Download or read book GaN and Related Materials written by Stephen J. Pearton and published by CRC Press. This book was released on 2021-10-08 with total page 556 pages. Available in PDF, EPUB and Kindle. Book excerpt: Presents views on current developments in heat and mass transfer research related to the modern development of heat exchangers. Devotes special attention to the different modes of heat and mass transfer mechanisms in relation to the new development of heat exchangers design. Dedicates particular attention to the future needs and demands for further development in heat and mass transfer. GaN and related materials are attracting tremendous interest for their applications to high-density optical data storage, blue/green diode lasers and LEDs, high-temperature electronics for high-power microwave applications, electronics for aerospace and automobiles, and stable passivation films for semiconductors. In addition, there is great scientific interest in the nitrides, because they appear to form the first semiconductor system in which extended defects do not severely affect the optical properties of devices. This series provides a forum for the latest research in this rapidly-changing field, offering readers a basic understanding of new developments in recent research. Series volumes feature a balance between original theoretical and experimental research in basic physics, device physics, novel materials and quantum structures, processing, and systems.
Download or read book Gallium Nitride Processing for Electronics Sensors and Spintronics written by Stephen J. Pearton and published by Springer Science & Business Media. This book was released on 2006-02-24 with total page 402 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor spintronics is expected to lead to a new generation of transistors, lasers and integrated magnetic sensors that can be used to create ultra-low power, high speed memory, logic and photonic devices. Useful spintronic devices will need materials with practical magnetic ordering temperatures and current research points to gallium and aluminium nitride magnetic superconductors as having great potential. This book details current research into the properties of III-nitride semiconductors and their usefulness in novel devices such as spin-polarized light emitters, spin field effect transistors, integrated sensors and high temperature electronics. Written by three leading researchers in nitride semiconductors, the book provides an excellent introduction to gallium nitride technology and will be of interest to all reseachers and industrial practitioners wishing to keep up to date with developments that may lead to the next generation of transistors, lasers and integrated magnetic sensors.
Download or read book GaN and Related Materials II written by Stephen J. Pearton and published by CRC Press. This book was released on 2000-10-31 with total page 718 pages. Available in PDF, EPUB and Kindle. Book excerpt: The first GaN and Related Materials covered topics such as a historical survey of past research, optical electrical and microstructural characterization, theory of defects, bulk crystal growth, and performance of electronic and photonic devices. This new volume updates old research where warranted and explores new areas such as UV detectors, microw
Download or read book Handbook of Advanced Plasma Processing Techniques written by R.J. Shul and published by Springer Science & Business Media. This book was released on 2011-06-28 with total page 664 pages. Available in PDF, EPUB and Kindle. Book excerpt: Pattern transfer by dry etching and plasma-enhanced chemical vapor de position are two of the cornerstone techniques for modern integrated cir cuit fabrication. The success of these methods has also sparked interest in their application to other techniques, such as surface-micromachined sen sors, read/write heads for data storage and magnetic random access memory (MRAM). The extremely complex chemistry and physics of plasmas and their interactions with the exposed surfaces of semiconductors and other materi als is often overlooked at the manufacturing stage. In this case, the process is optimized by an informed "trial-and-error" approach which relies heavily on design-of-experiment techniques and the intuition of the process engineer. The need for regular cleaning of plasma reactors to remove built-up reaction or precursor gas products adds an extra degree of complexity because the interaction of the reactive species in the plasma with the reactor walls can also have a strong effect on the number of these species available for etching or deposition. Since the microelectronics industry depends on having high process yields at each step of the fabrication process, it is imperative that a full understanding of plasma etching and deposition techniques be achieved.
Download or read book Proceedings of the Symposium on High Speed III V Electronics for Wireless Applications and the Twenty Fifth State of the Art Program on Compound Semiconductors SOTAPOCS XXV written by F. Ren and published by The Electrochemical Society. This book was released on 1996 with total page 364 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Vertical GaN and SiC Power Devices written by Kazuhiro Mochizuki and published by Artech House. This book was released on 2018-04-30 with total page 284 pages. Available in PDF, EPUB and Kindle. Book excerpt: This unique new resource provides a comparative introduction to vertical Gallium Nitride (GaN) and Silicon Carbide (SiC) power devices using real commercial device data, computer, and physical models. This book uses commercial examples from recent years and presents the design features of various GaN and SiC power components and devices. Vertical verses lateral power semiconductor devices are explored, including those based on wide bandgap materials. The abstract concepts of solid state physics as they relate to solid state devices are explained with particular emphasis on power solid state devices. Details about the effects of photon recycling are presented, including an explanation of the phenomenon of the family tree of photon-recycling. This book offers in-depth coverage of bulk crystal growth of GaN, including hydride vapor-phase epitaxial (HVPE) growth, high-pressure nitrogen solution growth, sodium-flux growth, ammonothermal growth, and sublimation growth of SiC. The fabrication process, including ion implantation, diffusion, oxidation, metallization, and passivation is explained. The book provides details about metal-semiconductor contact, unipolar power diodes, and metal-insulator-semiconductor (MIS) capacitors. Bipolar power diodes, power switching devices, and edge terminations are also covered in this resource.
Download or read book JJAP written by and published by . This book was released on 2006 with total page 634 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book GaN and ZnO based Materials and Devices written by Stephen Pearton and published by Springer Science & Business Media. This book was released on 2012-01-14 with total page 497 pages. Available in PDF, EPUB and Kindle. Book excerpt: The AlInGaN and ZnO materials systems have proven to be one of the scientifically and technologically important areas of development over the past 15 years, with applications in UV/visible optoelectronics and in high-power/high-frequency microwave devices. The pace of advances in these areas has been remarkable and the wide band gap community relies on books like the one we are proposing to provide a review and summary of recent progress.
Download or read book III V Nitride Semiconductors written by Edward T. Yu and published by CRC Press. This book was released on 2022-10-30 with total page 715 pages. Available in PDF, EPUB and Kindle. Book excerpt: The concepts in this book will provide a comprehensive overview of the current state for a broad range of nitride semiconductor devices, as well as a detailed introduction to selected materials and processing issues of general relevance for these applications. This compilation is very timely given the level of interest and the current stage of research in nitride semiconductor materials and device applications. This volume consists of chapters written by a number of leading researchers in nitride materials and device technology addressing Ohmic and Schottky contacts, AIGalnN multiple quantum well laser diodes, nitride vertical cavity emitting lasers, and ultraviolet photodetectors. This unique volume provides a comprehensive review and introduction to application and devices based on GaN and related compounds for newcomers to the field and stimulus to further advances for experienced researchers.
Download or read book Handbook of GaN Semiconductor Materials and Devices written by Wengang (Wayne) Bi and published by CRC Press. This book was released on 2017-10-20 with total page 709 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book addresses material growth, device fabrication, device application, and commercialization of energy-efficient white light-emitting diodes (LEDs), laser diodes, and power electronics devices. It begins with an overview on basics of semiconductor materials, physics, growth and characterization techniques, followed by detailed discussion of advantages, drawbacks, design issues, processing, applications, and key challenges for state of the art GaN-based devices. It includes state of the art material synthesis techniques with an overview on growth technologies for emerging bulk or free standing GaN and AlN substrates and their applications in electronics, detection, sensing, optoelectronics and photonics. Wengang (Wayne) Bi is Distinguished Chair Professor and Associate Dean in the College of Information and Electrical Engineering at Hebei University of Technology in Tianjin, China. Hao-chung (Henry) Kuo is Distinguished Professor and Associate Director of the Photonics Center at National Chiao-Tung University, Hsin-Tsu, Taiwan, China. Pei-Cheng Ku is an associate professor in the Department of Electrical Engineering & Computer Science at the University of Michigan, Ann Arbor, USA. Bo Shen is the Cheung Kong Professor at Peking University in China.
