Download or read book Plasma parameter Dependence of Thin oxide Charging Damage to Microelectronic Test Structures in an Electron cyclotron resonance Plasma written by James Benedict Friedmann and published by . This book was released on 1995 with total page 692 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Plasma Charging Damage written by Kin P. Cheung and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 354 pages. Available in PDF, EPUB and Kindle. Book excerpt: In the 50 years since the invention of transistor, silicon integrated circuit (IC) technology has made astonishing advances. A key factor that makes these advances possible is the ability to have precise control on material properties and physical dimensions. The introduction of plasma processing in pattern transfer and in thin film deposition is a critical enabling advance among other things. In state of the art silicon Ie manufacturing process, plasma is used in more than 20 different critical steps. Plasma is sometimes called the fourth state of matter (other than gas, liquid and solid). It is a mixture of ions (positive and negative), electrons and neutrals in a quasi-neutral gaseous steady state very far from equilibrium, sustained by an energy source that balances the loss of charged particles. It is a very harsh environment for the delicate ICs. Highly energetic particles such as ions, electrons and photons bombard the surface of the wafer continuously. These bombardments can cause all kinds of damage to the silicon devices that make up the integrated circuits.
Download or read book Study of SiO2 to Si Etching Selectivity in High Density Low Pressure Fluorocarbon Plasmas written by Karen Hildegard Ralston Kirmse and published by . This book was released on 1996 with total page 298 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Relationship Between the Charging Damage of Test Structures and the Deposited Charge on Unpatterned Wafers Exposed to an Electron Cyclotron Resonance Plasma written by Cristian cismaru and published by . This book was released on 1997 with total page 34 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Digest of Technical Papers written by and published by . This book was released on 2003 with total page 1020 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Thin Oxide Damage by Plasma Processing written by Hyungcheol Shin and published by . This book was released on 1993 with total page 292 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Dissertation Abstracts International written by and published by . This book was released on 1996 with total page 780 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Plasma Process induced Charging Damage on Thin Gate Oxides written by Donggun Park and published by . This book was released on 1998 with total page 240 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Consequences of Mode Structure on Plasma Parameters in Electron Cyclotron Resonance Sources Used for Materials Processing written by Ronald Leonel Kinder and published by . This book was released on 1998 with total page 186 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Investigation of Plasma Implantation and Gate Oxide Charging During Plasma Processing written by Barry Paul Linder and published by . This book was released on 1999 with total page 458 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Oxidation of Silicon in an Electron Cyclotron Resonance Plasma written by Daniel Arthur Carl and published by . This book was released on 1991 with total page 376 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Microelectronic Processes Sensors and Controls written by James Bondur and published by . This book was released on 1994 with total page 480 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Oxide Film Formation from Electron Cyclotron Resonance ECR Plasmas written by and published by . This book was released on 1997 with total page 16 pages. Available in PDF, EPUB and Kindle. Book excerpt: The formation of SiO(subscript x) films and fluorine-doped SiO(subscript x) films using electron cyclotron resonance (ECR) plasma deposition is described. Parametric studies of the film composition and hydrogen content as a function of feed gas composition and RF biasing are presented. By replacing SiH4 with SiF4 in the gas feed, samples with F content from 2 at.% F to 12 at.% F are deposited, and the dielectric constant of the deposited layers decrease linearly with increasing fluorine concentration. The stability of these low dielectric constant SiO(subscript x)F{sub y} layers is examined under hydrating conditions, and conditions typically found for interlayer dielectric processing in microelectronics. The hydrogen content of the SiO2 and F-doped SiO2 is characterized as a function of deposition conditions, and a model is given to describe the thermal release of H from SiO2.
Download or read book In Situ Investigation of Temperature and Bias Dependent Effects on the Oxide Growth of Si and Ge in an ECR Plasma written by and published by . This book was released on 1993 with total page 21 pages. Available in PDF, EPUB and Kindle. Book excerpt: The electron cyclotron resonance, ECR, plasma oxidation of Si and Ge was investigated using in-situ spectroscopic ellipsometry at substrate temperatures of 80 to 400 deg C and at bias voltages of -30 to +60 V.A study of the oxide growth kinetics by ECR plasma oxidation results in three distinct regions of growth with the first two being linear and the last parabolic. At the earliest linear stage the rate of oxide growth is the fastest, and corresponds to around 3 nm film thickness which is not dependent on bias. Following this, the second linear region displays an oxide growth rate proportional to the bias with typical growth rates, of 0.10, 0.32 and 0.60 nm/min for 0, +30 and +60V, respectively, at 300 deg C. The third region displays parabolic kinetics and corresponds to the Cabrera-Mott, C-M, theory for the oxidation by charged species in the limit of a low electric field. Activation energies of 0.19 and 0. 28 eV are obtained using the C-M model for the ECR plasma oxidation of Si and Ge, respectively ... Oxide growth, Plasma.
Download or read book Catalog of National Bureau of Standards Publications 1966 1976 written by United States. National Bureau of Standards. Technical Information and Publications Division and published by . This book was released on 1978 with total page 854 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Parameter Measurements of a Germane Electron Cyclotron Resonance Plasma written by Matthew Jason DeFreese and published by . This book was released on 2000 with total page 122 pages. Available in PDF, EPUB and Kindle. Book excerpt: This thesis deals with research on optical and electrical characterizations of ECR (Electron Cyclotron Resonance) plasma processes used to deposit films of Germanium and its alloys. A semi-quantitative technique, optical emission spectroscopy (OES) is used to identify a characteristic peak (GeH) of germane plasmas. This is the first time ever that this peak has been seen in optical spectroscopy of germane plasmas. This peak is demonstrated to be correlated with film growth, and can be used to control the plasma process. The effects of changing deposition parameters, such as pressure, hydrogen or helium dilution ratios, and microwave power on film deposition rates and on electron and ion temperatures and electron densities in the plasma have been studied. A novel Langmuir probe technique, using a heated probe, was developed to measure these effects. The data obtained from the Langmuir probe have been correlated with the data obtained from OES measurements.
Download or read book Catalog of National Bureau of Standards Publications 1966 1976 written by United States. National Bureau of Standards and published by . This book was released on 1978 with total page 844 pages. Available in PDF, EPUB and Kindle. Book excerpt:
