Download or read book Plasma Etching of the Group III Nitrides written by and published by . This book was released on 1996 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book High Density Plasma Etching of Group III Nitride Films for Device Application written by and published by . This book was released on 2001 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: As III-V nitride device structures become more complicated and design rules shrink, well-controlled etch processes are necessary. Due to limited wet chemical etch results for the group-III nitrides, a significant amount of effort has been devoted to the development of dry etch processing. Dry etch development was initially focused on mesa structures where high etch rates, anisotropic profiles, smooth sidewalls, and equi-rate etching of dissimilar materials were required. For example, commercially available LEDs and laser facets for GaN-based laser diodes have been patterned using reactive ion etching (RIE). With the recent interest in high power, high temperature electronic devices, etch characteristics may also require smooth surface morphology, low plasma-induced damage, and selective etching of one layer over another. The principal criteria for any plasma etch process is its utility in the fabrication of a device. In this study, we will report plasma etch results for the group-III nitrides and their application to device structures.
Download or read book Proceedings of the First Symposium on III V Nitride Materials and Processes written by T. D. Moustakas and published by The Electrochemical Society. This book was released on 1996 with total page 250 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book III V Nitrides written by Fernando A. Ponce and published by . This book was released on 1997 with total page 1290 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book High density Plasma Etching of III nitrides written by Rajwinder Singh and published by . This book was released on 2003 with total page 444 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Proceedings of the Second Symposium on III V Nitride Materials and Processes written by C. R. Abernathy and published by The Electrochemical Society. This book was released on 1998 with total page 310 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Handbook for III V High Electron Mobility Transistor Technologies written by D. Nirmal and published by CRC Press. This book was released on 2019-05-14 with total page 430 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book focusses on III-V high electron mobility transistors (HEMTs) including basic physics, material used, fabrications details, modeling, simulation, and other important aspects. It initiates by describing principle of operation, material systems and material technologies followed by description of the structure, I-V characteristics, modeling of DC and RF parameters of AlGaN/GaN HEMTs. The book also provides information about source/drain engineering, gate engineering and channel engineering techniques used to improve the DC-RF and breakdown performance of HEMTs. Finally, the book also highlights the importance of metal oxide semiconductor high electron mobility transistors (MOS-HEMT). Key Features Combines III-As/P/N HEMTs with reliability and current status in single volume Includes AC/DC modelling and (sub)millimeter wave devices with reliability analysis Covers all theoretical and experimental aspects of HEMTs Discusses AlGaN/GaN transistors Presents DC, RF and breakdown characteristics of HEMTs on various material systems using graphs and plots
Download or read book III nitride written by Zhe Chuan Feng and published by World Scientific. This book was released on 2006 with total page 442 pages. Available in PDF, EPUB and Kindle. Book excerpt: III-Nitride semiconductor materials - (Al, In, Ga)N are excellent wide band gap semiconductors. This book presents the various developments and achievements in the field. It is useful for engineers, scientists and students.
Download or read book ECR Etching of Group III Nitride Binary and Ternary Films written by and published by . This book was released on 1995 with total page 14 pages. Available in PDF, EPUB and Kindle. Book excerpt: Due to their wide band gaps and high dielectric constants, the group III-nitrides have made significant impact on the compound semiconductor community as blue and ultraviolet light emitting diodes (LEDs) and for their potential use in laser structures and high temperature electronics. Processing of these materials, in particular wet and dry etching, has proven to be extremely difficult due to their inert chemical nature. We report electron cyclotron resonance (ECR) etch rates for GaN, InN, AlN, In{sub (x)}Ga{sub (1-x)}Ni and In{sub (x)}Al{sub (1-x)}N as a function of temperature, rf-power, pressure, and microwave power. Etch conditions are characterized for rate, profile, and sidewall and surface morphology. Atomic force microscopy (AFM) is used to quantify RMS roughness of the etched surfaces. We observe consistent trends for the InAlN films where the etch rates increase with increasing concentration of In. The trends are far less consistent for the InGaN with a general decrease in etch rate as the In concentration is increased.
Download or read book III Nitrides Light Emitting Diodes Technology and Applications written by Jinmin Li and published by Springer Nature. This book was released on 2020-08-31 with total page 295 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book provides an overview of III-nitride-material-based light-emitting diode (LED) technology, from the basic material physics to the latest advances in the field, such as homoepitaxy and heteroepitaxy of the materials on different substrates. It also includes the latest advances in the field, such as approaches to improve quantum efficiency and reliability as well as novel structured LEDs. It explores the concept of material growth, chip structure, packaging, reliability and application of LEDs. With spectra coverage from ultraviolet (UV) to entire visible light wavelength, the III-nitride-material-based LEDs have a broad application potential, and are not just limited to illumination. These novel applications, such as health & medical, visible light communications, fishery and horticulture, are also discussed in the book.
Download or read book GaN and Related Materials written by Stephen J. Pearton and published by CRC Press. This book was released on 1997-10-29 with total page 556 pages. Available in PDF, EPUB and Kindle. Book excerpt: Presents views on current developments in heat and mass transfer research related to the modern development of heat exchangers. Devotes special attention to the different modes of heat and mass transfer mechanisms in relation to the new development of heat exchangers design. Dedicates particular attention to the future needs and demands for further development in heat and mass transfer. GaN and related materials are attracting tremendous interest for their applications to high-density optical data storage, blue/green diode lasers and LEDs, high-temperature electronics for high-power microwave applications, electronics for aerospace and automobiles, and stable passivation films for semiconductors. In addition, there is great scientific interest in the nitrides, because they appear to form the first semiconductor system in which extended defects do not severely affect the optical properties of devices. This series provides a forum for the latest research in this rapidly-changing field, offering readers a basic understanding of new developments in recent research. Series volumes feature a balance between original theoretical and experimental research in basic physics, device physics, novel materials and quantum structures, processing, and systems.