Download or read book Advances in Chemical Mechanical Planarization CMP written by Babu Suryadevara and published by Woodhead Publishing. This book was released on 2021-09-10 with total page 650 pages. Available in PDF, EPUB and Kindle. Book excerpt: Advances in Chemical Mechanical Planarization (CMP), Second Edition provides the latest information on a mainstream process that is critical for high-volume, high-yield semiconductor manufacturing, and even more so as device dimensions continue to shrink. The second edition includes the recent advances of CMP and its emerging materials, methods, and applications, including coverage of post-CMP cleaning challenges and tribology of CMP. This important book offers a systematic review of fundamentals and advances in the area. Part one covers CMP of dielectric and metal films, with chapters focusing on the use of current and emerging techniques and processes and on CMP of various materials, including ultra low-k materials and high-mobility channel materials, and ending with a chapter reviewing the environmental impacts of CMP processes. New content addressed includes CMP challenges with tungsten, cobalt, and ruthenium as interconnect and barrier films, consumables for ultralow topography and CMP for memory devices. Part two addresses consumables and process control for improved CMP and includes chapters on CMP pads, diamond disc pad conditioning, the use of FTIR spectroscopy for characterization of surface processes and approaches for defection characterization, mitigation, and reduction. Advances in Chemical Mechanical Planarization (CMP), Second Edition is an invaluable resource and key reference for materials scientists and engineers in academia and R&D. - Reviews the most relevant techniques and processes for CMP of dielectric and metal films - Includes chapters devoted to CMP for current and emerging materials - Addresses consumables and process control for improved CMP, including post-CMP
Download or read book Encyclopedia of Optical and Photonic Engineering Print Five Volume Set written by Craig Hoffman and published by CRC Press. This book was released on 2015-09-22 with total page 3726 pages. Available in PDF, EPUB and Kindle. Book excerpt: The first edition of the Encyclopedia of Optical and Photonic Engineering provided a valuable reference concerning devices or systems that generate, transmit, measure, or detect light, and to a lesser degree, the basic interaction of light and matter. This Second Edition not only reflects the changes in optical and photonic engineering that have occurred since the first edition was published, but also: Boasts a wealth of new material, expanding the encyclopedia’s length by 25 percent Contains extensive updates, with significant revisions made throughout the text Features contributions from engineers and scientists leading the fields of optics and photonics today With the addition of a second editor, the Encyclopedia of Optical and Photonic Engineering, Second Edition offers a balanced and up-to-date look at the fundamentals of a diverse portfolio of technologies and discoveries in areas ranging from x-ray optics to photon entanglement and beyond. This edition’s release corresponds nicely with the United Nations General Assembly’s declaration of 2015 as the International Year of Light, working in tandem to raise awareness about light’s important role in the modern world. Also Available Online This Taylor & Francis encyclopedia is also available through online subscription, offering a variety of extra benefits for researchers, students, and librarians, including: Citation tracking and alerts Active reference linking Saved searches and marked lists HTML and PDF format options Contact Taylor and Francis for more information or to inquire about subscription options and print/online combination packages. US: (Tel) 1.888.318.2367; (E-mail) [email protected] International: (Tel) +44 (0) 20 7017 6062; (E-mail) [email protected]
Download or read book Encyclopedia of Plasma Technology Two Volume Set written by J. Leon Shohet and published by CRC Press. This book was released on 2016-12-12 with total page 1654 pages. Available in PDF, EPUB and Kindle. Book excerpt: Technical plasmas have a wide range of industrial applications. The Encyclopedia of Plasma Technology covers all aspects of plasma technology from the fundamentals to a range of applications across a large number of industries and disciplines. Topics covered include nanotechnology, solar cell technology, biomedical and clinical applications, electronic materials, sustainability, and clean technologies. The book bridges materials science, industrial chemistry, physics, and engineering, making it a must have for researchers in industry and academia, as well as those working on application-oriented plasma technologies. Also Available Online This Taylor & Francis encyclopedia is also available through online subscription, offering a variety of extra benefits for researchers, students, and librarians, including: Citation tracking and alerts Active reference linking Saved searches and marked lists HTML and PDF format options Contact Taylor and Francis for more information or to inquire about subscription options and print/online combination packages. US: (Tel) 1.888.318.2367; (E-mail) [email protected] International: (Tel) +44 (0) 20 7017 6062; (E-mail) [email protected]
Download or read book Processing of Wide Band Gap Semiconductors written by S. J. Pearton and published by Cambridge University Press. This book was released on 2013-01-15 with total page 593 pages. Available in PDF, EPUB and Kindle. Book excerpt: Wide bandgap semiconductors, made from such materials as GaN, SiC, diamond, and ZnSe, are undergoing a strong resurgence in recent years, principally because of their direct bandgaps, which give them a huge advantage over the indirect gap Sic As an example, more than 10 million blue LEDs using this technology are sold each month, and new, high brightness (15 lumens per watt), long-life white LEDs are under development with the potential to replace incandescent bulbs in many situations. This book provides readers with a broad overview of this rapidly expanding technology, bringing them up to speed on new discoveries and commercial applications. It provides specific technical applications of key processes such as laser diodes, LEDs, and very high temperature electronic controls on engines, focusing on doping, etching, oxidation passivation, growth techniques and more.
