Download or read book Plasticity of Silicon Carbide Doped by Ion Implantation written by S. M. Fenwick and published by . This book was released on 1988 with total page 100 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Process Technology for Silicon Carbide Devices written by Carl-Mikael Zetterling and published by IET. This book was released on 2002 with total page 202 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book explains why SiC is so useful in electronics, gives clear guidance on the various processing steps (growth, doping, etching, contact formation, dielectrics etc) and describes how these are integrated in device manufacture.
Download or read book Ion implantation Doping of Silicon Carbide written by and published by . This book was released on 1997 with total page 7 pages. Available in PDF, EPUB and Kindle. Book excerpt: Because of their commercial availability in bulk single crystal form, the 6H- and 4H- polytypes of SiC are gaining importance for high-power, high-temperature, and high-frequency device applications. Selective area doping is a crucial processing step in integrated circuit manufacturing. In Si technology, selective area doping is accomplished by thermal diffusion or ion-implantation. Because of the low diffusion coefficients of most impurities in SiC, ion implantation is indispensable in SiC device manufacturing. In this paper the authors present their results on donor, acceptor, and compensation implants in 6H-SiC.
Download or read book Advancing Silicon Carbide Electronics Technology II written by Konstantinos Zekentes and published by Materials Research Forum LLC. This book was released on 2020-03-15 with total page 292 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book presents an in-depth review and analysis of Silicon Carbide device processing. The main topics are: (1) Silicon Carbide Discovery, Properties and Technology, (2) Processing and Application of Dielectrics in Silicon Carbide Devices, (3) Doping by Ion Implantation, (4) Plasma Etching and (5) Fabrication of Silicon Carbide Nanostructures and Related Devices. The book is also suited as supplementary textbook for graduate courses. Keywords: Silicon Carbide, SiC, Technology, Processing, Semiconductor Devices, Material Properties, Polytypism, Thermal Oxidation, Post Oxidation Annealing, Surface Passivation, Dielectric Deposition, Field Effect Mobility, Ion Implantation, Post Implantation Annealing, Channeling, Surface Roughness, Dry Etching, Plasma Etching, Ion Etching, Sputtering, Chemical Etching, Plasma Chemistry, Micromasking, Microtrenching, Nanocrystal, Nanowire, Nanotube, Nanopillar, Nanoelectromechanical Systems (NEMS).
Download or read book Structure and Composition of Silicon Carbide Films Formed by Ion Implantation Techniques written by Kerstin Volz and published by Cuvillier Verlag. This book was released on 2001 with total page 201 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Advances in Silicon Carbide Processing and Applications written by Stephen E. Saddow and published by Artech House. This book was released on 2004 with total page 236 pages. Available in PDF, EPUB and Kindle. Book excerpt: Learn the latest advances in SiC (Silicon Carbide) technology from the leading experts in the field with this new cutting-edge resource. The book is your single source for in-depth information on both SiC device fabrication and system-level applications. This comprehensive reference begins with an examination of how SiC is grown and how defects in SiC growth can affect working devices. Key issues in selective doping of SiC via ion implantation are covered with special focus on implant conditions and electrical activation of implants. SiC applications discussed include chemical sensors, motor-control components, high-temperature gas sensors, and high-temperature electronics. By cutting through the arcane data and jargon surrounding the hype on SiC, this book gives an honest assessment of today's SiC technology and shows you how SiC can be adopted in developing tomorrow's applications.
Download or read book Ion Implantation Phenomena in 4th silicon Carbide written by Gordon James Phelps and published by . This book was released on 2003 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Depth Profile Modelling of Ion Implanted Silicon Carbide in Post anneal Condition written by Niraja Anil Bhalchandra and published by . This book was released on 2017 with total page 68 pages. Available in PDF, EPUB and Kindle. Book excerpt: An empirical impurity profile model of nitrogen (N), boron (B), and aluminum (Al) ion-implantation in 4-H SiC in post-anneal condition has been developed for comparative study to understand the properties of dopant species in SiC material. Analytical modeling has been performed by using MATLAB software for evaluation of the implant dose, impurity profile, annealing effect and related impurity dopant species for fabrication of 4-H SiC MESFET and other devices. The range and straggle parameters are computed using the SRIM software and the high temperature diffusion of impurities has been determined to incorporate with impurity profile equation. The impurity ions diffusion and its effect on impurity profile after annealing has been determined considering the high temperature diffusion of impurity atoms and substitutional diffusion.
Download or read book Ion Implantation Synthesis of Silicon Carbide written by Yubao Wang and published by . This book was released on 1999 with total page 112 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Ion Implantation Technology for 6H and 4H Silicon Carbide written by Priya Ananthanarayanan and published by . This book was released on 1998 with total page 158 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Ion Implantation Phenomena in 4H silicon Carbide written by Gordon James Phelps and published by . This book was released on 2003 with total page 176 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Fundamentals of Silicon Carbide Technology written by Tsunenobu Kimoto and published by John Wiley & Sons. This book was released on 2014-09-23 with total page 565 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001. The SiC SBD market has grown significantly since that time, and SBDs are now used in a variety of power systems, particularly switch-mode power supplies and motor controls. SiC power MOSFETs entered commercial production in 2011, providing rugged, high-efficiency switches for high-frequency power systems. In this wide-ranging book, the authors draw on their considerable experience to present both an introduction to SiC materials, devices, and applications and an in-depth reference for scientists and engineers working in this fast-moving field. Fundamentals of Silicon Carbide Technology covers basic properties of SiC materials, processing technology, theory and analysis of practical devices, and an overview of the most important systems applications. Specifically included are: A complete discussion of SiC material properties, bulk crystal growth, epitaxial growth, device fabrication technology, and characterization techniques. Device physics and operating equations for Schottky diodes, pin diodes, JBS/MPS diodes, JFETs, MOSFETs, BJTs, IGBTs, and thyristors. A survey of power electronics applications, including switch-mode power supplies, motor drives, power converters for electric vehicles, and converters for renewable energy sources. Coverage of special applications, including microwave devices, high-temperature electronics, and rugged sensors. Fully illustrated throughout, the text is written by recognized experts with over 45 years of combined experience in SiC research and development. This book is intended for graduate students and researchers in crystal growth, material science, and semiconductor device technology. The book is also useful for design engineers, application engineers, and product managers in areas such as power supplies, converter and inverter design, electric vehicle technology, high-temperature electronics, sensors, and smart grid technology.
Download or read book Effect of Ion Implantation on the Oxidation Stability of Single Crystal Silicon Carbide written by Zunde Yang and published by . This book was released on 1995 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book An Investigation Into the Mechanical Effects of High Dose Ion Implantation Into Silicon Carbide written by Alex Cock and published by . This book was released on 1991 with total page 96 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Physics and Technology of Silicon Carbide Devices written by Yasuto Hijikata and published by BoD – Books on Demand. This book was released on 2012-10-16 with total page 416 pages. Available in PDF, EPUB and Kindle. Book excerpt: Recently, some SiC power devices such as Schottky-barrier diodes (SBDs), metal-oxide-semiconductor field-effect-transistors (MOSFETs), junction FETs (JFETs), and their integrated modules have come onto the market. However, to stably supply them and reduce their cost, further improvements for material characterizations and those for device processing are still necessary. This book abundantly describes recent technologies on manufacturing, processing, characterization, modeling, and so on for SiC devices. In particular, for explanation of technologies, I was always careful to argue physics underlying the technologies as much as possible. If this book could be a little helpful to progress of SiC devices, it will be my unexpected happiness.
Download or read book Silicon Carbide Device Fabrication Based on Amorphization Using Ion Implantation written by Dev Alok and published by . This book was released on 1996 with total page 462 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Investigation of Near Surface Chemical Physical and Mechanical Properties of Silicon Carbide Crystals and Fibers Modified by Ion Implantation written by J. A. Spitznagel and published by . This book was released on 1988 with total page 108 pages. Available in PDF, EPUB and Kindle. Book excerpt: Modification of chemical, physical and mechanical properties of ceramic/semiconductor surfaces by ion implantation provides an opportunity to define and obtain desirable properties for a variety of applications. These include: interfaces in composite materials, electrical properties of devices and contacts, and specialized surfaces for optical waveguides, wear and corrosion resistance, etc. In this study, single crystals (6H), and whiskers of high purity silicon carbide were implanted with a variety of n- and p-type dopants (B, N, A1, P), an isovalent dopant (Ti), inert species (Ne) and hydrogen. Isochronal anneals at temperatures up to 1173 K permitted systematic evaluation of thermal effects in the implanted region. Implants fluences were normalized to permit comparisons on the basis of equal concentrations of displaced Si atoms for each ion. microstructural, mechanical and chemical effects were studied by a series of RBS/channeling, TEM, SEM, microhardness, microtensile, AES, SIMS, and wetting (sputtered and molten metal) measurements. Recovery of crystalline structure during annealing is shown to be relatively independent of the implant species but depends upon the number of atomic displacements in the Si sublattice. Near-surface mechanical and chemical effects, however, are very dependent on the chemical/electrical nature of the implanted ions. Applications to ceramic/metal interfaces in metal matrix composites are discussed.