Download or read book Gallium Nitride Processing for Electronics Sensors and Spintronics written by Stephen J. Pearton and published by Springer Science & Business Media. This book was released on 2006-02-24 with total page 402 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor spintronics is expected to lead to a new generation of transistors, lasers and integrated magnetic sensors that can be used to create ultra-low power, high speed memory, logic and photonic devices. Useful spintronic devices will need materials with practical magnetic ordering temperatures and current research points to gallium and aluminium nitride magnetic superconductors as having great potential. This book details current research into the properties of III-nitride semiconductors and their usefulness in novel devices such as spin-polarized light emitters, spin field effect transistors, integrated sensors and high temperature electronics. Written by three leading researchers in nitride semiconductors, the book provides an excellent introduction to gallium nitride technology and will be of interest to all reseachers and industrial practitioners wishing to keep up to date with developments that may lead to the next generation of transistors, lasers and integrated magnetic sensors.
Download or read book State of the Art Program on Compound Semiconductors SOTAPOCs XXX written by C. R. Abernathy and published by The Electrochemical Society. This book was released on 1999 with total page 278 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Handbook of Advanced Plasma Processing Techniques written by R.J. Shul and published by Springer Science & Business Media. This book was released on 2011-06-28 with total page 664 pages. Available in PDF, EPUB and Kindle. Book excerpt: Pattern transfer by dry etching and plasma-enhanced chemical vapor de position are two of the cornerstone techniques for modern integrated cir cuit fabrication. The success of these methods has also sparked interest in their application to other techniques, such as surface-micromachined sen sors, read/write heads for data storage and magnetic random access memory (MRAM). The extremely complex chemistry and physics of plasmas and their interactions with the exposed surfaces of semiconductors and other materi als is often overlooked at the manufacturing stage. In this case, the process is optimized by an informed "trial-and-error" approach which relies heavily on design-of-experiment techniques and the intuition of the process engineer. The need for regular cleaning of plasma reactors to remove built-up reaction or precursor gas products adds an extra degree of complexity because the interaction of the reactive species in the plasma with the reactor walls can also have a strong effect on the number of these species available for etching or deposition. Since the microelectronics industry depends on having high process yields at each step of the fabrication process, it is imperative that a full understanding of plasma etching and deposition techniques be achieved.
Download or read book izn i tvor estvo V G Belinskogo written by and published by . This book was released on 1959 with total page 88 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book III Nitride Semiconductors written by Hongxing Jiang and published by CRC Press. This book was released on 2002-06-28 with total page 430 pages. Available in PDF, EPUB and Kindle. Book excerpt: The first part of a comprehensive overview of fundamental optical properties of III-nitride semiconductors. All optoelectronic applications based on III-nitrides are due to their unique optical properties and characterizations of III-nitrides. Much information, which is critical to the design and improvement of optoelectronic devices based on III-nitrides has been obtained in the last several years. This is the first of a two part Volume in the series Optoelectronic Properties of Semiconductors and Superlattices. Part I begins with time-resolved studies of semiconductors and moves on to the emphasis on time-resolved photoluminescence of nitride materials and device technology and focuses on Raman studies and properties of III Nitrides. This unique volume provides a comprehensive review and introduction of the defects and structural properties of GaN and related compounds. This would be excellent for newcomers to the field and is a stimulus to further advances for experienced researchers.III-Nitride Semiconductors: Optical Properties Part I combines contributions from active experts in the field with diverse backgrounds. This book provides a very important step in advancing the state of research and device development in the field of III-nitride materials.
Download or read book Selective Etching of Wide Bandgap Nitrides written by and published by . This book was released on 1997 with total page 9 pages. Available in PDF, EPUB and Kindle. Book excerpt: HIGH-DENSITY PLASMA ETCHING HAS BEEN AN EFFECTIVE PATTERNING TECHNIQUE FOR THE GROUP-III NITRIDES DUE TO ION FLUXES WHICH ARE 2 TO 4 ORDERS OF MAGNITUDE HIGHER THAN MORE CONVENTIONAL REACTIVE ION ETCH (RIE) SYSTEMS. GAN ETCH RATES EXCEEDING 0.68 MICROMETER/MIN HAVE BEEN REPORTED IN C12/H2/AR INDUCTIVELY COUPLED PLASMAS (ICP) AT -280 V DC-BIAS. UNDER THESE CONDITIONS, THE ETCH MECHANISM IS DOMINATED BY ION BOMBARDMENT ENERGIES WHICH CAN INDUCE DAMAGE AND MINIMIZE ETCH SELECTIVITY. HIGH SELECTIVITY ETCH PROCESSES ARE OFTEN NECESSARY FOR HETEROSTRUCTURE DEVICES WHICH ARE BECOMING MORE PROMINENT AS GROWTH TECHNIQUES IMPROVE. IN THIS STUDY, WE WILL REPORT HIGH-DENSITY ICP ETCH RATES AND SELECTIVITIES FOR GAN, ALN, AND INN AS A FUNCTION OF CATHODE POWER, ICP-SOURCE POWER, AND CHAMBER PRESSURE. GAN:ALN SELECTIVITIES