Download or read book Handbook for III V High Electron Mobility Transistor Technologies written by D. Nirmal and published by CRC Press. This book was released on 2019-05-14 with total page 434 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book focusses on III-V high electron mobility transistors (HEMTs) including basic physics, material used, fabrications details, modeling, simulation, and other important aspects. It initiates by describing principle of operation, material systems and material technologies followed by description of the structure, I-V characteristics, modeling of DC and RF parameters of AlGaN/GaN HEMTs. The book also provides information about source/drain engineering, gate engineering and channel engineering techniques used to improve the DC-RF and breakdown performance of HEMTs. Finally, the book also highlights the importance of metal oxide semiconductor high electron mobility transistors (MOS-HEMT). Key Features Combines III-As/P/N HEMTs with reliability and current status in single volume Includes AC/DC modelling and (sub)millimeter wave devices with reliability analysis Covers all theoretical and experimental aspects of HEMTs Discusses AlGaN/GaN transistors Presents DC, RF and breakdown characteristics of HEMTs on various material systems using graphs and plots
Download or read book Compound Semiconductors Strained Layers and Devices written by Suresh Jain and published by Springer Science & Business Media. This book was released on 2013-11-27 with total page 345 pages. Available in PDF, EPUB and Kindle. Book excerpt: In recent years, extensive work has been done on strain, dislocations and mechanical properties of strained layers. Although it is not possible to describe all this work in a monograph of this size, Compound Semiconductors Strained Layers and Devices provides an overview with sufficient detail to cover all the essential aspects of recent developments in the field. The book concentrates on compound semiconductors with emphasis on wideband gap II-VI and III-Nitride semiconductors. GeSi strained layers are discussed for comparison to clarify the underlying physics. The effects of strain on band structure, transport, and optical properties of both the zinc blende and the wurtzite compound semiconductors are discussed, as are Piezoelectric Effects and Quantum Confined Stark Effects. Magnetic polarons in diluted II-VI magnetic polarons are also covered. Among the applications, blue and green LEDs and LDs and mid-IR LDs are included. A whole chapter is devoted to these devices. Another chapter examines transistors based on conventional III-V, II-VI and III-nitride semiconductors. The subject matter is treated at a level appropriate for students and senior researchers interested in material science, and in designing and modeling semiconductor devices. It will also be useful to engineers and material scientists concerned with the effects of strain on the mechanical properties of crystalline layers of any material.
Download or read book New Developments and Application in Chemical Reaction Engineering written by Hyun-Ku Rhee and published by Elsevier. This book was released on 2006-05-10 with total page 951 pages. Available in PDF, EPUB and Kindle. Book excerpt: This Proceedings of APCRE'05 contains the articles that were presented at the 4th Asia-Pacific Chemical Reaction Engineering Symposium (APCRE'05), held at Gyeongju, Korea between June 12 and June 15, 2005, with a theme of "New Opportunities of Chemical Reaction Engineering in Asia-Pacific Region". Following the tradition of APCRE Symposia and ISCRE, the scientific program encompassed a wide spectrum of topics, including not only the traditional areas but also the emerging fields of chemical reaction engineering into which the chemical reaction engineers have successfully spearheaded and made significant contributions in recent years. In addition to the 190 papers being accepted, six plenary lectures and 11 invited lectures are placed in two separate chapters in the front.* Provides an overview of new developments and application in chemical reaction engineering* Topics include traditional and emerging fields * Papers reviewed by experts in the field
