book Proceedings of the Second Symposium on Defects in Silicon written by W. Murray Bullis and published by . This book was released on 1991 with total page 716 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Characterisation and Control of Defects in Semiconductors written by Filip Tuomisto and published by Materials, Circuits and Device. This book was released on 2019-10-27 with total page 601 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides an up-to-date review of the experimental and theoretical methods used for studying defects in semiconductors, this book focuses on recent developments driven by the requirements of new materials, including nitrides, oxide semiconductors and 2-D semiconductors.
Download or read book State of the Art Program on Compound Semiconductors XXXVII SOTAPOCS XXXVII and Narrow Bandgap Optoelectronic Materials and Devices written by P. C. Chang and published by The Electrochemical Society. This book was released on 2002 with total page 344 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Defects in Semiconductors written by and published by Academic Press. This book was released on 2015-06-08 with total page 458 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume, number 91 in the Semiconductor and Semimetals series, focuses on defects in semiconductors. Defects in semiconductors help to explain several phenomena, from diffusion to getter, and to draw theories on materials' behavior in response to electrical or mechanical fields. The volume includes chapters focusing specifically on electron and proton irradiation of silicon, point defects in zinc oxide and gallium nitride, ion implantation defects and shallow junctions in silicon and germanium, and much more. It will help support students and scientists in their experimental and theoretical paths. - Expert contributors - Reviews of the most important recent literature - Clear illustrations - A broad view, including examination of defects in different semiconductors
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1975 with total page 978 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Defects in Semiconductors 17 written by Helmut Heinrich and published by Trans Tech Publications. This book was released on 1994 with total page 444 pages. Available in PDF, EPUB and Kindle. Book excerpt: This comprehensive issue presents 297 papers that cover a broad range of topics in the fundamental science of imperfections in semiconductor materials, including the creation and/or origin, structure, electronic, optical, thermodynamical and chemical properties of defects, often also with strong relevance to technological problems in semiconductor devices.
Download or read book III Nitride Semiconductors written by M.O. Manasreh and published by Elsevier. This book was released on 2000-12-06 with total page 463 pages. Available in PDF, EPUB and Kindle. Book excerpt: Research advances in III-nitride semiconductor materials and device have led to an exponential increase in activity directed towards electronic and optoelectronic applications. There is also great scientific interest in this class of materials because they appear to form the first semiconductor system in which extended defects do not severely affect the optical properties of devices. The volume consists of chapters written by a number of leading researchers in nitride materials and device technology with the emphasis on the dopants incorporations, impurities identifications, defects engineering, defects characterization, ion implantation, irradiation-induced defects, residual stress, structural defects and phonon confinement. This unique volume provides a comprehensive review and introduction of defects and structural properties of GaN and related compounds for newcomers to the field and stimulus to further advances for experienced researchers. Given the current level of interest and research activity directed towards nitride materials and devices, the publication of the volume is particularly timely. Early pioneering work by Pankove and co-workers in the 1970s yielded a metal-insulator-semiconductor GaN light-emitting diode (LED), but the difficulty of producing p-type GaN precluded much further effort. The current level of activity in nitride semiconductors was inspired largely by the results of Akasaki and co-workers and of Nakamura and co-workers in the late 1980s and early 1990s in the development of p-type doping in GaN and the demonstration of nitride-based LEDs at visible wavelengths. These advances were followed by the successful fabrication and commercialization of nitride blue laser diodes by Nakamura et al at Nichia. The chapters contained in this volume constitutes a mere sampling of the broad range of research on nitride semiconductor materials and defect issues currently being pursued in academic, government, and industrial laboratories worldwide.
Download or read book Positrons in Solids written by P. Hautojärvi and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 266 pages. Available in PDF, EPUB and Kindle. Book excerpt: In condensed matter initially fast positrons annihilate after having reached equi librium with the surroundings. The interaction of positrons with matter is governed by the laws of ordinary quantum mechanics. Field theory and antiparticle properties enter only in the annihilation process leading to the emergence of energetic photons. The monitoring of annihilation radiation by nuclear spectroscopic methods provides valuable information on the electron-positron system which can directly be related to the electronic structure of the medium. Since the positron is a positive electron its behavior in matter is especially interesting to solid-state and atomic physi cists. The small mass quarantees that the positron is really a quantum mechanical particle and completely different from any other particles and atoms. Positron physics started about 25 years ago but discoveries of new features in its interac tion with matter have maintained continuous interest and increasing activity in the field. Nowadays it is becoming part of the "stock-in-trade" of experimental physics.
Download or read book Positron Annihilation ICPA 11 written by Y. C. Jean and published by . This book was released on 1997 with total page 876 pages. Available in PDF, EPUB and Kindle. Book excerpt: For one and a half decades, the application of positron annihilation to condensed-matter physics concentrated on the study of the Fermi surfaces of metals and alloys. As other, often more powerful, techniques for performing this type of study were developed, it appeared that condensed-matter positron physics was going to be relegated to being a niche interest. However, the situation changed dramatically when it was found that measurements of positron annihilation in metals were sensitive to the structures of well-known defects. This discovery, and subsequent research made it a major tool in materials science.
Download or read book Book of Abstracts from the International Workshop on Positron Studies of Defects 2024 PSD 24 written by Rafael Ferragut and published by Trans Tech Publications Ltd. This book was released on 2024-08-23 with total page 105 pages. Available in PDF, EPUB and Kindle. Book excerpt: Following the long tradition that started in 1987, the International Workshop on Positron Studies of Defects 2024 (PSD-24) will be held in Como, Italy, in the period from September the 1st to 6th, 2024. The aim of the workshop is to provide an opportunity for exchange of the latest results and scientific information concerning the positron interactions with solids and surfaces, the generation of slow positron beams and their applications.
Download or read book Bismuth written by Ying Zhou and published by BoD – Books on Demand. This book was released on 2018-06-20 with total page 231 pages. Available in PDF, EPUB and Kindle. Book excerpt: Bismuth (Bi) is a post-transition metal element with the atomic number of 83, which belongs to the pnictogen group elements in Period 6 in the elemental periodic table. As a heavy metal, the hazard of Bi is unusually low in contrast to its neighbors Pb and Sb. This property, along with other typical characteristics like strong diamagnetism and low thermal conductivity, makes Bi attractive in industrial applications. There are more than 100 commercial bismuth products, from pharmaceutical to industrial catalysts. Based on the wide applications of Bi materials, this book goes further and mainly focuses on the potential uses of Bi-based materials, which consist of nine chapters. In addition, a special chapter concerning the defect in bismuth is also presented.
Download or read book Technology of Gallium Nitride Crystal Growth written by Dirk Ehrentraut and published by Springer Science & Business Media. This book was released on 2010-06-14 with total page 337 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book discusses the important technological aspects of the growth of GaN single crystals by HVPE, MOCVD, ammonothermal and flux methods for the purpose of free-standing GaN wafer production.
